Abstract: A silicon nanoparticle fluid including a) a set of silicon nanoparticles present in an amount of between about 1 wt % and about 20 wt % of the silicon nanoparticie fluid; b) a set of HMW binder molecules present in an amount of between about 0 wt % and about 10 wt % of the silicon nanoparticle fluid; and c) a set of capping agent molecules, such that at least some capping agent molecules are attached to the set of silicon nanoparticles. Preferably, the silicon nanoparticle fluid is a shear thinning fluid.

Abstract: A composition for doping semiconductor materials, such as silicon, may contain a) a solvent and a) an inorganic salt of a phosphor containing acid dispersed in the solvent. Also disclosed are doping methods using such composition as well as methods of making the doping composition.

Abstract: A ceramic boron-containing dopant paste is disclosed. The ceramic boron-containing dopant paste further comprising a set of solvents, a set of ceramic particles dispersed in the set of solvents, a set of boron compound particles dispersed in the set of solvents, a set of binder molecules dissolved in the set of solvents. Wherein, the ceramic boron-containing dopant paste has a shear thinning power law index n between about 0.01 and about 1.

Abstract: A particle collection apparatus is disclosed. The apparatus includes a baghouse housing comprising an entrance port, a collection port, a baghouse configured between the entrance port and the collection port, and a vacuum port coupled to the baghouse. The apparatus also includes a collection mechanism coupled to the collection port; and, a compression mechanism coupled to the baghouse.

Abstract: An apparatus for producing grafted Group IV nanoparticles is provided and includes a source of Group IV nanoparticles. A chamber is configured to carry the nanoparticles in a gas phase and has an inlet and an exit. The inlet configured to couple to an organic molecule source which is configured to provide organic molecules to the chamber. A plasma source is arranged to generate a plasma. The plasma causes the organic molecules to break down and/or activate in the chamber and bond to the nanoparticles. A method of producing grafted Group IV nanoparticles is also provided and includes receiving Group IV nanoparticles in a gas phase, creating a plasma with the nanoparticles, and allowing the organic molecules to break down and/or become activated in the plasma and bond with the nanoparticles.

Abstract: A high-fidelity dopant paste is disclosed. The high-fidelity dopant paste includes a solvent, a set of non-glass matrix particles dispersed into the solvent, and a dopant.

Abstract: A high-fidelity dopant paste is disclosed. The high-fidelity dopant paste includes a solvent, a set of non-glass matrix particles dispersed into the solvent, and a dopant.

Abstract: A method for manufacturing a photovoltaic cell with a locally diffused rear side, comprising steps of: (a) providing a doped silicon substrate, the substrate comprising a front, sunward facing, surface and a rear surface; (b) forming a silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the rear surface in a pattern, the boron-containing paste comprising a boron compound and a solvent; (d) depositing a phosphorus-containing doping paste on the rear surface in a pattern, the phosphorus-containing doping paste comprising a phosphorus compound and a solvent; (e) heating the silicon substrate in an ambient to a first temperature and for a first time period in order to locally diffuse boron and phosphorus into the rear surface of the silicon substrate.

Abstract: A method of forming a floating junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front surface and a rear surface. The method also includes depositing a set of masking particles on the rear surface in a set of patterns; and heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a particle masking layer. The method further includes exposing the substrate to a phosphorous deposition ambient at a second temperature and for a second time period, wherein a front surface PSG layer, a front surface phosphorous diffusion, a rear surface PSG layer, and a rear surface phosphorous diffusion are formed, and wherein a first phosphorous dopant surface concentration in the substrate proximate to the set of patterns is less than a second dopant surface concentration in the substrate not proximate to the set of patterns.

Abstract: A plasma processing apparatus for producing a set of Group IV semiconductor nanoparticles from a precursor gas is disclosed. The apparatus includes an outer dielectric tube, the outer tube including an outer tube inner surface and an outer tube outer surface, wherein the outer tube inner surface has an outer tube inner surface etching rate. The apparatus also includes an inner dielectric tube, the inner dielectric tube including an inner tube outer surface, wherein the outer tube inner surface and the inner tube outer surface define an annular channel, and further wherein the inner tube outer surface has an inner tube outer surface etching rate. The apparatus further includes a first outer electrode, the first outer electrode having a first outer electrode inner surface disposed on the outer tube outer surface.

Abstract: A solar cell, comprising: a doped silicon substrate, the silicon substrate comprising a front surface and a rear surface; a front phosphorous diffusion layer formed on the front surface; a front anti-reflective layer formed on the front phosphorous diffusion layer; a front metal electrode on the front surface in ohmic contact with the front phosphorous diffusion layer through the front anti-reflective layer; a rear passivation layer formed on the rear surface; a rear metal electrode in a pattern on the rear surface passing through the rear passivation layer; and a rear p+ diffusion area on the rear surface between the rear passivation layer and a boron-doped region of the silicon substrate, the rear p+ diffusion area surrounding the rear metal electrode.

