Patents Assigned to INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
  • Semiconductor device and fabrication method thereof
    Patent number: 11201222
    Abstract: The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a barrier layer disposed above the substrate, and a dielectric layer disposed on the barrier layer and defining a first recess. The semiconductor device further includes a spacer disposed within the first recess and a gate disposed between a first portion of the spacer and a second portion of the spacer, wherein the gate defining a first recess.
    Type: Grant
    Filed: March 25, 2020
    Date of Patent: December 14, 2021
    Assignee: Innoscience (Zhuhai) Technology Co., Ltd.
    Inventor: King Yuen Wong
  • Semiconductor device and fabrication method thereof
    Patent number: 10971579
    Abstract: The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a doped group III-V layer, a conductor structure, and a metal layer. The doped group III-V layer is disposed on the substrate. The conductor structure is disposed on the doped group III-V layer. The metal layer is disposed between the conductor structure and the doped group III-V layer.
    Type: Grant
    Filed: September 9, 2019
    Date of Patent: April 6, 2021
    Assignee: INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
    Inventor: King Yuen Wong