Patents Assigned to International Superconductivity Technology Center
  • Patent number: 5534490
    Abstract: Provided is an Hg-Ba-Ca-Cu-O oxide superconductor having a high superconductivity transition temperature Tc and a method which can prepare the same in excellent reproducibility. This oxide superconductor consists essentially of Hg, Ba, Ca, Cu and O, and is expressed in a chemical formula (Hg.sub.1-X Cu.sub.X)Ba.sub.2 Ca.sub.2 Cu.sub.3 O.sub.Y, wherein X=0.05 to 0.7 and Y=8 to 8.75. A method of preparing the oxide superconductor comprises a step of mixing raw materials of Hg, Ba, Ca and Cu with each other so that (Hg+Ba):Ca:Cu=b:1:C and Hg:Ba=(1-a):a, wherein 0.625.ltoreq.a.ltoreq.0.714, 1.ltoreq.b.ltoreq.3 and 1.667.ltoreq.c.ltoreq.3.444, in mole ratio, and compression-molding the mixture, and a step of heat treating a compact obtained by the compression molding. This oxide superconductor has a superconductivity transition temperature Tc of 134 K., which is the highest at present.
    Type: Grant
    Filed: June 23, 1994
    Date of Patent: July 9, 1996
    Assignees: Sumitomo Electric Industries, Ltd., Tohoku Electric Power Co., Inc., Matsushita Electric Industrial Co., Ltd., International Superconductivity Technology Center
    Inventors: Makoto Itoh, Ayako Yamamoto, Kazuyuki Isawa, Seiji Adachi, Hisao Yamauchi, Shoji Tanaka
  • Patent number: 5534638
    Abstract: This describes the following five novel organic substances: Bis (ethylenedithio) tetrathiafulvalene (henceforth to be called BEDT-TTF) compounded with cyanometalate anions in what is called Tetracyano Nickel acid Bis (Ethylenedithio) Tetrathiafulvalene salt.hydrate expressed by (BEDT-TTF).sub.4 [Ni(CN).sub.4 ].H.sub.2 O, Tetracyano Platinum acid Bis (Ethylenedithio) Tetrathiafulvalene salt.hydrate that is expressed by (BEDT-TTF).sub.4 [Pt(CN).sub.4 ].H.sub.2 O, Cyanide Palladium Bis (Ethylenedithio) Tetrathiafulvalene salt that is expressed by (BEDT-TTF)-[Pd(CN).sub.2 ], Tetracyano Palladium acid Bis (Ethylenedithio) Tetrathiafulvalene salt.hydrate that is expressed by (BEDT-TFF).sub.4 [Pd(CN).sub.4 ].H.sub.2 O and Tetracyano Palladium acid Bis (Ethylenedithio) Tetrathiafulvalene salt that is represented by (BEDT-TTF).sub.4 [Pd(CN).sub.4 ]. BEDT-TTF, acting as a common constituent in the crystals of all of the above substances, provides the properties of an insulator, a metal or a superconductor.
    Type: Grant
    Filed: April 26, 1995
    Date of Patent: July 9, 1996
    Assignee: International Superconductivity Technology Center
    Inventors: Hatsumi Mori, Izumi Hirabayashi, Shoji Tanaka, Takehiko Mori, Yusei Maruyama, Hiroo Inokuchi
  • Patent number: 5525584
    Abstract: A high critical temperature and high critical current density superconductor is disclosed which contains a metal oxide expressed by the following formula (I):(R.sup.1.sub.1-x,Ba.sub.x)Ba.sub.2 Cu.sub.3 O.sub.d (I)wherein R.sup.1 stands for at least one element selected from the group consisting of La, Nd, Sm, Eu and Gd, x is a number greater than 0 but not greater than 0.5 and d is a number between 6.2 and 7.2. Fine phases of RE211, RE422 and/or a metal oxide expressed by the formula (R.sup.2.sub.1-z, Ba.sub.z) (Ba.sub.1-y, R.sup.2.sub.y).sub.2 Cu.sub.3 O.sub.p (R.sup.2 =La, Nd, Sm, Eu or Gd) may be dispersed in a matrix of the matrix phase of the formula (I). The above superconductor may be obtained by cooling a melt having a temperature of 1,000.degree.-1,300.degree. C. and containing R.sup.1, Ba, Cu and O at a cooling rate of 5.degree. C./hour or less under a partial pressure of oxygen of between 0.00001 and 0.05 atm, followed by annealing at 250.degree.-600.degree. C. in an oxygen atmosphere.
