Patents Assigned to INSTITUTE
  • Patent number: 7217601
    Abstract: In accordance with the invention, an electrically conducting charge transfer channel is formed in a semiconductor substrate and an electrically insulating layer is formed on a surface of the substrate; a layer of gate electrode material is formed on the insulating layer. On the gate material layer is formed a first patterned masking layer having apertures that expose regions of the underlying gate material layer that are to form gate electrodes, and the first-pattern-exposed regions of the gate material layer are electrically doped. In addition, on the gate material layer is formed a second patterned masking layer having apertures that expose regions of the underlying gate material layer that are to form gaps between gate electrodes, and the second-pattern-exposed regions of the gate material layer are etched.
    Type: Grant
    Filed: October 22, 2003
    Date of Patent: May 15, 2007
    Assignee: Massachusetts Institute of Technology
    Inventors: Barry E. Burke, Vyshnavi Suntharalingam
  • Patent number: 7218067
    Abstract: A magnetic actuator is provided including a magnetic field-actuated material and a plurality of interconnected electrically conducting coils, each coil including a number of wire turns arranged relative to at least one other coil to produce at the magnetic field-actuated material, by superposition, a magnetic field that is substantially oriented in one of a plurality of selectable discrete directions. An actuator drive circuit is connected to the coils in a circuit configuration that reverses a direction of electrical current flow through at least one of the coils to reorient the magnetic field from a first selected direction to a second selected direction of the plurality of selectable discrete directions.
    Type: Grant
    Filed: April 4, 2005
    Date of Patent: May 15, 2007
    Assignee: Massachusetts Institute of Technology
    Inventor: Miguel A. Marioni
  • Patent number: 7217311
    Abstract: The present invention relates to a metal nanocomposite powder reinforced with carbon nanotubes and to a process of producing a metal nanocomposite powder homogeneously reinforced with carbon nanotubes in a metal matrix powder.
    Type: Grant
    Filed: March 15, 2004
    Date of Patent: May 15, 2007
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Soon Hyung Hong, Seung Il Cha, Kyung Tae Kim, Seong Hyun Hong
  • Patent number: 7216793
    Abstract: A friction stir welding (FSW) travel axis load control method and apparatus for controlling a travel axis load applied to a FSW setup during the joining of workpieces by FSW. The method and apparatus recognize that controlling certain attributes of a friction stir welding plasticized region are key to controlling the quality of the resulting weld. This invention controls any of a number of qualities associated with the plasticized region thereby producing welds having improved mechanical and aesthetic properties, as well as extending the life of the FSW tool. The method and apparatus may control the FSW process to obtain a predetermined optimum size of a heat affected zone. The plasticized region may be monitored in a number of ways including, but not limited to, force on the tool, torque applied to the tool, workpiece temperature, plasticized region physical dimension, as well as changing surface characteristics such as color and reflectivity.
    Type: Grant
    Filed: May 26, 2004
    Date of Patent: May 15, 2007
    Assignee: Edison Welding Institute, Inc.
    Inventors: Timothy V. Stotler, Timothy J. Trapp
  • Patent number: 7217404
    Abstract: A method of transforming a carbon single wall nanotube (SWNT) is provided. The method comprises exposing the SWNT to light having a power sufficient to ignite or reconstruct the SWNT such that the SWNT is ignited or reconstructed by the exposure to the light.
    Type: Grant
    Filed: February 19, 2003
    Date of Patent: May 15, 2007
    Assignee: Rensselaer Polytechnic Institute
    Inventors: Pulickel M. Ajayan, Ramanath Ganapathiraman, Andres de la Guardia
  • Patent number: 7217551
    Abstract: The invention provides an isolated nucleic acid molecule having substantially the same nucleotide sequence as SEQ ID NO:1. Also provided is an isolated oligonucleotide having at least 15 contiguous nucleotides of a nucleotide sequence referenced as SEQ ID NO:11. An isolated polypeptide having substantially the same amino acid sequence as SEQ ID NO:2 is further provided as well as an antibody, or antigen binding fragment thereof, which specifically binds to an ATX polypeptide and has an amino acid sequence as referenced in SEQ ID NO:2. A method for identifying an ATX-modulatory compound is additionally provided. The method consists of measuring the level of an ATX polypeptide in the presence of a test compound, wherein a difference in the level of said ATX polypeptide in the presence of said test compound compared to in the absence of said test compound indicating that said test compound is an ATX-modulatory compound, and wherein said ATX-modulatory compound is not caffeine or wortmannin.
