Abstract: A chip antenna comprising at least one emitter which extends parallel to a main surface of a semiconductor substrate supporting the chip antenna, wherein the emitter is arranged on an island-like support zone of the semiconductor substrate, the support zone being surrounded by at least one trench which is completely filled with a gas, the trench passing through the entire depth of the semiconductor substrate and being bridged by at least one retaining web which forms a supporting connection between the support zone and the rest of the semiconductor substrate.

Abstract: A device for multiplying two bit sequences has a controller that selects and activates exactly one multiplier unit from a plurality of parallel multiplier units, according to a random signal. A partial multiplier unit shared by all the multiplier units receives and multiplies operands formed by the respectively activated multiplier unit. Each multiplier unit implements a different multiplication method with a respective selector unit that selects segments of the bit sequences to be multiplied, in accordance with a selection plan adapted to the respective multiplication method, to form operands from one or more segments and outputs the operands. The respective accumulation unit receives step by step partial products from the partial multiplier unit, accumulates the partial products in accordance with an accumulation plan adapted to the implemented multiplication method and matching the selection plan, and outputs the calculated product of after accumulation has been completed.

Abstract: A hot hole transistor with a graphene base comprises on a substrate an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layer is arranged between the base layer and the emitter layer, and a collector barrier layer is arranged between the base and the collector layers and adjacent to the graphene layer.

Abstract: A light emitting semiconductor device according the invention includes an SOI substrate, a collector and an injector. The SOI substrate includes a carrier layer, a buried oxide layer on the carrier layer, and a doped silicon layer structure with a conductivity type. The doped silicon layer structure with the conductivity type includes at least two silicon- or silicon germanium layers arranged adjacent to one another, wherein a dislocation network is configured in their interface portions at which dislocation network a radiative charge carrier combination with a light energy is provided, which light energy is smaller than a band gap energy of the silicon- or silicon germanium layers. The collector is formed as a pn-junction in a portion between the dislocation network and a surface of the silicon layer structure that is oriented away from the carrier layer, and wherein the injector is configured as a metal insulator semiconductor diode.

Abstract: A method for producing a MEMS component including the steps of simultaneously embedding structure elements during producing the multi-level conductive path layer stack which structure elements are to be subsequently exposed, subsequently producing a recess that extends from a substrate backside to the multi-level conductive path layer stack, exposing the micromechanical structure elements in the multi-level conductive path layer stack through the recess. In order to increase process precision a reference mask for defining a lateral position or a lateral extension of the micromechanical structure elements to be exposed is produced, wherein the reference mask is either arranged on the substrate front side between the substrate and the multi-level conductive path layer stack or in a layer of the multi-level conductive path layer stack which layer is more proximal to the substrate than the structure element to be exposed.

Abstract: A thermoelectric semiconductor component, comprising an electrically insulating substrate surface and a plurality of spaced-apart, alternating p-type (4) and n-type semiconductor structural elements (5) which are disposed on said surface and which are connected to each other in series in an electrically conductive manner alternatingly at two opposite ends of the respective semiconductor structural elements by conductive structures, in such a way that a temperature difference (2?T) between the opposite ends produces an electrical voltage between the conductive structures or that a voltage difference between the conductive structures (7, 9; 13, 15) produces a temperature difference (2?T) between the opposite ends, characterized in that the semiconductor structural elements have a first boundary surface between a first and a second silicon layer, the lattice structures of which are considered ideal and are rotated by an angle of rotation relative to each other about a first axis perpendicular to the substrate su

Abstract: The present invention relates to a protocol accelerator module for a data transmission protocol level of a transceiver, particularly but not exclusively for rapid forwarding of data packets in wireless sensor networks using the time-division multiple access method according to the IEEE 802.15.4 standard. The invention also relates to a method of transceiver operation for rapid forwarding of data packets, likewise particularly, but not exclusively, in wireless sensor networks using the time-division multiple access method according to the IEEE 802.15.4 standard. The core of the invention is a reference table which stores references from identifiers of second transceivers to identifiers of third transceivers as well as references from specific messages to identifiers of third transceivers. A transceiver can check during reception of a data packet whether it is a data packet to be forwarded, and can take appropriate precautions for rapid sending of a data packet to be forwarded.

Abstract: The present invention relates to a device (2000) and a method for encoding an input signal (102) into a digital pulse-width and/or phase modulated output signal (162). The present invention also relates to a transmission method, a power amplifier and a transmitter. With the aid of a mapping process comprising at least three-stages, a sequence of output pulses (162) is generated which corresponds on average over time to a theoretical, previously computed target pulse. In this way, the device (2000) or the method can be digitally implemented and a large part (100, 110) of the device (2000) can also be operated at a clock rate that is substantially lower than a clock rate of the output signal generator (200, 220).

Abstract: A parallel digital-analog converter for the conversion of a plurality of differential digital input signals into a differential analog output signal, including a group of 1-bit digital-analog converters (200) which respectively include an intermediate storage cell (202) and a current cell (201) and which are adapted to feed a respective output current to a first (204) or a second output contact (206) in dependence on a logic state of the intermediate storage cell, wherein a first of two outputs of an intermediate storage cell (202) is connected by way of an input resistor (220) to a first signal terminal (208.1) of a first transistor (208) and a second of the two outputs of the intermediate storage cell (202) is connected by way of an input resistor (218) to a first signal terminal (210.

Abstract: A light-emitting semiconductor component comprising a substrate which has a first interface between a first and a second silicon layer, whose lattice structures which are considered as ideal are rotated relative to each other through a twist angle about a first axis perpendicular to the substrate surface and are tilted through a tilt angle about a second axis parallel to the substrate surface, in such a way that a dislocation network is present in the region of the interface, wherein the twist angle and the tilt angle are so selected that an electroluminescence spectrum of the semiconductor component has an absolute maximum of the emitted light intensity at either 1.3 micrometers light wavelength or 1.55 micrometers light wavelength.

