Abstract: A pixel circuit may comprise: a first transistor having a first terminal connected to a data line and to which a data signal is applied and a gate terminal connected to a scan line and to which a scan signal is applied; a third transistor having a gate terminal connected to a second terminal of the first transistor and a second terminal connected to a light emitting device; a capacitor having a second terminal commonly connected to the second terminal of the first transistor and the gate terminal of the third transistor; and a second transistor having a second terminal commonly connected to a first terminal of the capacitor and a first terminal of the third transistor, a first terminal connected to a first power supply voltage, and a gate terminal connected to an emission line to which an emission signal is applied.

Abstract: Disclosed is a three-dimensional flash memory using a ferroelectric layer on the basis of a back gate structure.

Abstract: The present invention relates to a novel violaxanthin-overproducing strain of Chlorella vulgaris and a method of producing violaxanthin therefrom. The inventors have developed a strain that produces violaxanthin at a significantly higher level than a wild-type strain by inducing a random chemical mutation in a Chlorella vulgaris strain to, and then as a result of analysis, confirmed that the strain produces violaxanthin up to 0.41% based on dry weight, which reaches the highest level that is possible to be produced in microalgae. Furthermore, as a method of effectively extracting a carotenoid pigment containing violaxanthin from the strain was established, since the strain and the developed pigment extraction method according to the present invention allow effective production and separation of violaxanthin, the strain is expected to increase commercial applications such as cosmetics, health functional foods and feed.

Abstract: A magnetic field control system according to an embodiment of the present invention may comprise: a structure forming part for forming a three-dimensional structure having an inner space; a magnetic field generating part for generating a magnetic field, the magnetic field generating part being formed to extend from a predetermined position of the structure forming part and being disposed to face a target region defined in the inner space; and a power source part for supplying electric power to the magnetic field generating part.

Abstract: An apparatus for controlling a variable magnetic flux motor, wherein the variable magnetic flux motor includes a rotor in which a permanent magnet and a conductor bar are arranged, includes an inverter configured to apply a stator current to a stator coil of the motor, and a control unit configured to control a torque of the conductor bar and magnetize or demagnetize the permanent magnet by controlling the stator current through the inverter.

Abstract: A three-dimensional flash memory for improving leakage current and a substrate are disclosed. The three-dimensional flash memory comprises: a string extending in one direction on the substrate, wherein the string includes a channel layer extending in the one direction and a charge storage layer extending in the one direction so as to surround the channel layer; at least one selection line vertically connected to an upper end or a lower end of the string; and a plurality of word lines positioned above or below the at least one selection line and vertically connected to the string, wherein the channel layer is formed of an oxide semiconductor material.

Abstract: The present invention relates to a three-dimension flash memory to which an efficient word line connection structure is applied, and a method for manufacturing same, wherein a plurality of word lines are connected to a low decoder respectively through contacts of the plurality of word lines, a plurality of connection wires, and plug vias of the plurality of word lines. The row decoder and a column decoder are arranged to divide a plurality of peripheral circuit blocks such that the plurality of peripheral circuit blocks are symmetrical to each other in the plane of the three-dimensional flash memory. The three-dimension flash memory is configured in a buried type in which a common source line is buried in a substrate, in order to improve integration density.

Abstract: The present disclosure relates to a message transmission requesting apparatus and method for requesting message transmission from a terminal located within a predetermined range from the message transmission requesting apparatus, a message transmission management server, and a base station. Specifically, the message transmission requesting apparatus comprises: an uplink resource allocation information acquisition unit for acquiring uplink resource allocation information; at least one uplink signal reception unit for receiving an uplink signal on the basis of the uplink resource allocation information; a control unit for determining, on the basis of the uplink signal, information on a terminal which has transmitted the uplink signal, the information including identifier information of the terminal and location information of the terminal; and a message transmission request unit for transmitting the information on the terminal to a base station.

Abstract: A positive active material for a lithium-sulfur battery is provided. The positive active material for a lithium-sulfur battery includes carbon layers and metal compound layers alternately and repeatedly stacked. Each of the metal compound layers includes molybdenum and sulfur. Sulfur of the positive active material for a lithium-sulfur battery is provided from the metal compound layer through a preliminary charge/discharge process.

Abstract: A layer forming method according to one embodiment of the present invention contains a source gas dosing/pressurizing step of dosing a source gas into a chamber having a substrate loaded therein in a state in which the outlet of the chamber is closed, thereby increasing the pressure in the chamber and adsorbing the source gas onto the substrate; a first main purging step of purging the chamber, after the source gas dosing/pressurizing step; a reactive gas dosing step of dosing a reactive gas into the chamber, after the first main purging step; and a second main purging step of purging the chamber, after the reactive gas dosing step.

