Patents Assigned to Idemitsu Kosan Co., Ltd.
  • Sputtering target for oxide semiconductor, comprising InGaO3(ZnO) crystal phase and process for producing the sputtering target
    Patent number: 8795554
    Abstract: Disclosed is a sputtering target for an oxide semiconductor, comprising In, Ga, and Zn. Also disclosed are a process for producing the sputtering target, a thin film of an oxide semiconductor using a sputtering target, and a method for thin-film transistor formation. The sputtering target comprises an oxide sintered compact containing a compound having a homologous crystal structure represented by InGaO3(ZnO) and exhibits such an X-ray diffraction pattern that the proportion of peaks at 2?=62 to 63 degrees to the maximum peak of InGaO3(ZnO) is not more than 3%.
    Type: Grant
    Filed: June 26, 2009
    Date of Patent: August 5, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Hirokazu Kawashima
  • Light diffusing resin composition and light diffusing plate using the same
    Patent number: 8795824
    Abstract: Provided is a light diffusing resin composition, which, when molded into a large-plane light diffusing plate, is free of yellowing due to thermal deterioration, and can exhibit good light diffusing property, and a light diffusing plate using the resin composition. The light diffusing resin composition includes 100 parts by mass of a polycarbonate resin containing a polycarbonate copolymer (A) having repeating structural units represented by formulae (I) and (II) and 0.01 to 10 parts by mass of a light diffusing agent (B).
    Type: Grant
    Filed: April 9, 2007
    Date of Patent: August 5, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Yasuhiro Ishikawa, Masami Kogure, Hiroshi Kawato
  • Oxide semiconductor field effect transistor and method for manufacturing the same
    Patent number: 8791457
    Abstract: A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8??(1) In/(In+X)=0.29 to 0.99??(2) Zn/(X+Zn)=0.29 to 0.99??(3).
    Type: Grant
    Filed: April 15, 2013
    Date of Patent: July 29, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Hirokazu Kawashima, Kazuyoshi Inoue, Shigekazu Tomai, Masashi Kasami
  • POLYCARBONATE RESIN AND COATING SOLUTION CONTAINING SAME, AND MOLDED ARTICLE PRODUCED BY MOLDING SAID COATING SOLUTION
    Publication number: 20140206814
    Abstract: A molded article produced by molding a coating solution that contains a polycarbonate resin represented by the following formula (1) has excellent transparency, good water repellency and oil repellency, a lower friction coefficient and excellent surface lubricity, having a capability of improving abrasion resistance. In the formula (1), Rf represents a perfluoroalkyl group having 5 or more carbon atoms and 11 or more fluorine atoms or a perfluoroalkyl group having a specific structure; and W represents a divalent group including therein a specific structural unit.
    Type: Application
    Filed: August 16, 2012
    Publication date: July 24, 2014
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Hironobu Morishita, Kengo Hirata
  • Sputtering target and oxide semiconductor film
    Patent number: 8784700
    Abstract: A sputtering target containing oxides of indium (In), gallium (Ga) and zinc (Zn), which includes a compound shown by ZnGa2O4 and a compound shown by InGaZnO4.
    Type: Grant
    Filed: November 30, 2007
    Date of Patent: July 22, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuyoshi Inoue, Koki Yano, Futoshi Utsuno
  • In-Ga-Zn-type oxide, oxide sintered body, and sputtering target
    Patent number: 8784699
    Abstract: An oxide including indium (In), gallium (Ga) and zinc (Zn), wherein diffraction peaks are observed at positions corresponding to incident angles (2?) of 7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5° and 56.5° to 59.5° in an X-ray diffraction measurement (CuK? rays), and one of diffraction peaks observed at positions corresponding to incident angles (2?) of 30.6° to 32.0° and 33.8° to 35.8° is a main peak and the other is a sub peak.
    Type: Grant
    Filed: November 17, 2010
    Date of Patent: July 22, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Masayuki Itose, Hirokazu Kawashima
  • Compound for organic thin film transistor and organic thin film transistor using the same
    Patent number: 8785915
    Abstract: A compound for an organic thin film transistor represented by the following formula (1): wherein at least one pair of adjacent two groups of R1, R3, R5 and R7 is bonded to each other to form a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 60 carbon atoms or a substituted or unsubstituted aromatic heterocyclic ring having 3 to 60 carbon atoms, the ring being fused to the ring to which the groups are bonded; and at least one pair of adjacent two groups of R2, R4, R6 and R8 is bonded to each other to form a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 60 carbon atoms or a substituted or unsubstituted aromatic heterocyclic ring having 3 to 60 carbon atoms, the ring being fused to the ring to which the groups are bonded.
