Abstract: An IC device may include memory layers over a logic layer. A memory layer may include memory arrays and one or more peripheral circuits coupled to the memory arrays. A memory array may include memory cells arranged in rows and columns. A row of memory cells may be associated with a word line. A column of memory cells may be associated with a bit line. The logic layer includes one or more logic circuits that can control data read operations and data write operations of the memory layers. The logic layer may also include a power interconnect, which facilitates power delivery to the memory layers, and a signal interconnect, which facilitates signal transmission within the IC device. The IC device may further include vias that couple the memory layers to the logic layer. Each via may be connected to one or more memory layers and the logic layer.

Abstract: Glass cores including protruding through glass vias and related methods are disclosed herein. An example substrate disclosed herein includes a glass core including a surface and a copper through glass via (TGV) extending through the glass core, the TGV including a protrusion extending from the surface.

Abstract: Systems and methods for improving cache efficiency and utilization are disclosed. In one embodiment, a graphics processor includes processing resources to perform graphics operations and a cache controller of a cache memory that is coupled to the processing resources. The cache controller is configured to set an initial aging policy using an aging field based on age of cache lines within the cache memory and to determine whether a hint or an instruction to indicate a level of aging has been received.

Abstract: An IC device may include memory layers over a logic layer. A memory layer includes memory arrays, each of which includes memory cells arranged in rows and columns. A row of memory cells may be associated with a word line. A column of memory cells may be associated with a bit line. Bit lines of different memory arrays may be coupled using one or more vias or source/drain electrodes of transistors in the memory arrays. Alternatively, word lines of different memory arrays may be coupled using one or more vias or gate electrodes of transistors in the memory arrays. The logic layer has a logic circuit that can control data read operations and data write operations of the memory layers. The logic layer may include a power interconnect, which facilitates power delivery to the memory layers, and a signal interconnect, which facilitates signal transmission within the memory device.

Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gates above the quantum well stack; and a plurality of second gates above the quantum well stack; wherein the plurality of first gates are arranged in electrically continuous rows extending in a first direction, and the plurality of second gates are arranged in electrically continuous rows extending in a second direction perpendicular to the first direction.

Abstract: Methods of selectively transferring portions of layers between substrates, and devices and systems formed using the same, are disclosed herein. In one embodiment, a first substrate with a release layer and a layer of integrated circuit (IC) components over the release layer is received, and a second substrate with one or more adhesive areas is received. The release layer on the first substrate is weakened. The first substrate is partially bonded to the second substrate, such that a subset of IC components on the first substrate are bonded to the adhesive areas on the second substrate. The first substrate is then separated from the second substrate, and the subset of IC components bonded to the second substrate are separated from the first substrate and remain on the second substrate.

Abstract: In one embodiment, a device includes a fiber array unit (FAU) coupled to a photonics integrated circuit (PIC) die. The PIC die includes a cavity defined at an edge of the PIC die, with outer edges of the cavity being formed at an angle less than 90 degrees with respect to a bottom surface of the cavity. The PIC die further includes first waveguides protruding into the cavity of the PIC die. The FAU includes a shelf portion extending from a body portion, and a plurality of second waveguides protruding from an outer edge of the shelf portion opposite the body portion. The FAU further includes alignment structures on outer edges of the shelf portion that are in contact with the angled edges of the cavity of the PIC die.

Abstract: Methods of selectively transferring integrated circuit (IC) components between substrates, and devices and systems formed using the same, are disclosed herein. In one embodiment, a first substrate with a release layer and a layer of IC components over the release layer is received, and a second substrate with one or more adhesive areas is received. The layer of IC components may include one or more waveguides, ring resonators, drivers, photodetectors, transimpedance amplifiers, and/or electronic integrated circuits. The first substrate is partially bonded to the second substrate, such that a subset of IC components on the first substrate are bonded to the adhesive areas on the second substrate. The first substrate is then separated from the second substrate, and the subset of IC components bonded to the second substrate are separated from the first substrate and remain on the second substrate.

Abstract: Embodiments described herein provide an apparatus comprising a plurality of processing resources including a first processing resource and a second processing resource, a memory communicatively coupled to the first processing resource and the second processing resource, and a processor to receive data dependencies for one or more tasks comprising one or more producer tasks executing on the first processing resource and one or more consumer tasks executing on the second processing resource and move a data output from one or more producer tasks executing on the first processing resource to a cache memory communicatively coupled to the second processing resource. Other embodiments may be described and claimed.

Abstract: Embodiments described herein include software, firmware, and hardware logic that provides techniques to perform arithmetic on sparse data via a systolic processing unit. One embodiment provides techniques to optimize training and inference on a systolic array when using sparse data. One embodiment provides techniques to use decompression information when performing sparse compute operations. One embodiment enables the disaggregation of special function compute arrays via a shared reg file. One embodiment enables packed data compress and expand operations on a GPGPU. One embodiment provides techniques to exploit block sparsity within the cache hierarchy of a GPGPU.

Abstract: Techniques for quality of service (QoS) support for input/output devices and other agents are described. In embodiments, a processing device includes execution circuitry to execute a plurality of software threads; hardware to control monitoring or allocating, among the plurality of software threads, one or more shared resources; and configuration storage to enable the monitoring or allocating of the one or more shared resources among the plurality of software threads and one or more channels through which one or more devices are to be connected to the one or more shared resources.

