Abstract: A method of producing an implantation ion energy filter, suitable for processing a power semiconductor device. In one example, the method includes creating a preform having a first structure; providing an energy filter body material; and structuring the energy filter body material by using the preform, thereby establishing an energy filter body having a second structure.
Abstract: Various embodiments provide a method for processing a carrier, the method including changing the three-dimensional structure of a mask layer arranged over the carrier so that at least two mask layer regions are formed having different mask layer thicknesses; and applying an ion implantation process to the at least two mask layer regions to form at least two implanted regions in the carrier having different implantation depth profiles.
Type:
Grant
Filed:
March 2, 2017
Date of Patent:
March 26, 2019
Assignee:
Infineon Technologies AG
Inventors:
Jens Schneider, Henning Feick, Marcel Heller, Dieter Kaiser
Abstract: A semiconductor package includes a first semiconductor module including a plurality of semiconductor transistor chips and a first encapsulation layer disposed above the semiconductor transistor chips, and a second semiconductor module disposed above the first semiconductor module. The second semiconductor module includes a plurality of semiconductor driver channels and a second encapsulation layer disposed above the semiconductor driver channels. The semiconductor driver channels are configured to drive the semiconductor transistor chips.
Type:
Grant
Filed:
November 12, 2013
Date of Patent:
March 26, 2019
Assignee:
Infineon Technologies AG
Inventors:
Olaf Hohlfeld, Juergen Hoegerl, Angela Kessler, Magdalena Hoier
Abstract: In an embodiment, a semiconductor device includes a semiconductor substrate having a front surface, a LDMOS transistor arranged in the front surface of the substrate and having an intrinsic source, and a through substrate via. A first conductive layer lines sidewalls of the through substrate via and extends from the through substrate via onto the front surface of the semiconductor substrate and is electrically coupled with the intrinsic source.
Type:
Grant
Filed:
June 24, 2016
Date of Patent:
March 26, 2019
Assignee:
Infineon Technologies AG
Inventors:
Albert Birner, Helmut Brech, Matthias Zigldrum
Abstract: A magnetic sensor device for determining a rotation speed, a direction of rotation, and/or a rotation angle of a magnetic component rotating about a rotation axis is provided. The magnetic sensor device includes a magnet being rotationally symmetrical with respect to a symmetry axis, wherein a recess is formed within the magnet along the symmetry axis. Further, the magnetic sensor device includes a first magnetic sensor element arranged within the recess and on the symmetry axis, and a second magnetic sensor element arranged within the recess and on the symmetry axis. The magnetic sensor device additionally includes an integrated circuit arranged within the recess and configured to determine the rotation speed, the direction of rotation, and/or the rotation angle of the magnetic component based on a first output signal of the first magnetic sensor element and a second output signal of the second magnetic sensor element.
Abstract: A semiconductor chip with different chip pads and a method for forming a semiconductor chip with different chip pads are disclosed. In some embodiments, the method comprises depositing a barrier layer over a chip front side, depositing a copper layer after depositing the barrier layer, and removing a part of the copper layer located outside a first chip pad region, wherein a remaining portion of the copper layer within the first chip pad region forms a surface layer of the chip pad. The method further comprises removing a part of the barrier layer located outside the first chip pad region.
Abstract: A booster antenna structure for a chip card. The booster antenna structure includes a first electrical circuit, which forms a first resonant circuit, a second electrical circuit which forms a second resonant circuit, and a parallel coupling between the first electrical circuit and the second electrical circuit. The booster antenna structure is formed of a single wire.
Type:
Grant
Filed:
December 30, 2015
Date of Patent:
March 19, 2019
Assignee:
INFINEON TECHNOLOGIES AG
Inventors:
Walther Pachler, Stephan Rampetzreiter, Harald Witschnig
Abstract: A digital loudspeaker includes a substrate, a first stator fixed with respect to the substrate, a second stator fixed with respect to the substrate and spaced at a distance from the first stator, and a membrane between the first stator and the second stator. The membrane is displaceable between a first position in which the membrane mechanically contacts the first stator and a second position in which the membrane mechanically contacts the second stator. The first stator and the second stator are arranged to electrostatically move the membrane from a rest position spaced apart from the first position and the second position to the first position and the second position, respectively.
Abstract: A method for determining an error vector for a data word according to a Reed-Muller Code includes determining the syndrome of the error vector according to the Reed-Muller Code, expanding the syndrome with zeroes to 1 bit length less than the length of the Reed-Muller Code, determining a code word of a Simplex Code of 1 bit length less than the length of the Reed-Muller Code whose difference to the expanded syndrome has a weight below a first threshold or equal to or above a second threshold, expanding the difference between the determined code word and the expanded syndrome by a zero, and outputting the expanded difference as error vector if its weight is below the first threshold or outputting the inverted expanded difference as error vector if the weight of the expanded difference is equal to or above the second threshold.
Abstract: A method is suggested for determining a state of a memory cell via a sense amplifier the method including applying a first signal to the sense amplifier; sensing a first response; determining a reference signal based on the first signal; sensing a second response based on a second signal that is determined based on the first signal; and determining the state of the memory cell based on the second response and the reference signal. Also, a memory device that is able to determine the state of the memory cell is provided.
Type:
Grant
Filed:
May 17, 2017
Date of Patent:
March 19, 2019
Assignee:
Infineon Technologies AG
Inventors:
Mihail Jefremow, Thomas Kern, Christian Peters
Abstract: A timer including a Pulse Width Modulation (PWM) signal generator configured to generate, based on a clock, a PWM signal having a first frequency resolution; a PWM time shifter configured to receive from the PWM signal generator the PWM signal having the first frequency resolution, and output a PWM signal having a second frequency resolution, wherein the second frequency resolution is higher than the first frequency resolution; and a control monitor configured to: control the PWM time shifter to time shift rising edges or falling edges of the PWM signal by an amount corresponding with a second frequency resolution.