    Type: Grant
    Filed: May 26, 1995
    Date of Patent: June 11, 1996
    Assignees: International Superconductivity Technology Center, Railway Technical Research Institute, Shikoku Denryoku Kabushikigaisha, Tosoh Corporation
    Inventors: Masato Murakami, Sang-Im Yoo, Naomichi Sakai, Hiroshi Takaichi, Takamitsu Higuchi, Shoji Tanaka
  • Patent number: 5521150
    Abstract: Disclosed is a method of joining Y-based oxide superconductors on joining two or more Y-based oxide superconductors made by melting process under pressure, characterized by incorporating REBa.sub.2 Cu.sub.3 O.sub.7-.delta. (RE=Y, Ho, Er, Tm or Yb), Ag and BaCuO.sub.2 -CuO type composition to the joining interface as an adhesive phase for joining. It becomes possible to easily make a joined material that does not deteriorate the superconductive characteristic at joined interface.
    Type: Grant
    Filed: September 15, 1994
    Date of Patent: May 28, 1996
    Assignees: International Superconductivity Technology Center, Shikoku Denryoku Kabushiki Kaisha
    Inventors: Masato Murakami, Hiroshi Takaichi, Naomichi Sakai
  • Patent number: 5512541
    Abstract: The present invention is directed to a method for growing a superconductive film on a superconductive substrate in order to produce a bulk single crystal. According to a preferred embodiment, an oxide superconductive film of a material which is the same or similar to the substrate material is epitaxially grown at a temperature between 450.degree. C. and 800.degree. C. so that the film and substrate have the same lattice orientations. According to the present invention, problems associated with conventional films having non-superconductor substrates (e.g., MgO and SrTiO.sub.3) are avoided.
    Type: Grant
    Filed: September 12, 1994
    Date of Patent: April 30, 1996
    Assignees: Sumitomo Electric Industries, Ltd., International Superconductivity Technology Center
    Inventors: Masaya Konishi, Kunihiko Hayashi, Youichi Enomoto, Shoji Tanaka, Yasuji Yamada, Kanshi Ohtsu, Yasuo Kanamori, Yuh Shiohara
  • Patent number: 5504226
    Abstract: In the production of a 124-type or 123-type superconductor by a sol-gel method using alkoxides of respective metals, the use of a compound wherein a sec-butoxy group and a hydroxy group are coordinated with a copper atom gives a superconductor composed of flat particles having a broad C plane. The dimensional ratio defined by l/d is at least 6.7 in the case of the 124-type or is at least 8.4 in the case of the 123-type. It shows a superconducting property at a liquid nitrogen temperature. This superconductor shows a higher critical current density than one obtained by a sintering method.
    Type: Grant
    Filed: November 23, 1994
    Date of Patent: April 2, 1996
    Assignees: Kyocera Corporation, International Superconductivity Technology Center, Sanyo Electric Co., Ltd.
    Inventors: Shinichi Koriyama, Takaaki Ikemachi, Hisao Yamauchi
  • Patent number: 5496799
    Abstract: A method for making a rare earth superconductive composite which includes a matrix of REBa.sub.2 Cu.sub.3 O.sub.7-x grains and fine particles of RE.sub.2 BaCuO.sub.5 dispersed therein. The method includes a step of forming a compacted mass of powder particles of REBa.sub.2 Cu.sub.3 O.sub.7-x and powder particles of RE.sub.2 BaCuO.sub.5, each of which has an average diameter not greater than 6 .mu.m, and a maximum diameter not greater than 20 .mu.m. The compacted mass is heated to temperature higher than an incongruent melting temperature of the REBa.sub.2 Cu.sub.3 O.sub.7-x and lower than an incongruent melting temperature of RE.sub.2 BaCuO.sub.5, and is gradually cooled such that fine particles of RE.sub.2 BaCuO.sub.5 are dispersed in REBa.sub.2 Cu.sub.3 O.sub.7-x grains. The mass is annealed in an atmosphere containing oxygen.
    Type: Grant
    Filed: December 29, 1994
    Date of Patent: March 5, 1996
    Assignees: NGK Insulators, Ltd., International Superconductivity Technology Center
    Inventors: Manabu Yoshida, Izumi Hirabayashi
  • Patent number: 5474976
    Abstract: A method for producing an REBaCuO oxide superconductor having large magnetic levitation force, where RE is a rare earth element selected from the group consisting of Y, Sm, Eu, Gd, Dy, Ho, Er, and Yb, involves the steps of using a raw material mixture as the starting feed, heating the raw material mixture for partial melting, followed by cooling and solidification, pulverizing and mixing the resulting solid, shaping the resulting mixture into a given shape, placing or embedding nucleates on or in the resulting shape, followed by heating for partial melting, and cooling the resulting partial melt to a substantial temperature at which a superconducting phase starts to form, followed by slow cooling, whereby the superconducting phase is preferentially formed and grown from a nucleation site.
