Abstract: It is suggested to process radar signals including: (i) receiving reception signals via at least one antenna of a first receiving circuit; (ii) determining an interim result by processing the reception signals via a frequency transformation; (iii) determining an error compensation vector based on the interim result and an expected characteristic; and (iv) applying the error compensation vector on other reception signals that have been processed via the frequency transformation.

Abstract: A method and slave devices are disclosed in which an address assignment to slave devices takes place with the aid of a collision detection. The slave device receives an initialization signal, transmits an identifier over a bus in response to the initialization signal, checks whether a collision occurs on the bus when transmitting the identifier, and if a collision occurs, places the slave device into an inactive state, and if no collision occurs, receives an address for the slave device after the transmission of the identifier.

Abstract: A semiconductor package includes an encapsulant body; a first electrically conductive element having an outwardly exposed metal surface; a first carrier substrate having a first electrically conductive layer, a second electrically conductive layer having an outwardly exposed surface, and an electrical insulation layer; a first electrically conductive spacer between the first electrically conductive element and the first electrically conductive layer; a power semiconductor chip between the first electrically conductive element and the first electrically conductive layer; and a second electrically conductive spacer between the first electrically conductive element and the power semiconductor chip, a first carrier region of the first electrically conductive layer is connected to a first power terminal, a second carrier region of the first electrically conductive layer is alongside the first carrier region and is connected to a second power terminal, a first region of the first electrically conductive element is

Abstract: In accordance with an embodiment, a method of operating a radar system includes receiving radar configuration data from a host, and receiving a start command from the host after receiving the radar configuration data. The radar configuration data includes chirp parameters and frame sequence settings. After receiving the start command, configuring a frequency generation circuit is configured with the chirp parameters and radar frames are triggered at a preselected rate.

Abstract: A silicon carbide device includes: a transistor cell having a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; at least one source region of a first conductivity type in contact with the first gate sidewall; and a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. No source regions of the first conductivity type are in contact with a second gate sidewall of the gate structure.

Abstract: A semiconductor device is disclosed. In one example, the semiconductor device includes an encapsulation material at least partially encapsulating a semiconductor component of the semiconductor device. The semiconductor device further includes a first lead protruding out of a first side surface of the encapsulation material and a second lead protruding out of a second side surface of the encapsulation material opposite to the first side surface. The first lead includes a first notch aligned with the first side surface of the encapsulation material. The first notch faces away from a further lead protruding out of the first side surface of the encapsulation material.

Abstract: An electronic device is disclosed. In one example, the electronic device comprises a laminate carrier comprising a plurality of laminated layers, an electronic component embedded in the laminate carrier, and an at least partially electrically conductive pin extending partially inside the laminate carrier and partially protruding beyond the laminate carrier. The pin is electrically coupled with the electronic component.

Abstract: A semiconductor device is disclosed. In one example, the semiconductor device includes a leadframe for flip chip attaching a semiconductor die thereon that comprises a rectangular area segmented into individual pads. The individual pads comprise a first pad, a second pad, and a third pad, wherein the first pad is larger than the second pad and larger than the third pad. The second pad is located in a first corner area of the rectangular area and the third pad is located in a second corner area of the rectangular area. The second corner area is located diagonally opposite to the first corner area.

Abstract: A solder material is provided. In one or more examples, the solder material may include metal solder particles, a carboxylic acid, and an alcohol selected from the group consisting of methanol, ethanol, propan-1-ol, propan-2-ol, 2-methyl-1-propanol, butan-1-ol, pentan-1-ol, 1,2-propanediol, 1,3-propanediol, and glycerol.

Abstract: A device for forming a housing for a power semiconductor module arrangement includes a mold. The mold includes a first cavity including a plurality of first openings and a second opening, the second opening being coupled to a runner system, wherein the runner system is configured to inject a mold material into the first cavity through the second opening. The device further includes a plurality of sleeves or hollow bushings, wherein a first end of each of the plurality of sleeves or hollow bushings is arranged in one of the first openings, and wherein a second end of each of the plurality of sleeves or hollow bushings extends to the outside of the mold, a heating element configured to heat the mold, and a cooling element configured to cool the plurality of sleeves or hollow bushings.

