Patents Assigned to Invarium, Inc.
  • Publication number: 20060228041
    Abstract: An apparatus and method for optical lithography verification includes filtering a lithography simulation of proposed sub-lightwave pattern formations during at least one design phase or manufacturing phase of an article of manufacture having sub-lightwave structures and then detecting design phase or manufacturing phase defects in response to the filtering of the lithography simulation.
    Type: Application
    Filed: April 9, 2005
    Publication date: October 12, 2006
    Applicant: Invarium, Inc.
    Inventor: Devendra Joshi
  • Publication number: 20060143589
    Abstract: A hierarchical representation encapsulates the detailed internal composition of a sub-circuit using the notion of a cell definition (a CellDef). The CellDef serves as a natural unit for operational reuse. If the computation required for the analysis or manipulation (e.g. parasitic extraction, RET, design rule confirmation (DRC), or OPC) based on a CellDef or one cell instance can be applied, with no or minimal additional effort, to all or a significant subset of other instances of the cell, very substantial reduction in computational effort may be realized. Furthermore, a hierarchical representation also allows for the partitioning of the overall analysis/manipulation task into a collection of subtasks, e.g. one per CellDef. Multiple jobs may then be distributed across a large number of computational nodes on a network for concurrent execution. While this may not reduce the aggregate computational time, a major reduction in the overall turnaround time (TAT) is in itself extremely beneficial.
    Type: Application
    Filed: December 23, 2004
    Publication date: June 29, 2006
    Applicant: Invarium, Inc.
    Inventors: Chi-Song Horng, Devendra Joshi, Anwei Liu
  • Publication number: 20060075379
    Abstract: A method for modifying instances of a repeating pattern in an integrated circuit design to correct for perturbations during rendering is described. In the typical embodiment, these corrections are optical proximity corrections that correct for optical effects during the projection of the mask pattern onto the wafer and/or processing effects for example photoresist response and etching effects. The method comprises determining a correction for the repeating pattern based on a first set of tolerances for features of the repeating pattern. Then, the suitability of the corrections is evaluated for instances of the repeating pattern in the integrated circuit design based on a second set of tolerances, which is different from the first set of tolerances. This can be used to preserve much of the hierarchy of the layout data in the corrected, or lithography, data. This can be achieved during the OPC process, thus avoiding the post OPC compaction.
    Type: Application
    Filed: September 30, 2004
    Publication date: April 6, 2006
    Applicant: Invarium, Inc.
    Inventor: Vishnu Kamat
  • Publication number: 20060075371
    Abstract: A method and apparatus for partitioning of the input design into repeating patterns called template cores for the application of reticle enhancement methods, design verification for manufacturability and design corrections for optical and process effects is accomplished by hierarchy analysis to extract cell overlap information. Also hierarchy analysis is performed to extract hierarchy statistics. Finally template core candidates are identified. This allows to the design to be made amenable for design corrections or other analyses or modifications that are able to leverage the hierarchy of the design since the cell hierarchy could otherwise be very deep or cells could have significant overlap with each other.
    Type: Application
    Filed: September 30, 2004
    Publication date: April 6, 2006
    Applicant: Invarium, Inc.
    Inventor: Vishnu Kamat
  • Publication number: 20060048091
    Abstract: A method and system for reducing the computation time required to apply position-dependent corrections to lithography, usually mask, data is disclosed. Optical proximity or process corrections are determined for a few instances of a repeating cluster or object, usually at widely separated locations and then interpolating the corrections to the other instances of the repeating cluster based on their positions in the exposure field. Or, optical proximity corrections can be applied to the repeating cluster of objects for different values of flare intensity, or another parameter of patterning imperfection, such as by calculating the value of the flare at the location of each instance of the repeating cluster, and interpolating the optical proximity corrections to those values of flare.
    Type: Application
    Filed: September 1, 2004
    Publication date: March 2, 2006
    Applicant: Invarium, Inc.
    Inventors: Devendra Joshi, Abdurrahman Sezginer, Franz Zach