Abstract: A power limiting circuit includes: a maximum value prediction filter section (MVPFS) interpolating data of one branched digital input signal; a maximum value detection section detecting maximum value of an output of the MVPFS and a time detection position thereof every constant period; a threshold subtraction section subtracting a threshold from detected maximum value and outputting a peak signal (zero when the subtraction result is negative); a coefficient selection section weighting the peak signal according to time detection position; a complex filter section limiting the weighted peak signal within a band of the input signal; a filter coefficient calculation section calculating filter coefficients of the complex filter section; a delay adjustment section delaying another of the branched input signals by a time period required for calculating the band-limited peak signal; and a subtraction section subtracting the band-limited peak signal from the other of the branched input signals subjected to delay.

Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

Abstract: There are provided a heat treatment apparatus and a method of processing a substrate, which can control uniformity in thickness of a film formed on a substrate.

Abstract: Provided is technology for preventing breakage of an induction target part of a substrate processing apparatus using an induction heating method.

Abstract: An image pickup method using an image pickup apparatus having a charge coupled device (CCD) image pickup device, the method includes: acquiring an effective pixel signal from effective pixels of a light-receiving face of the CCD image pickup device; acquiring a signal outputted from shaded pixels of the light-receiving face to calculate a representative value of the signal; controlling a variable gain amplification above a vertical period of the effective pixel signal in plus correlation with an average above the vertical period of the representative value; and controlling a variable gain amplification of a horizontal period of the effective pixel signal in minus correlation with a ratio between a value of a horizontal period of the representative value or a recursive average in screens of the representative value and an average above a vertical period of the representative value.

Abstract: Only a wafer for QC check may be transferred and a production wafer may prevent from being transferred into an assigned process chamber whose QC check is not completed after a maintenance task, and the production wafer may be processed the assigned process chamber after the completion of the QC check. The wafer for QC check is transferred while inhibiting a transfer of the production wafer into the assigned process chamber, and the production wafer is transferred into each of the process chambers of the plurality except the assigned process chamber.

Abstract: Provided is a substrate processing apparatus comprising: a process chamber for processing a substrate; a heater for heating an interior of the process chamber; a holder for sustaining the substrate in the process chamber; and a substrate transfer plate for transferring the substrate to the holder; wherein the holder has a retainer for sustaining the substrate at its outer periphery and a main body for sustaining the retainer, a portion of the retainer extending at least from a back region thereof with respect to an inserting direction of the substrate transfer plate to a region adjacent thereto and to be sustained by the main body and lying outer than the substrate upon putting the substrate on the retainer being made thicker than other portions of the retainer.

Abstract: The uplink signal circuitry of the base station device includes an authenticating unit, an access right setup unit, and a changeover switch for changeover between the setup of the access right and the authentication process. When a user performs the operation of setting up the right to access to the base station device, the changeover switch is flipped to select the access right setup unit. The access right setup unit executes authentication process on the basis of the IMSI (code unique to user terminal) sent from the user terminal. If the result of authentication is successful, the IMSI of the user terminal is registered in the authentication memory. Thereafter, the changeover switch is flipped to select the authenticating unit to authenticate the user terminal on the basis of the IMSI of the user terminal registered in the authentication memory. The authenticated user terminal is then connected with an upper device.

Abstract: A substrate processing apparatus includes an operating section. The operating section includes a display unit having an operation screen, a screen file that stores daily check data monitor screen data in which a row number is settable as a data number, and a data name is settable as item data of a daily check. The operating section further includes a daily check initial parameter file that stores parameter data corresponding to the item data. The operating section displays the daily check data monitor screen data by extracting the screen file and placing the daily check data monitor screen data on the operation screen as a daily check data monitor screen, and by extracting the daily check initial parameter file, searching through the daily check initial parameter file based on the data number, and placing parameter data corresponding to the item data on the operation screen as the daily check data monitor screen.

Abstract: A substrate processing apparatus having a support for holding a wafer, a processing chamber for accommodating the wafer, a gas supply hole for supplying desired processing gas in a parallel direction to the surface to be processed of the wafer to be accommodated in said processing chamber, an adjustment plate to be arranged with facing the surface to be processed of the wafer accommodated in the foregoing processing chamber, and an exhaust means for exhausting atmosphere in said processing chamber. A substrate processing apparatus wherein distance between the surface to be processed of wafer and the center part of the adjustment plate is narrower than distance between the surface to be processed of wafer and the circumference part and the midway part of the adjustment plate, in a direction perpendicular to a supply direction of processing gas.

