Abstract: A semiconductor device has a diffused layer of a first conductivity type which extends to a buried layer of a second conductivity type, formed in a manner to extend from a part of a surface of a semiconductor layer of the second conductivity type which is epitaxially grown on a semiconductor substrate of the first conductivity type through the buried layer of the second conductivity type. A semiconductor junction capacitance is formed of the diffused layer of the first conductivity type and the buried layer of the second conductivity type, and the concentration of an impurity to be introduced into the buried layer of the second conductivity type is controlled.

Abstract: A motor driving circuit in which the opposite ends of the motor driving coils of a video tape recorder (VTR) capstan motor are shorted by a group of switching elements when a control input voltage generated from a rotation detection/oscillator is in a predetermined range.

Abstract: A signal voltage dividing circuit in which two switched capacitors each including an input terminal, an output terminal and a capacitor connected selectively to the input terminal or the output terminal are connected in series and driven in opposite phase with each other. A holding capacitor is connected between the junction of the two switched capacitors and a reference potential. An input signal is supplied across the two switched capacitors to produce a divided output signal from the junction of the two switched capacitors.

Abstract: In the past, it has been a problem in integrated circuits using MOSFETs that the gate insulating film of a transmission gate MOSFET is broken down when an abnormally high voltage such as is caused by frictional static electricity is applied to its drain region. This breakdown of the gate insulating film cannot be prevented merely by limiting the voltage level applied to the drain region to a level below the breakdown withstand voltage of the gate insulating film. The reason for this is that even with such voltage limiting, the breakdown of the gate insulating film can still occur when local heating is generated by a relatively large breakdown current flowing through the drain junction. To prevent such a breakdown of the gate insulating film, therefore, a resistance element for limiting the breakdown current is connected in series with the drain region of the transmission gate MOSFET.

Abstract: An output of a noise canceller which cancels a noise component from within a composite video signal is applied to an input of an AGC detector which generates an AGC voltage for controlling the gain of a video intermediate frequency amplifier. A circuit controlled by a pulse provided from a vertical oscillator, thereby to control the noise cancelling operation of the noise canceller associated with the operation of the AGC detector into an inoperative state in a vertical flyback time is arranged, so that the lockout phenomenon under various receiving conditions of the television receiver can be prevented.

Abstract: This invention is directed to a punch-through reference diode comprising a first semiconductor region of a first conductivity type which is formed within a semiconductor body; a second semiconductor region of a second conductivity type which is formed within the semiconductor body, the second semiconductor region adjoining the first semiconductor region and defining a first PN-junction with the first semiconductor region; and a third semiconductor region of the first conductivity type which is formed within the semiconductor body, the third semiconductor region adjoining the second semiconductor region and defining a second PN-junction with the second semiconductor region, whereby the second semiconductor region is located between the first PN-junction and the second PN-junction.

Abstract: A converter includes a voltage selector which employs IGFETs as voltage switching elements, and a controller which controls the IGFETs. Each of the IGFETs in the voltage selector is made either the P-channel type or the N-channel type, depending upon a voltage level to be thereby switched and a level of a binary signal supplied from the controller. As a result, a voltage of comparatively great level can be switched by a binary signal of small level amplitude.

Abstract: The phase detection circuit includes a first phase detector for receiving an input signal and a first reference signal, a second phase detector for receiving the input signal and a second reference signal having a different phase from that of the first reference signal and a level discriminator for receiving the phase detection output of the first phase detector. The detection operation of the second phase detector can be inhibited directly by means of the discrimination output of this level discriminator. Accordingly, the phase detection output can be obtained from this phase detection circuit only when the phase difference between the input signal and the first reference signal falls within a predetermined range. The phase detection circuit having such a limiting function is suitable for application to an automatic tint control circuit of a color television receiver.

Abstract: A chroma signal gain control circuit is constructed to include a first band pass amplifier, a second band pass amplifier, a burst gate circuit, a switch circuit and an ACC detecting circuit. The output signal of the first band pass amplifier is fed to the input of the second band pass amplifier, the output signal of which is fed to the input of the burst gate circuit. The switch circuit selectively transmits either the output of the burst gate circuit or the output of the second band pass amplifier to the ACC detecting circuit. The gain of the first band pass amplifier is controlled by feeding the detected output of the ACC detecting circuit to the first band pass amplifier. In order to prevent over-saturation in case the level ratio (C/B) between the color burst signal and the chroma signal exceeds a predetermined value, the switch circuit will selectively transmit the output of the second band pass amplifier to the ACC detecting circuit.