Abstract: There are disclosed a production apparatus for producing a gallium nitride film semiconductor by HVPE process, a cleaning apparatus for cleaning exhaust gas coming from the above apparatus and an overall production plant for producing a gallium nitride film semiconductor by HVPE process. Therein exhaust piping for exhaust gas in the production apparatus, introduction piping for the cleaning apparatus and exhaust gas piping which connects the production apparatus and the cleaning apparatus are each composed of an electroconductive corrosion-resistant material and are each electrically grounded, thereby surely preventing electrostatic charging due to friction between ammonium chloride powders in the exhaust gas and inside walls of exhaust gas piping, and markedly enhancing operational safety.

Abstract: A vaporizing and supplying method for controlling a liquid CVD material in flow rate with liquid flow rate controllers, supplying a vaporizer with the material, vaporizing the same, and supplying a semiconductor manufacturing apparatus with the vaporized material, which includes installing in parallel, a plurality of liquid flow rate controllers, preferably each having a different controllable range of flow rate, and supplying the vaporizer with the material at a variable flow rate thereof by altering the single use of any of the controllers to the simultaneous use of a plurality thereof or vice versa, and/or switching any of the controllers one after another.

Abstract: There are disclosed a process for purifying ammonia which comprises bringing crude ammonia into contact with a catalyst comprising manganese oxide as an effective ingredient to remove oxygen and/or carbon dioxide that are contained as impurities in the ammonia, and a process for purifying ammonia which comprises bringing crude ammonia into contact with a catalyst comprising manganese oxide as an effective ingredient, and thereafter with a synthetic zeolite having a pore diameter in the range of 4 to 10 Å to remove at least one impurity selected from the group consisting of oxygen, carbon dioxide and moisture that are contained in the crude ammonia. It is made possible by the above process to remove impurities to an extremely low concentration from crude ammonia available on the market for industrial use and crude ammonia from a gallium nitride compound semi-conductor without decomposition of ammonia to generate hydrogen.

Abstract: The invention provides a method of recovering a copper component or a manganese component from a cleaning agent containing copper oxide, a cleaning agent containing basic copper carbonate, a cleaning agent containing copper hydroxide, or a cleaning agent containing copper oxide and manganese oxide, the cleaning agents having been used for removing, through contact with a harmful gas, a phosphine contained as a harmful component in the harmful gas. Also, the invention provides a method of recovering a copper component or a manganese component from a cleaning agent containing basic copper carbonate, a cleaning agent containing copper hydroxide, or a cleaning agent containing copper oxide and manganese oxide, the cleaning agents having been used for removing, through contact with a harmful gas, a phosphine contained as a harmful component in the harmful gas.

Abstract: The present invention provides a chemical vapor deposition apparatus for a semiconductor film, containing a horizontal tubular reactor, a susceptor, a heater, a feed gas introduction portion and a reaction gas exhaust portion, where part of the tubular reactor walls inclines downward from the upstream side of the feed gas passageway towards the downstream side thereof. The present invention also provides a chemical vapor deposition method using the apparatus.

Abstract: The present invention provides a vaporizer comprising a vaporization chamber for a CVD material, a CVD material feed portion supplying the CVD material for the vaporization chamber, a vaporized gas exhaust port and a heating means for heating the vaporization chamber, characterized in that the CVD material feed portion has passageways for the CVD material and for a carrier gas respectively and the passageway for the CVD material has a pressure loss-inducing means for the CVD material. At the same time, the present invention provides an apparatus for vaporizing and supplying that feeds a CVD material to a vaporizer via a liquid flow controller, and after vaporizing the CVD material that supplies the vaporized gas for a semiconductor production apparatus, characterized in having a pressure loss-inducing means for the CVD material between the liquid flow controller and the vaporizer.

Abstract: There are disclosed a process for cleaning a harmful gas which comprises bringing the harmful gas containing as a harmful component, an organosilicon compound represented by the general formula: CH2CH—SiR3, CH2CH—Si(OR)3, CH2CHCH2—SiR3 or CH2CHCH2—Si(OR)3, wherein R indicates a saturated hydrocarbon group or an aromatic compound group, into contact with a cleaning agent comprising activated carbon adhesively incorporated with at least one species selected from the group consisting of bromine, iodine, a metal bromide and a metal iodide in which the metal is exemplified by copper, lithium, sodium, potassium, magnesium, calcium, strontium, manganese, iron, cobalt, nickel, zinc, aluminum and tin; and a cleaning agent comprising the same. The cleaning process and the cleaning agent enable to practically clean a harmful gas which is exhausted from a semiconductor manufacturing process and the like by the use of a dry cleaning process.

