Patents Assigned to Hynix Simiconductor
  • Publication number: 20100015758
    Abstract: A nonvolatile memory device and a method for its fabrication may ensure uniform operating characteristics of ReRAM. The ReRam may include a laminated resistance layer that determines phase of ReRAM on an upper edge of a lower electrode for obtaining a stable threshold drive voltage level.
    Type: Application
    Filed: September 25, 2009
    Publication date: January 21, 2010
    Applicant: HYNIX SIMICONDUCTOR INC.
    Inventor: Tae Hoon Kim
  • Publication number: 20100003802
    Abstract: A method for fabricating a fin transistor includes patterning a first pad layer provided over a substrate using an isolation mask, etching the substrate using the isolation mask and the first pad layer to form trenches, filling the trenches with an insulating material to form isolation structures, etching the isolation structures within the trenches using a gas having a high selectivity ratio of the insulating material to the first pad layer to form fin structures, forming a gate insulating layer over the fin structures, and forming a conductive layer over the gate insulating layer.
    Type: Application
    Filed: September 14, 2009
    Publication date: January 7, 2010
    Applicant: Hynix Simiconductor
    Inventor: Kwang-Ok KIM