Abstract: Provided is a highly safe lithium-ion secondary battery with a gradual voltage decrease, high charge/discharge capacity, and ease of handling, in which explosion due to expansion, heat generation, ignition, and the like is prevented. A non-stoichiometric titanium compound represented by a chemical formula Li4+xTi5?xO12 (where 0<x<0.30), a non-stoichiometric titanium compound represented by a chemical formula Li4+xTi5?x?yNbyO12 (where 0<x<0.30, 0<y<0.20), and carbon-composite non-stoichiometric titanium compounds Li4+xTi5?xO12/C (where 0<x<0.30) and Li4+xTi5?x?yNbyO12/C (where 0<x<0.30, 0<y<0.20) obtained by applying a carbon composite-forming process thereto, an active material of negative electrode for a lithium-ion secondary battery using the compound, and a lithium-ion secondary battery using the active material of negative electrode.

Abstract: A magnesium boride thin film having a B-rich composition represented by the general formula of MgBx (x=1 to 10) and a superconducting transition temperature of 10K or more has superior crystallinity and orientation and is used as a superconducting material. This thin film is formed by maintaining a film forming environment in a high vacuum atmosphere of 4×10?5 Pa or less, and simultaneously depositing Mg and B on a substrate maintained at a temperature of 200° C. or less so as to grow the film at a growth rate of 0.05 nm/sec or less. It is preferable to supply an Mg vapor and a B vapor into the film forming environment at an Mg/B molar ratio of 1/1 to 12/1.

Abstract: A photovoltaic ultraviolet sensor comprises a zinc oxide single crystal substrate. On the +c face of the zinc oxide single crystal substrate, an ultraviolet receiver is formed. The exemplary ultraviolet receiver includes a Schottky electrode which, when receiving ultraviolet rays, produces a voltage in cooperation with the zinc oxide single crystal substrate. The ultraviolet sensor does not have any sensitivity to the visible rays. The ultraviolet sensor has a relatively fast response of several microseconds.

Abstract: Disclosed is a semiconductor light-emitting device wherein a pn junction is formed by forming, as a p-type layer (11), a semiconductor thin film which is composed of a ZnO compound doped with nitrogen on an n-type ZnO bulk single crystal substrate (10) whose resistance is lowered by being doped with donor impurities. It is preferable to form the p-type layer (11) on a zinc atom containing surface of the n-type ZnO bulk single crystal substrate (10).

Abstract: The laser projector system draws vector-oriented graphic by scanning laser beam with the X-Y scanner, and comprises: a laser source (201) for projecting laser beam; a galvanometer scanner (202) for scanning laser beam with the X-Y mirror (203) to freely control the direction of laser beam; a scanner amp (205) for controlling projection output of laser beam; a scanner controller (204) for controlling the galvanometer scanner and the scanner amp; and a computer (207) connected to the scanner controller (204).

Abstract: The invention provides a flake graphite cast iron being highly strong and excellent in workability such as cutting performance, which is suitable for use, for example, in internal combustion engine parts and the like, and a production method thereof without using a misch metal. Specifically, the flake graphite cast iron according to the invention includes an A-type graphite with a uniformly and disorderly distributed existence form without directionality; and has a chemical composition containing 2.8 to 4.0 mass % of C, 1.2 to 3.0 mass % of Si, 1.1 to 3.0 mass % of Mn, 0.01 to 0.6 mass % of P, 0.01 to 0.30 mass % of S and the remainder being Fe and inevitable impurities, wherein the ratio (Mn/S) of the Mn content to the S content is within a range of 3 to 300.

Abstract: The invention provides a secondary battery that has good adhesion between a thin substrate and an active material, is thinner and lighter in weight, has flexibility, and has excellent charge/discharge characteristics, and a method of manufacturing the secondary battery. The secondary battery includes a cell having, in order, a positive electrode active material layer, an electrolyte layer, and a negative electrode active material layer, or a cell having, in order, a negative electrode active material layer, an electrolyte layer, and a positive electrode active material layer, wherein the cell is formed on a conductive thin substrate having a surface roughness RMS of 0.8 ?m or less.

Abstract: A neuronal cell death induced by an oxidative glutamate toxicity is substantially inhibited by administrating to an mammal an effective amount of a phenylenediamine derivative compound of formula (I), wherein R is phenyl or butyl.

Abstract: A large-scale sound system or communication system is numerically and stably identified. When an input signal is represented by the M(?N)-th order AR model, high-speed H? filtering can be performed with a computational complex 3N+O(M). A processing section determines the initial state of a recursive equation (S201), sets CUk according to an input uk (S205), determines a variable recursively (S207), updates a matrix GkN, calculates an auxiliary gain matrix KUkN (S209) divides it (S211), calculates a variable DkM and a backward prediction error ?M, k (S213), calculate a gain matrix Kk (S215), and updates a filter equation of a high-speed H? filter (S217). To reduce the computational complexity, Kk(:, 1)/(1+?f Hk Kk (:, 1)) is directly used as the filter gain Ks, k.

Abstract: This is to provide an all solid state secondary battery which can be produced by an industrially employable method capable of mass-production and has excellent secondary battery characteristics.