Abstract: An MEMS component including a monolithically integrated electronic component with a multi-plane conductor track layer stack which is arranged on a substrate and into which is integrated a cantilevered elastically movable metallic actuator which is arranged in the multi-plane conductor track layer stack at the level of a conductor track plane and is connected by via contacts to conductor track planes which are arranged thereabove or therebeneath and which apart from an opening in the region of the actuator are separated from the conductor track plane of the actuator by a respective intermediate plane insulator layer, wherein the actuator is formed from a metallically conductive layer or layer combination which is resistant to corrosive liquids or gases and which contains titanium nitride or consists of titanium nitride.

Abstract: A chip arrangement comprising a first chip having at least one first signal interface with first coupling elements arranged along a first line in a first number density and at least one second chip with at least one second signal interface with second coupling elements arranged along a second line in a second number density, where the first and second coupling elements permit contactless signal transmission between the first and second signal interfaces, where the two chips are so arranged relative to each other that coupling elements of the first and second signal interfaces can contactlessly transmit signals with each other, where the longitudinal extent of at least one of the signal interfaces along the line associated therewith is greater than the length of the overlap of the two longitudinal extents, and where one of the signal interfaces has a greater number density of coupling elements than the other.

Abstract: The invention concerns an electronic circuit comprising a sigma-delta modulator and a power amplifier connected downstream thereof, wherein there is provided a feedback circuit (207) which is coupled between an output of the sigma-delta modulator and an input of the sigma-delta modulator and which includes an emulation of the signal path between the output of the sigma-delta modulator and the output of a power amplifier (107) connected downstream of said sigma-delta modulator.

Abstract: A CORDIC unit for the iterative approximation of a vector rotation through a rotary angle ? by a number of elementary rotations through elementary angles ?i, including elementary rotation stages for respectively affecting an elementary rotation through an elementary angle ?i as an iteration step in the iterative approximation. After such an elementary rotation there remains a residual angle through which rotation is still to be affected. The elementary rotation stages of the CORDIC unit are adapted for rotation through elementary angles ?i given by powers of two with a negative integral exponent. The CORDIC unit can also include a triggering device for triggering the elementary rotations, a triggering device which is adapted prior to each iteration step to compare the residual angle to at least one of the elementary angles and to omit those elementary rotation stages whose elementary angles are greater than the residual angle.

Abstract: The invention relates to layers in substrate wafers. The aim of the invention is to provide layers in substrate wafers with which the drawbacks of conventional assemblies are overcome in order to achieve, on the one hand, an adequate resistance to latch-up in highly scaled, digital CMOS circuits with comparatively low costs and, on the other hand, to ensure low substrate losses/couplings for analog high-frequency circuits and, in addition, to influence the component behavior in a non-destructive manner.

Abstract: A method of reducing a phase error caused by a plurality of error sources in a signal in the form of a sequence of a plurality of digital partial signals associated with a number of subcarriers (k) of a carrier, the method including, for each partial signal: equalization of the partial signal (Y(i,k)), estimation of the phase error of the equalized partial signal (X(i,k)), and correction of the estimated phase error of the equalized partial signal. One embodiment provides the equalization with elimination of an accumulation of a phase error over the sequence of the partial signals. In addition the estimation includes detecting a plurality of predetermined pilot signals and determining a phase correction factor on the basis of the detected pilot signals, with at least one multiplication operation carried out solely by means of shift and adding operations. A corresponding apparatus is also described.

Abstract: The invention concerns a semiconductor component and an associated production process having a silicon-bearing layer, a praseodymium oxide layer and a mixed oxide layer arranged between the silicon-bearing layer and the praseodymium oxide layer and containing silicon, praseodymium and oxygen. It is possible because of the mixed oxide layer on the one hand to improve the capacitance of the component and on the other hand to achieve a high level of charge carrier mobility without the necessity for a silicon oxide intermediate layer.

Abstract: The semiconductor device according to the invention includes a substrate, a field insulating region which delimits an active region of the semiconductor substrate, a collector, at least one collector contact region associated with the collector, and a base with an associated base connection region. The collector and the collector contact region are formed in the same active region. In addition the base connection region extends partially over the active region and is separated from the surface of the active region by an insulator layer.

Abstract: The invention concerns a bipolar transistor with an epitaxially grown base and a self-positioned emitter, whereby the base is formed from a first substantially monocrystalline epitaxial region (1) which is arranged in parallel relationship to the surface of the semiconductor substrate (2) and a second substantially polycrystalline and highly doped region (3) of the same conductivity type which is arranged in perpendicular relationship to the substrate surface and encloses the first region at all sides and that said second region, at least at one side but preferably at all four sides, is conductingly connected to a third, preferably highly doped or metallically conducting, high temperature-resistant polycrystalline layer (4) which is arranged in parallel relationship to the surface of the semiconductor substrate and forms or includes the outer base contact to a metallic conductor track system.

Abstract: A lateral CMOS-compatible RF-DMOS transistor (RFLDMOST) with low ‘on’ resistance, characterised in that disposed in the region of the drift space (20) which is between the highly doped drain region (5) and the control gate (9) and above the low doped drain region LDDR (22, 26) of the transistor is a doping zone (24) which is shallow in comparison with the penetration depth of the source/drain region (3, 5), of inverted conductivity type to the LDDR (22, 26) (hereinafter referred to as the inversion zone) which has a surface area-related nett doping which is lower than the nett doping of the LDDR (22, 26) and does not exceed a nett doping of 8E12 At/cm2.