Abstract: The present invention provides a method of processing discharge gas containing ammonia, hydrogen, nitrogen, and an organic metal compound discharged from the production process of a gallium nitride compound semiconductor. The discharge gas is brought into contact with a cleaning agent prepared by impregnating an alkali metal compound with a metal oxide to remove the organic metal compound from the discharge gas. The discharge gas from which an organic metal compound is removed is brought into contact with an ammonia decomposition catalyst on heating to decompose the ammonia into nitrogen and hydrogen. The discharge gas in which ammonia is decomposed is brought into contact with palladium alloy membrane on heating to recover hydrogen that has penetrated through the palladium alloy membrane.

Abstract: The present invention is to provide a method for refining hydrogen with a hydrogen refining device in which the inside of a cell is divided into a primary side space and a secondary side space by palladium alloy capillaries each having one end being closed and a tube sheet supporting the open end of the palladium alloy capillaries, in which impurity-containing hydrogen is introduced from the primary side space to allow hydrogen to permeate the palladium alloy capillaries so as to collect pure hydrogen from the secondary side space. The method for refining hydrogen has a capability of decreasing the removed amount of gas containing impurities and efficiently collecting pure hydrogen from the secondary side space. From hydrogen with 1000 ppm or less of impurities as raw material hydrogen, gas containing impurities that does not penetrate the palladium alloy capillaries is removed from the primary side space at the flow rate of 10% or less of the introduction flow rate of the raw material hydrogen.

Abstract: The present invention provides ammonia purification means to remove impurities such as oil with a negative effect on vapor deposition from inexpensive commercially available industrial crude ammonia and from crude ammonia recovered from the gallium nitride compound semiconductor process and to continuously supply the purified ammonia to the gallium nitride compound semiconductor process. The oil removing device removing oil from crude ammonia containing oil as impurities includes an oil filter cylinder accommodating a filtration element cylindrically formed from a filtration membrane processed into a shape of pleat, honeycomb, or space structure; and an oil adsorption cylinder filled with activated carbon. The ammonia purification apparatus is provided with the oil removing device; a catalyst cylinder filled with a catalyst containing nickel as an active component; and an adsorption cylinder filled with synthetic zeolite.

Abstract: The present invention is to provide a means for easily replacing palladium alloy capillaries in a hydrogen purification device formed by using hydrogen separation membrane formed from the palladium alloy capillaries. The hydrogen purification device can be easily disassembled into a palladium alloy membrane unit and a storage structure thereof. A palladium alloy membrane unit is provided with a plurality of palladium alloy capillaries, a disk-shaped tube sheet supporting the palladium alloy capillaries, a pure hydrogen discharge pipe having a cylinder being in close contact with a periphery of the tube sheet at one end, a joint connecting with a pure hydrogen outlet of the storage structure at the other end, and preferably a joint being in close contact with an opening of a container of the storage structure at a position between the cylinder and the outlet joint.

Abstract: There are provided methods capable of easily and efficiently recovering and recycling ammonia from exhaust gas containing a small amount of ammonia, the exhaust gas being exhausted from a production process of a gallium nitride compound semiconductor. The method of recovering ammonia includes filtering exhaust gas containing ammonia, hydrogen, nitrogen, and a solid compound with a filter to remove the solid compound from the exhaust gas; pressurizing and cooling the filtered exhaust gas with a heat pump to liquefy ammonia contained in the filtered exhaust gas; and separating liquefied ammonia from hydrogen and nitrogen to recover liquefied ammonia. The method of recycling ammonia includes evaporating recovered liquid ammonia; mixing the evaporated ammonia with another crude ammonia to obtain mixed gas; purifying the mixed gas; and supplying the purified gas to the production process of a gallium nitride compound semiconductor.

Abstract: The present invention provides a method of processing discharge gas containing ammonia, hydrogen, nitrogen, and an organic metal compound discharged from the production process of a gallium nitride compound semiconductor. The discharge gas is brought into contact with a cleaning agent prepared by impregnating an alkali metal compound with a metal oxide to remove the organic metal compound from the discharge gas. The discharge gas from which an organic metal compound is removed is brought into contact with an ammonia decomposition catalyst on heating to decompose the ammonia into nitrogen and hydrogen. The discharge gas in which ammonia is decomposed is brought into contact with palladium alloy membrane on heating to recover hydrogen that has penetrated through the palladium alloy membrane.

