Abstract: A method and apparatus, for supplying high-pressure mixed gas of a low-vapor-pressure first gas as an active gas and a high-vapor-pressure second gas, are arranged to reduce an amount of the first gas discarded. The mixed gas in a high-pressure state is supplied from a mixing container to a use point. Upon reduction of pressure in the mixing container to a setpoint as a result of supply to the use point, a predetermined amount of the first gas is charged into a replenishment container connected to the mixing container by a replenishment line having a replenishment valve, and which is evacuated. As the second gas is charged into the replenishment container charged with the first gas, the replenishment valve is opened such that the first gas in the replenishment container is forced out by the second gas, thereby charging the mixing container with the mixed gas in the high-pressure condition.

Abstract: Provided is a means for fixing calcium phosphate onto the surface of a metal by a treatment method which uses no acid and produces less residue. A method of producing a calcium phosphate composite in which calcium phosphate is bonded to the surface of a base material, the method including a surface treatment step of bringing the surface of the base material into contact with a surface treating agent, and then into contact with a silane coupling agent, to surface treat the base material; a polymerization step of initiating, after the surface treatment step, polymerization of the silane coupling agent by means of a polymerization initiator; and a bonding step of bonding the silane coupling agent at the surface of the base material after the polymerization step, with calcium phosphate; wherein the base material is a metal, and the surface treating agent is ozone water.

Abstract: A film forming method for obtaining a thin film by laminating molecular layers of oxide on a surface of a substrate in a vacuum atmosphere includes performing a cycle a plurality of times. The cycle includes: supplying a source gas containing a source to the substrate in a vacuum vessel to adsorb the source onto the substrate; forming an ozone atmosphere containing ozone having a concentration not less than that where a chain decomposition reaction is caused in the vacuum vessel; and forcibly decomposing the ozone by supplying energy to the ozone atmosphere to generate active species of oxygen, and oxidizing the source adsorbed onto the surface of the substrate by the active species to obtain the oxide.

Abstract: Provided is a method for treating the inner surface of a chlorine trifluoride supply passage that enables reliable prevention of the reduction in the concentration of ClF3 in a reaction chamber during process operation. The method includes: integrally connecting a gas supply passage (2) and a gas discharge passage (3) to a processing chamber (1) of a processing apparatus in which chlorine trifluoride is used as an etching gas; and applying chlorine trifluoride gas having a concentration equal to or higher than the concentration of chlorine trifluoride gas supplied during etching process operation on inner surfaces of at least the processing chamber (1) and the gas supply passage (2) among the processing chamber (1), the gas supply passage (2), and the gas discharge passage (3), which are integrally formed, to coat the inner surfaces of at least the processing chamber (1) and the gas supply passage (2) with a fluoride film.

Abstract: A suction method that sucks inside of a filling nozzle used for supply of hydrogen by using a suction nozzle that is engaged with the filling nozzle, the suction method comprising: evacuating a vacuum chamber by using a vacuum pump; and sucking inside of the suction nozzle by using the evacuated vacuum chamber.

Abstract: A substrate cleaning apparatus includes a supporting unit, provided in a processing chamber having a gas exhaust port, for supporting a substrate; one or more nozzle units, each for ejecting gas clusters to a peripheral portion of the substrate supported by the supporting unit to remove unnecessary substances from the peripheral portion; and a moving mechanism for changing relative positions of the supporting unit and the nozzle unit during ejecting the gas clusters. Each nozzle unit discharges a cleaning gas having a pressure higher than that in the processing chamber so that the cleaning gas is adiabatically expanded to form aggregates of atoms and/or molecules.

Abstract: A substrate cleaning method includes removing a foreign material attached to a substrate while preventing deterioration of the substrate and any film formed on or above the substrate. A cleaning gas at a pressure between 0.3 MPa and 2.0 MPa is sprayed towards a wafer W with attached foreign material 22 placed in a near-vacuum, producing clusters 21 made up of a multitude of gas molecules 20, and the clusters 21 collide with the wafer W without undergoing ionization.

Abstract: A substrate cleaning device is capable of removing more diverse contaminants from substrates than ultra-low temperature aerosol ejection, while avoiding technical problems inherent to wet cleaning, such as micro-roughness, watermarks, loss of substrate material and destruction of the device structure. A substrate cleaning device for cleaning wafers to which cleaning target objects have adhered includes a cluster spraying unit which sprays the wafer with one or more types of clusters formed of cleaning preparation molecules agglomerated together, a suction unit which sucks the cleaning target objects separated by spraying the clusters of the cleaning agent molecules; and a unit for moving the wafer and the cluster spraying unit relative to the one another along the surface of the wafer W to which the cleaning target objects have adhered.

