Abstract: An above deck unit for an AIS (automatic identification system) is externally installed on a ship. The above deck unit includes a radio circuit and an associated antenna for transmitting and receiving a message, a position detector and an associated antenna, associated controller and power supply, and a container for storing these elements. An inboard transmission path, e.g., a cable, connects the outdoor unit for the AIS and an AIS display serving as an interface means for the crew. A signal to be transmitted through the inboard transmission path is a processed, for example, an amplified signal, rather than an unprocessed output of a VHF antenna. Therefore, problems of signal loss or degradation along the inboard transmission path are unlikely to occur. Because the unit is incorporated within a single container, it can easily be installed and transferred. With this antenna complex, it is also possible to suppress interference between antennas.

Abstract: A Gunn diode which is formed by sequentially laminating a first semiconductor layer, an active layer and a second semiconductor layer onto a semiconductor substrate. The Gunn diode comprises first and second electrodes arranged on the second semiconductor layer for impressing voltage on the active layer, and a concave portion which is cut from around the first electrode in a direction of the second semiconductor layer and the active layer and which subdivides the second semiconductor layer and the active layer to which the first electrode is connected as a region which functions as a Gunn diode. Since etching for defining a region that is to function as a Gunn diode is performed by self-alignment dry etching utilizing electrode layers formed above this region as masks, variations in characteristics are restricted.

Abstract: Indium phosphor (InP) Gunn diode that realizes improvements in thermal characteristics, yield factor of good products and easy assembly to planar circuits is provided.

Abstract: A printing system includes a printing apparatus and a computer. The printing apparatus and the computer each include a density setting section. The printing system further includes a data processing section, which is at least adapted to transfer printing density data for a predetermined printing object from the computer to the printing apparatus so as to set printing density on the printing apparatus and to transfer printing density data for a predetermined printing object from the printing apparatus to the computer in order to store the printing density data in a database. Since printing density can be set on either of the printing apparatus and the computer, for example, in a trial printing mode, printing density data are transferred from the database stored in the computer to the printing apparatus so as to set printing density on the printing apparatus, thereby enabling trial printing.

Abstract: A feed-forward amplifier and a controller thereof. Two types of second pilot signals, sum frequency and difference frequency of a base pilot signal and a local oscillation signal, are generated by an injection-side mixer and injected into a distortion detection loop. Part of a signal appearing at an output terminal is branched, converted in frequency by a detection-side mixer using the local oscillation signal, filtered by a narrow-band filter, input to a synchronizing detector with the filtered output of the filter as error signals, and synchronizing detected with reference to the base pilot signal so as to generate control signals for a distortion rejection loop. The spectrums of the second pilot signals may be spread. A process to cancel the input signal component at the detection side may be performed. A simple circuit configuration enhances the distortion component rejection and suppression effect and shortens the time required until an optimum control state is established.

Abstract: A circuit for biasing an FET, comparing a gate bias voltage of the FET with a reference voltage at an operational amplifier and performing closed-loop control on the gate bias voltage of the FET with the output of the operational amplifier. The temperature characteristics of the mutual conductance of the FET is compensated by setting the temperature characteristics of one or both of two voltage dividing resistors. Variations in a drain bias current due to input signal level and temperature changes can be suppressed. The circuit at the gate and the circuit at the drain are separate, making possible class A, class AB, and class B operations. The voltage drop at the gate resistor can be ignored so that the gate resistor can be designed with priority given to stability of the RF characteristics.

Abstract: An artificial stereophonic circuit which includes a monophonic signal input terminal, a signal output terminal of one of an L channel and an R channel which are connected to the signal input terminal, a phase-shifting circuit having an input side connected to the signal input terminal, and a signal output terminal of the other channel of the L channel and the R channel having an output side connected to the phase-shifting circuit. The phase-shifting circuit has an almost equal gain in a full frequency band of an input signal, and a phase shift for a change from 0 to 180 degrees according to an increase in a frequency of the input signal is carried out. The change of the phase can be minimized and a natural stereophonic effect can be realized. Moreover, only one capacitor is enough and only one pin for external attachment is enough for wholly forming an IC.

