Abstract: The disclosure provides a system and method for multi-functional online testing of semiconductor light-emitting devices or modules. The system comprises an electrical characteristic generating and testing equipment, one or more optical characteristic detecting and controlling equipments, an optical signal processing and analyzing equipment, one or more thermal characteristic detecting equipments, a central monitoring and processing computer, a multi-channel integrated drive controlling equipment, one or more multi-stress accelerated degradation controlling equipments, and one or more load boards. The present disclosure enables in-situ online monitoring and testing under accelerated degradation in a multi-stress accelerated degradation environment.

Abstract: A method for manufacturing a distributed feedback laser array includes: forming a bottom separate confinement layer on a substrate; forming a quantum-well layer on the bottom separate confinement layer; forming a selective-area epitaxial dielectric mask pattern on the quantum-well layer; forming a top separate confinement layer on the quantum-well layer through selective-area epitaxial growth using the selective-area epitaxial dielectric mask pattern, the top separate confinement layer having different thicknesses for different laser units; removing the selective-area epitaxial dielectric mask pattern; forming an optical grating on the top separate confinement layer; and growing a contact layer on the optical grating. The present disclosure achieves different emission wavelengths for different laser units without significantly affect emission performance of the quantum-well material.

Abstract: The present invention discloses A graphene film electrical current spreading layer applied GaN-based LED in vertical. structure, comprising: a p-type metal electrode including a metal support substrate and a metal reflective mirror formed on the metal support substrate; a hole injecting layer formed on the metal reflective mirror of the p-type metal electrode; an electron blocking layer formed on the hole injecting layer; a lighting layer formed on the electron blocking layer; an electron limiting layer formed on the lighting layer; an electron injecting layer formed on the electron limiting layer; an electrical current spreading layer formed on the electron injecting layer; two n-type metal electrodes formed on the electrical spreading layer and covering a part of the electrical current spreading layer.

Abstract: A 3D package device of a photonic integrated chip matching circuit, comprising: a first carrier substrate; a first microwave transmission line array formed by evaporation on the top surface of the first carrier substrate to provide bias voltages and high-frequency modulation signals to the photonic integrated chip; a second carrier substrate formed perpendicularly to the first carrier substrate or to have a certain angle with respect to the first carrier substrate, so as to constitute a 3D structure; a second microwave transmission line array formed by evaporation on the bottom surface of the second carrier substrate to match electrodes of the first microwave transmission line array, the second microwave transmission line array being soldered or sintered with the electrodes of the first microwave transmission line array; an electrode array formed by evaporation on a side surface or two opposite side surfaces of the second carrier substrate; and a microwave circuit.

Abstract: A method for manufacturing a distributed feedback laser array includes: forming a bottom separate confinement layer on a substrate; forming a quantum-well layer on the bottom separate confinement layer; forming a selective-area epitaxial dielectric mask pattern on the quantum-well layer; forming a top separate confinement layer on the quantum-well layer through selective-area epitaxial growth using the selective-area epitaxial dielectric mask pattern, the top separate confinement layer having different thicknesses for different laser units; removing the selective-area epitaxial dielectric mask pattern; forming an optical grating on the top separate confinement layer; and growing a contact layer on the optical grating. The present disclosure achieves different emission wavelengths for different laser units without significantly affect emission performance of the quantum-well material.

Abstract: An optical fiber secure communication apparatus and a data encryption method therefor are provided. The apparatus comprises a transmitter and a receiver being connected with each other via an optical fiber. The transmitter comprises a PPC processor unit, a field programmable gate array test board, a light-emitting module, an optical fiber coupler and a connection optical fiber. The receiver comprises a wavelength division multiplexer, a connection optical fiber, a photodetector, a field programmable gate array test board, a PPC processor unit and a signal output interface. At the transmitter end, two or more paths of input data are forwarded by the PPC, encrypted by the FPGA and then transmitted to the light-emitting module of two or more wavelengths for conversion from electrical signals into optical signals. At the receiver end, signals of two or more wavelengths enter the photodetector for conversion into electrical signals, which are decrypted by the FPGA and then forwarded by the PPC for output.

Abstract: An optical fiber secure communication apparatus and a data encryption method therefor are provided. The apparatus comprises a transmitter and a receiver being connected with each other via an optical fiber. The transmitter comprises a PPC processor unit, a field programmable gate array test board, a light-emitting module, an optical fiber coupler and a connection optical fiber. The receiver comprises a wavelength division multiplexer, a connection optical fiber, a photodetector, a field programmable gate array test board, a PPC processor unit and a signal output interface. At the transmitter end, two or more paths of input data are forwarded by the PPC, encrypted by the FPGA and then transmitted to the light-emitting module of two or more wavelengths for conversion from electrical signals into optical signals. At the receiver end, signals of two or more wavelengths enter the photodetector for conversion into electrical signals, which are decrypted by the FPGA and then forwarded by the PPC for output.

Abstract: Fabrication method of GaN power LED with electrodes formed by composite optical coatings, comprising epitaxially growing N—GaN, active, and P—GaN layers successively on a substrate; depositing a mask layer thereon; coating the mask layer with photoresist; etching the mask layer into an N—GaN electrode pattern; etching through that electrode pattern to form an N—GaN electrode region; removing the mask layer and cleaning; forming a transparent, electrically conductive film simultaneously on the P—GaN and N—GaN layers; forming P—GaN and N—GaN transparent, electrically conductive electrodes by lift-off; forming bonding pad pattern for the P—GaN and N—GaN electrodes by photolithography process; simultaneously forming thereon bonding pad regions for the P—GaN and N—GaN electrodes by stepped electron beam evaporation; forming an antireflection film pattern by photolithography process; forming an antireflection film; thinning and polishing the backside of the substrate, then forming a reflector thereon; and completin

Abstract: This invention relates to a method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure, comprising: step 1: forming a selective growth pattern of a modulator section on a substrate; step 2: simultaneously growing a 2-stacked-layer active region structure of a modulator MQW layer and a laser MQW layer by the first epitaxy step; step 3: etching gratings, and removing the laser MQW layer in the modulator section by selective etching; and step 4: completing the growth of the entire electro-absorption modulated laser structure by a second epitaxy step.

Abstract: This invention relates to a method for manufacturing a GaN based LED of a back hole structure, and the method comprises: epitaxially growing an N type GaN layer, a multi-quantum wells emitting active region and a P type GaN layer in turn on an insulation substrate made of sapphire or other materials; etching the N type GaN layer by photoetching, and forming a P type ohmic contact electrode and an N type ohmic contact electrode; scribing the chip to divide the dies on the epitaxial chip into individual die; forming a SiO2 insulation isolation layer on both sides of the silicon chip, forming a metal electrode on a face side, and forming a back hole pattern on a back side; forming a back hole; forming a bump pattern for plating on the face side of the silicon chip by thick resist photoetching; forming a layer of alloy with low melting point on the back side of the silicon chip, thus forming a base; on the back side of the base, directly attaching the base to a heat sink of a housing; bonding the die with the fac

Abstract: A semiconductor laser with an equilateral triangle micro optical resonator has an output waveguide connected to the resonator for realizing directional emission, and the laser wafer structure is the slab waveguide constituted by lower cladding layer, active region and the upper cladding layer. The outer region of the equilateral triangle is etched to the lower cladding layer or substrate, while the unetched equilateral triangle region is used as the resonator, and the triangular sides serve as the reflecting mirrors. On one of the vertices or the sides of the triangle resonator connected or coupled an output waveguide can form an edge emission semiconductor laser and array having directive light emission.