Abstract: A method for fabricating packaged semiconductor devices is disclosed. In one example the method comprises providing a plurality of semiconductor dies, the semiconductor dies being arranged in an array on a carrier such that a first side of the semiconductor dies faces the carrier and such that an empty space is arranged laterally besides each semiconductor die. A substrate comprising a plurality of conductive elements is arranged over the plurality of semiconductor dies such that a conductive element is arranged in the respective empty space besides each one of the semiconductor dies. The plurality of semiconductor dies are molded over to form a molded body, and singulating packaged semiconductor devices from the molded body by cutting through the molded body.

Abstract: A method of manufacturing a photodetector device is provided. The method includes providing a photodetector array comprising an array of photodetectors and a plurality of metal structures arranged laterally between photodetectors of the array of photodetectors, wherein the photodetectors are co-planar with the plurality of metal structures, and wherein the plurality of metal structures are arranged in a first pattern; applying an antireflective coating to a surface of a transparent substrate, the antireflective coating being patterned according to a second pattern that matches the first pattern; aligning the transparent substrate over the photodetector array such that the first pattern is aligned with the second pattern; and coupling the transparent substrate to the photodetector array such that the antireflective coating covers the plurality of metal structures.

Abstract: A device includes at least one layer stack including a ferromagnetic layer, at least one magnetic reference layer, and a layer arranged therebetween having a magnetic tunnel junction. The at least one magnetic reference layer has a fixed first magnetization direction, and the ferromagnetic layer has a variable second magnetization direction that is variable relative to the first magnetization direction based on a spin orbit torque effect. The device further includes a spin orbit torque conductor arranged on a first side of the layer stack adjacent to the ferromagnetic layer, and a control unit configured to provide the spin orbit torque conductor with a time-variant input signal with temporally varying polarity and at the same time to determine a conductance of the tunnel junction dependent on the time-variant input signal and, based on the conductance, to detect a magnetic field acting on the device externally.

Abstract: An oscillator system includes a transmitter configured to transmit a frequency modulated continuous wave (FMCW) light beam along a transmission path, where the FMCW light beam includes a plurality of wavelength ramps and a wavelength of the FMCW light beam continuously varies over time; an oscillator structure configured to oscillate about a scanning axis based on a deflection angle of the oscillator structure that continuously varies over time; and a dispersive element arranged in the transmission path and configured to receive the FMCW light beam and output a compensated FMCW light beam along the transmission path, where the dispersive element is configured to compensate for a propagation direction disturbance caused by an oscillation of the oscillator structure. The oscillator structure is arranged in the transmission path and is configured to direct the FMCW light beam or the compensated FMCW light beam towards an output of the transmission path.

Abstract: A method of monitoring a microelectromechanical systems (MEMS) oscillating structure includes: driving the MEMS oscillating structure configured to oscillate about a rotation axis according to an operating response curve during which the MEMS oscillating structure is in resonance, wherein the MEMS oscillating structure is a non-linear resonator; inducing an oscillation decay of the MEMS oscillating structure at predefined tilt angle such that an oscillation of the MEMS oscillating structure decays from the predefined tilt angle over a decay period; measuring at least one characteristic of the oscillation decay; and determining a mechanical health of the MEMS oscillating structure based on the at least one characteristic of the oscillation decay.

Abstract: A method includes producing a semiconductor wafer. The semiconductor wafer includes a plurality of microelectromechanical system (MEMS) semiconductor chips, wherein the MEMS semiconductor chips have MEMS structures arranged at a first main surface of the semiconductor wafer, a first semiconductor material layer arranged at the first main surface, and a second semiconductor material layer arranged under the first semiconductor material layer, wherein a doping of the first semiconductor material layer is greater than a doping of the second semiconductor material layer. The method further includes removing the first semiconductor material layer in a region between adjacent MEMS semiconductor chips. The method further includes applying a stealth dicing process from the first main surface of the semiconductor wafer and between the adjacent MEMS semiconductor chips.

Abstract: A pressure sensor device includes a semiconductor die having a die surface that includes a pressure sensitive area; and a bond wire bonded to a first peripheral region of the die surface and extends over the die surface to a second peripheral region of the die surface, wherein the pressure sensitive area is interposed between the second peripheral region and the first peripheral region, wherein the bond wire comprises a crossing portion that overlaps an area of the die surface, and wherein the crossing portion extends over the pressure sensitive area that is interposed between the first and the second peripheral regions.

Abstract: A semiconductor device is described. In one embodiment, the device includes a Group-III nitride channel layer and a Group-III nitride barrier layer on the Group-III nitride channel layer, wherein the Group-III nitride barrier layer includes a first portion and a second portion, the first portion having a thickness less than the second portion. A p-doped Group-III nitride gate layer section is arranged at least on the first portion of the Group-III nitride barrier layer and a gate contact formed on the p-doped Group-III nitride gate layer.