    Type: Grant
    Filed: March 29, 1993
    Date of Patent: December 12, 1995
    Assignees: International Superconductivity Technology Center, Kawasaki Jukogyo Kabushiki Kaisha, Hokuriku Electric Power Co., Nippon Steel Corporation
    Inventors: Akihiro Kondoh, Masato Murakami, Hiroshi Takaichi, Naoki Koshizuka, Shoji Tanaka, Shoichi Kagiya
  • Patent number: 5468806
    Abstract: Disclosed is a method of manufacturing a thin film of an oxide superconductor represented by formula Sr.sub.1-x Nd.sub.x CuO.sub.2 on a substrate. The oxide superconductor has a tetragonal crystal structure, the lattice constant in a-axis falling within a range of between 0.385 nm and 0.410 nm, and the lattice constant in c-axis being an integer number of times as much as a level falling within a range of between 0.310 nm and 0.350 nm. The method includes the steps of forming by epitaxial growth a film of a crystal having lattice constants close to those of the crystal of said oxide superconductor on a substrate, and forming a thin film of the oxide superconductor of a tetragonal crystal structure represented by general formula (I) by a thin film-forming technique.
    Type: Grant
    Filed: December 1, 1994
    Date of Patent: November 21, 1995
    Assignees: The Furukawa Electric Co., Ltd., Hitachi Ltd., Kabushiki Kaisha Toshiba, Central Research Institute of Electric Power Industry, International Superconductivity Technology Center
    Inventors: Kiyoshi Yamamoto, Nobuyuki Sugii, Koichi Kubo, Michiharu Ichikawa, Hisao Yamauchi
  • Patent number: 5468724
    Abstract: Disclosed herein are high-temperature oxide superconductors of RBa.sub.2 Cu.sub.4 O.sub.8 type, with Ba partly replaced by Sr or Ca, or with R and Ba partly replaced by Ca and Sr, respectively, as represented by the chemical composition formula of R(Ba.sub.1-y Sr.sub.y).sub.2 Cu.sub.4 O.sub.8 or R(Ba.sub.1-z Ca.sub.z).sub.2 Cu.sub.4 O.sub.8 or (R.sub.1-x Ca.sub.x) (Ba.sub.1-y Sr.sub.y).sub.2 Cu.sub.4 O.sub.8. They exhibit superconductivity at high temperatures. Especially, the last one exhibits superconductivity at a higher temperature than the former two. All of them can be made with a less amount of Ba as a deleterious substance, and the first two have improved sinterability. The best results are obtained when they are produced by the process involving the hot hydrostatic pressure treatment of the mixture of raw materials at 850.degree.-1100.degree. C. in an atmosphere composed of an inert gas and oxygen. The process permits a wider selection of Ba raw materials.
    Type: Grant
    Filed: May 27, 1993
    Date of Patent: November 21, 1995
    Assignees: International Superconductivity Technology Center, Matsushita Electric Industrial Co., Ltd., Kyocera Corporation, Mitsubishi Metal Corporation, The Tokyo Electric Power Company, Incorporated, Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Takahiro Wada, Shin-ichi Koriyama, Takeshi Sakurai, Nobuo Suzuki, Takayuki Miyatake, Hisao Yamauchi, Naoki Koshizuka, Shoji Tanaka
  • Patent number: 5466665
    Abstract: A method of manufacturing YBCO superconducting thin films is obtained which is capable of providing superconducting thin films having excellent crystallinity in a high yield by introducing a new film formation parameter in a hybrid plasma sputtering method. When a Y--Ba--Cu--O type superconducting thin film is formed by using a parallel plate sputtering method, a high-frequency voltage generated by a high-frequency power source is superimposed on a DC voltage generated by a DC power source and applied to the cathode electrode at the same time, an electrically conductive YBCO target is placed on the cathode, and the film formation conditions are controlled on the basis of the difference between the voltage drops in each ion sheath formed on the substrate and directly on the target by applying a DC voltage to a substrate holder from the DC power source.
    Type: Grant
    Filed: June 16, 1994
    Date of Patent: November 14, 1995
    Assignees: Mitsubishi Denki Kabushiki Kaisha, Nippon Steel Corporation, International Superconductivity Technology Center
    Inventors: Yukihisa Yoshida, Wataru Ito, Tadataka Morishita
  • Patent number: 5459124
    Abstract: A process for producing an oxide superconductor, comprising putting a formed body of raw material powders for forming an oxide superconductor on silver or silver oxide within a pan which does not melt at the melting point of silver, heating the pan to a temperature higher than the melting point of silver to bring the formed body to a semi-molten state with the formed body being floated on molten silver, cooling the pan and taking the formed body out of the re-solidified silver. This process enables a large bulk material having a diameter of 10 cm or more to be produced without occurrence of cracking.