Abstract: An IC device may include one or more vias for delivering power to one or more transistors in the IC device. A via may have one or more widened ends to increase capacitance and decrease resistance. A transistor may include a source electrode over a source region and a drain electrode over a drain region. The source region or drain region may be in a support structure that has one or more semiconductor materials. The via has a body section and two end sections, the body section is between the end sections. One or both end sections are wider than the body section, e.g., by approximately 6 nanometers to approximately 12 nanometers. One end section is connected to an interconnect at the backside of the support structure. The other end section is connected to a jumper, which is connected to the source electrode or drain electrode.

Abstract: Apparatuses including a graphics processing unit, graphics multiprocessor, or graphics processor having an error detection correction logic for cache memory or shared memory are disclosed. In one embodiment, a graphics multiprocessor includes cache or local memory for storing data and error detection correction circuitry integrated with or coupled to the cache or local memory. The error detection correction circuitry is configured to perform a tag read for data of the cache or local memory to check error detection correction information.

Abstract: Hybrid bonding interconnect (HBI) architectures for scalability. Embodiments implement a bonding layer on a semiconductor die that includes a thick oxide layer overlaid with a thin layer of a hermetic material including silicon and at least one of carbon and nitrogen. The conductive bonds of the semiconductor die are placed in the thick oxide layer and exposed at the surface of the hermetic material. Some embodiments implement a non-bonding moisture seal ring (MSR) structure.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first layer having first dies in a first insulating material; a second layer on the first layer, the second layer including second dies having a first thickness and third dies having a second thickness different than the first thickness, the second dies and the third dies in a second insulating material, wherein the second dies and third dies have a first surface and an opposing second surface, and wherein the first surfaces of the second and third dies have a combined surface area between 3,000 square millimeters (mm2) and 9,000 mm2; and a redistribution layer (RDL) between the first layer and the second layer, the RDL including conductive pathways, wherein the first dies are electrically coupled to the second dies and the third dies by the conductive pathways and by interconnects.

Abstract: Techniques are provided herein to form an integrated circuit having dielectric material formed in cavities beneath source or drain regions. The cavities may be formed within subfin portions of semiconductor devices. In one such example, a FET (field effect transistor) includes a gate structure extending around a fin or any number of nanowires of semiconductor material. The semiconductor material may extend in a first direction between source and drain regions while the gate structure extends over the semiconductor material in a second direction substantially orthogonal to the first direction. A dielectric fill may be formed in a recess beneath the source or drain regions, or a dielectric liner may be formed on sidewalls of the recess, to prevent epitaxial growth of the source or drain regions from the subfins. Removal of the semiconductor subfin from the backside may then be performed without causing damage to the source or drain regions.

Abstract: Techniques are provided to form an integrated circuit having a gate electrode that includes at least one layer containing molybdenum. A transistor includes a gate structure having a gate electrode on a gate dielectric. The gate structure extends around a fin or any number of nanowires (or nanoribbons or nanosheets) of semiconductor material. The gate electrode includes one or more conductive layers on the gate dielectric with at least one of those conductive layers containing molybdenum (e.g., molybdenum nitride). The conductive layer having molybdenum may be used during the formation of the gate dielectric (e.g., during an annealing process), thus resulting in a higher quality gate dielectric.

Abstract: Techniques are provided to form an integrated circuit having an airgap spacer between at least a transistor gate structure and an adjacent source or drain contact. In one such example, a FET (field effect transistor) includes a gate structure that extends around a fin or any number of nanowires (or nanoribbons or nanosheets, as the case may be) of semiconductor material. The semiconductor material may extend in a first direction between source and drain regions while the gate structure extends over the semiconductor material in a second direction. Airgaps are provided in the regions between the gate structures and the adjacent source/drain contacts. The airgaps have a low dielectric constant (e.g., around 1.0) to reduce the parasitic capacitance between the conductive structures.

Abstract: An IC device may include functional regions as well as replica cells and filler cells that can reduce local layout effect in the IC device. A functional region includes functional cells, e.g., logic cell or memory cells. A white space may be between a first functional region and a second functional region. A first portion of the white space may be filled with replica cells, each of which is a replica of a cell in the first functional region. A second portion of the white space may be filled with filler cells that are not functional. The first function region is closer to the replica cells than to the filler cells. A third portion of the white space may be filled with replica cells, each of which is a replica of a cell in the second functional region. The second portion is between the first portion and the third portion.

Abstract: Technologies for tunable lasers in a photonic integrated circuit (PIC) die are disclosed. In an illustrative embodiment, a lidar system includes a PIC die with two lasers. The PIC die includes a switch to switch between the output of the first laser and the output of the second laser. Each laser can be tuned to different peaks of a Bragg grating in the cavity of the laser, and each laser can be frequency swept within the peak of the Bragg grating. In operation, one laser is changed to a different peak of the Bragg grating and allowed to stabilize while the other laser is selected for output and frequency swept. In this manner, one laser stabilizes while the other one is used. Such a lidar system can implement frequency-modulated continuous-wave (FMCW) lidar with a stable, compact laser source.