Abstract: A semiconductor device comprising a semiconductor chip with plural electrodes arranged on a main surface thereof, plural leads electrically connected respectively to the plural electrodes on the semiconductor chip, and a resin sealing body which seals the semiconductor chip and the plural leads, wherein the plural leads include first leads and second leads adjacent to the first leads, the first leads having first external connections exposed from a mounting surface of the resin sealing body and positioned near a side face of the resin sealing body, the second leads having second external connections exposed from the mounting surface of the resin sealing body and positioned closer to the semiconductor chip with respect to the first external connections. The first and second leads are fixed to the semiconductor chip. The semiconductor device is suitable for a multi-pin structure and the manufacturing yield thereof is improved.

Abstract: The gate tunnel leakage current is increased in the up-to-date process, so that it is necessary to reduce the gate tunnel leakage current in the LSI which is driven by a battery for use in a cellular phone and which needs to be in a standby mode at a low leakage current. In a semiconductor integrated circuit device, the ground source electrode lines of logic and memory circuits are kept at a ground potential in an active mode, and are kept at a voltage higher than the ground potential in an unselected standby mode. The gate tunnel leakage current can be reduced without destroying data.

Abstract: By using a small number of needles and contact terminals at burn-in, electric contact check is performed between each needle and each terminal provided in each semiconductor chip, and thereby the yield of assembled products can be improved. A packaging structure in which, for example, a volatile memory chip and a nonvolatile memory chip are formed is assembled in accordance with a production scheme in which burn-in of each memory chip is performed while still under the state of a semiconductor wafer, and by forming the packaged structure using the good volatile memory chip subjected to burn-in and likewise, also, the nonvolatile memory chip. At this burn-in, contact check is performed by bringing a needle, provided in a burn-in board, into contact with, for example, six test-only signal terminals of a test circuit formed on each semiconductor chip.

Abstract: A semiconductor device is formed by laminating two semiconductor chips with the rear surfaces thereof provided face to face. Each semiconductor chip is provided with an outer lead for clock enable to which the clock enable signal and chip select signal are individually input. On the occasion of making access to one semiconductor chip, the other semiconductor chip is set to the low power consumption mode by setting the clock enable signal and chip select signal to the non-active condition.

Abstract: A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

Abstract: The present invention provides a memory system which contributes to improvement in efficiency of a data process accompanying a memory access. A memory system has a rewritable nonvolatile memory, a buffer memory, and a controller. The controller controls, in response to an access request from an external apparatus, first data transfer between the controller and the external apparatus, second data transfer between the controller and the nonvolatile memory, and third data transfer between the controller and the buffer memory, controls transfer from the controller to the buffer memory in the third data transfer and transfer from the buffer memory to the controller in a time sharing manner, and enables the first data transfer or the second data transfer to be performed in parallel with the transfer carried out in the time sharing manner.

Abstract: A semiconductor integrated circuit device employing two clock signal generating circuits which output clock signals for distribution to an internal circuit of the device, the first and second clock signal generating circuits having different clock-settling times and the selection thereof is effected from outside of the device. A first one of the clock signal generating circuits uses, for example, a phase-locked loop circuit which has a large clock-settling time, and the second clock signal generating circuit is implemented, for example, using a delay-locked loop circuit whose clock-settling time is small, for example, 2-3 periods. Due to the selective actuation of the second clock signal generating circuit, which has a small clock-settling time, the generating of clock signals for the internal circuits can also be halted when the internal circuits of the device are halted thereby to further lower power consumption without compromising clock oscillator responsiveness.

Abstract: The impact strength resistance of a solder joint portion of a semiconductor device is improved. The semiconductor device has a joint structure wherein a jointing layer which does not contain sulfur substantially is arranged between an underlying conductive layer and a lead-free solder layer and further between the jointing layer and the lead-free solder layer is formed an alloy layer comprising elements of these layers.

Abstract: A CF card (1) comprises: a casing constituted by two panel plates (2, 2) and a frame (3); and a printed wiring board (4) accommodated in the casing. A plurality of claw-like engaging parts (5) are provided to the peripheries of the panel plates (2). When the CF card (1) is assembled, the engaging parts (5) of the first panel plate (2) are inserted into through holes of a long groove (8) provided in the frame (3) and then the printed wiring board (4) is mounted on the panel plate (2) located at the inside of the frame (3). Thereafter, the engaging parts (5) of the second panel plate (2) are inserted into the through holes of the long groove (8) from the surface located in the opposite side of the frame (3). There are two types of engaging parts (5): one having lances and the other having holes. Inside the through holes, the lances of the engaging parts (5) of one panel plate (2) are inserted into the holes of the engaging parts (5) of the other panel plate (2).

Abstract: The back side of a strip substrate with plural semiconductor chips mounted thereon is vacuum-chucked to a lower mold half of a mold, and in this state the plural semiconductor chips are sealed with resin simultaneously to form a seal member. Thereafter, the strip substrate and the seal member are released from the mold and are cut into plural semiconductor devices. The semiconductor devices thus obtained are improved in their mounting reliability.