Abstract: A surround reproducing circuit includes a first adder for generating a difference signal of an L signal and an R signal which are inputted, a low-pass filter connected to an output side of the first adder, and second and third adders for mixing an output signal of the low-pass filter as a surround signal with the L signal and the R signal in an opposite phase relationship to each other. Change in a phase is lessened within a frequency band of 20 Hz to 20 KHz and the localization can become definite, and furthermore, a harsh high pass is also lessened. Consequently, it is possible to realize a surround effect having natural spread. Furthermore, the number of capacitors to be required can also be decreased.

Abstract: A method includes the steps of forming a first metal foil (82) on a surface of an insulator substrate (1a), drilling, with a thermosetting resin film (84) temporarily fixed to an opposite surface of the substrate, a through hole (86) simultaneously in the first foil, the substrate, and the resin film, simultaneously heating and vacuum-pressing the first foil, the substrate, the resin film, and a second metal foil (87) brought into contact with the resin film to obtain an intermediate board in which a bottom of the through hole is covered with the second foil and has a corner with a corner rounded portion (93) formed by the resin film, and forming a metal plating layer (95) on the first and the second foils, on the bottom and an inner wall of the through hole, and on the corner rounded portion to obtain a final printed wiring board.

Abstract: A Gunn diode which is formed by sequentially laminating a first semiconductor layer, an active layer and a second semiconductor layer onto a semiconductor substrate. The Gunn diode comprises first and second electrodes arranged on the second semiconductor layer for impressing voltage on the active layer, and a concave portion which is cut from around the first electrode in a direction of the second semiconductor layer and the active layer and which subdivides the second semiconductor layer and the active layer to which the first electrode is connected as a region which functions as a Gunn diode. Since etching for defining a region that is to function as a Gunn diode is performed by self-alignment dry etching utilizing electrode layers formed above this region as masks, variations in characteristics are restricted.

Abstract: A cathode for a magnetron having concave/convex portions on a surface of a cylindrical base metal with thermionic emitting materials being fixedly attached to concave portions from among the concave/convex portions. The convex portions of the concave/convex portions are arranged to be inclining. It is enabled to effectively protect thermionic emitting materials from inverse impulse of electrons or ions and from oscillation to thereby restrain consumption and omission of these thermionic emitting materials and to decrease higher harmonics of radiation.

Abstract: The semiconductor integrated switching circuit S1 employed in a dual-band mobile phone comprises the first through fourth field effect transistor 1, 2, 3, 4 by which electrical connection between either of the first through fourth input/output terminal 22 through 25 and the common input-output terminal 21 are controlled, the fifth field effect transistor 5 which becomes conducting with the second field effect transistor 2, and the series resonance circuit 51 having a resonance frequency equals to a frequency of higher harmonic of the signal passing through the second field effect transistor 2. The fifth field effect transistor 5 and the series resonance circuit 51 are connected in series and attached between the common input-output terminal 21 and the ground so as to divert the higher harmonic of the signal without giving passing loss to the signal.

Abstract: The semiconductor integrated switching circuit S1 employed in a dual-band mobile phone comprises the first through fourth field effect transistor 1, 2, 3, 4 by which electrical connection between either of the first through fourth input/output terminal 22 through 25 and the common input-output terminal 21 are controlled, the fifth field effect transistor 5 which becomes conducting with the second field effect transistor 2, and the series resonance circuit 51 having a resonance frequency equals to a frequency of higher harmonic of the signal passing through the second field effect transistor 2. The fifth field effect transistor 5 and the series resonance circuit 51 are connected in series and attached between the common input-output terminal 21 and the ground so as to divert the higher harmonic of the signal without giving passing loss to the signal.

