Abstract: Disclosed is a semiconductor light-emitting device wherein a pn junction is formed by forming, as a p-type layer (11), a semiconductor thin film which is composed of a ZnO compound doped with nitrogen on an n-type ZnO bulk single crystal substrate (10) whose resistance is lowered by being doped with donor impurities. It is preferable to form the p-type layer (11) on a zinc atom containing surface of the n-type ZnO bulk single crystal substrate (10).

Abstract: The laser projector system draws vector-oriented graphic by scanning laser beam with the X-Y scanner, and comprises: a laser source (201) for projecting laser beam; a galvanometer scanner (202) for scanning laser beam with the X-Y mirror (203) to freely control the direction of laser beam; a scanner amp (205) for controlling projection output of laser beam; a scanner controller (204) for controlling the galvanometer scanner and the scanner amp; and a computer (207) connected to the scanner controller (204).

Abstract: The invention provides a flake graphite cast iron being highly strong and excellent in workability such as cutting performance, which is suitable for use, for example, in internal combustion engine parts and the like, and a production method thereof without using a misch metal. Specifically, the flake graphite cast iron according to the invention includes an A-type graphite with a uniformly and disorderly distributed existence form without directionality; and has a chemical composition containing 2.8 to 4.0 mass % of C, 1.2 to 3.0 mass % of Si, 1.1 to 3.0 mass % of Mn, 0.01 to 0.6 mass % of P, 0.01 to 0.30 mass % of S and the remainder being Fe and inevitable impurities, wherein the ratio (Mn/S) of the Mn content to the S content is within a range of 3 to 300.

Abstract: The invention provides a secondary battery that has good adhesion between a thin substrate and an active material, is thinner and lighter in weight, has flexibility, and has excellent charge/discharge characteristics, and a method of manufacturing the secondary battery. The secondary battery includes a cell having, in order, a positive electrode active material layer, an electrolyte layer, and a negative electrode active material layer, or a cell having, in order, a negative electrode active material layer, an electrolyte layer, and a positive electrode active material layer, wherein the cell is formed on a conductive thin substrate having a surface roughness RMS of 0.8 ?m or less.

Abstract: A neuronal cell death induced by an oxidative glutamate toxicity is substantially inhibited by administrating to an mammal an effective amount of a phenylenediamine derivative compound of formula (I), wherein R is phenyl or butyl.

Abstract: A large-scale sound system or communication system is numerically and stably identified. When an input signal is represented by the M(?N)-th order AR model, high-speed H? filtering can be performed with a computational complex 3N+O(M). A processing section determines the initial state of a recursive equation (S201), sets CUk according to an input uk (S205), determines a variable recursively (S207), updates a matrix GkN, calculates an auxiliary gain matrix KUkN (S209) divides it (S211), calculates a variable DkM and a backward prediction error ?M, k (S213), calculate a gain matrix Kk (S215), and updates a filter equation of a high-speed H? filter (S217). To reduce the computational complexity, Kk(:, 1)/(1+?f Hk Kk (:, 1)) is directly used as the filter gain Ks, k.

Abstract: This is to provide an all solid state secondary battery which can be produced by an industrially employable method capable of mass-production and has excellent secondary battery characteristics.

Abstract: Disclosed is a semiconductor light-emitting device wherein a pn junction is formed by forming, as a p-type layer (11), a semiconductor thin film which is composed of a ZnO compound doped with nitrogen on an n-type ZnO bulk single crystal substrate (10) whose resistance is lowered by being doped with donor impurities. It is preferable to form the p-type layer (11) on a zinc atom containing surface of the n-type ZnO bulk single crystal substrate (10).

Abstract: [Object] Various electric wave absorbers for the GHz band have been developed. However, parameters for obtaining the optimal electric wave absorption characteristic are only the shape and the content of a dielectric material or a conductive material, and the degree of freedom of the parameters has been small. Furthermore, in a recent wireless LAN, electric wave absorbers that can be used for absorbing potentially dangerous electric waves in a plurality of bands, for example, in two frequency bands of 2.45 GHz band and 5.2 GHz band, have also been desired.

Abstract: A magnesium boride thin film having a B-rich composition represented by the general formula of MgBx (x=1 to 10) and a superconducting transition temperature of 10K or more has superior crystallinity and orientation and is used as a superconducting material. This thin film is formed by maintaining a film forming environment in a high vacuum atmosphere of 4×10?5 Pa or less, and simultaneously depositing Mg and B on a substrate maintained at a temperature of 200° C. or less so as to grow the film at a growth rate of 0.05 nm/sec or less. It is preferable to supply an Mg vapor and a B vapor into the film forming environment at an Mg/B molar ratio of 1/1 to 12/1.

Abstract: A neuronal cell death induced by an oxidative glutamate toxicity is substantially inhibited by administrating to an mammal an effective amount of a phenylenediamine derivative compound of formula (I), wherein R is phenyl or butyl.

Abstract: A photovoltaic ultraviolet sensor comprises a zinc oxide single crystal substrate. On the +c face of the zinc oxide single crystal substrate, an ultraviolet receiver is formed. The exemplary ultraviolet receiver includes a Schottky electrode which, when receiving ultraviolet rays, produces a voltage in cooperation with the zinc oxide single crystal substrate. The ultraviolet sensor does not have any sensitivity to the visible rays. The ultraviolet sensor has a relatively fast response of several microseconds.