Abstract: A CMOS image sensor has a pixel array provided with a plurality of unit pixels arranged in a matrix shape of rows and columns. Each of the unit pixel includes a photocharge generation means for generating photocharges by absorbing an external light; and a sensing node for receiving the photocharges transferred from the photocharge generation means, wherein the sensing node of the unit pixel in a previous scan line is shared with a sensing node of a unit pixel in a current scan line in response to a line select signal of the current line.

Abstract: A CMOS image sensor includes a substrate including silicon, a silicon germanium (SiGe) epitaxial layer formed over the substrate, the SiGe epitaxial layer formed through epitaxial growth and doped with a predetermined concentration level of impurities, an undoped silicon epitaxial layer formed over the SiGe epitaxial layer by epitaxial growth, and a photodiode region formed from a top surface of the undoped silicon epitaxial layer to a predetermined depth in the SiGe epitaxial layer.

Abstract: A system for facilitating 9-1-1 service delivery to internet telephony customers is provided. The system includes a server device for receiving a 9-1-1 call from a user device via a data network, where the 9-1-1 call are based on “9-1-1” digits dialed at the user device. The server device is configured to forward the received 9-1-1 call to an operator services interface operatively connected to the server device.

Abstract: Disclosed are an image sensor and a method of manufacturing the same. A metal wiring consisting of a lower metal wiring, an upper metal wiring, and a plug connecting the lower and upper metal wirings, in which the lower and upper metal wiring are made of a transparent conductive film pattern, is formed on a substrate with devices formed thereon, the devices including a photodiode and gate electrodes. Then, a passivation film, a color filter, and a microlens are sequentially formed on the metal wiring. All or a portion of the metal wiring is formed in a transparent conductive film pattern. As such, the metal wiring is formed on the photodiode.

Abstract: Disclosed are a pinned photodiode having and electrically controllable pinning layer and an image sensor including the pinned photodiode. A predetermined voltage is applied to the pinning layer for the depletion duration of the photodiode in the image sensor, so that stable surface pinning is acquired and the uniform surface pinning is achieved between pixels.

Abstract: An image sensor includes a trench formed by a shallow trench isolation (STI) process, a channel stop layer formed over a substrate in the trench, an isolation structure filled in the trench, and a photodiode formed in the substrate adjacent to a sidewall of the trench. In more detail of the image sensor, a trench is formed in a substrate through a STI process, and a channel stop layer is formed over the substrate in the trench. An isolation structure is formed in the trench, and a photodiode is formed in the substrate adjacent to a sidewall of the trench.

Abstract: Disclosed is a backside illuminated image sensor including a light receiving element formed in a first substrate, an interlayer insulation layer formed on the first substrate including the light receiving element, a via hole formed through the interlayer insulation layer and the first substrate while being spaced apart from the light receiving element, a spacer formed on an inner sidewall of the via hole, an alignment key to fill the via hole, interconnection layers formed on the interlayer insulation layer in a multilayer structure in which a backside of a lowermost layer of the interconnection layers is connected to the alignment key, a passivation layer covering the interconnection layers, a pad locally formed on a backside of the first substrate and connected to a backside of the alignment key, and a color filter and a microlens formed on the backside of the first substrate corresponding to the light receiving element.

Abstract: The invention describes in detail a solid-state CMOS image sensor, specifically the CMOS image sensor pixel that has only two row lines per pixel, pinned photodiode for sensing light, and one or two column lines. The pixel does not have an address transistor and the sensing and reset transistors are both MOS p-channel type. This architecture results in a low noise operation with a very small output transistor random noise. In addition this new pixel architecture allows for the standard CDS signal processing operation, which reduces the pixel to pixel non-uniformities and minimizes kTC reset noise. The pixel has high sensitivity, high conversion gain, high response uniformity, and low noise, which is enabled by the efficient 3T pixel layout.

Abstract: In a network of devices having a plurality of local domains, each local domain is likely to comprise a plurality of networks or communities of devices that communicate using a shared native protocol such as Jini, UPnP, Bluetooth, HAVi, WiFi, WiMAX or other standard architectures and protocols. The Open Services Gateway initiative (OSGi) created a platform and method for various networks to communicate with one another in a local domain. OSGi does not, however, solve the problems associated with communication across local domains. An instant messaging protocol such as Session Initiation Protocol (SIP) and a remote services register are used to provide a means for communication between local devices in a plurality of local OSGi domains using native communications protocols.

Abstract: An image sensor includes: a first impurity region of the first conductive type aligned with one side of the gate structure and extending to a first depth from a surface portion of the semiconductor layer; a first spacer formed on each sidewall of the gate structure; a second impurity region of the first conductive type, aligned with the first spacer and extending to a second depth that is larger than the first depth from the surface portion of the semiconductor layer; a second spacer formed on each sidewall of the first spacer; a third impurity region of the first conductive type aligned with the second spacer and extending to a third depth that is larger than the second depth from the surface portion of the semiconductor layer; and a fourth impurity region of a second conductive type beneath the third impurity region.

Abstract: A pixel of an image sensor includes only two signal lines per pixel, a pinned photodiode for sensing light, a floating base bipolar transistor, and no reset and address transistors. The floating base bipolar transistor provides the pixel with a gain, which can increase pixel sensitivity and reduce noise. The pixel also incorporates a vertical blooming control structure for an efficient blooming suppression. The output terminals of the pixel are coupled to a common column output line terminated by a special current sensing correlated double sampling circuit, which is used for subtraction of emitter leakage current. Based on this structure, the pixel has high sensitivity, high response uniformity, low noise, reduced size, and efficient layout.