    Type: Grant
    Filed: December 20, 2006
    Date of Patent: May 15, 2007
    Assignee: The Burnham Institute
    Inventors: Robert T. Abraham, Diane M. Otterness
  • Publication number: 20070105772
    Abstract: The invention provides methods of screening to identify compounds that modulate the ability of a protein to translocate to the mitochondria when a cell is subjected to cellular stress. Such compounds can be useful to modulate the level of apoptosis in a cell. For example, compounds identified according to the methods described herein can be used to treat disorders characterized by excessive apoptosis, e.g., a neurological disorder, or insufficient apoptosis, e.g., cancer.
    Type: Application
    Filed: October 3, 2006
    Publication date: May 10, 2007
    Applicants: Dana-Farber Cancer Institute, Inc., The University of Chicago
    Inventors: Donald Kufe, Rima Kaddurah-Daouk, Ralph Weichselbaum
  • Publication number: 20070101934
    Abstract: Voltage applying means applies a pulse voltage between a nozzle and a substrate, the nozzle having a diameter ranging from 0.01 ?m to 25 ?m, an upper limit voltage (10) of the pulse voltage being equal to or greater than a discharge-inducing minimum voltage (30), that is a voltage required to start discharge of fluid. A lower limit first voltage (20a) is provided immediately before a rise of the pulse voltage, the lower limit first voltage (20a) having a same polarity as that of the upper limit voltage (10), an absolute value of the lower limit first voltage (20a) being set smaller than the discharge-inducing minimum voltage (30). A lower limit second voltage (20b) is provided immediately after a rise of the pulse voltage, the lower limit second voltage (20b) having an opposite polarity as that of the upper limit voltage (10), an absolute value of the lower limit second voltage (20b) being set smaller than the discharge-inducing minimum voltage (30).
    Type: Application
    Filed: August 6, 2004
    Publication date: May 10, 2007
    Applicants: Sharp Kabushiki Kaisha, Konica Minolta Holdings, Inc., National Institute of Advanced Industrial Science and Technology
    Inventors: Shigeru Nishio, Hironobu Iwashita, Kazunori Yamamoto, Kazuhiro Murata
  • Publication number: 20070103052
    Abstract: A field emission device (FED) includes a top substrate having a fluorescent layer and an anode electrode, a bottom substrate, at least one cathode electrode having a platform and at least one protrusion, an insulating layer having an opening-pattern or groove-pattern, at least one gate layer located on the insulating layer, and an electron emitter located on the protrusion of the cathode electrode, where the electron emitter can act as side emission of electrons. Each of the platform and the protrusion have a height different from each other, and that the protrusion is located in the opening of the insulating layer. Through the structure illustrated above, uniformity of emitting electron density can be improved and brightness and contrast of color for the FED can be enhanced.
    Type: Application
    Filed: August 2, 2006
    Publication date: May 10, 2007
    Applicants: Tatung Company, Industrial Technology Research Institute
    Inventors: Jian-Min Jeng, Jeng-Maw Chiou, Cheng-Feng Lin, Ling-Ko Chang
  • Publication number: 20070104238
    Abstract: The present invention provides quantum cascade lasers and amplifier that operate in a frequency range of about 1 Terahertz to about 10 Terahertz. In one aspect, a quantum cascade laser of the invention includes a semiconductor heterostructure that provides a plurality of lasing modules connected in series. Each lasing module includes a plurality of quantum well structure that collectively generate at least an upper lasing state, a lower lasing state, and a relaxation state such that the upper and the lower lasing states are separated by an energy corresponding to an optical frequency in a range of about 1 to about 10 Terahertz. The lower lasing state is selectively depopulated via resonant LO-phonon scattering of electrons into the relaxation state.
