Abstract: There are provided a CMOS image sensor and a method for fabrication thereof. The CMOS image sensor having a reset transistor, a select transistor, a drive transistor and a photodiode, includes an active region in shape of a line, a gate electrode of the drive transistor, which is intersected with the active region, a blocking layer interposed between the active region and the gate electrode in which the blocking layer is formed on an intersection region of the active region and the gate electrode, and a metal contact electrically connected to the gate electrode, wherein the metal contact is not electrically connected to the active region by the blocking layer.

Abstract: A pixel and a pixel array of an image sensor device of the present invention have small pixel sizes by resetting sensed charge using a diode built vertically above a substrate. The pixel and the pixel array also have low noise performance by using a JFET as a source follower transistor for sensing charge. The pixel includes a floating diffusion node configured to sense photo-generated charge, a reset diode configured to reset the floating diffusion node in response to a reset signal, and a junction field effect transistor configured to output a signal having an output voltage level corresponding to a charge level of the floating diffusion node.

Abstract: A charge transfer transistor includes: a first diffusion region and a second diffusion region; a gate for controlling a charge transfer from the first diffusion region to the second diffusion region by a control signal; and a potential well incorporated under the gate, wherein the first diffusion region is a pinned photodiode. A pixel of an image sensor includes: a photodiode for generating and collecting a photo generated charge; a floating diffusion region for serving as a photo generated charge sensing node; a transfer gate for controlling a charge transfer from the photodiode to the floating diffusion region by a control signal; and a potential well incorporated under the transfer gate.

Abstract: An image sensor including a first region where a pad is to be formed, and a second region where a light-receiving element is to be formed. A pad is formed over a substrate of the first region. A passivation layer is formed over the substrate of the first and second regions to expose a portion of the pad. A color filter is formed over the passivation layer of the second region. A microlens is formed over the color filter. A bump is formed over the pad. A protective layer is formed between the bump and the pad to expose the portion of the pad.

Abstract: Solid-state image sensors, specifically image sensor pixels, which have three or four transistors, high sensitivity, low noise, and low dark current, are provided. The pixels have separate active regions for active components, row-shared photodiodes and may also contain a capacitor to adjust the sensitivity, signal-to-noise ratio and dynamic range. The low dark current is achieved by using pinned photodiodes.

Abstract: A backside illuminated image sensor includes a light receiving element disposed in a first substrate, an interlayer insulation layer disposed on the first substrate having the light receiving element, an align key spaced apart from the light receiving element and passing through the interlayer insulation layer and the first substrate, a plurality of interconnection layers disposed on the interlayer insulation layer in a multi-layered structure, wherein the backside of the lowermost interconnection layer is connected to the align key, a passivation layer covering the interconnection layers, a pad locally disposed on the backside of the first substrate and connected to the backside of the align key, a light anti-scattering layer disposed on the backside of the substrate having the pad, and a color filter and a microlens disposed on the light anti-scattering layer to face the light receiving element.

Abstract: An image sensor and a method for fabricating the same are provided. The image sensor includes a first conductive type substrate including a trench formed in a predetermined portion of the first conductive type substrate, a second conductive type impurity region for use in a photodiode, formed below a bottom surface of the trench in the first conductive type substrate, and a first conductive type epitaxial layer for use in the photodiode, buried in the trench.

Abstract: Disclosed are an image sensor and a method of manufacturing the same. A metal wiring consisting of a lower metal wiring, an upper metal wiring, and a plug connecting the lower and upper metal wirings, in which the lower and upper metal wiring are made of a transparent conductive film pattern, is formed on a substrate with devices formed thereon, the devices including a photodiode and gate electrodes. Then, a passivation film, a color filter, and a microlens are sequentially formed on the metal wiring. All or a portion of the metal wiring is formed in a transparent conductive film pattern. As such, the metal wiring is formed on the photodiode.

Abstract: Provided are an apparatus and method for improving an image quality of an image sensor, capable of adaptively removing noise occurring in a de-mosaicking that is performed for generating three-channel data of R, G and B from a single channel pixel structure based on a bayer pattern. The apparatus includes a first converting unit for converting RGB color data into a YCbCr color data, the RGB color data being obtained from bayer data through a de-mosaicking, a noise removal unit for removing noise from a Cb and a Cr color data outputted from the first converting unit, and a second converting unit for converting the Cb and the Cr color data from the noise removal unit and a Y data from the first converting unit into the RGB color data.

Abstract: By coupling a rating engine with call processing, rating rules are generated that enable a flexible interface between call process and call rating without necessitating that fixed data be passed between them. The real time charging system (RCS) provides a process that creates a generic entity, called a bucket, and uses it to keep track of account information and/or to count types of usage. The bucket allows an operator to define accounts and usage counters and how they are used as part of the rating rules. Use of these buckets is defined in rating rules, thus turning control over subscriber account and usage counters to the network operator. Further, the RCS provides a calendar option for limiting times during which calls to general telephone numbers can be made or received.