Abstract: A device for thermal protection is described. The device may be configured to determine current temperature information for a set of light emitting diodes (LEDs), receive an indication of a requested light pattern for the set of LEDs, and determine predicted temperature information for the set of LEDs based on the current temperature information and the requested light pattern. In this example, the device is further configured to operate the set of LEDs at a modified light pattern that is different from the requested light pattern in response to determining that the predicted temperature information indicates that the set of LEDs operates at an unsafe temperature when operating at the requested light pattern.
Type:
Grant
Filed:
December 23, 2016
Date of Patent:
March 19, 2019
Assignee:
Infineon Technologies AG
Inventors:
Georg Pelz, Cristian Mihai Boianceanu, Jerome Kirscher, Monica Rafaila
Abstract: An RF package includes a metal flange, an RF input lead, an RF output lead, and an electrically conductive die attach area. An RF transistor that is configured to amplify an RF signal is mounted in the die attach area. The RF transistor includes an input terminal that is electrically coupled to the RF input lead, an output terminal that is electrically coupled to the RF output lead, and a reference potential terminal that is electrically connected to the die attach area. A first capacitor having one or more upper metal plates, and a dielectric region is mounted in the die attach area and is electrically coupled to the RF transmission path of the RF signal. The first capacitor is configured to simultaneously match an impedance of the RF transistor at a fundamental frequency of the RF signal and to filter a higher order harmonic of the fundamental frequency.
Type:
Grant
Filed:
August 2, 2017
Date of Patent:
March 19, 2019
Assignee:
Infineon Technologies AG
Inventors:
Bayaner Arigong, Richard Wilson, Haedong Jang, Frank Trang, Timothy Canning, Rongguo Zhou, Bjoern Herrmann
Abstract: A switched-capacitor circuit is described herein. In accordance with one exemplary embodiment the switched-capacitor circuit includes a first input node and a second input node and an input switch unit. The input switch is connected to the first input node and the second input node and has a first output node and a second output node. A first capacitor is coupled to the first output node of the input switch unit, and a second capacitor is coupled to the second output node of the input switch unit. The input switch unit includes a plurality of switches configured to con-nect and disconnect one of the first and second input nodes and one of the first capacitor and the second capacitor. The input switch unit further includes a first charge pump coupled to the first input node and a second charge pump coupled to the second input node.
Abstract: The semiconductor processing system includes a reactor chamber that has an upper wall and a lower wall. A hold member is disposed in the reactor chamber to hold a semiconductor substrate in such a way that it faces the lower wall of the reactor chamber.
Abstract: An imaging device includes an image sensor circuit including a pixel element. The pixel element is configured to receive during a first receiving time interval electromagnetic waves having a first wavelength, and to receive during a subsequent second receiving time interval electromagnetic waves having a second wavelength. The imaging device includes an image processing circuit configured to produce a color image of the object based on a first pixel image data and a second pixel image data. The first pixel image data is based on the electromagnetic waves having the first wavelength received by the pixel element during the first receiving time interval. The second pixel image data is based on the electromagnetic waves having the second wavelength received by the pixel element during the second receiving time interval.
Abstract: A chip having a substrate region having a substrate contact, an RS latch having two complementary nodes representing a storage state of the RS latch, a control circuit having a control input and configured to connect one of the complementary nodes to a supply potential depending on a potential at the control input, wherein the control input is connected to the substrate contact, and an output circuit connected to an output of the RS latch and configured to trigger an alarm depending on the storage state of the RS latch.
Abstract: Devices and methods are provided which facilitate detecting of a disturbance parameter being outside a predetermined range. Such disturbance parameter may for example cause dependent failures in redundant circuits, for example redundant circuits being arranged on a same substrate.
Abstract: A method includes post processing a plurality of temperature sensors grouped into a plurality of sets. For each set of the plurality of sets, a post-processing system coupled to corresponding temperature sensors receives a plurality output signals generated by the corresponding temperature sensors. For each set of the plurality of sets, the post-processing system computes values representing proportional to absolute temperature (PTAT) voltages and values representing internal reference voltages based on output signals generated by the corresponding temperature sensors. For each set of the plurality of sets, the post-processing system computes an average of the values representing the PTAT voltages and relative PTAT voltage variation coefficients. For each set of the plurality of sets, the post-processing system computes values representing corrected PTAT voltages using the relative PTAT voltage variation coefficients.
Type:
Grant
Filed:
May 12, 2016
Date of Patent:
March 12, 2019
Assignee:
INFINEON TECHNOLOGIES AG
Inventors:
Elmar Bach, Patrizia Greco, Andreas Wiesbauer, Kwan Siong Kenneth Choong, Michael Staber
Abstract: Various devices, systems and methods are disclosed where a noise signal component of a sensor signal is used to obtain information about a sensor device. A device may include an evaluation circuit that is configured to receive a sensor signal having a noise signal component, and the evaluation circuit is further configured to evaluate the noise signal component to obtain information about a sensor device generating the sensor signal.
Type:
Grant
Filed:
July 25, 2016
Date of Patent:
March 12, 2019
Assignee:
Infineon Technologies AG
Inventors:
Thomas Zettler, Dirk Hammerschmidt, Friedrich Rasbornig, Wolfgang Scheibenzuber, Wolfgang Scherr