Abstract: A radar system includes a first radar chip having one or more receiving channels and a second radar chip having one or more receiving channels, wherein the receiving channels of the first and second radar chips each have an RF input port and are configured to provide, based on an RF input signal received at the RF input port, a corresponding digital baseband signal that is characterizable by at least one signal parameter. The radar system further includes a power divider configured to forward an RF signal to both a first receiving channel integrated in the first radar chip and to a second receiving channel integrated in the second radar chip. A processor is configured to determine information indicating a deviation between the signal parameter of the digital baseband signal of the first receiving channel and the corresponding signal parameter of the digital baseband signal of the second receiving channel.

Abstract: A gate driver integrated circuit includes a high-side region that operates in a first voltage domain according to a first pair of supply terminals that include a first lower supply terminal and a first higher supply terminal; a low-side region that operates in a second voltage domain according to a second pair of supply terminals; a low-voltage region the operates in a third voltage domain; at least one termination region that electrically isolates the high-side region from the low-side region and the low-voltage region; a first electrostatic device arranged in the high-side region and connected to the first pair of supply terminals; a second electrostatic device arranged in the low-side region and connected to the second pair of supply terminals; and a third electrostatic device connected to a lower supply terminal of the first pair of supply terminals and is coupled in series with the first electrostatic device.

Abstract: A power relay circuit for switching a load current includes a micro-electro-mechanical system (MEMS) switch and a semiconductor power switch. The MEMS switch and the semiconductor power switch are connected in series with the load current.

Abstract: A device for suppressing stray radiation includes a Micro-ElectroMechanical System (MEMS) sensor module and a conductive cage structure. The conductive cage structure may enclose the MEMS sensor module in order to suppress penetration of stray electromagnetic radiation with a stray wavelength ?o into the conductive cage structure, and the conductive cage structure may be arranged to be thermally insulated from the MEMS sensor module. The device may also include a connecting line. The connecting line may be connected to the MEMS sensor module and fed through the conductive cage structure by a capacitive element.

Abstract: A gate driver system includes a gate driver having a first input for receiving a digital input signal, a second input for receiving a short circuit protection signal, and output for driving a power device; a current reconstruction circuit having a first input for receiving a voltage across an inductance associated with the power device, a second input for receiving a current associated with the power device, a third input for receiving the digital input signal, and an output for providing a sensed power device current; and a comparator having a first input coupled to the output of the current reconstruction circuit, a second input coupled to a reference, and an output coupled to the second input of the gate driver.

Abstract: An RF switch includes serially coupled RF cells coupled between a first switch node and a second switch node, wherein each of the serially coupled RF cells include at least one transistor; and a varactor circuit coupled to at least one node of a transistor in an RF cell, and coupled between the RF cell and an adjacent RF cell, wherein the varactor circuit is configured for equalizing a voltage of the RF cell and a voltage of the adjacent RF cell during an off mode of the RF switch.

Abstract: Power converters are provided. A capacitor is coupled to a primary winding of a transformer forming part of an LC resonator. The capacitor is coupled with a supply voltage input (Vcc) of a controller to supply at least part of the controller with power.

Abstract: According to an embodiment of a method described herein, a silicon carbide substrate is provided that includes a plurality of device regions. A front side metallization may be provided at a front side of the silicon carbide substrate. The method may further comprise providing an auxiliary structure at a backside of the silicon carbide substrate. The auxiliary structure includes a plurality of laterally separated metal portions. Each metal portion is in contact with one device region of the plurality of device regions.

Abstract: Current measurement device and methods are provided. An output signal is provided based on a voltage across a resistive element. A correction circuit is configured to estimate an indication of a temperature change of the resistive element based on the voltage across the resistive element and to correct the output of the current measurement device based on the indication of the temperature change and a measured temperature.

Abstract: A photoacoustic gas sensor includes a hermetically sealed housing filled with a reference gas. The photoacoustic gas sensor furthermore includes a microphone arranged in the housing and configured to generate a microphone signal as a function of a sound wave based on light incident in the housing. Furthermore, the photoacoustic gas sensor includes a controllable heat source arranged in the housing and configured to selectively thermoacoustically excite the reference gas in order to generate a thermoacoustic sound wave phase-shifted with respect to the sound wave.

Abstract: In some examples, a device includes a built-in self-test for detecting a fault on a light emitting diode (LED) or on a driver for an LED. The device includes a pair of pads that are configured to connect to the LED. The built-in self-test is configured to control the driver to turn on a respective pass switch connected to a pad of the pair of pads. The built-in self-test is configured to then determine a voltage level at each pad of the pair of pads. The built-in self-test can determine whether the fault exists on the LED, across the first anode pad and the first cathode pad, or on the driver based on the voltage level at each pad.

Abstract: A system includes an analog-to-digital converter (ADC) and a digital modulator coupled to the ADC, wherein the digital modulator comprises an output for providing a digital signal, wherein the digital modulator comprises a main signal path and a feedback path, and wherein the feedback path comprises a first digital gain stage having a first adjustable gain range.