Abstract: A DSP-based and multi-channel digital filter chip providing crossover filtering and parametric equalization. Crossovers can be low-pass, high-pass, or band-pass filters with programmable cutoff frequencies. Each equalizer band has independently adjustable center frequency band, and levels over a −60 dB to +16 dB range. The chip can work either with a microprocessor controlling the chip or in a stand-alone mode having the filter settings downloaded automatically from an external EEPROM. The chip is ideal for applications that require precise digital filtering or software programmable filters, and is also an alternative to analog filters, eliminating passive components and reducing circuit size.

Abstract: In a voltage equalizing apparatus for battery devices, wherein each of a plurality of closed circuits is constituted of each of a plurality of battery devices interconnected in series on a secondary side, each of a plurality of secondary windings magnetically coupled with each other, and each of a plurality of switching devices on the secondary side, wherein a closed circuit is constituted of a battery device on a primary side, a primary winding magnetically coupled with the secondary windings in common, and a switching device on the primary side, and wherein the plurality of switching devices on the secondary side and the switching device on the primary side are alternately switched ON and OFF, thereby equalizing the output voltages of the plurality of battery devices interconnected in series on the secondary side; the ON operation of the plurality of switching devices on the secondary side is continued until after the completion of release of exciting energy stored in a transformer.

Abstract: A Gunn diode which is formed by sequentially laminating a first semiconductor layer, an active layer and a second semiconductor layer onto a semiconductor substrate. The Gunn diode comprises first and second electrodes arranged on the second semiconductor layer for impressing voltage on the active layer, and a concave layer portion which is cut from around the first electrode in a direction of the second semiconductor layer and the active layer and which subdivides the second semiconductor layer and the active layer to which the first electrode is connected as a region which functions as a Gunn diode. Since etching for defining a region that is to function as a Gunn diode is performed by self-alignment dry etching utilizing electrode layers formed above this region as masks, variations in characteristics are restricted.

Abstract: An image synthesis system comprises a volume memory for accumulating entire volume data after being divided into cubic data comprising units each of which is composed of eight pieces of volume data for constructing a small cube to make it possible to perform memory operation by using the units of the cubic data; an image processing unit including a memory control unit, an inclination calculation unit, a brightness calculation unit, a synthesis calculation unit, and a coordinate conversion unit; an image display memory; and a display unit. The volume data is read from the volume memory by using the units each of which is composed of eight voxels for constructing the small cube. The inclination calculation is performed by the inclination calculation unit, the brightness is calculated by the brightness calculation unit, and the synthesis calculation unit is used to perform the synthesis calculation for the entire volume data along voxels through which an arbitrarily set imaginary line of sight passes.

Abstract: A first substrate has a plurality of bumps and a second substrate has a plurality of openings at positions in registration with the plurality of bumps when the first and second substrates are placed one on top of the other in a confronting manner. The first and second substrates are put together by fusing a sealing wall formed on the second substrate, to hermetically seal an electronic device lying on the first substrate therein. Gas that may be generated upon fusing of the sealing wall can be effectively removed through the openings in the second substrate.

Abstract: There is provided a cathode which is easily operable, harmless, and stable at high temperature at least 1,400° C. as well as excellent in electron emission characteristics at the same time, and the process for preparing the same. The cathode of the present invention comprises a polycrystalline substance or a polycrystalline porous substance of high-melting point metal material and an emitter material dispersed into said polycrystalline substance or polycrystalline porous substance in an amount of 0.1 to 30% by weight in the cathode, wherein the emitter material comprises at least one selected from the group consisting of hafnium oxide, zirconium oxide, lanthanum oxide, cerium oxide and titanium oxide.

Abstract: There is provided a cathode which is easily operable, harmless, and stable at high temperature at least 1,400° C. as well as excellent in electron emission characteristics at the same time, and the process for preparing the same. The cathode of the present invention comprises a polycrystalline substance or a polycrystalline porous substance of high-melting point metal material and an emitter material dispersed into said polycrystalline substance or polycrystalline porous substance, wherein 0.1 to 30% by weight of at least one selected from the group consisting of hafnium oxide, zirconium oxide, lanthanum oxide, cerium oxide and titanium oxide is dispersed in said emitter material.