    Type: Grant
    Filed: October 29, 1993
    Date of Patent: October 17, 1995
    Assignees: International Superconductivity Technology Center, Shinkoku Electric Power Co., Inc., Nippon Steel Corporation
    Inventors: Terutsugu Oyama, Masato Murakami, Naoki Koshizuka, Shoji Tanaka
  • Patent number: 5453306
    Abstract: The generation of a reaction product is suppressed between a metallic substrate and plasma in depositing a ceramic intermediate layer on the metallic substrate in a process for depositing an oxide film on the metallic substrate by thermal plasma flash evaporation method. Thus, there is no reaction phase in the ceramic intermediate layer and the metallic substrate, and an intermediated buffer layer of only oxide ceramic is deposited on a flat surface of the metallic substrate. The intermediate ceramic layer is deposited in inert atmosphere of a low oxygen concentration at a temperature of less than 600.degree. C. for the metallic substrate. Then, a superconducting thin film is deposited on the ceramic intermediate layer.
    Type: Grant
    Filed: June 30, 1994
    Date of Patent: September 26, 1995
    Assignees: International Superconductivity Technology Center, Hokkaido Electric Power Co., Inc., Fujikura Ltd., Tokyo Gas Co., Ltd., Hitachi Cable, Ltd.
    Inventors: Noriyuki Tatsumi, Jiro Tsujino, Atsushi Kume, Yuh Shiohara, Shoji Tanaka, Shigenori Yuhya, Kei Kikuchi
  • Patent number: 5446017
    Abstract: A superconductive oxide material having an infinite layer structure and having the following formula:A.sub.p B.sub.q Cu.sub.2 O.sub.4.+-.rwherein A and B are different and each represent an element selected from lanthanoid elements and elements belonging to Groups IA, IIA and IIIA of the Periodic Table, p is between 0.9 and 1.1, q is between 0.9 and 1.1 and r is between 0 and 0.6. The oxide material has a crystal structure belonging to a tetragonal system of P4/mmm and 1-123 having the following lattice parameters:3.8.ANG..ltoreq.a.ltoreq.4.0.ANG.7.6.ANG..ltoreq.c.ltoreq.8.0.ANG.or to an orthorhombic system of Pmmm and I-47 having the following lattice parmeters:3.8.ANG..ltoreq.a.ltoreq.3.95.ANG.3.82.ANG..ltoreq.b.ltoreq.4.0.ANG.7.6.ANG..ltoreq.c.ltoreq.8.0.ANG..
    Type: Grant
    Filed: April 12, 1993
    Date of Patent: August 29, 1995
    Assignees: Central Research Institute of Electric Power Industry, Tohoku Electric Power Co., Inc., International Superconductivity Technology Center
    Inventors: Takeshi Sakurai, Nobuyuki Sugii, Seiji Adachi, Michiharu Ichikawa, Yuji Yaegashi, Hisao Yamauchi, Masahiko Shimada, Hirotsugu Takizawa
  • Patent number: 5444039
    Abstract: The oxide superconductor according to the present invention is represented by (Hg.sub.1-x Pb.sub.x)Ba.sub.2 Ca.sub.2 Cu.sub.3 O.sub..delta. (0.08.ltoreq.x.ltoreq.0.41, 7.625.ltoreq..delta..ltoreq.9.15), and has a crystal structure in which a lamination unit of (Hg, Pb)O.sub.z -BaO-CuO.sub.2 -Ca-CuO.sub.2 -Ca-CuO.sub.2 -BaO is laminated in a c-axial direction of the crystal structure (0.625.ltoreq.z.ltoreq.2.15). Further, the method of manufacturing an oxide superconductor, according to the present invention, includes the steps of: mixing material powders of HgO, PbO, BaO, CaO and CuO at a mole ratio of (Hg.sub.1-x Pb.sub.x):Ba:Ca:Cu=a:2:b:c (1.ltoreq.a.ltoreq.2.5, 2.ltoreq.b.ltoreq.3, 2.5.ltoreq.c.ltoreq.4) and compression-molding the mixture powder into a compact; and subjecting the compact to a thermal treatment at 600.degree.-750.degree. C.
