Abstract: The disclosure provides a photoelectric detector. The photoelectric detector includes a waveguide layer, an absorption layer, and a cladding material. The absorption layer is located on the waveguide layer or at least partially embedded in the waveguide layer. The cladding material covers top portions and side walls of the waveguide layer and the absorption layer, at least one end surface of the photoelectric detector is a light incident surface, and light energy absorbed by a portion of the absorption layer adjacent to the light incident surface is smaller than light energy absorbed by other portions of the absorption layer.

Abstract: The disclosure provides a photoelectric detector. The photoelectric detector includes a waveguide layer, an absorption layer, and a cladding material. The absorption layer is located on an upper surface of the waveguide layer or at least partially embedded in the waveguide layer. The cladding material covers top portions and side walls of the waveguide layer and the absorption layer. At least one end surface of the photoelectric detector is a light incident surface, and a thickness of an end surface of the absorption layer adjacent to the light incident surface is smaller than a thickness of other portions.

Abstract: A wavelength division multiplexer/demultiplexer, a photonic integrated chip, and an optical module are provided. The wavelength division multiplexer/demultiplexer includes a substrate, a bus waveguide provided on the substrate, and at least two wavelength division multiplexing/demultiplexing units provided on the bus waveguide. Each of the at least two wavelength division multiplexing/demultiplexing units includes a mode multiplexer and an asymmetric Bragg grating. The mode multiplexer includes a first port, a second port, and a third port. The third port is connected to the asymmetric Bragg grating, so as to input a light in a TE1 mode or a higher-order mode to the asymmetric Bragg grating. The asymmetric Bragg grating transmits light containing wavelengths other than a wavelength ?i. A grating period of the asymmetric Bragg grating and the wavelength ?i satisfy a resonance condition.

Abstract: A silicon photonic integrated chip and a wavelength division multiplexer that includes at least two polarization control structures and at least one polarization-independent Mach-Zehnder interferometer on a silicon substrate are provided. The polarization control structure includes two input ports and one output port. The Mach-Zehnder interferometer includes two input ports and one optical signal output port for outputting a multiplexed optical signal. The output ports of the polarization control structures are connected to the input ports of the Mach-Zehnder interferometer. The polarization control structures have large bandwidths for increasing an optical bandwidth of the wavelength division multiplexer and reducing an optical loss. A quantity of phase shift arms that require tuning feedback is reduced to lower overall power consumption of the wavelength division multiplexer.

Abstract: A laser capable of reducing the difficulty of a wavelength tuning process, a fabrication method therefor, and a laser device. The laser comprises: an active light-emitting structure used for emitting light; a silicon-based structure which is bonded to the active light-emitting structure, and which comprises a silicon-based waveguide and at least two composite gratings, wherein the composite gratings are opposite to the active light-emitting structure and are formed in the silicon-based waveguide. Each composite grating comprises one primary grating and a plurality of secondary gratings, the secondary gratings are periodically arranged to form the primary grating, and the primary gratings in at least a portion of the composite gratings have different grating periods from that of the primary gratings in other composite gratings. The silicon-based structure and the active light-emitting structure form at least two laser units, and each laser unit corresponds to one composite grating.

Abstract: An optical module comprises a housing, and an optical assembly and a circuit board which are arranged inside the housing. The optical module further comprises an optical device box arranged inside the housing. The optical assembly is packaged in the optical device box; the circuit board is provided with an extension portion extending to overlap the optical device box; the optical device box is fixed on one surface of the extension portion; the optical device box is provided with an optical interface and an electrical interface; the optical assembly comprises a photoelectric chip and an optical processing unit, the photoelectric chip being electrically connected to the circuit board outside the optical device box by means of the electrical interface.

