Abstract: A voltage-controlled oscillator includes a voltage-current converter, a first ring oscillator and a second ring oscillator. The voltage-current converter includes a first transistor for receiving a first control voltage at its gate terminal, a second transistor for receiving a second control voltage at its gate terminal, a third transistor connected to the first transistor in series and has a gate terminal connected to a drain terminal of the first transistor, a fourth transistor connected to the second transistor in series and has a gate terminal connected to a drain terminal of the second transistor, a resistor connected to a source terminal of the first transistor and a source terminal of the second transistor, a fifth transistor having a gate terminal connected to the drain terminal of the first transistor, and a sixth transistor having a gate terminal connected to the drain terminal of the second transistor.

Abstract: Disclosed is a function masking apparatus in a symmetric cryptographic algorithm for preventing side channel attacks, including: a controller creating lookup tables for one or more internal functions included in a high security and light weight (HIGHT) algorithm, respectively based on a plurality of non-linear functions, a plurality of linear functions, and a plurality of constants which are randomly generated; and a storage unit storing the lookup tables for one or more internal functions included in the generated HIGHT algorithm.

Abstract: In a method for evaporation depositing uniform thin films, a film is deposited on a substrate of a vacuum environment while maintaining a constant deposition rate. A cover is installed on a wall of the evaporation vessel. When the evaporation material is heated to an evaporation state and the interior of the evaporation vessel reaches a first vapor saturation pressure, the vapor of the evaporation material flows towards a pressure stabilizing chamber. When the pressure stabilizing chamber reaches a second vapor saturation pressure which is smaller than the first vapor saturation pressure, the vacuum environment has a vacuum background pressure which is smaller than the second vapor saturation pressure, so that the evaporation material vapor flows from the pressure stabilizing chamber towards the vacuum environment at constant rate due to the pressure difference, so as to evaporate the substrate.

Abstract: A bit interleaver includes a first memory, a processor, and a second memory. The first memory stores a low-density parity check (LDPC) codeword having a length of 64800 and a code rate of 2/15. The processor generates an interleaved codeword by interleaving the LDPC codeword on a bit group basis. The size of the bit group corresponds to a parallel factor of the LDPC codeword. The second memory provides the interleaved codeword to a modulator for 16-symbol mapping.

Abstract: A display method for displaying an image on a transparent display component of a display device includes receiving a display content, determining a background resolution of the image, selecting one of background images as a first background image based on the display content and the background resolution, performing image processing on the first background image to generate a second background image, adding the display content to the second background image to generate the image, and displaying the image on the transparent display component.

Abstract: Disclosed herein is a liquid drum type fuel cell-metal recovery apparatus, which can produce power through electrochemical oxidation of coal by continuously receiving coal/metal oxide mixed particles.

Abstract: Provided is an electrochromic device including a first electrochromic layer, which includes a first nanostructure having first pores and first electrochromic molecules provided on the first nanostructure, on a first electrode, an electrolyte disposed on a top surface of the first electrochromic layer and extending to first recessed portions of the first electrochromic layer, and a second nanostructure disposed on the electrolyte. The first nanostructure may have the first recessed portions in a top surface thereof. The second nanostructure may have second pores therein and second recessed portions in a bottom surface thereof.

Abstract: The present invention relates to an adaptive transmitting device using limited feedback information in a mobile communication system, and a method thereof. According to an exemplary embodiment of the present invention, when the base station transmits a pilot signal to the terminal, the terminal generates channel information by using the pilot signal, generates additional channel information from the channel information, and transmits the channel information and the additional channel information to the base station. The base station determines band allocation, power allocation, and modulation methods for each use by using received feedback information, and transmits modulated traffic data to the terminal according to the determined methods.

Abstract: The disclosure relates to a grid-controlled X-ray source, a space X-ray communication system and a space X-ray communication method.

Abstract: Exemplary embodiments of the present invention relate to a failure recovery apparatus of digital logic circuit and method thereof when a fault occurs in the digital logic circuit. A failure recovery apparatus according to an embodiment of the present invention comprises: a fault detection block configured to determine fault occurrence by comparing output results of a plurality of digital logic circuit which perform the same operation using a clock having a first cycle; and a failure recovery block configured to perform a failure recovery operation of the plurality of digital logic circuit by using a clock having a second cycle which is longer than the first cycle when it is determined as that a fault occurs. According to exemplary embodiments of the present invention, when a fault occurs in digital logic circuits due to external factors, it provides high reliability in failure recovery of the digital logic circuits.

