Patents Assigned to INFINEON
  • Patent number: 11105776
    Abstract: A detector module is disclosed. In one example, the detector module is for a photo-acoustic gas sensor and comprises a first substrate made of a semiconductor material and comprising a first surface and a second surface opposite to the first surface, a second substrate comprising a third surface, a fourth surface opposite to the third surface, and a first recess formed in the fourth surface. The second substrate is connected with its fourth surface to the first substrate so that the first recess forms an airtight-closed first cell which is filled with a reference gas and a pressure sensitive element comprising a membrane disposed in contact with the reference gas. The detector module is further configured such that a beam of light pulses passes through the first substrate and thereby enters the first cell.
    Type: Grant
    Filed: August 7, 2019
    Date of Patent: August 31, 2021
    Assignee: Infineon Technologies AG
    Inventors: Horst Theuss, Rainer Markus Schaller
  • Patent number: 11107739
    Abstract: A power semiconductor module arrangement includes a first switching element and a second switching element, each having a control terminal and a controllable load path between two load terminals, the load paths being operatively coupled in series and between a first supply node, and a second supply node. The switching elements are connected with each other via a first common node. An output node configured to be coupled to an output potential is coupled to the first common node. The first supply node is formed by a plurality of first terminals, the second supply node is formed by a plurality of second terminals, and the output node is formed by a plurality of third terminals. The switching elements are arranged inside a housing.
    Type: Grant
    Filed: May 5, 2020
    Date of Patent: August 31, 2021
    Assignee: Infineon Technologies AG
    Inventor: Alexander Hoehn
  • Patent number: 11107754
    Abstract: An electronic device and method is disclosed. In one example, the electronic device includes a semiconductor chip and a leadframe. The leadframe includes a first class of leads and a second class of leads. The leads of the second class of leads are thinner than leads of the first class of leads.
    Type: Grant
    Filed: June 13, 2018
    Date of Patent: August 31, 2021
    Assignee: Infineon Technologies AG
    Inventors: Jia Yi Wong, Kar Meng Ho
  • Patent number: 11105760
    Abstract: A fluid sensor comprises a sensor material configured to come into contact at a surface region of same with a fluid and to obtain a first temporal change of a resistance value of the sensor material on the basis of the contact in a first sensor configuration and to obtain a second temporal change of the resistance value of the sensor material on the basis of the contact in a second sensor configuration. The fluid sensor comprises an output element configured to provide a sensor signal on the basis of the first and second temporal change of the resistance value.
    Type: Grant
    Filed: April 9, 2018
    Date of Patent: August 31, 2021
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Matthias Koenig, Guenther Ruhl
  • Publication number: 20210262832
    Abstract: A magnetic sensor device includes a three-dimensional (3D) magnetic sensor and a magnet that produces a magnetic field. The 3D magnetic sensor is arranged within the magnetic field and is configured to measure three different magnetic field components of the magnetic field and generate sensor signals in response to the measured three different magnetic field components. The magnet is arranged in a default spatial position in an absence of any applied spatial force, where the magnet is configured to rotate about a rotation axis based on an applied rotational force. The magnetic field varies inhomogeneously with regards to at least one of the three magnetic field components upon rotation of the magnet about the rotation axis.
    Type: Application
    Filed: February 26, 2020
    Publication date: August 26, 2021
    Applicant: Infineon Technologies AG
    Inventor: Richard HEINZ
  • Publication number: 20210263079
    Abstract: A current sensor arrangement includes a first conductor configured to conduct a first portion of a primary current in a current flow direction; a second conductor configured to conduct a second portion of the primary current in the current flow direction; and a magnetic sensor. The first and second conductor are coupled in parallel. The first current produces a first magnetic field as it flows through the first conductor and the second current produces a second magnetic field as it flows through the second conductor. The first conductor and the second conductor are separated from each other in a first direction that is orthogonal to the current flow direction, thereby defining a gap. The magnetic sensor is arranged in the gap such that the first conductor is arranged over a first portion of the magnetic sensor and the second conductor is arranged under a second portion of the magnetic sensor.
    Type: Application
    Filed: February 25, 2020
    Publication date: August 26, 2021
    Applicant: Infineon Technologies AG
    Inventors: Guenter SCHWARZBERGER, Sebastian MAERZ, Wolfgang RABERG
  • Patent number: 11099213
    Abstract: A readout circuit for resistive and capacitive sensors includes a first input coupled to a reference resistor in a first mode of operation and coupled to a resistive sensor in a second mode of operation; a second input coupled to a capacitive sensor in the first mode of operation and coupled to a reference capacitor in the second mode of operation; and an output for providing a capacitive sensor data stream in the first mode of operation and for providing a resistive sensor data stream in the second mode of operation.