Abstract: There are disclosed an apparatus and a method for chemical vapor deposition for a semiconductor film and the like, wherein a feed gas is supplied in a horizontal tubular reactor in the direction parallel to a substrate; a forcing gas is supplied therein in the direction perpendicular to the substrate; and the flow rate per unit area of the forcing gas which is supplied from a forcing gas introduction portion into the reactor is made lower in the central portion of the forcing gas introduction portion than in the peripheral portion thereof, or lower in the middle of a feed gas passageway than at both the end portions of the passageway.

Abstract: There is disclosed a vaporizing and supplying method for controlling a liquid CVD material in flow rate with liquid flow rate controllers, supplying a vaporizer with the material, vaporizing the same, and supplying a semiconductor manufacturing apparatus with the vaporized material, which comprises installing in parallel, a plurality of liquid flow rate controllers, preferably each having a different controllable range of flow rate, and supplying the vaporizer with the material at a variable flow rate thereof by altering the single use of any of the controllers to the simultaneous use of a plurality thereof or vice versa, and/or switching any of the controllers one after another.

Abstract: Disclosed is a method for cleaning of the harmful gas, the method comprising mixing harmful gas, discharged from reaction processes using organic metal compounds as the reaction raw materials, with oxygen or air and thereafter bringing the mixture into contact with a catalyst obtained by carrying a noble metal on an inorganic support, a catalyst comprising at least one metal oxide selected from vanadium oxide, chromium oxide, manganese oxide, iron oxide, copper oxide, silver oxide, cobalt oxide and nickel oxide or a catalyst obtained by carrying the metal oxide on an inorganic support, at temperatures between 100° C. and 800° C. to clean the harmful gas. Disclosed also is an apparatus used in the method. The invention ensures that harmful components can be purified in an efficient manner without discharging organic compounds and a large amount of carbon dioxide after the harmful gas is purified, requiring no aftertreatment.

Abstract: There is disclosed a chemical vapor deposition apparatus of semi-conductor film comprising a horizontal type reaction tube equipped with a susceptor to carry a substrate, a heater to heat the substrate, an ingredient gas introduction zone arranged in a way that feeding direction to the reaction tube of the ingredient gas becomes substantially parallel to the substrate, and a reaction gas exhaust division, and further having a pressurized gas introduction zone on the wall of the reaction tube facing the substrate, wherein the structure of at least one part of the pressurized gas introduction zone at an upstream side of an ingredient gas passageway is such that the pressurized gas supplied from said part of the pressurized gas introduction zone is fed in an oblique down or a horizontal direction oriented to a downstream side of the ingredient gas passageway. Also, disclosed herein a chemical vapor deposition method using the apparatus.

Abstract: There is disclosed a chemical vapor deposition apparatus for a semiconductor film, which comprises a horizontal tubular reactor, a susceptor, a heater, a feed gas introduction portion and a reaction gas exhaust portion, wherein the constitution of the apparatus is such that part of the tubular reactor walls inclines downward from the upstream side of the feed gas passageway towards the downstream side thereof so as to change the direction of the gas stream to an oblique downward direction or is such that the spacing between the susceptor and the tubular reactor wall in opposition thereto is made smaller than the vertical spacing in the tubular reactor wall from a gas feed port in the feed gas introduction portion to the upstream side end of the feed gas passageway for the susceptor. Also disclosed herein a chemical vapor deposition method using the apparatus.

Abstract: There are disclosed a vaporizer wherein at least a portion of a CVD material feed portion in contact with a CVD material is constituted of a corrosion resistant synthetic resin; and an apparatus for vaporizing and supplying which comprises a cooler and the vaporizer wherein the inside of the CVD material feed portion of the vaporizer and the surface on the side of the vaporization chamber of the CVD material feed portion are constituted of a corrosion resistant synthetic resin; the feed portion in contact with the outside of the vaporizer is constituted of a metal; and the CVD material feed portion which is constituted of a metal and which undergoes heat transfer from the heating means upon heating the vaporization chamber can be cooled with a cooler.

Abstract: Disclosed are a method for supplying a liquid raw material wherein the liquid raw material is deaerated and supplied from a liquid raw material container to a liquid flow control section, the method comprising passing the liquid raw material, supplied from a liquid raw material container by the pressure of a first inert gas, inside of a gas permeable synthetic resin tube, passing a second inert gas having a lower permeability into the synthetic resin tube than the first inert gas along the external surface of the synthetic resin tube whereby the first inert gas dissolved in the liquid raw material is allowed to penetrate into the outside of the synthetic resin tube and then supplying the liquid raw material to the liquid flow control section and an apparatus for supplying a liquid raw material which apparatus is used in the method. The invention ensures that inert gas dissolved in a liquid raw material can be removed easily and efficiently in a semiconductor manufacturing process using a liquid raw material.