Abstract: The present invention relates a CMOS (Complementary Metal Oxide Semiconductor) image sensor capable of improving dynamic range by using an additional driver transistor. The CMOS image sensor according to the present invention has a pixel array which has a plurality of unit pixels each of which includes a photodiode and a fist transistor to act as a source follower buffer amplifier to amplify photogenerated charges accumulated in the photodiode. Also, the CMOS image sensor includes a second transistor for a buffer amplifier to amplify and output a gate input voltage in the unit pixel, wherein an output signal of the first transistor is applied to a gate of the second.

Abstract: A backside illuminated image sensor includes a photodiode, formed below the top surface of a semiconductor substrate, for receiving light illuminated from the backside of the semiconductor substrate to generate photoelectric charges, a reflecting gate, formed on the photodiode over the front upper surface of the semiconductor substrate, for reflecting light illuminated from the backside of the substrate and receiving a bias to control a depletion region of the photodiode, and a transfer gate for transferring photoelectric charges from the photodiode to a sensing node of a pixel.

Abstract: A method includes: forming a transfer gate on a semiconductor substrate; forming a first ion implantation region on a first side of the transfer gate; forming a second ion implantation region on the first side of the transfer gate such that the second ion implantation region encloses the first ion implantation region; forming a third ion implantation region along a surface of the semiconductor substrate; and forming a floating diffusion region at a second side of the transfer gate.

Abstract: A charge transfer transistor includes: a first diffusion region and a second diffusion region; a gate for controlling a charge transfer from the first diffusion region to the second diffusion region by a control signal; and a potential well incorporated under the gate, wherein the first diffusion region is a pinned photodiode. A pixel of an image sensor includes: a photodiode for generating and collecting a photo generated charge; a floating diffusion region for serving as a photo generated charge sensing node; a transfer gate for controlling a charge transfer from the photodiode to the floating diffusion region by a control signal; and a potential well incorporated under the transfer gate.

Abstract: A dual camera system includes a first bayer sensor block for outputting an external bayer image data constituted with photosensitive values of respective photosensitive cells which are sensitive to an incident light and a data processing unit, including a second bayer sensor block for outputting an internal bayer image data, for converting the external and the internal bayer image data into an image frame data with a predetermined format.

Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor includes a photodiode formed in a substrate structure, first to fourth gate electrodes formed over the substrate structure, spacers formed on both sidewalls of the first to fourth gate electrodes and filled between the third and fourth gate electrodes, a first ion implantation region formed in a portion of the substrate structure below the spacers filled between the third and fourth gate electrodes, and second ion implantation regions formed in portions of the substrate structure exposed between the spacers, the second ion implantation regions having a higher concentration than the first ion implantation region.

Abstract: An image sensor and digital gain compensation thereof. The image sensor includes a variable amplification device for amplifying an inputted analog image signal as a variable first gain value, an analog-to-digital conversion unit for converting the amplified analog image signal into a digital image signal, and a digital gain compensation device for comparing the first gain value with a reference gain value and compensating the digital image signal as a digital second gain value when the first gain value is less than the reference gain value.

Abstract: A CMOS image sensor includes a substrate including silicon, a silicon germanium (SiGe) epitaxial layer formed over the substrate, the SiGe epitaxial layer formed through epitaxial growth and doped with a predetermined concentration level of impurities, an undoped silicon epitaxial layer formed over the SiGe epitaxial layer by epitaxial growth, and a photodiode region formed from a top surface of the undoped silicon epitaxial layer to a predetermined depth in the SiGe epitaxial layer.

Abstract: A complementary metal oxide semiconductor (CMOS) device and a method for fabricating the same are provided. The CMOS image sensor includes: a first conductive type substrate including a trench; a channel stop layer formed by using a first conductive type epitaxial layer over an inner surface of the trench; a device isolation layer formed on the channel stop layer to fill the trench; a second conductive type. photodiode formed in a portion of the substrate in one side of the channel stop layer; and a transfer gate structure formed on the substrate adjacent to the photodiode to transfer photo-electrons generated from the photodiode.

Abstract: Disclosed is a color interpolation method. The present invention decides a precise position of an edge with use of a G value in a unit pixel structure with a size of 3×3, thereby using different color interpolations according to the position of the edge. Also, the present invention provides an effect of emphasizing an edge by emphasizing a brightness and lowering colors when the edge is placed in the vertical center or the horizontal center of the unit pixel structure of 3×3 with use of a property that the edge has stronger brightness than the colors and prevents an incorrect color.