    Type: Grant
    Filed: October 20, 2017
    Date of Patent: August 24, 2021
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Richard Gaggl, Andrea Baschirotto, Cesare Buffa, Fulvio Ciciotti
  • Patent number: 11101201
    Abstract: A molded semiconductor package includes a mold compound, a plurality of leads each having a first end embedded in the mold compound and a second end protruding from a side face of the mold compound, and a semiconductor die embedded in the mold compound and electrically connected, within the mold compound, to the plurality of leads. The second end of each lead of the plurality of leads has a bottom surface facing in a same direction as a bottom main surface of the mold compound. The bottom surface of each lead of the plurality of leads is coplanar with the bottom main surface of the mold compound or disposed in a plane above the bottom main surface of the mold compound so that no lead of the plurality of leads extends below the bottom main surface of the mold compound.
    Type: Grant
    Filed: March 1, 2019
    Date of Patent: August 24, 2021
    Assignee: Infineon Technologies AG
    Inventors: Thomas Stoek, Dirk Ahlers, Stefan Macheiner
  • Patent number: 11099256
    Abstract: A device for processing radar signals is suggested, the device comprising: (i) a memory, which is arranged to store radar data and (ii) an accessor comprising a DMA engine, wherein the accessor is arranged to access data of the memory via the DMA engine, to filter the accessed data, and to forward the filtered data.
    Type: Grant
    Filed: June 6, 2018
    Date of Patent: August 24, 2021
    Assignee: Infineon Technologies AG
    Inventors: Andre Roger, Christian Schmid, Romain Ygnace
  • Patent number: 11102574
    Abstract: A MEMS microphone module includes a MEMS microphone, a modulator connected downstream of the MEMS microphone, and an interference compensation circuit to apply an interference compensation signal to an input of the modulator, the interference compensation signal being opposed to a low-frequency signal interference present at the input of the modulator or a block connected upstream of the input of the modulator.
    Type: Grant
    Filed: March 8, 2019
    Date of Patent: August 24, 2021
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Dietmar Straeussnigg, Elmar Bach
  • Patent number: 11101343
    Abstract: A semiconductor component has a gate structure that extends from a first surface into an SiC semiconductor body. A body area in the SiC semiconductor body adjoins a first side wall of the gate structure. A first shielding area and a second shielding area of the conductivity type of the body area have at least twice as high a level of doping as the body area. A diode area forms a Schottky contact with a load electrode between the first shielding area and the second shielding area.
    Type: Grant
    Filed: May 6, 2019
    Date of Patent: August 24, 2021
    Assignee: Infineon Technologies AG
    Inventors: Ralf Siemieniec, Thomas Aichinger, Thomas Basler, Wolfgang Bergner, Rudolf Elpelt, Romain Esteve, Michael Hell, Daniel Kueck, Caspar Leendertz, Dethard Peters, Hans-Joachim Schulze
  • Patent number: 11096578
    Abstract: A device includes an overlay mechanism, system with devices each including an overlay mechanism with an individually programmable delay or method for overlaying data. A method for overlaying data includes redirecting an access which is directed to a first memory location to a second memory location. The method for overlaying data selectively delays access to the second memory location in case of a redirection by a time.
    Type: Grant
    Filed: May 15, 2020
    Date of Patent: August 24, 2021
    Assignee: Infineon Technologies AG
    Inventor: Neil Stuart Hastie
  • Patent number: 11101221
    Abstract: Input/output pins for a chip-embedded substrate may be fabricated by applying a contact-distinct volume of solder to at least two contacts that are recessed within the chip-embedded substrate, temperature-cycling the chip-embedded substrate to induce solder reflow and define an input/output pin for each one of the at least two contacts, and machining the input/output pin for each one of the at least two contacts to extend exposed from the chip-embedded substrate to a common height within specification tolerance. Such a technique represents a paradigm shift in that the manufacturer of the chip-embedded substrate, as opposed to the immediate customer of the manufacturer, may assume the burden of quality control with respect to minimizing unintended solder void trapping under the input/output pins, thereby reinforcing existing customer loyalty and potentially attracting new customers.
    Type: Grant
    Filed: April 11, 2018
    Date of Patent: August 24, 2021
    Assignee: Infineon Technologies Americas Corp.
    Inventors: Eung San Cho, Danny Clavette
  • Publication number: 20210255651
    Abstract: An integrated circuit includes a first bandgap voltage reference sub-circuit configured to provide a first bandgap reference voltage; a second bandgap voltage reference sub-circuit configured to provide a second bandgap reference voltage; a voltage regulator sub-circuit configured to derive a first supply voltage using the first bandgap reference voltage and a second supply voltage using the second bandgap reference voltage; a bandgap comparator sub-circuit configured to derive a first internal voltage and a second internal voltage from the first supply voltage, wherein the first internal voltage decreases at a higher rate than the second internal voltage with respect to a decreasing first supply voltage, wherein the bandgap comparator sub-circuit is configured indicate which of the first and the second internal voltages is larger; and a comparator sub-circuit configured to indicate whether a difference between the first supply voltage and the second supply voltage is larger than a predefined threshold.
