Abstract: The invention relates to a method for fabricating a semiconductor device having a semiconductor body that comprises a first semiconductor structure having a dielectric layer and a first conductor, and a second semiconductor structure having a dielectric layer and a second conductor, that part of the first conductor which adjoins the dielectric layer having a work function different from the work function of the corresponding part of the second conductor. In one embodiment of the invention, after the dielectric layer has been applied to the semiconductor body, a metal layer is applied to the said dielectric layer, and then a silicon layer is deposited on the metal layer and is brought into reaction with the metal layer at the location of the first semiconductor structure, forming a metal silicide.

Abstract: A method for producing probes for atomic force microscopy comprises producing, on a surface of one side of a semiconductor substrate, one or more moulds for the production of one or more probe tips. One or more probe configurations and at least one set of a probe tip and a cantilever are also produced on the side of the substrate, wherein each configuration comprises a contact region for attachment of a holder. The surface area of each contact region is smaller in size than the surface area of the holder. The method further includes attaching one or more holders to the contact region(s), and releasing the probe configuration and the holder from the substrate by under-etching the probe configuration from the side of the substrate on which the probe configuration is produced.

Abstract: The present invention is related to the realization of a simplified bottom electrode stack for ferroelectric memory cells. More particularly, the invention is related to ferroelectric memory cells wherein the ferroelectric capacitor is positioned directly on top of a contact plug.