Abstract: A signal processor including a Pulse Width Modulation (PWM) encoder configured to encode data into a data PWM pattern; and a block encoder coupled to the PWM encoder, and configured to determine a checksum of the data PWM pattern, wherein the PWM encoder is further configured to encode the checksum into a checksum PWM pattern, and append the checksum PWM pattern on the data PWM pattern for transmission as a PWM signal.

Abstract: A magnetic field sensor includes at least one magneto-resistive spin-valve sensor element configured to sense a first magnetic field component, and at least one AMR sensor element configured to sense a second magnetic field component which is perpendicular to the first magnetic field component.

Abstract: Method for manufacturing an electronic semiconductor package, in which method an electronic chip (100) is coupled to a carrier, the electronic chip is at least partially encapsulated by means of an encapsulation structure having a discontinuity, and the carrier is partially encapsulated, and at least one part of the discontinuity and a volume connected thereto adjoining an exposed surface section of the carrier are covered by an electrically insulating thermal interface structure, which electrically decouples at least one part of the carrier with respect to its surroundings.

Abstract: A method of operating a power switch driver circuit coupled to a power switch includes producing, by a controller of the power switch driver circuit, a first driving signal to a control terminal of the power switch to turn on the power switch; comparing, by a first comparator of the power switch driver circuit, a first voltage at the control terminal of the power switch with a first pre-determined threshold; and starting monitoring a desaturation condition of the power switch a pre-determined period of time after detecting that the first voltage is above the first pre-determined threshold, wherein monitoring the desaturation condition comprises monitoring a second voltage at a load path terminal of the power switch.

Abstract: A bi-directional LLC converter includes: first and second sides coupled by an isolation transformer, the first side including a switch network connected to an LLC network, the LLC network including a first winding of the isolation transformer, the second side including a switch network connected to a second winding of the isolation transformer; and a controller operable to operate the LLC converter in a forward mode in which the first side functions as an inverter and the second side functions as a rectifier, and to operate the LLC converter in a reverse mode in which the second side functions as an inverter and the first side functions as a rectifier. In the reverse mode, the controller is operable to delay turn off of the switch network on the first side at an operating frequency above resonance of the LLC converter, to yield a gain greater than one in the reverse mode.

Abstract: This disclosure is directed to circuits for controlling voltage from a voltage source to one or more light emitting diodes. The circuit includes a first transistor comprising a power switch that is configured to define a load current path from the voltage source to the one or more light emitting diodes. The circuit also includes a second transistor, which can be controlled based on the light emitting diodes, wherein the second transistor is configured to turn off when one or more of the lights emitting diodes exhibit an electoral short. The first transistor is configured to turn off in response to the second transistor turning off so as to provide short circuit protection for the circuit.

Abstract: According to one configuration, an inductor device comprises: core material and one or more electrically conductive paths. The core material is magnetically permeable and surrounds (envelops) the one or more electrically conductive paths. Each of the electrically conductive paths extends through the core material of the inductor device from a first end of the inductor device to a second end of the inductor device. The magnetically permeable core material is operative to confine (guide, carry, convey, localize, etc.) respective magnetic flux generated from current flowing through a respective electrically conductive path. The core material stores the magnetic flux energy (i.e., first magnetic flux) generated from the current flowing through the first electrically conductive path.

Abstract: A signal encoder for encoding a wheel speed sensor signal includes an input interface. The input interface is configured to receive a wheel speed sensor signal providing speed information and additional information. Furthermore, the signal encoder includes a signal processing circuit. The signal processing circuit is configured to generate a first and a second speed pulse. A time interval between the first and the second speed pulse corresponds to the speed information. Additionally, the signal processing circuit is configured to generate a data pulse between the first and the second speed pulse based on the additional information. The generation of the data pulse is in in accordance with a modulation scheme having a modulation order of at least three. Furthermore, the signal encoder includes an output interface. The output interface is configured to sequentially output the first speed pulse, the data pulse, and the second speed pulse.

Abstract: In various embodiments, a method of processing a monocrystalline substrate is provided. The method may include severing the substrate along a main processing side into at least two monocrystalline substrate segments, and forming a micromechanical structure comprising at least one monocrystalline substrate segment of the at least two substrate segments.

Abstract: The present disclosure relates, inter alia, to a stator package for use in an inductive angle sensor, wherein the stator package includes a substrate, on which at least two metallization layers arranged at different levels are arranged. The stator package also includes a semiconductor chip with an integrated circuit, wherein an electrically insulating potting compound surrounds the substrate including the semiconductor chip and a receiving coil arrangement. The receiving coil arrangement includes at least two electrically conductive receiving coils, which are implemented in the two metallization layers by thin-film technology.

