Patents Assigned to JX Nippon Mining & Metals Corporation
  • Method for producing high-purity calcium
    Patent number: 9499877
    Abstract: The present invention provides a method for producing high-purity calcium, the method being characterized by the following: performing first sublimation purification by introducing calcium starting material having a purity, excluding the gas components, of 4N or less into a crucible of a sublimation vessel, subjecting the starting material to sublimation by heating at 750° C. to 800° C., and causing the product to deposit (evaporate) onto the inside walls of the sublimation vessel; and then, once the calcium that has been subjected to first sublimation purification is recovered, performing second sublimation purification by introducing the recovered calcium again to the crucible to the sublimation vessel, heating the recovered calcium at 750° C. to 800° C.
    Type: Grant
    Filed: November 13, 2012
    Date of Patent: November 22, 2016
    Assignee: JX NIPPON MINING & METALS CORPORATION
    Inventor: Masahiro Takahata
  • Surface treated copper foil and laminate using the same
    Patent number: 9504149
    Abstract: A surface treated copper foil which is well bonded to a resin and achieves excellent visibility when observed through the resin, and a laminate using the same are provided.
    Type: Grant
    Filed: November 11, 2013
    Date of Patent: November 22, 2016
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Hideta Arai, Atsushi Miki, Kohsuke Arai, Kaichiro Nakamuro
  • Copper-Titanium Alloy for Electronic Component
    Publication number: 20160326611
    Abstract: The present invention controls the fluctuations of Ti concentration in a copper titanium alloy from a perspective different from conventional perspectives to improve the strength and bending workability of the copper titanium alloy. A copper titanium alloy for electronic components comprising 2.0 to 4.0 mass % of Ti, and 0 to 0.5 mass %, in total, of one or more elements selected from the group consisting of Fe, Co, Mg, Si, Ni, Cr, Zr, Mo, V, Nb, Mn, B, and P as a third element, with the balance being copper and unavoidable impurities, wherein a coefficient of variation in a Ti concentration fluctuation curve is 0.2 to 0.
    Type: Application
    Filed: September 11, 2014
    Publication date: November 10, 2016
    Applicant: JX Nippon Mining & Metals Corporation
    Inventor: Hiroyasu Horie
  • Copper foil for producing graphene and method of producing graphene using the same
    Patent number: 9487404
    Abstract: A copper foil for producing graphene, including oxides and sulfides each having a diameter of 0.5 ?m or more having a total number of 15/mm2 or less measured by using a scanning electronic microscope before heating at 1000° C. for 1 hour.
    Type: Grant
    Filed: April 9, 2012
    Date of Patent: November 8, 2016
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Yoshihiro Chiba, Tatsuya Yamaji
  • Strip of Cu—Co—Si-based copper alloy for electronic materials and the method for producing the same
    Patent number: 9490039
    Abstract: Cu—Co—Si-based alloy strip, which has not only an excellent balance between strength and electrical conductivity but also suppressed hanging curl, is provided. The copper alloy strip for electronic materials comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, the following (a) is satisfied. (a) A diffraction peak height at ? angle 120° among diffraction peak intensities by ? scanning at ?=25° in a {200} pole figure is at least 10 times that of standard copper powder.
    Type: Grant
    Filed: March 15, 2012
    Date of Patent: November 8, 2016
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Hiroshi Kuwagaki, Yasuhiro Okafuji
  • Indium target and method for manufacturing same
    Patent number: 9490108
    Abstract: Provided are an indium target capable of achieving a high deposition rate while suppressing the occurrence of arcing, and a method for manufacturing the indium target. In the process of solidification at the time of melting and casting an indium ingot, ultrasonic vibration is applied to molten indium liquid which is at least in a state immediately before solidification, and thereby, coarsening of the grain size is suppressed. Thus, an indium target is provided An indium target in which an overall average grain size is 10 mm or less; for the grains observed from a cross-section parallel to a thickness direction, a ratio of an average grain size in a direction parallel to the thickness direction with respect to an average grain size in a direction perpendicular to the thickness direction is 0.7 to 1.1; and pores with a pore size of 50 ?m or greater exists at a density of 1 pore/cm3 or less.
