Abstract: An assembly for a charged particle detection device of high detection efficiency is described. The assembly comprising a metal grid for applying attractive potential to lure charged particles; a scintillator disc to absorb the energy from impinging charged particle and reemit the energy in form of light or photons; a light guide to transmit light or photons; and a photomultiplier tube (PMT) cohere with the end of light guide to receive light or photons from light guide and convert it into current signal. A light guide with a bullet-head-shaped front portion ensures total reflection of light propagating within the light guide. A frustum-cone-shaped scintillator disc releases the light that originally trapped in the scintillator disc due to the shape of scintillator.

Abstract: A method for heating a substrate in a vacuum environment and a system therefor is provided. The system includes a chamber capable of holding the substrate located in the vacuum environment and a light source capable of projecting a light beam only on a portion of the substrate. The method includes the following steps. First, the substrate is placed in the vacuumed chamber. Thereafter, the light beam emitted from the light source is projected on the portion of the substrate, such that the portion is significantly heated before whole the substrate is heated. When the light beam is a charged particle beam projected by a charged particle beam assembly and projected on defects located on the substrate, the defects are capable of being identified by an examination result provided by an examination assembly after termination of light beam projection.

Abstract: A method of classifying the defects on a wafer having some same chips and corresponding system is provided. After receiving images formed by scanning the wafer using a charged particle beam, these images are examined such that both defective images and defect-free images are found. Then, the defect-free images are translated into a simulated layout of the chip, or a database is used to provide the simulated layout of the chip. Finally, the defects on the defective images are classified by comparing the images with the simulated layout of the chip. The system has some modules separately corresponds to the steps of the method.

Abstract: The present invention provides two ways to form a special permeability discontinuity unit inside every sub-lens of a multi-axis magnetic lens, which either has a simpler configuration or has more flexibility in manufacturing such as material selection and mechanical structure. Accordingly several types of multi-axis magnetic lens are proposed for various applications. One type is for general application such as a multi-axis magnetic condenser lens or a multi-axis magnetic transfer lens, another type is a multi-axis magnetic non-immersion objective which can require a lower magnetomotive force, and one more type is a multi-axis magnetic immersion objective lens which can generate smaller aberrations. Due to using permeability-discontinuity units, every multi-axis magnetic lens in this invention can also be electrically excited to function as a multi-axis electromagnetic compound lens so as to further reduce aberrations thereof and/or realize electron beam retarding for low-voltage irradiation on specimen.

Abstract: The present invention generally relates to dynamic focus adjustment for an image system. With the assistance of a height detection sub-system, present invention provides an apparatus and methods for micro adjusting an image focusing according the specimen surface height variation by altering the field strength of an electrostatic lens between objective lens and sample stage/or a bias voltage applied to the sample surface. Merely by way of example, the invention has been applied to a scanning electron inspection system. But it would be recognized that the invention could apply to other system using charged particle beam as observation tool with a height detection apparatus.

Abstract: A method for forming a memory cell transistor is disclosed which includes providing a substrate, forming a trench structure in the substrate, depositing a conductive substance on the surface of the substrate to form a conductive member inside the trench structure, forming one or more dielectric layers on the surface of the substrate, forming one or more first conductive layers on top of the dielectric layers, and etching the first conductive layers and the dielectric layers to form a hole structure extending through the first conductive and the dielectric layers, reaching to the substrate surface. One or more second conductive layers may be formed on top of the first conductive layers, with the second conductive layer material filling the hole structure.

Abstract: A method of inspecting for plug-to-plug short (short circuit) defects on a sample is disclosed. A charged particle beam for imaging the sample is repeatedly line-scanned over the sample with a line-to-line advancement direction perpendicular to the line-scan direction. The method includes scanning the sample with a line-to-line advancement along a first and a second direction, to obtain a first and a second image of the sample, respectively. Then, the method includes identifying plug patterns, represented in the obtained images with abnormal grey levels, as abnormal plug patterns. Next, the method compares the locations of the abnormal plug patterns to determine the presence of plug-to-plug short defects on the sample.

Abstract: The present invention discloses a structure and a method for determining a defect in integrated circuit manufacturing process. Test keys are designed for the structure to be the interlaced arrays of grounded and floating conductive cylinders, and the microscopic image can be predicted to be an interlaced pattern of bright voltage contrast (BVC) and dark voltage contrast (DVC) signals for a charged particle beam imaging system. The system can detect the defects by comparing patterns of the detected VC signals and the predicted VC signals.

Abstract: This invention provides a test structure for inspecting word line array fabricated by SADP process, wherein the test structure comprises a contour circuit to cover one end of the WL array, and is alternatively float and ground to the word line array. The word line array then can be inspected by using E-beam inspection tool to identify open and short defects.