    Type: Grant
    Filed: August 28, 2009
    Date of Patent: July 22, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Yuki Nakano, Masatoshi Saito, Hiroaki Nakamura, Hirofumi Kondo
  • Semiconductor thin film, semiconductor thin film manufacturing method and semiconductor element
    Patent number: 8785920
    Abstract: An amorphous oxide thin film containing amorphous oxide is exposed to an oxygen plasma generated by exciting an oxygen-containing gas in high frequency. The oxygen plasma is preferably generated under the condition that applied frequency is 1 kHz or more and 300 MHz or less and pressure is 5 Pa or more. The amorphous oxide thin film is preferably exposed by a sputtering method, ion-plating method, vacuum deposition method, sol-gel method or fine particle application method.
    Type: Grant
    Filed: April 23, 2008
    Date of Patent: July 22, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuyoshi Inoue, Futoshi Utsuno, Katsunori Honda
  • Laminate structure including oxide semiconductor thin film layer, and thin film transistor
    Patent number: 8785927
    Abstract: A stacked layer structure including an oxide layer and an insulating layer, the oxide layer having a carrier concentration of 1018/cm3 or less and an average crystal diameter of 1 ?m or more; and the crystals of the oxide layer being arranged in a columnar shape on the surface of the insulating layer.
    Type: Grant
    Filed: December 27, 2011
    Date of Patent: July 22, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuaki Ebata, Shigekazu Tomai, Yuki Tsuruma, Shigeo Matsuzaki, Koki Yano
  • Organic electroluminescence device and anthracene derivative
    Patent number: 8785006
    Abstract: An anthracene derivative having a specific asymmetric structure is provided. The asymmetric anthracenes are useful in an organic electroluminescence device and exhibit efficient light emission and a long performance lifetime.
    Type: Grant
    Filed: May 29, 2012
    Date of Patent: July 22, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Hidetsugu Ikeda, Motohisa Ido, Masakazu Funahashi
  • Lubricating oil composition for continuously variable transmissions
    Patent number: 8778855
    Abstract: A lubricating base oil contains: an overbased calcium sulfonate having a different base number provided such that a total base number is in a range of 280 to 500 mgKOH/g and a calcium concentration in a total amount is in a range of 280 to 3000 mass ppm (in terms of calcium); and orthophosphates that is at least one selected from phosphates and acid phosphates and provided such that a phosphorus concentration is 50 mass ppm or more. A high friction coefficient of 0.11 or more and a favorable wear resistance of a specific wear rate of less than 2.0×10?8 mm3/Nm are obtained, thereby reliably providing a high power transmission capacity for a long period of time, particularly in a belt-type continuously variable transmission equipped with a metallic belt.
    Type: Grant
    Filed: February 6, 2008
    Date of Patent: July 15, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventor: Toshihiko Ichihashi
  • Organic electroluminescence device and material for organic electroluminescence device
    Patent number: 8779655
    Abstract: An organic electroluminescence device includes: a cathode; an anode; and a single-layered or multilayered organic thin-film layer provided between the cathode and the anode. The organic thin-film layer includes at least one emitting layer. The at least one emitting layer contains at least one phosphorescent material and a host material represented by the following formula (1).
    Type: Grant
    Filed: July 3, 2008
    Date of Patent: July 15, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuki Nishimura, Toshihiro Iwakuma, Kenichi Fukuoka, Chishio Hosokawa, Masahiro Kawamura, Mitsunori Ito, Yoriyuki Takashima, Toshinari Ogiwara
  • TFT substrate and method for producing TFT substrate
    Patent number: 8778722
    Abstract: An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate comprises: a substrate; a first oxide layer formed above the substrate; a second oxide layer formed above the first oxide layer with a channel part interposed therebetween; gate insulating film formed above the substrate, the first oxide layer and the second oxide layer; a gate electrode and a gate wire formed above the gate insulating film.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: July 15, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuyoshi Inoue, Koki Yano, Tokie Tanaka
  • Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor
    Patent number: 8779419
    Abstract: An object of the present invention is to provide a novel semiconductor device which is excellent in stability, uniformity, reproducibility, heat resistance, durability and the like, and can exert excellent transistor properties. The semiconductor device is a thin-film transistor, and this thin-film transistor uses, as an active layer, a polycrystalline oxide semiconductor thin film containing In and two or more metals other than In and having an electron carrier concentration of less than 1×1018/cm3.
    Type: Grant
    Filed: March 9, 2012
    Date of Patent: July 15, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Inoue Kazuyoshi
  • Pyrromethene-boron complex compounds and organic electroluminescent elements using same
    Patent number: 8778510
    Abstract: A pyrromethene-boron complex compound represented by the following formula (1); wherein Z1 and Z2 are independently a hydrogen atom, a substituted or unsubstituted aryl group, a substituted or unsubstituted alkoxy group or a substituted or unsubstituted aryloxy group, at least one of Z1 and Z2 is an alkoxy group substituted with a fluorine atom or an aryloxy group substituted with a fluorine atom or a fluoroalkyl group, and Z1 and Z2 may form a ring.