Abstract: An electro-absorption modulated distributed feedback laser chip includes a substrate having an upper surface and a lower surface opposite to each other, a laser-emitting portion located on the upper surface of the substrate and configured to emit a laser, a modulating portion located on the upper surface of the substrate and configured to modulate the laser emitted by the laser-emitting portion, a back metal electrode layer located on the lower surface of the substrate, a ground electrode located on the upper surface of the substrate, disposed near the modulating portion, and electrically connected to the back metal electrode layer, a signal electrode located on the upper surface of the substrate, disposed near the ground electrode and the modulating portion, and electrically connected to the modulating portion, and a waveguide structure coupled to the laser-emitting portion and the modulating portion. A laser chip encapsulation structure is also provided.

Abstract: The present application discloses a connection device, comprising a housing and a heat dissipation block. The housing is provided with an accommodation cavity for insertion of a plug connector, and a heat dissipation Window in communication with the accommodation cavity. The heat dissipationblock is disposed on the side of the housing provided with the heat dissipation Window. The connection device further comprises an adjustment assembly for adjusting the heat dissipation block so as to make the heat dissipation block close to or distant from the accommodation cavity. The heat dissipation block has a thermally conductive connection state in which the heat dissipation block approaches to abut against the plug connector after the plug connector is inserted in place.

Abstract: A photodetector with an integrated reflective grating structure includes a substrate, an active layer disposed on the substrate, and a grating structure disposed between the substrate and the active layer. A first doped region is formed on the substrate at a location near the grating structure. A second doped region is formed on a surface of the active layer away from the grating structure. The doping type of the second doped region is different from that of the first doped region.

Abstract: A wavelength selection method for a tunable laser includes: obtaining a target wavelength; and calculating target resistance values of two thermistors, respectively, corresponding to the target wavelength. Each of the two thermistors is used to monitor the temperature of a corresponding one of two wavelength selection components. Each of the target resistance values is calculated according to a relationship between a wavelength drift and a resistance change of the corresponding thermistor and according to an initial wavelength and an initial resistance value of the corresponding thermistor corresponding to the initial wavelength. The method further includes: heating the two wavelength selection components to control their temperatures until real-time resistance values of the two thermistors reach the target resistance values, respectively; and stabilizing the real-time resistance values at the target resistance values and outputting a laser beam having the target wavelength.

Abstract: An optical module package structure, comprising a housing, and a circuit board, a first device, and a sub-board that are packaged in the housing. The housing comprises a first housing and a second housing. An outer surface of the first housing is a main heat-dissipation surface. The first device is electrically connected to the circuit board by means of the sub-board. A first signal line is provided the circuit board. An extension section is provided on the sub-board. The sub-board partially overlaps the circuit board, and is connected to same. The first signal line extends to the extension section. The surfaces of the sub-board and the circuit board which partially overlap each other face opposite directions. The first device is electrically connected to the extension section. The first device is provided with a heat-dissipation surface. The heat-dissipation surface faces the first housing, and is thermally connected to same.

Abstract: A hybrid integrated optoelectronic chip including an optoelectronic chip and a silicon photonic chip, a material of the optoelectronic chip being different from a material of the silicon photonic chip. The optoelectronic chip includes at least one first waveguide. The silicon photonic chip includes at least one second waveguide and an installation recess. The optoelectronic chip is installed in the installation recess, and the first waveguide is optically connected to the second waveguide.

Abstract: An optical module includes a housing, and a main circuit board, an optical transmitting assembly, an optical receiving assembly, and an electrical connector that are disposed inside the housing. The optical transmitting assembly includes at least two sets of lasers, a transmitting-end optical assembly, and a transmitting-end optical fiber receptacle. The optical receiving assembly includes at least two sets of photoelectric detectors, a receiving-end optical assembly, and a receiving-end optical fiber receptacle. The electrical connector electrically connects the optical transmitting assembly and the optical receiving assembly to the main circuit board.

