Abstract: An ion implantation system for producing silicon wafers having relatively low defect densities, e.g., below about 1×106/cm2, includes a fluid port in the ion implantation chamber for introducing a background gas into the chamber during the ion implantation process. The introduced gas, such as water vapor, reduces the defect density of the top silicon layer that is separated from the buried silicon dioxide layer.

Abstract: A wafer holder assembly includes first and second main structural members from which first and second wafer-holding arms extend. The first arm is secured to the main structural members by a graphite distal retaining member. The second arm is pivotally biased to a wafer-hold position by a graphite bias member. This arrangement provides a conductive path from the wafer to the assembly for inhibiting electrical discharges from the wafer during the ion implantation process. The assembly can further include additional graphite retaining members for maintaining the structural integrity of the assembly during the extreme conditions associated with SIMOX wafer processing without the need for potentially wafer-contaminating adhesives and conventional fasteners. The wafer-contacting pins at the distal end of the arms can be formed from silicon. The silicon pins can be coated with titanium nitride to enhance electrical contact with the wafer and to provide an abrasion resistant surface.

Abstract: A magnetic system for uniformly scanning an ion beam comprising a magnetic structure having poles with associated scanning coils and respective pole faces that define therebetween a gap through which the ion beam passes; and a magnetic circuit for producing in the gap a magnetic field of sufficient magnitude to prevent the occurrence of a recently observed plasma effect in which the transverse cross-section of the ion beam substantially fluctuates in size while the ion beam is being scanned across the selected surface.

Abstract: A method of manufacturing SIMOX heterostructures is disclosed wherein a subcritical dose of oxygen ions is implanted following a first, short "nucleating" implant and a nucleation growth step. The SIMOX structure thus formed has a thin, buried oxide layer and sharp interfaces.

Abstract: A method of manufacturing SIMOX heterostructures using a single implant sequence and an increasing range of ion beam energies is disclosed. The method produces SIMOX materials having thin, continuous buried oxide layers having sharp interfaces and which are substantially free of silicon islands.

Abstract: An ion implantation process for producing a buried insulating layer of silicon dioxide in a silicon substrate which takes advantage of the effects of surface erosion and sputtering inherent to the ion implantation process. The process allows the production of an insulating layer buried within a silicon semiconductor wherein the width of the insulating layer can be contoured by controlling the beam energy during implantation.

Abstract: An apparatus for particle implantation is disclosed employing a plurality of particle generators to effectively process wafers of other target substrates carried on a rotating end station. The invention is particularly useful in SIMOX processes where implanted oxygen ions form a buried oxide layer in silicon wafers. In one embodiment, two or more stationary particle generators are disposed at different sectors of a circular track along which the wafers travel to expose the wafers in sequence as they pass. The ion sources can also be offset regularly from each other to increase the radial exposure area. In an other embodiment, the apparatus can further include at least one particle generator which scans the rotating end station in a radial direction as it rotates to insure that uniform ion doses are achieved.