Abstract: A DWT unit applies wavelet transform to an input signal to output transform coefficients, and a quantization unit quantizes those transform coefficients with a quantization step size determined according to target image quality. Then, a rate control unit controls the rate of coded data according to information on the quantization step size. Also, an image-quality control unit controls the rate of only part of coded data which is determined from a priority table. This achieves a compression encoder which operates at high speed with minimal operations.

Abstract: In image input devices such as digital still cameras, processing is speeded up and power consumption is reduced by arranging in a RPU (23) performing real time processing of a pixel data from a CCD (21), such that only special exceptional image processing not being prepared previously is subjected to a software program processing in a CPU (24) and, in post processing in which a general image processing is carried out, a pixel data temporarily stored in a main memory (29) is inputted again to the RPU (23) and then processed. This enables to sharply speed up processing, and minimize a prolonged processing in the CPU (24) to reduce power consumption, when compared to the case of executing by software problem processing.

Abstract: First pixel data of a pixel of interest is output from a first shift register, while second and third pixel data of neighboring pixels indicative of the same color are output from second and third shift registers, respectively. Differential data between estimated pixel data calculated from the second and third pixel data and the first pixel data is input to a comparator. A threshold value stored in a register is modulated by the estimated pixel data, and is input to the comparator as modulated threshold data. When the comparator judges that the differential data is greater than the modulated threshold data, a selector outputs the estimated pixel data as corrected pixel data.

Abstract: The present invention discloses a photo driver circuit with power saving function and a corresponding method thereof. The photo driver circuit with power saving function comprises: a photo sensor device for sensing light and generating a corresponding photo current; a current amplifier amplifying the photo current; an output control circuit for generating a driver output signal according to the output of the current amplifier; and a power saving control circuit for activating a power saving mode in which the power saving control circuit outputs one or more control signals to shut down one or both of the current amplifier and the output control circuit.

Abstract: A multi-project system-on-chip bench by integrating multiple system-on-chip projects into a chip, which uses a system chip bench, therefore, microprocessor, bus, embedded memory, peripheral component and input/output port is used together by those system-on-chip projects and the average cost of each system-on-chip is thus reduced. Moreover, this invention proposes a design method for multi-project system-on-chip bench, it let the user can effectively manage available data and verification environment in each design process flow hierarchy and in turn an easy-to-use design process flow is thus derived.

Abstract: The present invention provides an image sensor module. The image sensor module has a die formed on a substrate, the die having a micro lens area, a lens holder formed on the substrate and over the die, a lens formed in the lens holder. A filter is formed within the lens holder and between the lens and the die, and at least one passive device formed on the substrate and covered within the lens holder. Conductive bumps or LGA (leadless grid array) are formed on the bottom surface of the substrate.

Abstract: To pick and place standard dice on a new base for obtaining an appropriate and wider distance between dice than the original distance of dice on a wafer. The package structure has a larger size of balls array than the size of the die by fan out type package. Moreover, the die may be packaged with passive components or other dice with a side by side structure or a stacking structure.

Abstract: A method for circuit inspection comprises steps of providing a substrate having a conductive line; and forming a metal layer on at least the conductive layer to increase a contrast between the conductive layer and adjacent area for the circuit inspection. The method further comprising removing the metal layer. The metal layer is removed by a mixture of nitric acid, hydrogen peroxide and fluoride boric acid. The metal includes Silver, Nickel or Tin. The deposit metal can be removed by inter diffusion and form intermetallic compounds (for example Cu6Sn5) into the under laying conducting line.

Abstract: An image sensor die comprises a substrate and an image sensor array formed over the substrate. Micro lens are disposed on the image sensor array. A protection layer is formed on the micro lens to prevent the micro lens from particle containment.

Abstract: The present invention provides a semiconductor device package having multi-chips with side-by-side configuration comprising a substrate with die receiving through holes, connecting through holes structure and first contact pads on an upper surface and second contact pads on a lower surface of the substrate. A first die having first bonding pads and a second die having second bonding pads are respectively disposed within the die receiving through holes. The first adhesion material is formed under the first and second die and the substrate, and the second adhesion material is filled in the gap between the first and second die and sidewall of the die receiving though holes of the substrate. Further, bonding wires are formed to couple between the first bonding pads and the first contact pads, between the second bonding pads and the first contact pads. A dielectric layer is formed on the bonding wires, the first and second die and the substrate.

Abstract: To pick and place standard dice on a new base for obtaining an appropriate and wider distance between dice than the original distance of dice on a wafer. The package structure has a larger size of balls array than the size of the die by fan out type wafer level package. Moreover, the die may be packaged with passive components or other dice with a side by side structure or a stacking structure.

