Abstract: A method of fabricating a tungsten contact in a semiconductor device comprises providing an oxide layer on a region of a silicon substrate; depositing a sealing dielectric layer over the oxide layer; and depositing an interlevel dielectric layer over the sealing layer. The interlevel dielectric layer, the sealing dielectric layer and the oxide layer are then etched through as far as the substrate thereby to form a contact hole and to expose the said region. A dopant is implanted into the said region whereby the implanted dopant is self-aligned to the contact hole. The substrate is thermally annealed. Tungsten is selectively deposited in the contact hole and an interconnect layer is deposited over the deposited tungsten contact. The invention also provides a semiconductor device which incorporates a tungsten contact and which can be fabricated by the method.

Abstract: A semiconductor device comprising at least one semiconductor chip, the or each semiconductor chip having a plurality of chip bonding pads, a package which encloses the at least one semiconductor chip, a first level interconnect comprising a printed circuit which overlies the at least one semiconductor chip in the package and extends externally of the package to provide a plurality of outer leads, and a second level interconnect comprising means for electrically connecting the chip bonding pads to selected contacts on the printed circuit, which contacts overlie the at least one semiconductor chip. The invention also relates to a method of manufacturing such a semiconductor device and to a method of assembling a semiconductor assembly.

Abstract: A method of fabricating a tungsten contact in a semiconductor device comprises providing an oxide layer on a region of a silicon substrate; depositing a sealing dielectric layer over the oxide layer; and depositing an interlevel dielectric layer over the sealing layer. The interlevel dielectric layer, the sealing dielectric layer and the oxide layer are then etched through as far as the substrate thereby to form a contact hole and to expose the said region. A dopant is implanted into the said region whereby the implanted dopant is self-aligned to the contact hole. The substrate is thermally annealed. Tungsten is selectively deposited in the contact hole and an interconnect layer is deposited over the deposited tungsten contact. The invention also provides a semiconductor device which incorporates a tungsten contact and which can be fabricated by the method.

Abstract: Computer appratus includes an instruction execution unit (13) having a plurality of functional units (14,16) each arranged to execute at least part of an instruction and instruction issuing circuitry (10,12) for issuing simultaneously a group of separate compatible instructions to the execution unit (13) the circuitry (12) having means for classifying each instruction in dependence on the or each functional unit required for execution of that instruction and means for testing the classification of successive instructions and selecting a group which according to their classification are compatible for simultaneous issue to the execution unit (13) without conflicting demands on any function unit (14,16) in the execution unit.

Abstract: In a semiconductor polycide resistive element having a first region of polysilicon of one conductivity type and second regions of polysilicon of opposite conductivity type, with silicide overlying the polysilicon but not the first region, the edges of the silicide are spaced apart from the boundaries between the opposite conductivity types.

Abstract: A semiconductor device comprising a silicon substrate, an oxide layer on the silicon substrate, a doped polysilicon region disposed on the oxide layer, a dielectric layer which has been deposited over the doped polysilicon region and the silicon substrate, a contact hole which is formed in the dielectric layer and extends over respective laterally adjacent portions of the doped polysilicon region and the silicon substrate and a contact which has been selectively deposited in the contact hole which electrically connects the said portions together.

Abstract: A fully associative cache memory for virtual addressing comprises a data RAM (50), a first CAM cell array (51) for holding virtual page addresses which each require address translation to identify a physical page in a main memory, a second CAM cell array (52) holding line or word in page addresses which remain the same for virtual and physical addresses, a physical address memory (53) for holding physical page addresses for the main memory corresponding to virtual page addresses in said first array (51), said first array (51) being connected both to said physical address memory (52) to access said physical address memory in response to a hit output from said first CAM cell array and to control circuitry (57) coupled between said first and second arrays (51,52) and the data RAM (50) to access the data RAM (50) in response to hit outputs from both said first and second CAM cell arrays (51,52).

Abstract: A semiconductor device comprising a silicon substrate, an oxide layer on the silicon substrate, a doped polysilicon region disposed on the oxide layer, a dielectric layer which has been deposited over the doped polysilicon region and the silicon substrate, a contact hole which is formed in the dielectric layer and extends over respective laterally adjacent portions of the doped polysilicon region and the silicon substrate and a contact which has been selectively deposited in the contact hole which electrically connects the said portions together.

Abstract: A microcomputer comprises an integrated circuit device with processor and memory and communication links arranged to provide non-shared connections to similar links of other microcomputers. The communication links include message synchronization and permit creation of networks of microcomputers with rapid communication between concurrent processes on the same or different microcomputers.

