Abstract: An electrostatic discharge (ESD) protection system of a micro device is disclosed in the present disclosure. The ESD protection system includes: a pixel driver circuit electrically connected to at least one micro LED pixel for controlling the turning-on or off of the micro LED pixel; and a first ESD protective unit configured in an external circuit outside the pixel driver circuit. The first ESD protective unit comprises at least a unidirectional transient voltage suppressor. The cathode of the unidirectional transient voltage suppressor is connected to a first level voltage, and the anode of the unidirectional transient voltage suppressor is connected to the second level voltage. The micro LED pixel is connected to the second level voltage. The present disclosure can protect the micro LED pixel from being damaged by the electrostatic discharge. Various embodiments include an ESD protection system of a display panel with a micro-LED pixel array.

Abstract: An electrostatic discharge (ESD) protection system of a micro device is disclosed in the present disclosure. The ESD protection system comprises: a pixel driver circuit, electrically connected to at least one micro LED pixel for controlling the turning-on or off of the micro LED pixel, wherein the micro LED pixel is electrically connected to a second level voltage (Vcom): a first ESD clamp, electrically connected to a first level voltage (Vdd) and the second level voltage (Vcom); and, a second ESD clamp, electrically connected to a third level voltage (Vss) and the second level voltage (Vcom). The present disclosure can protect the micro LED pixel from being damaged by the electrostatic discharge. Various embodiments include an ESD protection system of a display panel with a micro-LED pixel array.

Abstract: A micro LED panel having a micro LED array and the system and method to manufacture the micro LED panel are provided. The micro LED array includes at least one micro LED structure. The micro LED structure at least includes: a mesa structure and a re-growth layer (04). The re-growth layer (04) is grown on at least part of the sidewall of the first type epitaxial layer (01) and on the whole sidewall of the light emitting layer (03), thereby decreasing the non-radiation recombination on the sidewall of the mesa structure and improving the light emitting efficiency.

Abstract: A micro LED panel having a micro LED array and the system and method to manufacture the micro LED panel are provided in the present disclosure. The micro LED array includes at least one micro LED structure. The micro LED structure at least includes: a mesa structure and a re-growth layer. In some embodiments, the mesa structure comprises a light-emitting layer. In some embodiments, the re-growth layer is grown at least on the sidewall of the light-emitting layer. The re-growth layer is not parallel to the extending direction of the light-emitting layer.

Abstract: A micro LED panel having a micro LED array and the system and method to manufacture the micro LED panel are provided by the present disclosure. The micro LED array includes at least one micro LED structure. The micro LED structure at least includes: a mesa structure and a photonic crystal structure array. The photonic crystal structure array formed through the mesa structure from top to bottom, thereby realizing higher directional light emission, simpler structure and lower cost.

Abstract: A micro LED panel having a micro LED array and the system and method to manufacture the micro LED panel are provided according to the present disclosure. The micro LED array includes at least one micro LED structure. The micro LED structure at least includes: a mesa structure and a re-growth layer. In some embodiments, the mesa structure comprises a first type epitaxial layer, a light emitting layer and a second epitaxial layer. In some embodiments, the re-growth layer is grown on at least part of the sidewall of the first type epitaxial layer, the whole sidewall of the light emitting layer and at least part of the sidewall of the second type epitaxial layer. The present disclosure can decrease the non-radiation recombination at the sidewall of the mesa structure and improve the light emitting efficiency of the micro LED structure.

Abstract: A light-emitting diode (LED) display panel includes a substrate, a driver circuit array on the substrate and including a plurality of pixel driver circuits arranged in an array, an LED array including a plurality of LED dies each being coupled to one of the pixel driver circuits, a micro lens array including a plurality of micro lenses each corresponding to and being arranged over at least one of the LED dies, and an optical spacer formed between the LED array and the micro lens array.

Abstract: A method for fabricating a single pixel micro LED device for a display panel includes providing a substrate having a pixel driver and fabricating an LED structure layer stacked on top of the substrate. The method further includes bonding the substrate and the LED structure layer together by a bonding layer. The LED structure layer is electrically connected to the pixel driver via the bonding layer. In some embodiments, before bonding the substrate and the LED structure layer, the method includes coating a reflection layer on the LED structure layer. In some embodiments, the method includes patterning the LED structure layer to form a red light LED.

Abstract: A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. A profile of the first type conductive layer perpendicularly projected on a bottom surface of the second type conductive layer is surrounded by an edge of the second type conductive layer.

Abstract: A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.

Abstract: A micro multi-color LED device includes two or more LED structures for emitting a range of colors. The two or more LED structures are vertically stacked to combine light from the two more LED structures. In some embodiments, each LED structure is connected to a pixel driver and a shared electrode. The LED structures are bonded together through bonding layers. In some embodiments, reflection layers are implemented in the device to improve the LED emission efficiency. A display panel comprising an array of the micro tri-color LED devices has a high resolution and a high illumination brightness.

Abstract: A micro multi-color LED device includes two or more LED structures for emitting a range of colors. The two or more LED structures are vertically stacked to combine light from the two more LED structures vertically, and/or horizontally and reflected upward via some reflective structures. In some embodiments, each LED structure is connected to a pixel driver and/or a common electrode. The LED structures are bonded together through bonding layers. In some embodiments, planarization layers enclose each of the LED structures or the micro multi-color LED device. In some embodiments, one or more of reflective layers, refractive layers, micro-lenses, spacers, and reflective cup structures are implemented in the device to improve the LED emission efficiency. A display panel comprising an array of the micro tri-color LED devices has a high resolution and a high illumination brightness.

