Patents Assigned to Institute of Materials Research & Engineering
  • Patent number: 8344360
    Abstract: An encapsulation for an organic light emitting diode (OLED) device is disclosed. The encapsulation includes a sealing dam surrounding the cell region of the OLED device to support a cap. Spacer particles are randomly located in the cell region to prevent the cap from contacting the active components, thereby protecting them from damage. The sealing dam provides a sealing region between the edge of the cap and dam in which an adhesive is applied to seal the OLED device. The use of the sealing dam advantageously enables devices to be formed with narrower sealing widths.
    Type: Grant
    Filed: September 28, 2001
    Date of Patent: January 1, 2013
    Assignees: Osram Opto Semiconductor GmbH, Institute of Materials Research and Engineering
    Inventors: Mark Auch, Ewald Guenther, Lim Shuang Fang, Chua Soo Jin, Low Bee Ling
  • Patent number: 7394153
    Abstract: An encapsulation for a device is disclosed. Spacer particles are randomly located in the device region to prevent a cap mounted on the substrate from contacting the active components, thereby protecting them from damage. The spacer particles are fixed to one side of the substrate to prevent any movement.
    Type: Grant
    Filed: November 20, 2001
    Date of Patent: July 1, 2008
    Assignees: Osram Opto Semiconductors GmbH, Institute of Materials Research and Engineering
    Inventors: Mark Auch, Ewald Guenther, Lim Shuang Fang, Chua Soo Jin
  • Patent number: 7297348
    Abstract: A drug delivery system that includes a hydrogel formed from cyclodextrin and an amphiphilic copolymer that includes an A polymer block comprising a poly(alkylene oxide) and a B polymer block comprising a poly(hydroxyalkanoate), and a therapeutically effective amount of at least one therapeutic agent intimately contained within the hydrogel. In one preferred embodiment of the invention, the A polymer block is poly(ethylene oxide) (PEO) and the B polymer block is poly[(R)-3-hydroxybutyrate] (PHB), and the copolymer is the triblock ABA copolymer PEO-PHB-PEO. A method of synthesizing the amphiphilic triblock copolymer is also provided.
    Type: Grant
    Filed: July 18, 2003
    Date of Patent: November 20, 2007
    Assignees: Omeros Corporation, Institute of Materials Research and Engineering
    Inventors: Jun Li, Xu Li, Xiping Ni, Kam W. Leong
  • Patent number: 7262441
    Abstract: An encapsulation for an electrical device is disclosed. The encapsulation comprises plastic substrates which are laminated onto the surface of the electrical device. The use of laminated plastics is particularly useful for flexible electrical devices such as organic LEDs.
    Type: Grant
    Filed: June 29, 2005
    Date of Patent: August 28, 2007
    Assignees: Osram Opto Semiconductors GmbH & Co. OHG, Institute of Materials Research and Engineering
    Inventors: Ewald Karl Michael Guenther, Wei Wang, Soo Jin Chua
  • Publication number: 20070190682
    Abstract: An OLED device includes pillars, wherein the pillars serve to pattern a conductive layer during deposition. The profile of the pillars covers the edges of at least one functional layer to protect it from exposure to potentially deleterious substances.
    Type: Application
    Filed: April 20, 2007
    Publication date: August 16, 2007
    Applicants: OSRAM OPTO SEMICONDUCTORS GMBH, INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING
    Inventors: Mark Auch, Ewald Guenther, Soo Jin Chua
  • Patent number: 7255823
    Abstract: An encapsulation for an organic light emitting diode (OLED) (201) device is disclosed. The encapsulation includes a sealing dam (280) surrounding the cell region of the OLED device to support a cap. The sealing dam provides a sealing region between the edge of the cap and dam in which an adhesive is applied to seal the OLED device. The use of the sealing dam advantageously enables devices to be formed with narrower sealing widths.
    Type: Grant
    Filed: September 6, 2000
    Date of Patent: August 14, 2007
    Assignees: Institute of Materials Research and Engineering, Osram Opto Semiconductor GmbH
    Inventors: Ewald Karl Michael Guenther, Mark Dai Joong Auch
  • Patent number: 7221093
    Abstract: An OLED device having pillars, wherein the pillars serve to pattern a conductive layer during deposition. The profile of the pillars covers the edges of at least one functional layer to protect it from exposure to potentially deleterious substances.
    Type: Grant
    Filed: June 10, 2002
    Date of Patent: May 22, 2007
    Assignees: Institute of Materials Research and Engineering, Osram Opto Semiconductor GmbH
    Inventors: Mark Auch, Ewald Guenther, Soo Jin Chua
  • Patent number: 7166007
    Abstract: A method of encapsulating a device is disclosed. Spacer particles are randomly located in the device region to prevent a cap mounted on the substrate from contacting the active components, thereby protecting them from damage. The spacer particles are fixed to one side of the substrate to prevent any movement.