Abstract: A circuit includes a luminance average value output unit for extracting luminance values from pixel data of the first and the second frames to generate first luminance average values for pixel lines of the first frame and second luminance average values for pixel lines of the second frame, a flicker curve generating unit for subtracting the second luminance average values from the first luminance average values, thereby generating a flicker curve, and a flicker detecting unit for extracting a plurality of local minimum points from the flicker curve, calculating a distance between each two neighboring local minimum points of the extracted local minimum points, and determining whether the flicker is present based on the distances and the frequency numbers of the distances.

Abstract: The present invention describes in detail the solid-state image sensor, specifically the image sensors pixel that has three transistors, high sensitivity, low reset noise, and low dark current. Low reset noise is achieved by parametrically changing the voltage dependent capacitance of the charge detection node in such a manner that during reset the charge detection node capacitance is low while during sensing and integration cycles the charge detection node capacitance is high. This feature thus results in high dynamic range, which is important for sensors using very small pixels. The low dark current generation is achieved by quenching the interface states by placing a p+ implant near the silicon-silicon dioxide interface.

Abstract: Disclosed is an improved method and apparatus for estimating and applying a step size value for a least mean squares echo canceller. A power estimate of an excitation signal is compared to a reference power level to determine a shift adjustment. The shift adjustment is added to a reference shift amount to determine a shift amount. The product of an excitation signal and an error signal is then calculated and the product is stored in a memory register comprising a plurality of bits. The bits stored in the memory register are shifted either left or right based upon the shift amount. The shift adjustment may be based in part upon the ratio of the excitation signal power estimate and the reference power level.

Abstract: A CMOS image sensor includes: a plurality of CDS/PGAs (correlating double sampling/programmable gain amplifiers) for processing output signals of pixels corresponding to same colors on different paths; and an offset difference removing part for removing offset difference that occurs when the same color signals are processed on the different paths, wherein the offset difference removing part includes: a dummy pixel array where light is shielded; a unit for reading signals of the dummy pixel array through the CDS/PGAs and storing average offset values for each path; and a signal synthesizing unit for synthesizing the average offset values and signals of an effective pixel array, which are read through the respective CDS/PGAs, and outputting signals of which offset difference is removed.

Abstract: A modem for use in Digital Subscriber Line communications transmits and receives data over the local subscriber loop in common with voice information over the loop, while avoiding the need for voice/data splitters. The modem responds to disruptions associated with “disturbance events” such as on-hook to off-hook transitions and the like by rapidly switching between pre-stored channel parameter control sets defining communications over the loop under varying conditions. In addition to changing parameter control sets responsive to a disturbance event, the modem may also change transmission power levels and other system parameters such as frequency domain equalizer characteristics. Further, provisions are made for reduced bandwidth communications under selected conditions.

Abstract: An image sensor includes a trench formed by a shallow trench isolation (STI) process, a channel stop layer formed over a substrate in the trench, an isolation structure filled in the trench, and a photodiode formed in the substrate adjacent to a sidewall of the trench. In more detail of the image sensor, a trench is formed in a substrate through a STI process, and a channel stop layer is formed over the substrate in the trench. An isolation structure is formed in the trench, and a photodiode is fanned in the substrate adjacent to a sidewall of the trench.

Abstract: Crosstalk between subscriber loops used to transmit different broadband services through the same bundled telephone cable is a significant limitation to providing digital subscriber line services. A method for estimating the crosstalk, identifying the sources of the crosstalk and predicting additional sources of crosstalk are disclosed. The crosstalk sources are identified in the frequency domain by maximizing the correlation with a “basis set” of received crosstalk PSDs which consist of the cascade of a finite set of known transmit PSDs types times a representative set of crosstalk couplings. Multiple crosstalk types are identified with a technique of successive spectral subtraction. Once a type is identified the crosstalk disturber is compared against all other members of the complete set for that type. Additionally, Multiple Regression (MR) techniques and a Matching Pursuit (MP) algorithm are used to increase the ability of the system and method to identify various crosstalk disturbers.

Abstract: A method for fabricating a complementary metal-oxide semiconductor (CMOS) image sensor includes providing a semi-finished substrate, forming a patterned blocking layer over a photodiode region of the substrate, implanting impurities on regions other than the photodiode region using a mask while the patterned blocking layer remains, and removing the mask.

Abstract: Methods and apparatus for maintaining the maximum achievable data rate on a DSL line, up to and including a rate to which a user subscribes is described. Performance monitoring is conducted on the DSL line on an ongoing basis to determine noise margins in each direction. Each noise margin is compared against pre-determined decreasing/increasing thresholds to determine whether the line characteristics dictate a data rate change without loss of synchronization. The invention supports dynamic provisioning changes including application driven service level change requests, e.g., new bandwidth-on demand services. In some embodiments, a combination of existing and new embedded operations channel (EOC) messages are used to implement the modem data rate changes. New EOC messages may be implemented using some of the reserved and/or vendor proprietary Opcodes currently permitted. Modem assigned data rate changes are implemented without a disruption of service, e.g.