Abstract: A semiconductor package is provided. The semiconductor package may include at least one semiconductor chip including a contact pad configured to conduct a current, a conductor element, wherein the conductor element is arranged laterally overlapping the contact pad and with a distance to the contact pad, at least one electrically conductive spacer, a first adhesive system configured to electrically and mechanically connect the at least one electrically conductive spacer with the contact pad, and a second adhesive system configured to electrically and mechanically connect the at least one electrically conductive spacer with the conductor element, wherein the conductor element is electrically conductively connected to a clip or is at least part of a clip, and wherein the spacer is configured to electrically conductively connect the contact pad with the laterally overlapping portion of the conductor element.

Abstract: An encapsulant for an electronic package is disclosed. In one example, the encapsulant comprises an electrically insulating matrix material, and a porous colorant in the matrix material.

Abstract: In an embodiment, a method includes: receiving raw data from a millimeter-wave radar sensor; generating a first radar-Doppler image based on the raw data; generating a first radar point cloud based on the first radar-Doppler image; using a graph encoder to generate a first graph representation vector indicative of one or more relationships between two or more parts of the target based on the first radar point cloud; generating a first cadence velocity diagram indicative of a periodicity of movement of one or more parts of the target based on the first radar-Doppler image; and classifying an activity of a target based on the first graph representation vector and the first cadence velocity diagram.

Abstract: An ESD protection device includes a semiconductor body having an upper surface, a plurality of p-type wells that each extend from the upper surface into the semiconductor body, and a plurality of n-type wells that each extend from the upper surface into the semiconductor body, wherein a total area of electrical insulator disposed between the p-type wells and the adjacent semiconductor body is greater than a total area of electrical insulator disposed between the n-type wells and the adjacent semiconductor body.

Abstract: A circuit includes one or more datastores configured to store a result register and a readout counter value and logic circuitry coupled to the one or more datastores. The logic circuitry is configured to cause, for a cycle of a plurality of cycles of a periodic signal, one or more analog-to-digital converters (ADCs) to store data to the result register and modify the readout counter value in response to the one or more ADCs storing the data to the result register for the cycle. In response to a read request for the data at the result register for the cycle, the logic circuitry is configured to output the data stored by the result register, output the readout counter value for the cycle, and, after the output of the readout counter value, set the readout counter value to a predetermined value.

Abstract: In some examples, a method of operating a circuit is described. The method may include performing a circuit function and estimating a probability of failure of the circuit based on one or more stress origination metrics, one or more stress victim events, and one or more initial state conditions.

Abstract: An apparatus comprises a power module housing. The power module housing includes a conductive substrate and a circuit board positioned overlying the conductive substrate. A gate driver is mounted to the circuit board. A power device is mounted to the conductive substrate and is controlled by the gate driver. The power module housing includes an insulation material electrically insulating the conductive substrate from the circuit board. A monitoring component is mounted to at least the conductive substrate and is operatively coupled to the gate driver and the power device.

Abstract: A method of forming a semiconductor package includes producing a package substrate that includes an interior laminate layer, a first metallization layer disposed below the interior laminate layer, and a second metallization layer disposed above the interior laminate layer, providing a first load terminal on a first surface of the first semiconductor die and a second load terminal on a second surface of the first semiconductor die; and a liner of dielectric material on the first semiconductor die; providing a liner of dielectric material on the first semiconductor die; embedding the first semiconductor die within the interior laminate layer such that the first surface of the first semiconductor die faces the second metallization layer, and wherein the liner of dielectric material is disposed on a corner of the first semiconductor die that is between the first and second load terminals of the first semiconductor die.

Abstract: A semiconductor device includes: a drift region of a first conductivity type in a semiconductor body having a first main surface; a body region of a second conductivity type between the drift region and the first main surface; and trenches extending into the semiconductor body from the first main surface and patterning the semiconductor body into mesas. The trenches include: a first trench having first and second electrodes that face one another along a lateral direction, and a dielectric arranged between the first and second electrodes; a second trench having first and second electrodes that face one another along a lateral direction, and a dielectric arranged between the first and second electrodes; and a third trench having first and second electrodes that face one another along a lateral direction, and a dielectric arranged between the first and second electrodes. Additional semiconductor device embodiments are described herein.

Abstract: An electronic device with a multi-layer contact and a system is disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate having a first electrode terminal located on a first surface and a second surface electrode terminal located on a second surface, the first surface being opposite to the second surface, an electrical contact layer disposed directly on the first electrode terminal, a functional layer directly disposed on the electrical contact layer, an adhesion layer directly disposed on the functional layer, a solder layer directly disposed on the adhesion layer; and a protection layer directly disposed on the solder layer, wherein the semiconductor device is a power semiconductor device configured to provide a vertical current flow.