    Type: Grant
    Filed: November 4, 2004
    Date of Patent: January 23, 2007
    Assignees: Osram Opto Semiconductors GmbH, Institute of Materials Research and Engineering
    Inventors: Mark Auch, Ewald Guenther, Lim Shuang Fang, Chua Soo Jin
  • Patent number: 7098591
    Abstract: A transparent conductive material in which the desired resistivity is achieved with a high carrier concentration is provided for use in an OLED. In one embodiment, the transparent conductive material comprises indium-tin-oxide. (ITO) with a high carrier concentration of at least at least 7×1020 cm?3. The high carrier concentration improved the performance of the OLED device.
    Type: Grant
    Filed: December 17, 1999
    Date of Patent: August 29, 2006
    Assignees: Osram Opto Semiconductors GmbH, Institute of Materials Research and Engineering
    Inventors: Furong Zhu, Ewald Karl Michael Guenther, Soo Jin Chua
  • Patent number: 6949825
    Abstract: An encapsulation for an electrical device is disclosed. The encapsulation comprises plastic substrates which are laminated onto the surface of the electrical device. The use of laminated plastics is particularly useful for flexible electrical devices such as organic LEDs.
    Type: Grant
    Filed: July 9, 1999
    Date of Patent: September 27, 2005
    Assignees: Osram Opto Semiconductor GmbH & Co. OHG, Institute of Materials Research and Engineering
    Inventors: Ewald Karl Michael Guenther, Wei Wang, Soo Jin Chua
  • Patent number: 6933537
    Abstract: Disclosed is a technique for increasing the shelf life of devices, such as OLED which requires hermetic sealing from moisture and oxygen with out increasing the bonding width. In one embodiment, the permeation path of moisture or oxygen is increased without increasing the bonding width. This is achieved by using a grooved interface between the cap and substrate on which the components of the device are formed. The grooved interface can comprise various geometric shapes.
    Type: Grant
    Filed: September 28, 2001
    Date of Patent: August 23, 2005
    Assignees: Osram Opto Semiconductors GmbH, Institute of Materials Research & Engineering
    Inventors: Low Hong Yee, Ewald Guenther, Chua Soo Jin
  • Publication number: 20050095861
    Abstract: The GaN single-crystal substrate 11 in accordance with the present invention has a polished surface subjected to heat treatment for at least 10 minutes at a substrate temperature of at least 1020° C. in a mixed gas atmosphere containing at least an NH3 gas. As a consequence, an atomic rearrangement is effected in the surface of the substrate 11 in which a large number of minute defects are formed by polishing, so as to flatten the surface of the substrate 11. Therefore, the surface of an epitaxial layer 12 formed on the substrate 11 can be made flat.
    Type: Application
    Filed: November 29, 2004
    Publication date: May 5, 2005
    Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD., Institute of Materials Research & Engineering
    Inventors: Masaki Ueno, Eiryo Takasuka, Soo-Jin Chua, Peng Chen
  • Patent number: 6861271
    Abstract: Indium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple InxGa1-xN/InyGa1-yN quantum wells (QWs) are formed by using TMIn and/or Triethylindium (TEIn), Ethyldimethylindium (EDMIn) as antisurfactant during MOCVD growth, wherein the photoluminescence wavelength from these dots ranges from 480 nm to 530 nm. Controlled amounts of TMIn and/or other Indium precursors are important in triggering the formation of dislocation-free QDs, as are the subsequent flows of ammonia and TMIn. This method can be readily used for the growth of the active layers of blue and green light emitting diodes (LEDs).
    Type: Grant
    Filed: August 5, 2003
    Date of Patent: March 1, 2005
    Assignees: The National University of Singapore, Institute of Materials Research & Engineering
    Inventors: Soo Jin Chua, Peng Li, Maosheng Hao, Ji Zhang
  • Patent number: 6841274
    Abstract: The GaN single-crystal substrate 11 in accordance with the present invention has a polished surface subjected to heat treatment for at least 10 minutes at a substrate temperature of at least 1020° C. in a mixed gas atmosphere containing at least an NH3 gas. As a consequence, an atomic rearrangement is effected in the surface of the substrate 11 in which a large number of minute defects are formed by polishing, so as to flatten the surface of the substrate 11. Therefore, the surface of an epitaxial layer 12 formed on the substrate 11 can be made flat.