Abstract: An image sensor die comprises a substrate and an image sensor array formed over the substrate. Micro lens are disposed on the image sensor array. A protection layer is formed on the micro lens to prevent the micro lens from particle containment.

Abstract: The present invention discloses an image sensor module and forming method of wafer level package. The image sensor module comprises a metal alloy base, a wafer level package, a lens holder, and flexible printed circuits (F.P.C.). The wafer level package having a plurality of image sensor dice and a plurality of solder balls is attached to the metal alloy base. A plurality of lens are placed in the lens holder, and the lens holder is located on the image sensor dice. The lens holder is placed in the flexible printed circuits (F.P.C.), and the flexible printed circuits (F.P.C.) has a plurality of solder joints coupled to the solder balls for conveniently transmitting signal of the image sensor dice. Moreover, the image sensor dice may be packaged with passive components or other dice with a side by side structure or a stacking structure.

Abstract: A sensor such as a CCD image pickup device is equipped with a color filter of RGB Bayer array. An image is read from such a sensor (S1) and inputted to a color interpolation device as raw data (S2). The color interpolation device calculates additional values DH and DV of differential absolute values of pixel values in a horizontal direction and a vertical direction by using pixels of all colors in a peripheral area of a specified pixel (S3 and S4). The additional values DH and DV are compared with each other (S5) and when it is judged that there is a tendency of pixel drift in the horizontal direction or the vertical direction, S6 is executed. In S6, when a correlation in the vertical direction is strong, an interpolation using vertical adjacent pixels is performed and when a correlation in the horizontal direction is strong, an interpolation using horizontal adjacent pixels is performed. By this method, it is possible to improve the accuracy of color interpolation.

Abstract: The present invention provides an image sensor module having build-in package cavity and the Method of the same. An image sensor module structure comprising a substrate with a package receiving cavity formed within an upper surface of the substrate and conductive traces within the substrate, and a package having a die with a micro lens disposed within the package receiving cavity. A dielectric layer is formed on the package and the substrate, a re-distribution conductive layer (RDL) is formed on the dielectric layer, wherein the RDL is coupled to the die and the conductive traces and the dielectric layer has an opening to expose the micro lens. A lens holder is attached on the substrate and the lens holder has a lens attached an upper portion of the lens holder. A filter is attached between the lens and the micro lens. The structure further comprises a passive device on the upper surface of the substrate within the lens holder.

Abstract: An aminated oligonucleotide probe is provided, in which the amino group possesses improved reactivity. The present invention relates to an oligonucleotide probe, which is represented by general formula 1: (wherein R1 is a hydrogen atom or a protecting group for an amino group, R2 and R3 are each independently a divalent organic group, and A is an oligonucleotide).

Abstract: A power Schottky rectifier device and method of making the same are disclosed. The Schottky rectifier device includes a LOCOS structure grown on the bottom of the trenches by using nitride spacer on the sidewall of the trenches as a thermal oxidation mask. A polycrystalline silicon layer is then filled the first trenches. Under LOCOS structure, a p doped region is optionally formed to minimize the current leakage when the device undergoes a reverse biased. A Schottky barrier silicide layer formed by sputtering and annealing steps is formed on the upper surfaces of the epi-layer and the polycrystalline silicon layer. A top metal layer served as anode is then formed on the Schottky barrier silicide layer and extended to cover a portion of field oxide region of the termination trench. A metal layer served as a cathode electrode is then formed on the backside surface of the substrate opposite to the top metal layer.

Abstract: A filling paste structure and process of wafer level package is disclosed. The process comprises filling an adhesive material to fill among plurality of dice and cover the plurality of dice. The pluralities of dice are adhered to glue pattern with viscosity in common state formed on a removable substrate. A rigid substrate is coated by adhesive material to adhere the dice. Then, pluralities of dice are departed from the glue pattern by a special environment after attaching the rigid base substrate.

Abstract: A transcoder calculates a reference conversion factor on the basis of a ratio between a total target bit rate of a whole second stream and an total input bit rate of a whole first stream and calculates a coefficient of variation from the total target bit rate of the whole second stream and an average output bit rate of a converted second stream in the N period. Next, a quantization step conversion factor in the next (N+1) period is calculated by adding the coefficient of variation to the reference conversion factor. Then, a quantization step value of a second stream in the (N+1) period is calculated by multiplying a quantization step value of a first stream in the (N+1) period by the quantization step conversion factor.

Abstract: A wafer level package comprises a wafer having a plurality of dice formed thereon; a thinner metal cover with a cavity formed therein attached on the wafer by an adhesive material to improve thermal conductivity of the package. A protection film is formed on back side of the metal cover and filled into the cavity, thereby facilitating for laser marking and obtaining a better sawing quality of the package.