    Type: Application
    Filed: January 2, 2007
    Publication date: May 10, 2007
    Applicant: Massachusetts Institute of Technology
    Inventors: Qing Hu, Benjamin Williams
  • Publication number: 20070105321
    Abstract: The present invention provides a method for manufacturing a semiconductor nanowire device in mass production at a low cost without an additional complex nanowire alignment process or SOI substrate by forming a single crystal silicon nanowire with a simple process without forming an ultra fine pattern using an electron beam and transferring the nanowire separated from the substrate to another oxidation layer or insulation substrate. And also, the present invention suggests a method for simply manufacturing a nanowire device transferring the nanowire from a semiconductor substrate formed thereon the nanowire to another substrate formed thereon an insulation layer or the like.
    Type: Application
    Filed: September 21, 2006
    Publication date: May 10, 2007
    Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE
    Inventors: Kook-Nyung LEE, Woo Kyeong SEONG, Suk-Won JUNG, Won-hyo KIM
  • Publication number: 20070105274
    Abstract: Methods and structures for monolithically integrating monocrystalline silicon and monocrystalline non-silicon materials and devices are provided. In one structure, a semiconductor structure includes a silicon substrate and a first monocrystalline semiconductor layer disposed over the silicon substrate, wherein the first monocrystalline semiconductor layer has a lattice constant different from a lattice constant of relaxed silicon. The semiconductor structure further includes an insulating layer disposed over the first monocrystalline semiconductor layer in a first region, a monocrystalline silicon layer disposed over the insulating layer in the first region, and a second monocrystalline semiconductor layer disposed over at least a portion of the first monocrystalline semiconductor layer in a second region and absent from the first region. The second monocrystalline semiconductor layer has a lattice constant different from the lattice constant of relaxed silicon.
    Type: Application
    Filed: November 1, 2006
    Publication date: May 10, 2007
    Applicant: Massachusetts Institute of Technology
    Inventor: Eugene Fitzgerald
  • Publication number: 20070105335
    Abstract: Methods and structures for monolithically integrating monocrystalline silicon and monocrystalline non-silicon materials and devices are provided. In one structure, a monolithically integrated semiconductor device structure comprises a silicon substrate and a first monocrystalline semiconductor layer disposed over the silicon substrate, wherein the first monocrystalline semiconductor layer has a lattice constant different from a lattice constant of relaxed silicon. The structure also includes an insulating layer disposed over the first monocrystalline semiconductor layer in a first region and a monocrystalline silicon layer disposed over the insulating layer in the first region. The structure includes at least one silicon-based electronic device comprising an element including at least a portion of the monocrystalline silicon layer.
    Type: Application
    Filed: November 1, 2006
    Publication date: May 10, 2007
    Applicant: Massachusetts Institute of Technology
    Inventor: Eugene Fitzgerald
  • Publication number: 20070104086
    Abstract: A method for converting source data to a channel-modulated signal having a plurality of pairs of in-phase (I) and quadrature-phase (Q) data in a mobile station, wherein the mobile station uses at least one channel, includes the steps of: a) encoding the source data to generate at least one data part and a control part; b) generating at least one spreading code to be allocated to the channel, wherein each spreading code is selected on the basis of a data rate of the data part and the control part and spreading codes are selected so that two consecutive pairs of the I and Q data are correspondent to two points located on same point or symmetrical with respect to a zero point on a phase domain; and c) spreading the control part and the data part by using the spreading code, to thereby generate the channel-modulated signal. The method is capable of improving a power efficiency of a mobile station by reducing a peak-to-average power ratio in a mobile communication system.