Abstract: The present invention relates to an intermediate for preparing porous silicon oxycarbide, a method of preparing the same, and a lithium secondary battery including porous silicon oxycarbide prepared from the same as a negative electrode active material. According to the present invention, since an intermediate prepared by adding a polyhedral oligomeric silsesquioxane (POSS) to a reaction mixture for preparing silicon oxycarbide, which is composed of a polysiloxane polymer and an aromatic compound, is pyrolyzed to prepare porous silicon oxycarbide (SiOC), although the content of a free carbon region is lower compared to conventional silicon oxycarbide, the cage structure of the POSS is maintained in the pyrolysis to form many pores uniformly distributed in the SiOC matrix, and thus rapid diffusion of electrolyte ions is possible, and because the contents of SiO3C and SiO2C2 in the SiOC matrix are increased, a reversible capacity in the Si—O—C phase can be enhanced.

Abstract: A light sintering device is provided. The light sintering device can comprise: a housing having, therein, a cooling hollow portion in which cooling water flows; a beam guide mounted on one side of the housing so as to form one wall of the cooling hollow portion, and guiding sintered light; and an optical filter mounted on the other side of the housing so as to face the beam guide, thereby forming the other wall of the cooling hollow portion, and filtering out a specific wavelength of the sintered light.

Abstract: A through silicon via (TSV)-based three-dimensional flash memory having a high degree of integration comprises: at least one memory cell string chip including a plurality of memory cell strings; and a peripheral circuit chip including at least one peripheral circuit, wherein the peripheral circuit chip is arranged below the at least one memory cell string chip and is connected to the at least one memory cell string chip by using at least one TSV. The at least one memory cell string chip includes the plurality of memory cell strings, and the peripheral circuit chip is connected to the at least one peripheral circuit. The peripheral circuit chip is connected to the at least one memory cell string chip by using the at least one TSV extending through the at least one memory cell string chip.

Abstract: A thin-film transistor comprises a substrate; an insulating layer formed on the substrate; an active layer formed on the insulating layer; and source and drain electrode layers formed on the active layer so as to be spaced from each other, wherein the active layer comprises: a first oxide semiconductor layer consisting of In, Ga and O; and a second oxide semiconductor layer which is formed on the first oxide semiconductor layer and which consists of Zn and O. The thin-film transistor having metal oxide semiconductor layers of a heterojunction structure has greatly improved electron mobility by comprising, as an active layer, oxide semiconductor layers of a heterojunction structure. In addition, the physical properties of a thin-film transistor to be manufactured can be controlled by adjusting the composition and thickness of oxide semiconductor layers through an atomic layer deposition (ALD) process.

Abstract: Provided is a pellicle thermal durability evaluation device. The pellicle thermal durability evaluation device may comprise: a chamber; a pellicle holder which is disposed in the chamber and on which a pellicle is seated; a durability measurement unit including a temperature measurement module for measuring the temperature of the pellicle seated on the pellicle holder; and a light source unit which irradiates the pellicle by controlling the intensity of light according to the type of the pellicle seated on the pellicle holder.

Abstract: Disclosed are an exclusive OR (XOR) operation learning probability of a multivariate nonlinear activation function and a practical application method thereof. A learning method of an activation function performed by a computer device may include constructing an inner network using a multivariate nonlinear activation function; and training a combination model generated by merging the constructed inner network and an outer network.

Abstract: A recommendation method performed by a recommendation system in a multiple-class collaborative filtering environment includes learning pre-use preference and post-use preference by a plurality of teachers; selecting items to be transferred to a student model by predicting pre-use preference for items unobserved by a user based on the learned pre-use preference; determining a soft label based on post-use preference, which is predicted for the selected items based on the learned post-use preference; and transferring the determined soft label to the student model as distilled knowledge, and recommending, by the student model, items having high pre-use preference and high post-use preference based on the received distilled knowledge.

Abstract: A device for AI-based vehicle diagnosis using CAN data may include an engine; a vibration sensor mounted in an engine compartment in which the engine is mounted and configured for detecting a vibration signal; and a controller area network (CAN) communicating with one or more of an environmental condition, a vehicle status, an engine status, and an engine control parameter, wherein data preprocessing from the vibration sensor and the CAN is performed to determine features in which correlation between vibration data (dB) exceeding a threshold value of irregular vibrations being generated by the engine and the CAN data is equal to or greater than 90%.

Abstract: The present invention relates to a precursor composition for a polymer electrolyte including two types of crosslinking agents and a gel polymer electrolyte formed therefrom.

Abstract: Embodiments provide a slurry for polishing copper, a manufacturing method of a display device which uses the slurry, and the display device. The slurry for polishing copper includes an abrasive, a catalyst including a single molecule having an iron ion, a polishing suppressant, and an oxidizing agent.