Abstract: [Problem] Provided is a vapor phase epitaxy apparatus of a group III nitride semiconductor including: a susceptor for holding a substrate; the opposite face of the susceptor; a heater for heating the substrate; a reactor formed of a gap between the susceptor and the opposite face of the susceptor; a raw material gas-introducing portion for supplying a raw material gases from the central portion of the reactor toward the peripheral portion of the reactor; and a reacted gas-discharging portion. Even when crystal growth is conducted on the surfaces of a large number of large-aperture substrates, the vapor phase epitaxy apparatus can eject each raw material gas at an equal flow rate for any angle, and can suppress the decomposition and crystallization of the raw material gases on the opposite face of the susceptor.

Abstract: There are provided methods capable of easily and efficiently recovering and recycling ammonia from exhaust gas containing a small amount of ammonia, the exhaust gas being exhausted from a production process of a gallium nitride compound semiconductor. The method of recovering ammonia includes filtering exhaust gas containing ammonia, hydrogen, nitrogen, and a solid compound with a filter to remove the solid compound from the exhaust gas; pressurizing and cooling the filtered exhaust gas with a heat pump to liquefy ammonia contained in the filtered exhaust gas; and separating liquefied ammonia from hydrogen and nitrogen to recover liquefied ammonia. The method of recycling ammonia includes evaporating recovered liquid ammonia; mixing the evaporated ammonia with another crude ammonia to obtain mixed gas; purifying the mixed gas; and supplying the purified gas to the production process of a gallium nitride compound semiconductor.

Abstract: A cleaning apparatus a metal organic chemical vapor deposition (MOCVD) device incorporating a susceptor rotatably holding the plurality of substrate holders through a rotating mechanism of a bearing; and a cleaning method for efficiently removing deposits from components of the device. The cleaning apparatus includes storage for the susceptor and the plurality of substrate holders; a means for rotating the susceptor and/or a means for rotating the plurality of substrate holders; a heater; a cleaning gas-introducing port; and a cleaning gas-discharging port. The susceptor holding the plurality of substrate holders is stored in the cleaning apparatus after the device is used for vapor phase epitaxy, and cleaning gas is introduced to the susceptor while the susceptor and/or each of the substrate holders is rotated, so as to remove deposits deposited during vapor phase epitaxy.

Abstract: A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.

Abstract: An apparatus for producing powders of metal compound containing oxygen comprising a liquid flow controller, a vaporizer and a reactor, which consists essentially of: means for feeding a gas containing a material and oxygen; means for heating the gas from the side surface of the feeding means; means for cooling the gas positioned at the downstream side of the feeding means; and means for receiving the product generated by the reaction. A process and products for producing powders of metal compound containing oxygen comprising the steps of: feeding at least one material selected from a liquid material and a solution material obtained by dissolving solid ingredient in organic solvent via a liquid flow controller into a vaporizer; vaporizing the materials in the vaporizer; adding oxygen; heating; cooling; and crystallizing.

Abstract: A cleaning process of exhaust gas which includes the steps of bringing the exhaust gas containing at least one of nitrogen oxides or organic solvent into contact with a cleaning agent including metal as a reductive cleaning agent component and metal oxide as an oxidative cleaning agent component or including lower valent metal oxide as a reductive cleaning agent component and higher valent metal oxide as an oxidative cleaning agent component while heating them. A cleaning process of exhaust gas containing nitrogen oxides and/or organic solvent with high and varying concentration discharged from a manufacturing process of semiconductor capable of easily cleaning at relatively low temperature and with high decomposition factor without using large-scale cleaning apparatus or a complicated structural cleaning apparatus is provided.

Abstract: A process for producing powders of metal compound containing oxygen including the steps of: feeding at least one material selected from a liquid material and a solution material obtained by dissolving solid ingredient in organic solvent via a liquid flow controller into a vaporizer; vaporizing the materials in the vaporizer; adding oxygen; heating; cooling; and crystallizing. Also disclosed is the product formed by this process, and apparatus used in performing the process. The process and the apparatus enable easily mass-producing fine powders of metal compound containing oxygen used as materials for optical crystals, nonlinear crystals or magneto-optical crystals with reasonable production cost.