    Type: Application
    Filed: December 29, 2006
    Publication date: May 10, 2007
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: SEUNG-CHAN BANG, TAE-JOONG KIM, JAE-HEUNG KIM, JUNG-IM KIM, JONG-SUK CHAE, HYUCK-JAE LEE, JAE-RYONG SHIM, NARM-HEE LEE
  • Publication number: 20070105972
    Abstract: In a method for synthesizing polymeric microstructures, a monomer stream is flowed, at a selected flow rate, through a fluidic channel. At least one shaped pulse of illumination is projected to the monomer stream, defining in the monomer stream a shape of at least one microstructure corresponding to the illumination pulse shape while polymerizing that microstructure shape in the monomer stream by the illumination pulse.
    Type: Application
    Filed: October 25, 2006
    Publication date: May 10, 2007
    Applicant: Massachusetts Institute of Technology
    Inventors: Patrick Doyle, Daniel Pregibon, Dhananjay Dendukuri
  • Publication number: 20070105172
    Abstract: A gene construct incorporating any of at least two luciferase genes which emit lights with different colors using an identical substrate such that the gene can be stably expressed in mammalian cells.
    Type: Application
    Filed: April 30, 2004
    Publication date: May 10, 2007
    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Yoshihiro Ohmiya, Yoshihiro Nakajima
  • Publication number: 20070105251
    Abstract: A laser structure includes at least one active layer having doped Ge so as to produce light emissions at approximately 1550 nm from the direct band gap of Ge. A first confinement structure is positioned on a top region of the at least one active layer. A second confinement structure is positioned on a bottom region the at least one active layer.
    Type: Application
    Filed: October 26, 2006
    Publication date: May 10, 2007
    Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    Inventors: Jifeng Liu, Dong Pan, Lionel Kimerling, Jurgen Michel, Sajan Saini
  • Publication number: 20070105162
    Abstract: The invention relates, in part, to monovalent avidin and streptavidin compositions. The invention also relates to methods of preparing and using monovalent avidin and streptavidin compositions. In some aspects of the invention, the compositions are monovalent avidin or monovalent streptavidin with a single femtomolar biotin-binding site.
    Type: Application
    Filed: October 27, 2006
    Publication date: May 10, 2007
    Applicant: Massachusetts Institute of Technology
    Inventors: Alice Ting, Mark Howarth
  • Publication number: 20070106070
    Abstract: Novel structural forms of T cell costimulatory molecules are described. These structural forms comprise a novel structural domain or have a structural domain deleted or added. The structural forms correspond to naturally-occurring alternatively spliced forms of T cell costimulatory molecules or variants thereof which can be produced by standard recombinant DNA techniques. In one embodiment, the T cell costimulatory molecule of the invention contains a novel cytoplasmic domain. In another embodiment, the T cell costimulatory molecule of the invention contains a novel signal peptide domain or has an immunoglobulin variable region-like domain deleted. The novel structural forms of T cell costimulatory molecules can be used to identify agents which stimulate the expression of alternative forms of costimulatory molecules and to identify components of the signal transduction pathway which results in costimulation of T cells.
    Type: Application
    Filed: October 26, 2006
    Publication date: May 10, 2007
    Applicants: Brigham and Women's Hospital, Dana-Farber Cancer Institute, Inc.
    Inventors: Arlene Sharpe, Francescopaolo Borriello, Gordon Freeman, Lee Nadler
  • Publication number: 20070103125
    Abstract: The invention provides a T-connected autotransformer for converting three-phase ac input voltages to nine phase shifted ac voltages feeding three sets of three-phase diode rectifier bridges. The nine phase shifted voltages are at an angle of +20 degree or ?20 degree with respect to the supply voltages and their magnitudes are essentially identical. The present design requires substantially fewer coils than other autotransformers for 18-pulse AC-DC converters, resulting in saving in space, volume, weight, size and cost of the converter. The magnetics requirement is only about 30% of the drive rating. The output voltage ratio can also be selected to give an average dc output from the proposed converter same as that of a conventional three-phase diode bridge rectifier. However, it is also possible to step up or step down the output voltage as required.
    Type: Application
    Filed: September 8, 2006
    Publication date: May 10, 2007
    Applicant: INDIAN INSTITUTE OF TECHNOLOGY, DELHI
    Inventors: Bhim Singh, G. Bhuvaneshwari, Vipin Garg