Abstract: A radio frequency circuit includes an input terminal configured to receive a reception signal from an antenna; a reception signal path coupled to the input terminal and including a mixer and an analog-to-digital converter (ADC), where the ADC generates a digital signal representing an input signal to the ADC; a test signal generator configured to generate a test signal that is injected into the reception signal path while the reception signal propagates along the reception signal path; a digital signal processor configured to receive the digital signal from a digital portion of the reception signal path, and analyze a frequency response of the digital signal; and a subtractor coupled to the digital portion of the reception signal path, the subtractor configured to remove test frequency components resulting from an injection of the test signal into the reception signal path from the digital signal.

Abstract: A semiconductor component includes gate structures extending into a silicon carbide body from a first surface. A width of the gate structures along a first horizontal direction parallel to the first surface is less than a vertical extent of the gate structures perpendicular to the first surface. Contact structures extend into the silicon carbide body from the first surface. The gate structures and the contact structures alternate along the first horizontal direction. Shielding regions in the silicon carbide body adjoin a bottom of the contact structures and are spaced apart from the gate structures along the first horizontal direction. Corresponding methods for producing the semiconductor component are also described.

Abstract: A semiconductor chip includes: a semiconductor substrate having driver circuitry configured to drive an array of electronic devices; a metal layer above the semiconductor substrate, the metal layer having an array of contacts electrically connected to the driver circuitry and configured to provide an electrical connection between the semiconductor chip and the array of electronic devices; and a plurality of structures formed in the metal layer and/or in a layer between the metal layer and the semiconductor substrate, the plurality of structures being visually unobstructed at a side of the metal layer which faces away from the semiconductor substrate. Each structure of the plurality of structures is physically encoded with a pattern that corresponds to a location of an individual pair of contacts within the array of contacts or a location of a group of adjacent pairs of contacts within the array of contacts.

Abstract: A method of forming contacts to an embedded semiconductor die includes embedding a semiconductor die in an encapsulation material, the semiconductor die having a first terminal at a first side of the semiconductor die, forming a first metal mask on a first surface of the encapsulation material, the first metal mask being positioned over the first side of the semiconductor die and exposing a first part of the encapsulation material aligned with the first terminal of the semiconductor die, directing a pressurized stream of liquid toward the first surface of the encapsulation material with the first metal mask, to remove the first exposed part of the encapsulation material and form a first contact opening to the first terminal of the semiconductor die, and forming an electrically conductive material in the first contact opening. Related semiconductor packages are also described.

Abstract: A process for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate includes removing at least some of the carbon residue by a chemical cleaning process, to clean the first metal layer. The first metal layer and/or the at least one second metal layer may be generated by sputtering deposition.

Abstract: A tunable Fabry-Perot (FP) filter element includes a first FP filter stack arranged at a movable first carrier element, and a second FP filter stack arranged in an opposing configuration to the first FP filter stack at a second carrier element, wherein, upon an actuation, the first carrier element with the first FP filter stack is vertically movable with respect to the second carrier element with the second FP filter stack, for adjusting the distance between the first and second opposing FP filter stack and wherein the movable first carrier element is formed as an SON structure (SON=silicon-on-nothing) in an SON substrate, wherein the SON structure is movable suspended by means of a mechanical spring element to the SON substrate.

Abstract: Sensor and method for determining operating states associated with one or more tires. The operating state of the tire can be determined based on one or more measures environmental conditions of the tire(s). For example, a controller can be configured to determine a change in one or more environmental conditions, including determining, for example, a rate-of-change value, a variance value, a standard deviation, or the like. The rate-of-change, variance, and/or standard deviation values can be compared to one or more threshold values to determine the operating state(s) associated with the tire(s). The environmental condition can include, for example, acceleration of the tire, pressure of the tire, and/or temperature of the tire. The operating state can be, for example, a filling state indicative of the tire being inflating, and/or a drive state indicative of the tire rotating about its axle.

Abstract: The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules.

Abstract: A method of manufacturing a semiconductor device includes reducing a thickness of a semiconductor substrate and/or forming a doped region in the semiconductor substrate. The method further includes changing an ion acceleration energy of an ion beam while effecting a relative movement between the semiconductor substrate and the ion beam impinging on the semiconductor substrate.

Abstract: Signal processing circuit for a Hall sensor and signal processing method. Signal processing circuits for four-phase spinning Hall magnetic field sensors, corresponding methods and corresponding magnetic field sensor apparatuses are provided. In this case, a correction signal (c) is generated on the basis of a first feedback signal (fb1) and a second feedback signal (fb2), wherein the first feedback signal (fb1) is provided with a shorter signal propagation time than the second feedback signal (fb2).