Abstract: There are disclosed a production apparatus for producing a gallium nitride film semiconductor by HVPE process, a cleaning apparatus for cleaning exhaust gas coming from the above apparatus and an overall production plant for producing a gallium nitride film semiconductor by HVPE process. Therein exhaust piping for exhaust gas in the production apparatus, introduction piping for the cleaning apparatus and exhaust gas piping which connects the production apparatus and the cleaning apparatus are each composed of an electroconductive corrosion-resistant material and are each electrically grounded, thereby surely preventing electrostatic charging due to friction between ammonium chloride powders in the exhaust gas and inside walls of exhaust gas piping, and markedly enhancing operational safety.

Abstract: A cleaning agent and a cleaning process for cleaning a harmful gas containing, as a harmful component, an organometallic compound represented by the general formula: Rm—M—Hn wherein R is alkyl; M is As, P, S, Se or Te; and m and n are each positive integer satisfying the relation: m+n=valence of M are described. The cleaning agent contains, as an effective component, copper (II) oxide or a mixture of copper (II) oxide and manganese dioxide. The copper (II) oxide has a BET specific surface area of 10 m2/g or greater which is extremely larger than that of copper (II) oxide conventionally used as the effective component of known cleaning agents. With such an extremely large BET specific surface area, the cleaning agent strongly and stably adsorbs the harmful organometallic compound, thereby efficiently cleaning the harmful gas without causing desorption of the adsorbed organometallic compound.

Abstract: There are disclosed a vaporizer wherein at least a portion of a CVD material feed portion in contact with a CVD material is constituted of a corrosion resistant synthetic resin; and an apparatus for vaporizing and supplying which comprises a cooler and the vaporizer wherein the inside of the CVD material feed portion of the vaporizer and the surface on the side of the vaporization chamber of the CVD material feed portion are constituted of a corrosion resistant synthetic resin; the feed portion in contact with the outside of the vaporizer is constituted of a metal; and the CVD material feed portion which is constituted of a metal and which undergoes heat transfer from the heating means upon heating the vaporization chamber can be cooled with a cooler.

Abstract: There are disclosed a process for cleaning a harmful gas which comprises bringing the harmful gas containing as a harmful component, an organosilicon compound represented by the general formula: CH2CH-SiR3, CH2CH-Si(OR)3, CH2CHCH2 -SiR3 or CH2 CHCH2-Si(OR)3, wherein R indicates a saturated hydrocarbon group or an aromatic compound group, into contact with a cleaning agent comprising activated carbon adhesively incorporated with at least one species selected from the group consisting of bromine, iodine, a metal bromide and a metal iodide in which the metal is exemplified by copper, lithium, sodium, potassium, magnesium, calcium, strontium, manganese, iron, cobalt, nickel, zinc, aluminum and tin; and a cleaning agent comprising the same. The cleaning process and the cleaning agent enable to practically clean a harmful gas which is exhausted from a semiconductor manufacturing process and the like by the use of a dry cleaning process.

Abstract: A column for purifying gases by a dry method contains a horizontal plate fitted at a position above a bed of a purifying agent and below a gas inlet, and an upstanding pipe passing through the center of the horizontal plate for guiding harmful gases from the gas inlet to below the horizontal plate, and inner wall surface of the column, upper surface of the horizontal plate and outer wall surface of the pipe form a space defining a collector for the powdered material. Thus there is provided a purifying means which facilitates the purification of harmful gases discharged from e.g. a semiconductor manufacturing process and containing powdered material without accompanying blocking of a purification apparatus, and, thereby, make the operation for the purification and maintenance of the facilities easy, while allowing a purifying agent to exhibit its purifying ability thoroughly.

Abstract: There are disclosed an apparatus and a method for chemical vapor deposition for a semiconductor film and the like, wherein a feed gas is supplied in a horizontal tubular reactor in the direction parallel to a substrate; a forcing gas is supplied therein in the direction perpendicular to the substrate; and the flow rate per unit area of the forcing gas which is supplied from a forcing gas introduction portion into the reactor is made lower in the central portion of the forcing gas introduction portion than in the peripheral portion thereof, or lower in the middle of a feed gas passageway than at both the end portions of the passageway.