Abstract: The invention provides a method of recovering a copper component or a manganese component from a cleaning agent containing copper oxide, a cleaning agent containing basic copper carbonate, a cleaning agent containing copper hydroxide, or a cleaning agent containing copper oxide and manganese oxide, the cleaning agents having been used for removing, through contact with a harmful gas, a phosphine contained as a harmful component in the harmful gas. Also, the invention provides a method of recovering a copper component or a manganese component from a cleaning agent containing basic copper carbonate, a cleaning agent containing copper hydroxide, or a cleaning agent containing copper oxide and manganese oxide, the cleaning agents having been used for removing, through contact with a harmful gas, a phosphine contained as a harmful component in the harmful gas.

Abstract: There are disclosed a production apparatus for producing a gallium nitride film semiconductor by HVPE process, a cleaning apparatus for cleaning exhaust gas coming from the above apparatus and an overall production plant for producing a gallium nitride film semiconductor by HVPE process. Therein exhaust piping for exhaust gas in the production apparatus, introduction piping for the cleaning apparatus and exhaust gas piping which connects the production apparatus and the cleaning apparatus are each composed of an electroconductive corrosion-resistant material and are each electrically grounded, thereby surely preventing electrostatic charging due to friction between ammonium chloride powders in the exhaust gas and inside walls of exhaust gas piping, and markedly enhancing operational safety.

Abstract: There are disclosed a production apparatus for producing a gallium nitride semiconductor film by HVPE process, a cleaning apparatus for cleaning exhaust gas coming from the above apparatus and an overall production plant for producing a gallium nitride semiconductor by HVPE process. Therein exhaust piping for exhaust gas in the production apparatus, introduction piping for the cleaning apparatus and exhaust gas piping which connects the production apparatus and the cleaning apparatus are each composed of an electroconductive corrosion-resistant material and are each electrically grounded, thereby surely preventing electrostatic charging due to friction between ammonium chloride powders in the exhaust gas and inside walls of exhaust gas piping, and markedly enhancing operational safety.

Abstract: A material for forming an insulation film comprising an alkoxide compound of lithium and at least one kind of organic solvent selected from ether, ketone, ester, alcohol, and hydrocarbon. A material for forming an insulation film comprising a carboxylate of lithium, an organic solvent, and tetramethoxysilane or tetraethoxysilane. A film-forming method for forming an insulation film with the use of the material for forming an insulation film. An insulation film-forming over the various substrates by spin coating method, mist deposition method or CVD method with the use of these material becomes possible and enables to expect providing an insulation film of high quality and high purity containing lithium or lithium silicate.

Abstract: The present invention provides a vaporizer having a vaporization chamber for a CVD material, a CVD material feed portion supplying the CVD material for the vaporization chamber, a vaporized gas exhaust port and a heater for heating the vaporization chamber, wherein the CVD material feed portion has passageways for the CVD material and for a carrier gas respectively and the passageway for the CVD material has a pressure loss inducer for the CVD material. At the same time, the present invention provides an apparatus for vaporizing and supplying that feeds a CVD material to a vaporizer via a liquid flow controller, and after vaporizing the CVD material that supplies the vaporized gas for a semiconductor production apparatus having a pressure loss-inducer for the CVD material between the liquid flow controller and the vaporizer.

Abstract: The present invention provides a vaporizer having a vaporization chamber for a CVD material, a CVD material feed portion supplying the CVD material for the vaporization chamber, a vaporized gas exhaust port and a heater for heating the vaporization chamber, wherein the CVD material feed portion has passageways for the CVD material and for a carrier gas respectively and the passageway for the CVD material has a pressure loss inducer for the CVD material. At the same time, the present invention provides an apparatus for vaporizing and supplying that feeds a CVD material to a vaporizer via a liquid flow controller, and after vaporizing the CVD material that supplies the vaporized gas for a semiconductor production apparatus having a pressure loss-inducer for the CVD material between the liquid flow controller and the vaporizer.

Abstract: There are disclosed a decompositionally treating agent for fluorocarbons which comprises an aluminum compound and a lanthanoid compound as effective ingredients; a decompositionally treating agent for fluorocarbons which comprises an aluminum compound, a lanthanoid compound and an alkaline earth metal compound as effective ingredients; and a decompositionally treating method for fluorocarbons which comprises decomposing a fluorocarbon by bringing a fluorocarbon-containing gas into contact under heating with a decompositionally treating agent mentioned above or by bringing the above gas into contact under heating with a decompositionally treating agent comprising aluminum oxide as an effective ingredient and thereafter with a decompositionally treating agent comprising a lanthanoid oxide and an alkaline earth metal oxide.