Abstract: A cold-adapted protease derived from Pseudoalteromonas arctica PAMC 21717 or a recombinant cold-adapted protease obtained by expressing a gene encoding the cold-adapted protease in E. coli is described, and more particularly, a crystal of a protease exhibiting activity at low temperatures, a method for crystallizing the protease, a method for preparing the protease, a recombinant microorganism that expresses the protease, a method for preparing the recombinant microorganism, a method for preparing the recombinant protease and the use of the cold-adapted protease. The cold-adapted protease exhibits high activity at low temperatures, and securely maintains its enzymatic activity even in the presence of high pH, various metal ions and surfactants. Thus, it is useful in various industrial applications.

Abstract: Provided is a method of aligning a camera using correspondence information between multi-images. The camera alignment method using correspondences between multi-images includes defining a correspondence relation between images photographed in the multi-camera system, estimating an initial position of the camera using the correspondence relation between the images and a Structure From Motion (SFM) algorithm, redefining a changed correspondence relation between the images as a result of the estimation of the initial position of the camera using a bundle edge to generate an optimal edge, and correcting the position of the camera based on the optimal edge.

Abstract: The present invention provides methods for increasing secretion of dopamine and other neurotransmitters and treating or reducing the incidence of diseases involving decreased secretion of dopamine and other neurotransmitters, e.g. Parkinson's disease, comprising administering to the subject a uridine or a source thereof, and compositions for treating or reducing an incidence of Parkinson's disease, comprising a uridine, a uridine monophosphate, or a source thereof.

Abstract: A catalyst precursor comprising (A) a microporous support; (B) a non-noble metal precursor; and (C) a pore-filler, wherein the micropores of the microporous support are filled with the pore-filler and the non-noble metal precursor so that the micropore surface area of the catalyst precursor is substantially smaller than the micropore surface area of the support when the pore-filler and the non-noble metal precursor are absent is provided. Also, a catalyst comprising the above catalyst precursor, wherein the catalyst precursor has been pyrolysed so that the micropore surface area of the catalyst is substantially larger than the micropore surface area of catalyst precursor, with the proviso that the pyrolysis is performed in the presence of a gas that is a nitrogen precursor when the microporous support, the non-noble metal precursor and the pore-filler are not nitrogen precursors is also provided. Methods of producing the catalyst precursor and the catalyst are provided.

Abstract: A lighting control device and method are disclosed herein. The lighting control device includes a control unit and a control request unit. The control unit sets up a virtual multiple lighting control unit corresponding to a lighting control command received from a lighting management device. The control request unit selects a wireless light fixture corresponding to a light fixture ID included in the lighting control command, and makes a lighting control request to the selected wireless light fixture. The control unit transfers a response to the lighting control request to the lighting management device, and thus allows a corresponding lighting switch to control the wireless light fixture.

Abstract: An infrared-transmitting film which is excellent in mechanical strength and environmental resistance. The infrared-transmitting film comprises a buffer layer formed on a surface of an infrared optical substrate and having a Vickers hardness greater than that of the substrate and an environmental resistance improving layer provided in contact with the buffer layer and having a Vickers hardness greater than that of the buffer layer.

Abstract: A bit interleaver, a bit-interleaved coded modulation (BICM) device and a bit interleaving method are disclosed herein. The bit interleaver includes a first memory, a processor, and a second memory. The first memory stores a low-density parity check (LDPC) codeword having a length of 64800 and a code rate of 7/15. The processor generates an interleaved codeword by interleaving the LDPC codeword on a bit group basis. The size of the bit group corresponds to a parallel factor of the LDPC codeword. The second memory provides the interleaved codeword to a modulator for quadrature phase shift keying (QPSK) modulation.

Abstract: A tomography apparatus includes a data acquirer which acquires a first image which corresponds to a first time point and a second image which corresponds to a second time point by performing a tomography scan on an object; an image reconstructor which acquires first information which relates to a relationship between a motion amount of the object and the time based on a motion amount between the first image and the second image, predicts a third image which corresponds to a third time point between the first and second time points based on the first information, corrects the first information by using the predicted third image and measured data which corresponds to the third time point, and reconstructs the third image by using the corrected first information; and a display which displays the reconstructed third image.

Abstract: A method of manufacturing a FinFET device is provided, comprising: a. providing a substrate (100); b. forming a fin (200) on the substrate; c. forming an shallow trench isolation structure (300) on the substrate; d. forming an sacrificial gate stack on the isolation structure, wherein the sacrificial gate stack intersects the fin; e. forming source/drain doping regions by ion implantation into the fin; f. depositing an interlayer dielectric layer (400) on the substrate; g. removing the sacrificial gate stack to form a sacrificial gate vacancy; h. forming an doped region (201) under the sacrificial gate vacancy; i. etching the shallow trench isolation structure (300) under the sacrificial gate vacancy until the top surface of the shallow trench isolation structure (300) levels with the bottom surface of the source/drain doping regions; j. forming a new gate stack in the sacrificial gate vacancy.