    Type: Grant
    Filed: May 8, 2003
    Date of Patent: January 11, 2005
    Assignees: Sumitomo Electric Industries, Ltd., Institute of Materials Research & Engineering
    Inventors: Masaki Ueno, Eiryo Takasuka, Soo-Jin Chua, Peng Chen
  • Patent number: 6803245
    Abstract: An encapsulation procedure for an organic light emitting diode (OLED) device, especially for thin and therefore flexible substrates, is disclosed. The device is sealed hermetically against environmental and mechanical damage. The procedure includes the use of a thin cover lid holder and a substrate holder that are designed to handle thin substrates without damaging them. Thin substrates ensure sufficient mechanical flexibility for the OLED devices, and provides an overall thickness of less than 0.5 mm.
    Type: Grant
    Filed: September 28, 2001
    Date of Patent: October 12, 2004
    Assignees: Osram Opto Semiconductors GmbH, Institute of Materials Research and Engineering
    Inventors: Mark Auch, Ewald Guenther, Chua Soo Jin
  • Publication number: 20040197313
    Abstract: The invention relates to a chimeric promoter construct useful for neuronal cell specific gene expression. The invention provides a recombinant nucleic acid molecule that comprises a neuronal cell specific promoter such as platelet-derived growth factor &bgr;-chain promoter, operably linked to a heterologous enhancer which enhances the transcriptional activity of the promoter, such as cytomegalovirus immediate early gene enhancer. The promoter construct according to the invention can increase and prolong gene expression in neuronal cells and may be advantageously used in gene therapy of neuronal disorders.
    Type: Application
    Filed: April 2, 2003
    Publication date: October 7, 2004
    Applicant: Institute of Materials Research and Engineering
    Inventors: Shu Wang, Beihui Liu, Xu Wang
  • Patent number: 6776050
    Abstract: A support for facilitating the bending test of flexible substrates is disclosed. The support includes a plastic or adhesive plastic applied on the substrate to keep the shards together after breakage, thereby eliminating the process of collecting the shards and fitting them back together for failure analysis.
    Type: Grant
    Filed: September 28, 2001
    Date of Patent: August 17, 2004
    Assignees: Osrano Opto Semiconductors GmbH, Institute of Materials Research and Engineering
    Inventors: Mark Auch, Ewald Guenther, Chua Soo Jin, Chen Zhong
  • Patent number: 6737753
    Abstract: A barrier stack for sealing devices is described. The barrier stack includes at least first and second base layers bonded together with a high barrier adhesive. A base layer includes a flexible support coated on at least one major surface with a barrier layer. The adhesive advantageously seals defects, such as pinholes in the barrier layer, thus improving the barrier properties.
    Type: Grant
    Filed: September 28, 2001
    Date of Patent: May 18, 2004
    Assignees: Osram Opto Semiconductor GmbH, Institute of Materials Research and Engineering
    Inventors: Senthil Kumar, Chua Soo Jin, Mark Auch, Ewald Guenther
  • Publication number: 20040072799
    Abstract: A drug delivery system that includes a hydrogel formed from cyclodextrin and an amphiphilic copolymer that includes an A polymer block comprising a poly(alkylene oxide) and a B polymer block comprising a poly(hydroxyalkanoate), and a therapeutically effective amount of at least one therapeutic agent intimately contained within the hydrogel. In one preferred embodiment of the invention, the A polymer block is poly(ethylene oxide) (PEO) and the B polymer block is poly[(R)-3-hydroxybutyrate] (PHB), and the copolymer is the triblock ABA copolymer PEO-PHB-PEO. A method of synthesizing the amphiphilic triblock copolymer is also provided.
    Type: Application
    Filed: July 18, 2003
    Publication date: April 15, 2004
    Applicants: Omeros Corporation, Institute of Materials Research and Engineering
    Inventors: Jun Li, Xu Li, Xiping Ni, Kam W. Leong
  • Publication number: 20040023427
    Abstract: Indium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple InxGa1−xN/InyGa1−yN quantum wells (QWs) are formed by using TMIn and/or Triethylindium (TEIn), Ethyldimethylindium (EDMIn) as antisurfactant during MOCVD growth, wherein the photoluminescence wavelength from these dots ranges from 480 nm to 530 nm. Controlled amounts of TMIn and/or other Indium precursors are important in triggering the formation of dislocation-free QDs, as are the subsequent flows of ammonia and TMIn. This method can be readily used for the growth of the active layers of blue and green light emitting diodes (LEDs).
    Type: Application
    Filed: August 5, 2003
    Publication date: February 5, 2004
    Applicants: UNIVERSITY OF SINGAPORE, INSTITUTE OF MATERIALS RESEARCH & ENGINEERING
    Inventors: Soo Jin Chua, Peng Li, Maosheng Hao, Ji Zhang