Abstract: A semiconductor integrated circuit device provided with a SRAM realizing low power consumption and high speed is to be provided. Out of memory circuits which cause a timing generator circuit which selects writable and readable memory cells with the address selector circuit, conveys write signals to a memory cell selected by a write circuit, conveys read signals from a memory cell selected by a read circuit, and receives a clock signal, to generate operational timing signals to be conveyed to an address selector circuit, a write circuit and a read circuit, a circuit in which the operational timing is not too tight is configured of a higher threshold voltage MOSFET than the MOSFETs of other circuits.

Abstract: A semiconductor integrated circuit device comprises a control unit for switching a mode about the trimming or estimation in an internal circuit, the control unit including a controller capable of realizing the mode switching control about the trimming or estimation by the JTAG method. The controller includes an instruction decoder for decoding an input instruction, a shift scan register circuit for enabling a boundary scan based on the decoded result of the instruction decoder, and an operation controller for controlling the operations of the instruction decoder and the shift scan register circuit. Therefore, the trimming becomes possible after sealing a semiconductor chip into a package.

Abstract: A vertical MIS is provided immediately above a trench-type capacitor provided in a memory cell forming region of a semiconductor substrate, and a lateral nMIS is provided in the peripheral circuit forming region of the semiconductor substrate. After forming the capacitor, the lateral nMIS is formed. In addition, after forming the lateral nMIS, the vertical MIS is formed. Furthermore, after forming a capacitor, an isolation part of the peripheral circuit is formed.

Abstract: Described is a method for fabricating a semiconductor device having an FET of a trench-gate structure obtained by disposing a conductive layer, which will be a gate, in a trench extended in the main surface of a semiconductor substrate, wherein the upper surface of the trench-gate conductive layer is formed equal to or higher than the main surface of the semiconductor substrate. In addition, the conductive layer of the trench gate is formed to have a substantially flat or concave upper surface and the upper surface is formed equal to or higher than the main surface of the semiconductor substrate. Moreover, after etching of the semiconductor substrate to form the upper surface of the conductive layer of the trench gate equal to or higher than the main surface of the semiconductor substrate, a channel region and a source region are formed by ion implantation. The semiconductor device thus fabricated according to the present invention is free from occurrence of a source offset.

Abstract: A plate voltage generation circuit comprises: first and second differential circuits (11a, 11b) supplied with a reference voltage (VREF) and an output voltage (VOUT), respectively; a push-pull output circuit (3), connected to the first and second differential circuits, for generating the output voltage; and first and second dead-band control circuits, connected to the first and second differential circuits, respectively, for changing the width of a dead band of the output voltage in accordance with a high level or a low level of dead-band control signals (Sa, Sb) externally supplied.

Abstract: On an adapter mounting portion 3a having a projecting cross section which is formed on a cap 3 of a small-sized memory card 1, a recessed portion of an adapter 2 side is fitted so that both parts are formed as an integral unit in a replaceable manner. Accordingly, the small-sized memory card 1 can maintain the dimensional compatibility with respect to existing memory cards whereby the small-sized memory card 1 can be used also in equipment which is designed to cope with the existing memory cards.

Abstract: Parasitic capacitances formed between bit lines to which signals are to be read out of memory cells and a signal transmission line arranged above them are to be reduced. Second complementary global bit lines for transmitting data read out of memory cells MC via complementary bit lines are arranged above a memory cell array. Each second global bit line is so arranged that a triangle having as its vertexes the center of the section of one of the complementary bit lines, that of the section of the other and that of the section of the second global bit line arranged directly above these complementary bit lines be an isosceles triangle.

Abstract: In the manufacture of a semiconductor device by adopting a block molding method wherein a semiconductor chip is fixed onto a wiring substrate through an adhesive, the occurrence of a defect caused by flowing-out of the adhesive is to be prevented. The semiconductor device according to the present invention comprises a wiring substrate, the wiring substrate having a main surface, an insulating film formed on the main surface, and electrodes formed on the main surface so as to be exposed from the insulating film, a semiconductor chip fixed through an adhesive onto the insulating film formed on the main surface of the wiring substrate, conductive wires for connecting the electrodes on the main surface of the wiring substrate and electrodes on the semiconductor chip with each other, and a seal member, i.e.

Abstract: In a nonvolatile memory in which a load on a boosting circuit changes according to the number of rewrite bytes, the boosting circuit is configured so as to perform voltage boosting at a relatively slow predetermined speed regardless of the number of rewrite bytes, whereby stress applied to each storage element is reduced and rewrite resistance is enhanced.

Abstract: A picture to be reproduced and displayed on a television monitor (10) is discerned as a plurality of partitioned areas in correspondence to keys labeled “1” to “9” disposed on a remote control unit (R). After having zoomed in a picture in a partitioned center area by operating a zoom key disposed on the remote control unit, a partial picture in a partitioned area corresponding to a given one of the keys “1” to “9” is zoomed in with a desired magnification factor in response to operation of the given key. Position of the zoomed-in partial picture on a full screen and the magnification factor thereof can be visually recognized by displaying cursors correspondingly.