Abstract: A method for calibrating read levels in a flash memory device is provided. The method includes receiving read information from flash memory in response to a read command, assigning soft information to the received read information, determining an error signal based on the assigned soft information, determining a read level offset based on the error signal, and adjusting a read level in the flash memory by the determined read level offset.

Abstract: Aspects of the subject technology relate to a method for reading information stored in a flash memory device. In some implementations, the method can include steps including, obtaining a first read signal of a first cell, wherein the first cell is located in a first word line and a first bit line in the flash memory device, obtaining a programming level of a second cell, wherein the second cell is located in a second word line and the first bit line, and wherein the second word line is adjacent to the first word line. In certain aspects, the method may further comprise steps for obtaining decoding information for the first cell based on the programming level of the second cell. A data storage system and article of manufacture are also provided.

Abstract: A method for managing a flash storage device includes initiating a read request and reading requested data from a first storage block of a plurality of storage blocks in the flash storage device based on the read request. The method further includes incrementing a read count for the first storage block and moving the data in the first storage block to an available storage block of the plurality of storage blocks when the read count reaches a first threshold value.