Abstract: Various embodiments include a display panel with an integrated micro-lens array. The display panel typically includes an array of mesas which includes an array of pixel light sources (e.g., LEDs) electrically coupled to corresponding pixel driver circuits (e.g., FETs). The array of micro-lenses is off-axially arranged on the mesas including the pixel light sources, and are positioned to reduce the divergence of light produced by the pixel light sources, and direct the light to a certain angle or focus point on a pixel by pixel basis. Different micro-lens shapes and combinations are implemented in the display panel. The display panel may also include an integrated optical spacer formed from the same micro-lens material layer to maintain the positioning between the micro-lenses and pixel driver circuits.

Abstract: A micro multi-color LED device includes two or more LED structures for emitting a range of colors. The two or more LED structures are vertically stacked to combine light from the two or more LED structures. Light from the micro multi-color LED device is emitted substantially vertically upward through each of the LED structures. In some embodiments, each LED structure is connected to a pixel driver and/or a common electrode. The LED structures are bonded together through bonding layers. In some embodiments, planarization layers enclose each of the LED structures or the micro multi-color LED device. In some embodiments, one or more of reflective layers, refractive layers, micro-lenses, spacers, and reflective cup structures are implemented in the device to improve the LED emission efficiency. A display panel comprising an array of the micro tri-color LED devices has a high resolution and a high illumination brightness.

Abstract: A micro multi-color LED device includes two or more LED structures for emitting a range of colors. The two or more LED structures are vertically stacked to combine light from the two more LED structures. Light from the micro multi-color LED device is emitted horizontally from each of the LED structures and reflected upward via some reflective structures. In some embodiments, each LED structure is connected to a pixel driver and/or a common electrode. The LED structures are bonded together through bonding layers. In some embodiments, planarization layers enclose each of the LED structures or the micro multi-color LED device. In some embodiments, one or more of reflective layers, refractive layers, micro-lenses, spacers, and reflective cup structures are implemented in the device to improve the LED emission efficiency. A display panel comprising an array of the micro tri-color LED devices has a high resolution and a high illumination brightness.

Abstract: A micro multi-color LED device includes two or more LED structures for emitting a range of colors. The two or more LED structures are vertically stacked to combine light from the two more LED structures. In some embodiments, each LED structure is connected to a pixel driver and a shared P-electrode. The LED structures are bonded together through bonding layers. In some embodiments, reflection layers are implemented in the device to improve the LED emission efficiency. A display panel comprising an array of the micro tri-color LED devices has a high resolution and a high illumination brightness.

Abstract: A micro light emitting diode (LED) having a high light extraction efficiency includes a bottom conductive layer, a light emitting layer on the bottom conductive layer, and a top conductive structure on the light emitting layer. The micro LED additionally includes a conductive side arm electrically connecting the sidewall of the light emitting layer with the bottom conductive layer, and a reflective bottom dielectric layer arranged under the light emitting layer and above the bottom conductive layer. In some embodiments, the micro LED further includes an ohmic contact between the top conductive structure and the light emitting layer that has a small area and is transparent, thereby increasing the light emergent area and improving the light extraction efficiency.

Abstract: A micro multi-color LED device includes two or more LED structures for emitting a range of colors. The two or more LED structures are vertically stacked to combine light from the two more LED structures. Light from the micro multi-color LED device is emitted horizontally from each of the LED structures and reflected upward via some reflective structures. In some embodiments, each LED structure is connected to a pixel driver and/or a common electrode. The LED structures are bonded together through bonding layers. In some embodiments, planarization layers enclose each of the LED structures or the micro multi-color LED device. In some embodiments, one or more of reflective layers, refractive layers, micro-lenses, spacers, and reflective cup structures are implemented in the device to improve the LED emission efficiency. A display panel comprising an array of the micro tri-color LED devices has a high resolution and a high illumination brightness.

Abstract: The present invention discloses a double color micro LED display panel including a plurality of pixels. Each of the pixels includes a substrate, a first semiconductor layer configured on the substrate, a second semiconductor layer configured on the first semiconductor layer, and a third semiconductor layer configured between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer and the second semiconductor layer are P type, and the third semiconductor layer is N type. The first semiconductor layer and the third semiconductor layer form a first light emitting diode to emit a first light, and the second semiconductor layer and the third semiconductor layer form a second light emitting diode to emit a second light.

Abstract: Epitaxial structure for micro light emitting diode (LED) includes, from bottom to top, a semiconductor substrate (102), an N-type electrical conductive layer (108), a N-type cladding layer (110), an active light emitting layer (114), a P-type cladding layer (118), and a P-type electrical conductive layer (120,122,124). The epitaxial structure for micro LED further includes an oxide layer (210) within the N-type cladding layer (110) and/or between the N-type electrical conductive layer (108) and the N-type cladding layer (110), and/or an oxide layer (410) within the P-type cladding layer (118) and/or between the P-type electrical conductive layer (120,122,124) and the P-type cladding layer (118). The oxide layer (210,410) is formed as an oxide ring, which effectively increases the PN junction current density and the light emission efficiency of the LED device. A one-time or a two-time transfer fabrication process is used to form the LED device.