Abstract: Disclosed is a semiconductor light-emitting device wherein a pn junction is formed by forming, as a p-type layer (11), a semiconductor thin film which is composed of a ZnO compound doped with nitrogen on an n-type ZnO bulk single crystal substrate (10) whose resistance is lowered by being doped with donor impurities. It is preferable to form the p-type layer (11) on a zinc atom containing surface of the n-type ZnO bulk single crystal substrate (10).

Abstract: [Object] Various electric wave absorbers for the GHz band have been developed. However, parameters for obtaining the optimal electric wave absorption characteristic are only the shape and the content of a dielectric material or a conductive material, and the degree of freedom of the parameters has been small. Furthermore, in a recent wireless LAN, electric wave absorbers that can be used for absorbing potentially dangerous electric waves in a plurality of bands, for example, in two frequency bands of 2.45 GHz band and 5.2 GHz band, have also been desired.

Abstract: A magnesium boride thin film having a B-rich composition represented by the general formula of MgBx (x=1 to 10) and a superconducting transition temperature of 10K or more has superior crystallinity and orientation and is used as a superconducting material. This thin film is formed by maintaining a film forming environment in a high vacuum atmosphere of 4×10?5 Pa or less, and simultaneously depositing Mg and B on a substrate maintained at a temperature of 200° C. or less so as to grow the film at a growth rate of 0.05 nm/sec or less. It is preferable to supply an Mg vapor and a B vapor into the film forming environment at an Mg/B molar ratio of 1/1 to 12/1.

Abstract: This invention provides a technique for rendering bio-toxicity such as allergy toxicity derived from Ni trace impurity, i.e., nickel toxicity, which is unavoidably present in a bio-Co—Cr—Mo alloy or an Ni-free stainless steel alloy unharmful, characterized in that an element selected from the group consisting of the group 4, 5 and 13 elements of the periodic table, particularly an element selected from the group consisting of the group 4 elements of the periodic table, is added to the alloy composition. The additive element is preferably an element selected from the group consisting of zirconium and titanium, more preferably zirconium.

Abstract: The temperature of a predetermined object is controlled by feedback control that uses the temperature control algorithm of a homeothermic plant.

Abstract: A neuronal cell death induced by an oxidative glutamate toxicity is substantially inhibited by administrating to an mammal an effective amount of a phenylenediamine derivative compound of formula (I), wherein R is phenyl or butyl.

Abstract: A nondestructive evaluating method for aged deterioration in austenitic stainless steel comprises an information obtaining step for previously obtaining a relationship between an applied stress ? and the first ratio Ms/?H* between a saturation magnetization Ms and a pseudo susceptibility ?H* based on reference minor hysteresis loops obtained by applying stresses ?, respectively, correspondingly to a result of a tensile test for the same kind of material as an evaluation target. In a measuring step, values of the first ratio Ms/?H* are obtained as measured values from measured minor hysteresis loops obtained by measuring the evaluation target. In an evaluating step, the relationship between the applied stress ? and the first ratio Ms/?H* is compared with the measured values, thereby evaluating aged deterioration of the evaluation target. The minor loops are obtained by stepwise changing a magnetic field amplitude Ha within a range of a magnetic field intensity lower than a saturation magnetization.

Abstract: A photovoltaic ultraviolet sensor comprises a zinc oxide single crystal substrate. On the +c face of the zinc oxide single crystal substrate, an ultraviolet receiver is formed. The exemplary ultraviolet receiver includes a Schottky electrode which, when receiving ultraviolet rays, produces a voltage in cooperation with the zinc oxide single crystal substrate. The ultraviolet sensor does not have any sensitivity to the visible rays. The ultraviolet sensor has a relatively fast response of several microseconds.

Abstract: Aged deterioration of ferromagnetic construction materials is nondestructively evaluated by applying to an evaluating material a magnetic field whose magnetic field amplitude is rather low, distinguishing various lattice defects, and quantifying them separately. A method includes obtaining a stress-strain relation in advance by a tensile test, evaluating a minor hysteresis loop (reference minor loop) while applying an applied stress (?) thereto, obtaining correlation between physical quantities for evaluating aged deterioration, obtaining a subject minor hysteresis loop (subject minor loop) by a tensile test, obtaining measured values of the physical quantities from the loop, and evaluating aged deterioration of the evaluating material from the measured values.

Abstract: This invention is a method for nondestructively determining the deterioration of determining ferromagnetic materials by quantifying the change in brittleness with aging of the materials. This invention supposes acquirement of an embrittlement coefficient b by measuring a magnetic susceptibility &khgr;b of ferromagnetic materials under a magnetic field having a specified intensity H. And the coefficient b of the ferromagnetic materials is calculated by putting the intensity H and the susceptibility &khgr;b into an equation: b=&khgr;bH2. By the coefficient b, a correlation between the coefficient b and a referenced embrittlement factor of materials like said determining materials is obtained previously. The coefficient b of the determining materials in the initial and the deteriorated states is acquired. The factor corresponding to the coefficient b is obtained from the correlation. It is possible to quantify the change by comparing the values of the factor in the initial and deteriorated states.