Abstract: A ceramic boron-containing dopant paste is disclosed. The ceramic boron-containing dopant paste further comprising a set of solvents, a set of ceramic particles dispersed in the set of solvents, a set of boron compound particles dispersed in the set of solvents, a set of binder molecules dissolved in the set of solvents. Wherein, the ceramic boron-containing dopant paste has a shear thinning power law index n between about 0.01 and about 1.

Abstract: The present invention provides a radiofrequency plasma apparatus for the production of nanoparticles and method for producing nanoparticles using the apparatus. The apparatus is designed to provide high throughput and makes the continuous production of bulk quantities of high-quality crystalline nanoparticles possible. The electrode assembly of the plasma apparatus includes an outer electrode and a central electrode arranged in a concentric relationship to define an annular flow channel between the electrodes.

Abstract: A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front substrate surface. The method further includes depositing an ink on the front substrate surface in a ink pattern, the ink comprising a set of silicon-containing particles and a set of solvents. The method also includes heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a densified film ink pattern.

Abstract: Disclosed are methods of forming multi-doped junctions, which utilize a nanoparticle ink to form an ink pattern on a surface of a substrate. From the ink pattern, a densified film ink pattern can be formed. The disclosed methods may allow in situ controlling of dopant diffusion profiles.

Abstract: A method for calculating an offset value for aligned deposition of a second pattern onto a first pattern, comprising steps of: (a) loading a substrate with the first pattern on a surface of the substrate into a pattern recognition device at an original position inside the pattern recognition device; (b) determining a coordinate of a prescribed point of the first pattern by the pattern recognition device; (c) superimposing the second pattern onto the first pattern on the surface of the substrate; (d) bringing back the substrate with the first pattern and the second pattern into the original position inside the pattern recognition device; (e) determining a coordinate of a prescribed point of the second pattern by the pattern recognition device; wherein the prescribed point of the first pattern corresponds to the prescribed point of the second pattern; and (f) calculating the offset value between the first pattern and the second pattern.

Abstract: A method of forming an ohmic contact on a substrate is described. The method includes depositing a set of silicon particles on the substrate surface. The method also includes heating the substrate in a baking ambient to a baking temperature and for a baking time period in order to create a densified film ink pattern. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl3, a carrier N2 gas, a main N2 gas, and a reactive O2 gas at a deposition temperature and for a deposition time period, wherein a PSG layer is formed on the substrate surface. The method also includes heating the substrate in a drive-in ambient to a drive-in temperature and for a drive-in time period; and depositing a silicon nitride layer. The method further includes depositing a set of metal contacts on the set of silicon particles; and heating the substrate to a firing temperature and for a firing time period.

Abstract: A method of forming a metal contact on a silicon substrate is disclosed. The method includes depositing a nanoparticle ink on a substrate surface in a pattern, the nanoparticle ink comprising set of nanoparticles and a set of solvents. The method also includes heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a densified nanoparticle layer with a nanoparticle layer thickness of greater than about 50 nm. The method further includes depositing an SiNx layer on the substrate surface, SiNx layer having a SiNx layer thickness of between about 50 nm and about 110 nm; exposing the substrate to an etchant that is selective to the densified nanoparticle layer for a second time period and at a second temperature in order to create a via; and forming a metal contact in the via, wherein an ohmic contact is formed with the silicon substrate.

Abstract: The disclosure relates to a method of aligning a set of patterns on a substrate, which includes depositing on the substrate's surface a set of silicon nanoparticles, which includes a set of ligand molecules including a set of carbon atoms. The method involves forming a first set of regions where the nanoparticles are deposited, while the remaining portions of the substrate surface define a second set of regions. The method also includes densifying the set of nanoparticles into a thin film to form a set of silicon-organic zones on the substrate's surface, wherein the first and the second set of regions have respectively first and second reflectivity values, such that the ratio of the second reflectivity value to the first reflectivity value is greater than about 1.1.

Abstract: A method for forming a passivated densified nanoparticle thin film on a substrate in a chamber is disclosed. The method includes depositing a nanoparticle ink on a first region on the substrate, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 400° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes flowing an oxidizer gas into the chamber; and heating the porous compact to a second temperature between about 600° C. and about 1000° C., and for a second time period of between about 5 seconds and about 1 hour; wherein the passivated densified nanoparticle thin film is formed.