    Type: Application
    Filed: May 3, 2021
    Publication date: August 19, 2021
    Applicant: Infineon Technologies AG
    Inventors: Mario MOTZ, Umberto ARACRI, Alessandro MICHELUTTI
  • Publication number: 20210257925
    Abstract: A power module is provided that is configured to supply power to a load. The power module includes a current generator configured to generate a current; a current rail configured to receive the current and output the current from the power module, wherein the current rail includes a first opening formed therethrough, and the current, while flowing along the current rail in an output direction, flows around the first opening; and a housing that houses the current generator, wherein the housing includes an outer frame from which the current rail outwardly extends, wherein the outer frame includes a recess aligned with the first opening of the current rail such that the recess and the first opening form a unitary opening.
    Type: Application
    Filed: May 5, 2021
    Publication date: August 19, 2021
    Applicant: Infineon Technologies AG
    Inventors: Leo AICHRIEDLER, Gerald WRIESSNEGGER
  • Publication number: 20210255255
    Abstract: A method for generating a closed flux magnetization pattern of a predetermined rotational direction in a magnetic reference layer of a magnetic layer stack is provided. The method includes applying an external magnetic field in a predetermined direction to the magnetic layer stack causing magnetic saturation of the magnetic reference layer and of a pinned layer of the magnetic layer stack; and reducing the external magnetic field to form a first closed flux magnetization pattern in the magnetic reference layer and a second closed flux magnetization pattern in the pinned layer.
    Type: Application
    Filed: May 3, 2021
    Publication date: August 19, 2021
    Applicant: Infineon Technologies AG
    Inventors: Dirk HAMMERSCHMIDT, Armin SATZ, Juergen ZIMMER
  • Patent number: 11092643
    Abstract: A test assembly for testing an antenna-in-package (AiP) device includes a socket over a circuit board, where the socket includes an opening for receiving the AiP device; a plunger configured to move along sidewalls of the opening, where during testing of the AiP device, the plunger is configured to cause the AiP device to be pressed towards the circuit board such that the AiP device is operatively coupled to the circuit board via input/output connections of the AiP device and of the circuit board; and a loadboard disposed within the socket and between the plunger and the AiP device, where the loadboard includes a coupling structure configured to be electromagnetically coupled to a transmit antenna and to a receive antenna of the AiP device, so that testing signals transmitted by the transmit antenna are conveyed to the receive antenna externally relative to the AiP device through the coupling structure.
    Type: Grant
    Filed: July 31, 2019
    Date of Patent: August 17, 2021
    Assignee: Infineon Technologies AG
    Inventors: Saverio Trotta, Ashutosh Baheti, Reinhard-Wolfgang Jungmaier, Dennis Noppeney
  • Patent number: 11092463
    Abstract: A magnetic angular position sensor system is described herein, which includes a shaft rotatable around a rotation axis, the shaft having a soft magnetic shaft end portion. The system further includes a sensor chip spaced apart from the shaft end portion in an axial direction and defining a sensor plane, which is substantially perpendicular to the rotation axis. At least four magnetic field sensor elements are integrated in the sensor chip, with two of the magnetic field sensor elements being spaced apart from each other and are sensitive to magnetic field components in a first direction and wherein two of the magnetic field sensor elements are spaced apart from each other and are only sensitive to magnetic field components in a second direction, whereby the first and the second direction are mutually non-parallel and the first and the second direction being perpendicular to the rotation axis.
    Type: Grant
    Filed: October 18, 2019
    Date of Patent: August 17, 2021
    Assignee: Infineon Technologies AG
    Inventor: Udo Ausserlechner
  • Patent number: 11093851
    Abstract: One or more failure regions are determined for an electrical device by training a machine learning classifier, including analyzing data points for the device and recognizing patterns in the data points. Each data point indicates pass or fail of the device for a particular combination of factors relating to the operation of the device. The trained machine learning classifier is used to predict the pass/fail state of new data points for the electrical device. Each new data point corresponds to a new combination of the factors relating to the operation of the device not previously analyzed by the machine learning classifier. A pass/fail border region can be identified for the electrical device based on the training of the machine learning classifier, the pass/fail border region excluding data points for which the electrical device is expected to pass or fail with a high degree of certainty.
    Type: Grant
    Filed: September 18, 2013
    Date of Patent: August 17, 2021
    Assignee: Infineon Technologies AG
    Inventor: Markus Dobler
  • Patent number: 11094619
    Abstract: A package and method of making a package. In one example, the package includes an at least partially electrically conductive carrier, a passive component mounted on the carrier, and an at least partially electrically conductive connection structure electrically connecting the carrier with the component and comprising spacer particles configured for spacing the carrier with regard to the component.
    Type: Grant
    Filed: October 8, 2019
    Date of Patent: August 17, 2021
    Assignee: Infineon Technologies AG
    Inventors: Manfred Schindler, Franz-Peter Kalz, Volker Strutz