Abstract: A method and system for detecting or reviewing defective contacts on a semiconductor device are disclosed. In a first embodiment, the method and system comprise providing a positive charge sufficient enough to turn on a gate of an associated MOS device and scanning an area of interest within the MOS device with a primary electron beam of proper landing energy to generate image. The method and system include analyzing the signal of contacts and identify the open contacts. In a second embodiment, the method and system comprises pre-scanning or irradiating the wafer surface defect with an accessory beam, a plurality of times, to achieve positive charged/sufficient to turn on the gate on the associated MOS devices of the wafer; and scanning the at least a portion of the device circuits with a primary electron beam of proper landing energy to generate images wafer or area of interest. The method and system include analyzing the signal and/or image of contacts and identify the open contacts.

Abstract: A method for filtering noises in an image scanned by charged particles includes steps of grouping pixels with similar types in the image into a plurality of pixel groups; and removing noises for each pixel group in the image according to a corresponding noise model to obtain the scanned image with better quality and/or contrast. A system for filtering noises in an image scanned by charged particles is also disclosed.

Abstract: This invention provides a phase detector with more than two detector units on a printed circuit layer. A detector set includes a pair of detector units or one detector unit, and a detector row includes a plurality of detector sets in one line. The phase detector includes a plurality of detector rows and each row has a detector set in one period, wherein all detector units are interleaved to have the same interval between any two adjacent detector units, which is defined as a pitch and the pitch is equal to one period dividing the detector pair number, which is the half sum of the number of one detector set for all rows.

Abstract: A method of inspecting an EUV reticle is proposed, which uses an original design layout information to align the plurality of patterns on an image, which is got by scanning the surface of an EUV reticle, such that the defect can be identified and classified according to the aligned patterns. In the scanning process, a step of conditioning surface charge is followed by a step of inspecting surface of the EUV reticle wherein the step of conditioning surface can neutralize the surface charge and the step of inspecting can obtain an image of the EUV reticle. The method of inspecting an EUV reticle also tuning a retarding electrode to attract more secondary electrons such that the greylevels of different patterns may be shown and the defect can be identified and classified.

Abstract: An imaging method and apparatus for forming images of substantially the same area on a sample for defect inspection within the area are disclosed. The disclosed method includes line-scanning the charged particle beam over the area to form a plurality of n*Y scan lines by repeatedly forming a group of n scan lines for Y times. During the formation of each group of n scan lines, an optical beam is, from one line scan to another, selectively illuminated on the area prior to or simultaneously with scanning of the charged particle beam. In addition, during the formation of each group of n scan lines, a condition of illumination of the optical beam selectively changes from one line scan to another. The conditions at which individual n scan lines are formed are repeated for the formation of all Y groups of scan lines.

Abstract: A method for characterizing identified defects during charged particle beam inspection of a sample is disclosed. The method comprises obtaining a voltage contrast image of the sample by using a charged particle beam imaging apparatus at an inspection temperature; identifying, from the voltage contrast image, the presence of at least one defect on the sample; providing reference data of the sample, wherein the reference data represents at least one reference defect on the sample; comparing the location or geographical distribution of the identified defects and the reference defects on the sample to correlate the identified defects with the inspection temperature thereby characterizing the identified defects.

Abstract: A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.

Abstract: The present invention generally relates to a detection unit of a charged particle imaging system. More particularly, portion of the detection unit can move into or out of the detection system as imaging condition required. With the assistance of a Wein filter (also known as an E×B charged particle analyzer) and a movable detector design, the present invention provides a stereo imaging system that suitable for both low current, high resolution mode and high current, high throughput mode. Merely by way of example, the invention has been applied to a scanning electron beam inspection system. But it would be recognized that the invention could apply to other system using charged particle beam as an observation tool.

Abstract: The present invention provides a charged particle beam apparatus which employs LVSEM to inspect sample surface with a throughput much higher than the prior art. The high throughput is realized by providing a probe current and a FOV both several times of those of the prior art. Accordingly several means are proposed to avoid obvious degradation of image resolution due to the increases in Coulomb effect and geometric aberrations, and increase efficiency and uniformity of secondary charged particle collection.

Abstract: An assembly for a charged particle detection device of high detection efficiency is described. The assembly comprising a metal grid for applying attractive potential to lure charged particles; a scintillator disc to absorb the energy from impinging charged particle and reemit the energy in form of light or photons; a light guide to transmit light or photons; and a photomultiplier tube (PMT) cohere with the end of light guide to receive light or photons from light guide and convert it into current signal. A light guide with a bullet-head-shaped front portion ensures total reflection of light propagating within the light guide. A frustum-cone-shaped scintillator disc releases the light that originally trapped in the scintillator disc due to the shape of scintillator.

Abstract: A method of controlling particle absorption on a wafer sample and charged particle beam imaging system thereof prevents particle absorption by grounding the wafer sample and kept electrically neutral during the transfer-in and transfer-out process.