Abstract: A microcomputer includes an on-chip processor with at least 1K bytes of high density RAM on-chip together with isolation regions to protect the RAM from noise from transistors on-chip operating independently of the RAM.

Abstract: A switching circuit for an FET transistor includes a controlled current circuit coupled to the gate of the FET. The input to the controlled current circuit represents a desired rate of change of gate voltage of the FET and is generated by a circuit responsive to the average specific transconductance of two FETs of similar specific transconductance operating at different drain circuit densities.

Abstract: A method of fabricating a tungsten contact in a semiconductor device comprises providing an oxide layer on a region of a silicon substrate; depositing a sealing dielectric layer over the oxide layer; and depositing an interlevel dielectric layer over the sealing layer. The interlevel dielectric layer, the sealing dielectric layer and the oxide layer are then etched through as far as the substrate thereby to form a contact hole and to expose the said region. A dopant is implanted into the said region whereby the implanted dopant is self-aligned to the contact hole. The substrate is thermally annealed. Tungsten is selectively deposited in the contact hole and an interconnect layer is deposited over the deposited tungsten contact. The invention also provides a semiconductor device which incorporates a tungsten contact and which can be fabricated by the method.

Abstract: A method of routing messages through a network is described in which a message packet is dispatched with two node indicators through the network including a succession of routing switches. When the message packet reaches a routing switch identified by the first node indicator, that routing switch deletes the first node indicator and the second node indicator is then used to route the message packet through the network.

Abstract: A communications device, particularly but not exclusively for use with a routing circuit, transmits and receives message packets. An output buffer converts data and flow-control information into a plurality of bit sequences and transmits them at a predetermined frequency. An input buffer decodes informing sequences into data items and flow control information. The input buffer can store the data items and count them and transmit flow control information to the output buffer.

Abstract: A method of comparing a first multibit digital signal with a second multibit digital signal wherein to increase speed of obtaining an output signal said method comprises inputting input signals for each of said first and second signals and forming a respective codeword for each input signal, each codeword being at least one bit longer than the respective input signal and formed by the same error correcting code for both signals to provide increased minimum Hamming distance for the respective codewords, comparing respective bit locations of the codewords to form a plurality of match indicating signals for respective bit locations thereby indicating any mismatch by a mismatch at at least two bit locations, supplying said match indicating signals in parallel to gating circuitry arranged to provide an output indicating a match or mismatch between said codewords, said output being provided with a time delay less than that required for a single bit mismatch.

Abstract: A programmable logic device is disclosed which can be used either as a look-up table logic device or as a logic function generator. This enables combinations to be provided such as the combination of a look-up table with a fixed gate field programmable gate array.

Abstract: There is described clock generation circuitry comprising: a plurality of sequentially connected delay devices, a first one of which is coupled to receive the first clock signal, each delay device being operable to produce a trigger signal and an output signal at a predetermined time after receiving a trigger signal from the previously connected delay device; control circuitry common to said delay devices for controlling said predetermined time interval; and output circuitry coupled to receive the output signals of the delay devices to produce therefrom said second clock signal.

Abstract: In an integrated circuit, a multiplexor receives incoming data at a first rate and is controllable by a high rate clock signal to output that data serially at a second, higher rate. A processing device receives the data from the multiplexor at the higher rate and is controllable by a high rate clock signal to process that data. Clock generation circuitry receives a first clock signal at the first rate and produces the high rate signal for the processing device and the multiplexor. Clock generation circuitry includes sequentially connected delay devices, one connected to receive the first clock signal. Each delay device produces a trigger signal and an output signal a predetermined time after receiving the trigger signal from the previous delay device. A control circuit is common to the delay devices for controlling the predetermined time interval. An output circuit receives the output signals of the delay devices and produces the high rate clock signal.

Abstract: A communication interface for interconnecting a computer with at least one other device has a link output circuit and a link input circuit. A link output on one device is connected to a link input on another device by a data line and a parallel strobe line. Data is transmitted on the data line in serial bit strings forming a succession of tokens of predetermined lengths. Signal transitions are provided on the parallel strobe line where no signal transition occurs on the data line. Each token includes a bit indicating the length of the token and a parity bit providing a check on bits in a preceding token.

Abstract: A method of encoding data for transmission between computer devices is disclosed in which data is encoded into a plurality of sequences, each sequence containing an equal number of ones and zeros and being of a predetermined bit length. There is a finite set of the permutations of equal numbers of ones and zeros in that predetermined bit length. One subset of the finite set is selected for use as data codes and a second subset is selected for use as control codes.