    Type: Grant
    Filed: February 25, 2010
    Date of Patent: July 15, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Fumio Okuda, Kiyoshi Ikeda, Takayasu Sado, Takahiko Ochi, Yoshimitsu Tanabe, Bunji Sawano
  • BISCARBAZOLE DERIVATIVE AND ORGANIC ELECTROLUMINESCENCE ELEMENT USING SAME
    Publication number: 20140191225
    Abstract: A biscarbazole derivative is represented by the following formula (1). A1 and A2 of the following formula (1) represent an aromatic hydrocarbon group having 6 to 30 ring carbon atoms or an aromatic heterocyclic group having 1 to 30 ring carbon atoms. However, at least one of A1 and A2 represents an aromatic heterocyclic group having 1 to 30 ring carbon atoms. Y1 to Y15 represent CR or a nitrogen atom. One of Y8 to Y11 is C (carbon atom) obtained by removing R from CR. The obtained C is bonded to L3. R each independently represents a hydrogen atom, an aromatic hydrocarbon group or the like. L1 to L3 represent a single bond or a divalent linking group. When L3 is a single bond and is bonded to Y11, L1 and L2 are divalent linking groups.
    Type: Application
    Filed: August 15, 2012
    Publication date: July 10, 2014
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Tetsuya Inoue, Mitsunori Ito, Kazuki Nishimura, Kumiko Hibino
  • LUBRICANT COMPOSITION FOR INTERNAL COMBUSTION ENGINE OIL
    Publication number: 20140194329
    Abstract: The present invention provides a lubricating oil composition for internal combustion engines which includes a boronated imide-based dispersant, or the boronated imide-based dispersant and a non-boronated imide-based dispersant, in which a boron content (B % by mass) derived from the boronated imide-based dispersant and a nitrogen content (N % by mass) derived from the boronated imide-based dispersant or derived from the boronated imide-based dispersant and the non-boronated imide-based dispersant satisfy the following formula (I): N?B+0.05 (I); and a phosphorus content (P % by mass) and a content of a metal component (M % by mass) derived from a metallic detergent on the basis of a total amount of the composition satisfy any of the following requirements A to C: A: P<0.03 and M<0.05; B: P<0.03 and 0.05?M?0.12; and C: 0.03?P?0.06 and M<0.05.
    Type: Application
    Filed: August 3, 2012
    Publication date: July 10, 2014
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Yasunori Shimizu, Hiroshi Fujita
  • A-OLEFIN OLIGOMER AND PRODUCTION METHOD THEREOF
    Publication number: 20140194637
    Abstract: An ?-olefin oligomer having the following features (1) to (6), and a method for producing the ?-olefin oligomer using a particular double-crosslinked meso complex provide an ?-olefin oligomer that contains a smaller amount of a dimer component while having a low viscosity, not in accordance with the Schulz-Flory distribution, and a method for producing the same: (1) a trimer component proportion C3 (% by mass) that is larger than a theoretical value obtained from the S—F distribution, (2) a hexamer component proportion C6 (% by mass) that is smaller than a theoretical value obtained from the S—F distribution, (3) a kinematic viscosity at 100° C. of 20 mm2/s or less, (4) a meso triad fraction [mm] measured by 13C-NMR of 40% by mol of less, (5) from 0.2 to 1.
    Type: Application
    Filed: July 31, 2012
    Publication date: July 10, 2014
    Applicant: IDEMITSU KOSAN CO., LTD.
    Inventors: Minako Tsuji, Takuji Okamoto, Takenori Fujimura, Yutaka Minami
  • Method for producing petroleum resin
    Patent number: 8772444
    Abstract: A method for producing a petroleum resin including removing a low-molecular mist by means of a filter.
    Type: Grant
    Filed: July 7, 2011
    Date of Patent: July 8, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Hajime Takasugi, Katsumi Furuta, Kazunori Saeki
  • Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes
    Patent number: 8773628
    Abstract: Provided are thin film transistor substrates, thin film transistor liquid crystal displays, thin film transistors, TFT substrates for liquid crystal displays, liquid crystal displays provided with TFT substrates and liquid crystals, pixel electrodes for driving a liquid crystals, and transparent electrodes, an processes for the preparation thereof.
    Type: Grant
    Filed: August 29, 2011
    Date of Patent: July 8, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuyoshi Inoue, Shigekazu Tomai, Masato Matsubara