Abstract: The disclosed device and method produce high concentration ozonated water by connecting a high concentration ozone gas-supplying system that comprises an ozone gas-generating unit (1) for forming ozone gas, an ozone gas-concentrating unit (2) for concentrating the ozone gas formed, a concentrated ozone gas-pressurizing unit (3) for pressurizing the concentrated ozone gas output from the ozone gas-concentrating unit (2), and a cooling mechanism (13) for cooling the concentrated ozone gas-pressurizing unit (3), to an ozone gas-dissolving unit (4) to dissolve the high pressure, concentrated ozone gas in pure water and produce the high concentration ozonated water.

Abstract: A method for producing nickel nanoparticles is described, including a first step of heating a mixture of a nickel carboxylate with 1-12 carbon atoms in its moiety excluding —COOH and a primary amine to obtain a complexed reaction solution with a nickel complex foiiiied therein, and a second step of heating the complexed reaction solution by a microwave to obtain a Ni-nanoparticle slurry. In the first step, the heating is preferably conducted at a temperature of 105-175° C. for 15 minutes or longer. In the second step, the heating is preferably conducted at a temperature of 180° C. or higher.

Abstract: A structure which performs safety operation with certainty when a gas container is replaced or when an abnormality occurs and is easy to used is provided. A cartridge-type gas grill 11 having a plurality of systems includes two gas container accommodation sections 12; two burners 13; and gas flow paths for connecting the gas container accommodation sections 12 and the burners 13 in a one-to-one relationship. All the gas container accommodation sections 12 are each provided with a container attachment switch 19 for detecting that a gas container 15 is connected. Open/close valves 18, provided in the gas flow paths, for adjusting a gas flow are each formed of an electromagnetic valve. Operation knobs 63 each for making an operation on the corresponding open/close valve 18 are each provided with an ignition switch 20, which is turned ON when the corresponding open/close valve 18 is opened and is turned OFF when the corresponding open/close valve 18 is closed.

Abstract: Provided is a method for treating the inner surface of a chlorine trifluoride supply passage that enables reliable prevention of the reduction in the concentration of ClF3 in a reaction chamber during process operation. The method includes: integrally connecting a gas supply passage (2) and a gas discharge passage (3) to a processing chamber (1) of a processing apparatus in which chlorine trifluoride is used as an etching gas; and applying chlorine trifluoride gas having a concentration equal to or higher than the concentration of chlorine trifluoride gas supplied during etching process operation on inner surfaces of at least the processing chamber (1) and the gas supply passage (2) among the processing chamber (1), the gas supply passage (2), and the gas discharge passage (3), which are integrally formed, to coat the inner surfaces of at least the processing chamber (1) and the gas supply passage (2) with a fluoride film.

Abstract: A method of concentrating ozone gas including: causing ozone gas contained in ozone-oxygen mixture gas to be selectively adsorbed to adsorbents which are filled in a non-cooled state in at least two adsorbing cylinders arranged parallel to one another; desorbing the ozone gas from the adsorbents by subjecting a depressurizing process to each adsorbing cylinder during an ozone gas desorption operation; repeating an adsorption step and a desorption step alternately in the at least two adsorbing cylinders; and controlling the adsorbing cylinders, in such a way that one of the adsorbing cylinders is performing the adsorption step while another one of the adsorbing cylinders is performing the desorption step.

Abstract: In a substrate wiring method, copper is embedded all the way to the lowest parts of a wiring pattern formed on a substrate. The method is used to wire a substrate in a processing chamber kept in a vacuum state, the substrate having a wiring pattern formed thereon. The method includes a preprocessing step in which the wiring pattern on the substrate is cleaned using a desired cleaning gas and an embedding step in which, after the preprocessing step, metal nanoparticles are embedded in the wiring pattern using a clustered metal gas.

Abstract: Combustible gas, which is easy to be stored, transported and the like and can contribute to improving the quality of a finished state of an operation such as gas cutting, gas welding or brazing, contains ethylene at 38 v/v % or more and 45 v/v % or less and the remainder being hydrogen and unavoidable impurity.

Abstract: A processing method having excellent processing performance at a low flow rate is provided. A method for processing a surface of a sample uses reactive clusters produced by adiabatic expansion of a gas mixture ejected from a nozzle into a vacuum processing chamber. The gas mixture contains a reactive gas chlorine trifluoride, a first inert gas argon, and a second inert gas xenon. The gas mixture in an inlet of the nozzle has a pressure of 0.4 MPa (abs) or more. The reactive gas constitutes 3% by volume or more and 10% by volume or less. The first inert gas constitutes 40% by volume or more and 94% by volume or less. The second inert gas constitutes 3% by volume or more and 50% by volume or less of the gas mixture.

Abstract: Combustible gas, which is easy to be stored, transported and the like and can contribute to improving the quality of a finished state of an operation such as gas cutting, gas welding or brazing, contains ethylene at 38 v/v % or more and 45 v/v % or less and the remainder being hydrogen and unavoidable impurity.