Abstract: An optical interface assembly, comprising a lens, an optical receptacle, a stub disposed in the optical receptacle. The lens includes a convex surface farther away from the stub and a flat surface near the stub, the flat surface and a cross section of the lens being disposed at an inclined angle from each other. A first end surface of the stub facing the lens is disposed at an inclined angle relative to an axis of the stub. When a light beam is coupled into the stub by the lens, a portion of a return light reflected from the first end surface of the stub is reflected to an outside of the lens.

Abstract: A receiver optical assembly includes: an optical platform, a receiver optical port and a wavelength division multiplexer being arranged along an optical path on the optical platform; a circuit board, a photodetector array being disposed on the circuit board; a mounting block, a focusing lens and an optical path shifter being disposed on t the mounting block, the mounting block being fixed on the circuit board, and the optical path shifter being placed above the photodetector array. Incident light containing a multi-channel optical signal enters through the receiver optical port, and the wavelength division multiplexer divides the incident light into a plurality of single-channel optical signal beams. The single-channel optical signal beams are coupled to photodetectors on the photodetector array after passing through the focusing lens and the optical path shifter on the mounting block.

Abstract: Provided are a silicon-based tunable filter, laser and an optical module. The tunable laser comprises a semiconductor optical amplifier and a silicon photonic integrated chip, wherein a first coupler, a phase regulator and a tunable filter are provided on the silicon photonic integrated chip; the tunable filter comprises a flat-top band-pass filter structure, a Mach-Zehnder interferometry (MZI) structure and a micro ring resonation (MRR) structure, which are cascaded; gain light emitted by the semiconductor optical amplifier is coupled to the silicon photonic integrated chip by means of the first coupler, and a narrowband filtered optical signal is output by means of the tunable filter; and the phase of the gain light is regulated by means of the phase regulator so as to output single-peak narrowband laser light with a tunable target wavelength.

Abstract: An optical assembly includes a base plate, a light transmitting component arranged on the base plate, a lens component arranged on the base plate along an optical path of light transmitted from the light transmitting component, a supporting member, and an auxiliary member. The supporting member includes a bottom surface that bonds to the base plate and a side surface that connects to the auxiliary member. The auxiliary member includes a side surface on which the lens component is disposed and a bonding surface that bonds to the side surface of the supporting member. The lens component is configured to focus and couple, or collimate, an optical signal transmitted from the light transmitting component. A bottom surface of the auxiliary member and a bottom surface of the lens component are both higher than the top surface of the base plate.

Abstract: An optical module includes a housing including an optical interface, a circuit board module disposed in the housing, a fiber optic receptacle module disposed in the housing and including a plurality of fiber optic receptacles, an optoelectronic chip disposed in the housing and electrically connected to the circuit board module, a position limiting card disposed behind the fiber optic receptacle module, and a plurality of through holes arranged at the optical interface. The plurality of fiber optic receptacles are installed at the optical interface and fit through the plurality of through holes, and the position limiting card is fixed to the housing and locks the fiber optic receptacle module tightly against the optical interface.

Abstract: An electro-optic modulator includes a base plate, an optical waveguide, at least one set of modulation electrodes, and an electromagnetic shielding structure. The electromagnetic shielding structure includes a top shielding member covering the set of modulation electrodes from above, and a side shielding member disposed on two sides of the set of modulation electrodes. At least a portion of the side shielding member extends into the base plate to isolate the set of modulation electrodes.

Abstract: An optical module includes a substrate, an optical device, and a plurality of light transmitting elements and a plurality of light receiving elements disposed between the optical device and the substrate. The optical device includes a device body, and an optical transceiver interface and a lens array that are disposed on the device body. The lens array is configured to optically couple the plurality of light transmitting elements with the optical transceiver interface, and optically couples the optical transceiver interface with the plurality of light receiving elements. An auxiliary lens is disposed on an optical coupling path between the plurality of light transmitting elements and the optical transceiver interface or between the optical transceiver interface and the plurality of light receiving elements.