Abstract: An OLED device having pillars, wherein the pillars serve to pattern a conductive layer during deposition. The profile of the pillars covers the edges of at least one functional layer to protect it from exposure to potentially deleterious substances.

Abstract: A process is provided for chemically modifying a dual-layer hollow fibre, wherein the fibre comprises a first layer consisting essentially of a polyimide and a second layer consisting essentially of a polymer which is substantially unaffected by the chemical modification process. The process comprises contacting the polyimide layer with a polyamine. In addition, a process is provided for chemically modifying a polyimide membrane in general, using a process which comprises contacting the membrane with an alcoholic solution of an aliphatic-aromatic polyamine.

Abstract: The GaN single-crystal substrate 11 in accordance with the present invention has a polished surface subjected to heat treatment for at least 10 minutes at a substrate temperature of at least 1020° C. in a mixed gas atmosphere containing at least an NH3 gas. As a consequence, an atomic rearrangement is effected in the surface of the substrate 11 in which a large number of minute defects are formed by polishing, so as to flatten the surface of the substrate 11. Therefore, the surface of an epitaxial layer 12 formed on the substrate 11 can be made flat.

Abstract: Indium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple InxGa1−xN/InyGa1−yN quantum wells (QWs) are formed by using TMIn and/or Triethylindium (TEIn), Ethyldimethylindium (EDMIn) as antisurfactant during MOCVD growth, wherein the photoluminescence wavelength from these dots ranges from 480 nm to 530 nm. Controlled amounts of TMIn and/or other Indium precursors are important in triggering the formation of dislocation-free QDs, as are the subsequent flows of ammonia and TMIn. This method can be readily used for the growth of the active layers of blue and green light emitting diodes (LEDs).

Abstract: A method of preparing a silicon surface for a subsequent processing said such as thermal oxidation, or metal silicide formation, via use of a novel wet chemical clean procedure, has been developed. The novel wet chemical clean procedure is comprised of three specific stages, with the first stage featuring the removal of organic contaminants and the growth of a native oxide layer on the silicon surface. A second stage features removal of the native oxide layer and removal of metallic contaminants from the silicon surface, while the third stage is used to dry the silicon surface. The novel wet chemical clean procedure is performed in less time, and using less chemicals, then counterpart wet chemical cleans also used for the preparation of silicon surfaces for subsequent processing steps.

Abstract: A method of fabricating a silicide layer on a silicon region of a semiconductor structure, the method comprising the steps of: providing a semiconductor structure having at least one silicon region on a surface thereof; depositing a layer comprising nickel and platinum on the at least one silicon layer; annealing the semiconductor structure and the nickel/platinum layer to react the nickel and the platinum with underlying silicon to form a nickel-platinum silicide, wherein annealing step takes place at temperature of between 680° C. and 720° C.

Abstract: A method of modifying a chip assembly substrate comprising the steps of:

Abstract: A method of plating an aromatic polymer substrate comprises: applying a strippable coating of a non-aromatic polymer to a substrate surface to be plated; selectively illuminating the coated substrate surface with laser light to ablate a selected area of the strippable coating and to activate an underlying region of the substrate surface exposed by the ablation of the strippable coating; contacting the substrate surface with a seeding solution containing polymer-stabilized catalytic seeding particles, so that the seeding particles adhere preferentially to the activated region of the substrate; and electrolessly plating the substrate surface, whereby the seeded areas of the substrate surface are selectively plated.

Abstract: A detachable, portable SEM column that is easily disconnected from the electron gun assembly and specimen chamber of the system, allowing different column designs to be used in a given SEM system. As an alternate design, the electron gun and column are configured as a single detachable, portable assembly. The column of the present invention contains a condenser lens and an objective lens, both designed employing permanent magnet elements for primary field generation. Relatively small coils are used for scanning and precise adjustment of focus.

Abstract: A buried hetero-structure with native oxidized current blocking layer for InP-based opto-electronic devices comprises a InP semiconductor substrate, a buffer layer, a ridge mesa containing lower confinement layer, active layer and upper grating confinement layer, a first InP cladding layer and a native oxidized Al-bearing layer as current blocking layers at both lateral edges, a second InP cladding layer, contact layer, contact metal, and the second ridge mesa covered with insulating layer. This method is to facilitate the processing of conventional buried hetero-structure InP-based opto-electronic device and improve the performance under high temperature and high current operation.

Abstract: A fiber-reinforced composite material with graded stiffness, and method of making the same. The degree of stiffness variation may be controlled via modifications to the fabrication processes. Products with varying stiffness along their lengths are described. In one example, a dental post is fabricated from material according to the present invention which has one end with low stiffness adapted for insertion into the root of the tooth, and a high stiffness end suitable to support the restoration.

Abstract: An area array flip chip device produced using wire bonding technology. The design and process for producing such a flip chip involves stud bumps which are bonded on the substrate, to give good electrical interconnections between the chip pads and the substrate pads. This completely eliminates the limitation of not being able to have stud bump interconnections over the active area of the chip, and allows the stud bump interconnection method to be applied over the entire chip area. The design and process can also be applied to the joining of a substrate or first level packaging to the board. In this embodiment, the stud bump process acts as a replacement for the BGA process.

Abstract: The present invention provides a high precision three-dimensional alignment system using SPM techniques and method of using the same. The system comprises a fine distance control unit for the effective three-dimensional micromovement in the nanometer range of a planar object, and proximity detection unit to monitor the alignment process. In the preferred embodiment, the fine distance control unit comprises a set of at least three strategically positioned fine distance control elements which are capable of controlled expansion and contraction in the nanometer range. The most preferred embodiment of the fine distance control element comprises a piezoelectric tube, which crystal size may be varied by varying an applied voltage. This system may be applied to microlithography, in which case the planar object is a scribing tool having a planar base with multiple tips fabricated on one surface.

Abstract: A detachable, portable SEM column that is easily disconnected from the electron gun assembly and specimen chamber of the system, allowing different column designs to be used in a given SEM system. As an alternate design, the electron gun and column are configured as a single detachable, portable assembly. The column of the present invention contains a condenser lens and an objective lens, both designed employing permanent magnet elements for primary field generation. Relatively small coils are used for scanning and precise adjustment of focus.