    Type: Grant
    Filed: September 12, 1994
    Date of Patent: August 22, 1995
    Assignees: Tohoku Electric Power Copany, Incorporated, Sumitomo Electric Industries, Ltd., Matsushita Electric Industrial Co., Ltd., International Superconductivity Technology Center
    Inventors: Kazuyuki Isawa, Ayako Yamamoto, Makoto Itoh, Seiji Adachi, Hisao Yamauchi
  • Patent number: 5434125
    Abstract: A rare earth oxide superconducting material represented by REBa.sub.2 2Cu.sub.3 O.sub.y (RE is Y, Gd, Dy, Ito, Er or Yb), comprises oxide grains and at least one element selected from Rh and Pt, uniformly dispersed in the grain in a proportion of 0.01-5% by weight (in terms of element) based on the rare earth oxide superconducting material. The rare earth oxide superconducting material can be produced by a melt processing and gives a high critical current density even in a highly magnetic field.
    Type: Grant
    Filed: June 8, 1994
    Date of Patent: July 18, 1995
    Assignees: International Superconductivity Technology Center, NGK Insulators, Ltd., Toyota Jidosha Kabushiki Kaisha
    Inventors: Naoyuki Ogawa, Takenobu Sakai, Izumi Hirabayashi
  • Patent number: 5430010
    Abstract: The present invention relates to a process for preparing an oxide superconductor having a high critical current density, a uniform structure and an excellent mechanical property and thermal stability, which comprises heating raw material powders of a REBaCuO system at 1050.degree. C. or higher, cooling the material for solidification, pulverizing and mixing the solidified material to homogeneously disperse the structure of the solidified material, molding the material, optionally mixed with silver oxide or silver, into a predetermined shape, and reheating the molding to 1050.degree. C. or higher to grow a superconducting phase.
    Type: Grant
    Filed: June 8, 1993
    Date of Patent: July 4, 1995
    Assignees: International Superconductivity Technology Center, Nippon Steel Corporation
    Inventors: Masato Murakami, Terutsugu Oyama, Hiroyuki Fujimoto, Naoki Koshizuka, Yu Shiohara, Shoji Tanaka
  • Patent number: 5421890
    Abstract: Disclosed is an oxide thin film producing method and apparatus for producing an oxide thin film having excellent crystallinity and purity with high productivity while correctly controlling the composition of the oxide thin film. After reducing the pressure inside a vacuum chamber to 1.times.10.sup.-9 Torr or less, a metal thin film is formed by evaporating a specified metal element and depositing vapor of the metal element on a substrate in the vacuum chamber. Then a cover member is moved upward to closely abut to a cover receiving member to thereby form an airtight chamber for enclosing the substrate airtightly in the vacuum chamber. With the degree of vacuum around the airtight chamber maintained, O.sub.2 gas is directly introduced into the airtight chamber through a gas piping to oxidize the metal thin film and thereby form an oxide thin film. At the same time, the gas inside the airtight chamber is discharged directly out of the vacuum chamber through a gas piping.
    Type: Grant
    Filed: July 29, 1993
    Date of Patent: June 6, 1995
    Assignees: International Superconductivity Technology Center, Sharp Kabushiki Kaisha, Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Ryusuke Kita, Takashi Hase, Masato Sasaki, Tadataka Morishita
  • Patent number: 5420103
    Abstract: A LnBaCuO-series superconducting thin film is provided over a surface of a substrate of Y.sub.2 O.sub.3 single crystal to form a composite superconductor. Ln stands for Y or a lanthanoid element. The composite superconductor has an improved interfacial diffusion.
    Type: Grant
    Filed: August 19, 1993
    Date of Patent: May 30, 1995
    Assignee: International Superconductivity Technology Center
    Inventors: Akira Oishi, Tadataka Morishita
  • Patent number: 5413988
    Abstract: An oxide superconductor thin film of Y.sub.1.+-..alpha. Ba.sub.2.+-..beta. Cu.sub.3.+-..gamma. O.sub.7-.delta. with a smooth surface having a low density of particles being generated without decreasing superconductivity is produced by the steps of applying a pulsed laser beam to the target formed of an oxide material having an apparent density of 95% or more, substantially composed of Y.sub.1.+-..alpha. Ba.sub.2.+-..beta. Cu.sub.3.+-..gamma. O.sub.7-.delta., which is obtained from a molded body of an amorphous powder by subjecting it to partial melting, followed by gradual cooling, depositing and accumulating an irradiated and evaporated oxide material of the target on a substrate.
    Type: Grant
    Filed: April 13, 1994
    Date of Patent: May 9, 1995
    Assignees: International Superconductivity Technology Center, Mitsubishi Materials Corporation
    Inventors: Kunihiko Hayashi, Shuichi Fujino, Youichi Enomoto, Shoji Tanaka