Abstract: The present invention provides a non-linear distortion detection method and a distortion compensation amplifying device capable of suppressing increase of the circuit size and the power consumption even if the signal band is widened. A signal obtained by feeding back an output of a power amplifier is sampled by an A/D converter. An equalizer of a distortion detection unit uses an input signal d(n) of a predistorter as a reference symbol to detect an equalization error e(n) of the orthogonal demodulation signal u(n). An absolute value averaging unit outputs an absolute value of the equalization error e(n) which has been temporally averaged to E(n) as a distortion value to a control unit. According to the distortion value, the control unit adaptively controls the predistorter to perform distortion compensation.

Abstract: To provide a manufacturing method of a semiconductor device capable of performing a selective growth at a low temperature. A manufacturing method of a semiconductor device for placing in a processing chamber a substrate having at least a silicon surface and an insulating film surface on a surface; and allowing an epitaxial film to selectively grow only on the silicon surface by using a substrate processing apparatus for heating an atmosphere in the processing chamber and the substrate, using a heating unit disposed outside of the processing chamber, includes a substrate loading step of loading the substrate into the processing chamber; a pre-processing step of supplying dichlorosilane gas and hydrogen gas into the processing chamber while maintaining a temperature in the substrate processing chamber to a prescribed temperature of 700° C.

Abstract: An image reproduction function for reproducing effectively reproducing image recorded in a storage device in diversified forms is provided. A moving picture obtained from one image pickup device is recorded in a plurality of systems at different frame rates. The recorded moving picture is formed of a plurality of still picture data. When reproducing the recorded moving picture, the still picture data forming a moving picture of either one of the systems are reproduced according to a time axis serving as reference for reproduction of the recorded moving picture.

Abstract: A substrate processing apparatus which is capable of improving a manufacture yield while processing a substrate with high precision, and a method of manufacturing a semiconductor device. The substrate processing apparatus includes a substrate support part provided within a process chamber and configured to support a substrate; a substrate support moving mechanism configured to move the substrate support part; a gas feeding part configured to feed a gas into the process chamber; an exhaust part configured to exhaust the gas within the process chamber; and a plasma generating part disposed to face the substrate support part.

Abstract: There are provided a substrate processing apparatus and a method of manufacturing a substrate in which induction heating of members made of a metal material and installed outside an induction coil is suppressed and safety may be improved during processing of a substrate. The substrate processing apparatus includes: a reaction tube for accommodating a substrate; an induction heating unit installed to surround an outer circumference of the reaction tube; a shielding unit installed to surround an outside of the induction heating unit; a gas supply unit for supplying at least a source gas into the reaction tube; and a controller for processing the substrate by heating an inside of the reaction tube using the induction heating unit, and supplying at least the source gas from the gas supply unit into the reaction tube.

Abstract: Provided is a method of manufacturing a semiconductor device using a substrate processing apparatus including a reaction chamber in which a plurality of substrates are stacked at a predetermined distance; a first gas supply nozzle installed to extend to a region in which the plurality of substrates are stacked; a second gas supply nozzle installed to extend to a different position from a position at which the first gas supply nozzle is installed in the region in which the plurality of substrates are stacked; a first branch nozzle installed at the first gas supply nozzle in a direction parallel to major surfaces of the plurality of substrates, at least one line of which is branched in a direction of the second gas supply nozzle, and including at least one first gas supply port; and a second branch nozzle installed at the second gas supply nozzle in the direction parallel to the major surfaces of the plurality of substrates, at least one line of which is branched in a direction of the first gas supply nozzle, a

Abstract: It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.

Abstract: A heat treatment apparatus capable of achieving high-accuracy processing and high safety and a method of manufacturing a substrate are provided. The heat treatment apparatus 10 includes a reaction tube 42 for processing a substrate, a manifold 44 for supporting the reaction tube 42, a heater 46 installed around the reaction tube 42 to heat an inner part of the reaction tube 42, a circumferential portion 500 installed to surround a side portion of the reaction tube 42 arranged in a lower portion than the heater 46; an exhaust device 301 for forcibly exhausting a gap 506 between the circumferential portion 500 and the reaction tube 42; and a sealing member 150 installed in a contacting portion between the reaction tube 42 and the manifold 44. Here, an inlet port 501 through which the exhaust device inhales an atmosphere outside the circumferential portion 500 to the gap 506 is installed in the circumferential portion 500.

Abstract: Embodiments described herein relate to improving the quality of a substrate and the performance of a semiconductor device, which is caused by contaminates or particles being engrained into a substrate with a silicon film formed thereon, and forming a silicon film with a small surface roughness. Provided is a semiconductor device manufacturing method that includes forming a silicon film on a substrate, supplying an oxidation seed onto the substrate, performing heat treatment on the silicon film, modifying the surface layer of the silicon film into an oxidized silicon film, and removing the oxidized silicon film.

Abstract: Provided is a heat treatment apparatus having a temperature detection unit installed outside a reaction chamber and capable of preventing a process gas from contacting the temperature detection unit to form a film and improving reliability and reproduction of a measurement value of the temperature detection unit.