Abstract: A semiconductor device that is equipped with an ESD protection element, which has a size increase thereof suppressed, does not require extra process, and can be formed without inducing deterioration of characteristics of the semiconductor device. This semiconductor device includes a semiconductor substrate, a circuit element, that includes a PN junction formed of a region, which is formed on the semiconductor substrate, and which has a conductivity type different from that of the substrate and a protection element for the circuit element. The protection element is a transistor formed of the region, another region having the conductivity type same as that of the region, and the semiconductor substrate. The emitter for the transistor and the semiconductor substrate are connected to each other.

Abstract: A position detecting device using a reflection type photosensor, comprising a reflector fitted to a moving target and having reflecting portions and non-reflecting portions arranged alternately in a moving direction of the moving target, a reflection type photosensor having a light emitting element and a light receiving element with plural light receiving portions, and an operation unit for calculating a value indicating the position of the moving target. The light receiving element comprises the first and second light receiving portions outputting signals having different phases, the second light receiving portion is divided into two regions provided at far and near sides from the light emitting element about the first light receiving portion, and the operation unit calculates the value using the one signal calculated from the output signals from the two regions and the output signal from the first light receiving portion.

Abstract: An object of the present invention is to provide a position detecting device using a reflection type photosensor, which assures a small size and low cost and enables detection of a long distance of about 10 mm or more, and a position detecting method. The position of a moving body is detected by providing, on the moving body, a reflection plate (12) having reflecting surfaces (sa) and non-reflecting surfaces (sb) arranged alternately in a moving direction of the moving body, providing a light receiving element (8) of the reflection type photosensor (9) with, for example, two light receiving portions (8a and 8b) having different light receiving regions in the moving direction of the moving body, outputting output signals from these two light receiving portions (8a and 8b), and carrying out at least one calculation of adding, subtracting, dividing and function calculation of these two output signals.

Abstract: A semiconductor device that is equipped with an ESD protection element, which has a size increase thereof suppressed, does not require extra process, and can be formed without inducing deterioration of characteristics of the semiconductor device. This semiconductor device includes a semiconductor substrate, a circuit element, that includes a PN junction formed of a region, which is formed on the semiconductor substrate, and which has a conductivity type different from that of the substrate and a protection element for the circuit element. The protection element is a transistor formed of the region, another region having the conductivity type same as that of the region, and the semiconductor substrate. The emitter for the transistor and the semiconductor substrate are connected to each other.

Abstract: There is provided a position detecting device using reflection type photosensors in which a position sensing of lens located not less than 1 mm apart from a sensor can be conducted. A pair of reflection type photosensors PR1 and PR2 are oppositely arranged, a double sided reflector 5 attached on a movable body is movably arranged between the pair of reflection type photosensors and a position of the double sided reflector 5 is detected from the outputs of these reflection type photosensors. In the position detecting device of the present invention, an operating formula in which linear values are obtained depending on a moving distance of the double sided reflector can be used. For example, when an output of one of the pair of reflection type photosensors is Vo1, and an output of the other is Vo2, the position detecting is conducted using the operating formula of (Vo1?Vo2)/(Vo1+Vo2).

Abstract: A position detecting device using a reflection type photosensor, comprising a reflector fitted to a moving target and having reflecting portions and non-reflecting portions arranged alternately in a moving direction of the moving target, a reflection type photosensor having a light emitting element and a light receiving element with plural light receiving portions, and an operation unit for calculating a value indicating the position of the moving target. The light receiving element comprises the first and second light receiving portions outputting signals having different phases, the second light receiving portion is divided into two regions provided at far and near sides from the light emitting element about the first light receiving portion, and the operation unit calculates the value using the one signal calculated from the output signals from the two regions and the output signal from the first light receiving portion.

Abstract: The object of the presently disclosed embodiment is to improve heat dissipation and an overall cooling efficiency to raise a peak oscillation output. To achieve the object, there is provided a coaxial magnetron having the following configuration: Around a cathode, vanes and an anode cylinder form an anode resonant cavity, and a cylindrical side body forms an outer cavity. An input side structure having an input part and an upper structure are joined to both ends of the cylindrical side body. One end of the anode cylinder is joined to the input side structure. A groove (or step) for adjusting the distance between the structures and at the both ends is provided, and the groove is joined to the other end of the anode cylinder.

Abstract: The object of the present invention is to provide a radar receiver that can steadily and reliably detect the target in the close zone without largely complicating the construction compared to the conventional radar apparatuses. The radar receiver according to the present invention comprises a receiving unit 15 that detects or modulates a received wave for detecting a target, the received wave arriving from the target in response to a transmitting wave transmitted towards the target, and a control unit 19 that sets a gain of the receiving unit 15 to a value at which the receiving unit is prevented from falling into a saturation region by a component of the transmission wave that wraps around the receiving unit 15 through an aerial system used for transmission of the transmission wave during a period in which the transmission wave is being transmitted.

Abstract: The switching element is provided in a state of being electromagnetically coupled to the cavity resonator of the high frequency oscillator; the bias voltage applying terminal is connected to one electrode of the switching element; another electrode of the switching element is electrically connected to the cavity resonator (the anode shell in FIG. 1); the metal plate having a size enough for reflecting an electric wave to be transmitted before and after the switching element in a high-frequency manner is provided at any one end of the switching element; and by applying a bias voltage to the switching element and varying that, a reactance of the switching element is changed and a resonance frequency of the cavity resonator is varied. By this method, an oscillation frequency can be varied greatly relative to a small change in a bias voltage.

Abstract: An aluminum material can be used on a surface of the electrode of a semiconductor element, this aluminum layer need not be formed thick unnecessarily, a copper wire is bonded strongly to the semiconductor element irrespective of a diameter of the wire, and high heat resistance can be achieved. Silicon carbide (SiC) is used as a substrate of the semiconductor element 10, the titanium layer 20 and the aluminum layer 21 are formed as the electrode 15 on the silicon carbide substrate, and by a ball bonding or a wedge bonding of the copper wire 16 to the aluminum layer 21 of the electrode 15 while applying ultrasonic wave, the copper-aluminum compound layer 23 (Al4Cu9, AlCu or the like) is formed between the copper wire 16 and the titanium layer 20.

Abstract: A highly-reliable electronic frequency tuning magnetron comprises an anode for forming a resonant cavity which is segmented into a plurality of spaces in an inner periphery side of a cylindrical anode shell, a cathode provided at the center of the anode shell along its cylindrical axial direction and an exhausted structure having a coaxial central conductor which is connected to the inside of the cavity of the anode shell and is coupled thereto in a high-frequency manner, wherein the coaxial central conductor is externally led through a wall of the exhausted structure via a through-hole and the through-hole is covered by a dielectric portion placed between an external conductor for constituting the coaxial central conductor and the central conductor, wherein a portion of the led coaxial central conductor is conductively connected to a switching element.

Abstract: An object of the present invention is to provide a position detecting device using a reflection type photosensor, which assures a small size and low cost and enables detection of a long distance of about 10 mm or more, and a position detecting method. The position of a moving body is detected by providing, on the moving body, a reflection plate (12) having reflecting surfaces (sa) and non-reflecting surfaces (sb) arranged alternately in a moving direction of the moving body, providing a light receiving element (8) of the reflection type photosensor (9) with, for example, two light receiving portions (8a and 8b) having different light receiving regions in the moving direction of the moving body, outputting output signals from these two light receiving portions (8a and 8b), and carrying out at least one calculation of adding, subtracting, dividing and function calculation of these two output signals.

Abstract: A mobile body-mounted communication device mounted in a mobile body such as a vehicle and making difficult the long-time tracking of the moving path of the mobile body. The mobile body-mounted communication device mounted in a mobile body and used for transmitting/receiving packet information is characterized by comprising a borrowing address acquiring section for acquiring lending addresses as borrowed addresses from an address management device managing lending addresses, a borrowing time information acquiring section for acquiring information representing predetermined times during which the borrowing addresses can be used from the address management device, and a transmitting section for transmitting packet information including information on a borrowing address out of the borrowing addresses and the mobile body during the predetermined borrowing times determined for the borrowing addresses.

Abstract: A surface acoustic wave device having electrodes disposed on a piezoelectric substrate, comprising a sealing member having a peripheral wall disposed on the piezoelectric substrate in surrounding relation to the electrodes, and a top plate covering the peripheral wall; and a sealing stiffener disposed on the piezoelectric substrate in facing relation to a liquid material imposed on the piezoelectric substrate and which extends parallel to a portion of the peripheral wall.

Abstract: There is provided a time-division duplex transmit-receive apparatus in which the respective amplitude and phase characteristics of N sets of transmitting unit-receiving unit pair connected with N antenna elements are corrected all together and at the same time. At the time of reception, the reference signal from reference signal generator is branched into N reference signals. The branched reference signal is applied to the reception system through the transmit-receive switching switch. The reception-side error detector detects the error between the output signal of the reception-side amplitude-phase correction circuit and the reference signal to control the reception-side amplitude-phase correction circuit so that the error becomes zero. At the time of transmission, a part of transmitting signal is applied to the reception system through the antenna path.

Abstract: There is provided a position detecting device using reflection type photosensors in which a position sensing of lens located not less than 1 mm apart from a sensor can be conducted. A pair of reflection type photosensors PR1 and PR2 are oppositely arranged, a double sided reflector 5 attached on a movable body is movably arranged between the pair of reflection type photosensors and a position of the double sided reflector 5 is detected from the outputs of these reflection type photosensors. In the position detecting device of the present invention, an operating formula in which linear values are obtained depending on a moving distance of the double sided reflector can be used. For example, when an output of one of the pair of reflection type photosensors is Vo1, and an output of the other is Vo2, the position detecting is conducted using the operating formula of (Vo1?Vo2)/(Vo1+Vo2).

Abstract: A manufacturing method of a semiconductor device including a protecting element with a p-n junction which can be formed in the same process as that of a p-channel junction FET while the junction FET is formed in simple manufacturing process is provided. In the method of manufacturing semiconductor device composed of compound semiconductor having a p-channel FET and protective element, an n-type channel layer 2, n+-type contact layer 3, n-type semiconductor layer 5, p-type channel layer 7, p+-type contact layer 8 are laminated on a substrate 1 to form a semiconductor laminate portion 10. A portion of the semiconductor laminate portion 10 is removed by etching to expose the n+-type contact layer 3 and gate electrode 13 of a junction p-channel FET 22 is formed on the surface of the exposed n+-type contact layer 3. A protective element 23 is formed by a portion of the semiconductor 10.

Abstract: Provided is a damage evaluation apparatus capable of evaluating the damage of an asphalt mixture or the like non-destructively for a short time and in a precise manner. This apparatus turns a sample (S) and irradiates it at every predetermined angle with an X-ray so that it detects the transmitted X-ray with an X-ray detector (104). An image reconstruction unit (122) creates multiple sheets of slice image data reconstructing the inside state of the sample (S) by using the detection results of the X-ray detector (104). An image processing unit (124) creates three-dimensional CT image data of the inside of the sample (S) with the slice image data created by the image reconstruction unit (122). A cavity analyzing unit (126) calculates the quantitative data of the inside state of the sample (S) with a predetermined calculation algorithm by using the slice image data created by the image reconstruction unit (122).