    Type: Grant
    Filed: May 20, 2011
    Date of Patent: November 8, 2016
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Yousuke Endo, Takamasa Maekawa
  • Metal foil for electromagnetic shielding, electromagnetic shielding material, and shielding cable
    Patent number: 9485894
    Abstract: A metal foil for electromagnetic shielding, comprising: a metal foil base, an Sn—Ni alloy layer formed on one or both surfaces of the base, and an oxide layer formed on a surface of the Sn—Ni alloy layer, wherein the Sn—Ni alloy layer includes 20 to 80% by mass of Sn and has a thickness of 30 to 500 nm, and wherein when an analysis in a depth direction is carried out by an XPS being the depth from an outermost surface as X nm, and an atomic percentage (%) of Sn is represented by ASn (X), an atomic percentage (%) of Ni is represented by ANi (X), an atomic percentage (%) of oxygen is represented by AO(X), and X is defined to be XO when AO(X)=0, 30 nm=>XO=>0.5 nm, and 0.4=>?ANi(X)dx/?ASn(X)dx=>0.05 in a section [0, X0] is satisfied.
    Type: Grant
    Filed: February 20, 2014
    Date of Patent: November 1, 2016
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Koichiro Tanaka
  • High purity copper and method of producing high purity copper based on electrolysis
    Patent number: 9476134
    Abstract: High purity copper having a purity of 6N or higher, wherein content of each of the respective components of P, S, 0, and C is 1 ppm or less, and nonmetal inclusions having a particle size of 0.5 ?m or more and 20 ?m or less contained in the copper are 10,000 inclusions/g or less. As a result of using high purity copper or high purity copper alloy as the raw material from which harmful P, S, C, O-based inclusions have been reduced and controlling the existence form of nonmetal inclusions, it is possible to reduce the occurrence of rupture of a bonding wire and improve the reproducibility of mechanical properties, or reduce the percent defect of a semiconductor device wiring formed by sputtering a high purity copper target with favorable reproducibility.
    Type: Grant
    Filed: July 18, 2013
    Date of Patent: October 25, 2016
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Yuichiro Shindo, Susumu Shimamoto, Atsushi Fukushima
  • Cu—Ni—Si—Co copper alloy for electronic material and process for producing same
    Patent number: 9476109
    Abstract: A Cu—Ni—Si—Co system alloy having an improved spring bending elastic limit is provided. The alloy is a copper alloy for electronic materials, which contains 1.0% to 2.5% by mass of Ni, 0.5% to 2.5% by mass of Co, and 0.3% to 1.2% by mass of Si, with the balance being Cu and unavoidable impurities, wherein from the results obtainable by an X-ray diffraction pole figure analysis using a rolled surface as a base, among the diffraction peak intensities of the {111}Cu plane with respect to the {200}Cu plane obtained by ? scanning at ?=35°, the peak height at a ? angle of 90° of the copper alloy is at least 2.5 times the peak height of a standard copper powder.
    Type: Grant
    Filed: March 25, 2011
    Date of Patent: October 25, 2016
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Hiroshi Kuwagaki
  • Cu—Si—Co-based copper alloy for electronic materials and method for producing the same
    Patent number: 9478323
    Abstract: A Cu—Si—Co-based alloy having an enhanced spring limit is provided. The copper alloy comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, a peak height at ? angle of 90° among diffraction peaks in {111} Cu plane with respect to {200} Cu plane by ? scanning at ?=35° is at least 2.5 times that of a standard copper powder.
    Type: Grant
    Filed: March 2, 2012
    Date of Patent: October 25, 2016
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Yasuhiro Okafuji, Hiroshi Kuwagaki
  • Copper-Titanium Alloy for Electronic Component
    Publication number: 20160304990
    Abstract: There is provided a copper-titanium alloy with large fluctuations in Ti concentration. The copper-titanium alloy for electronic components contains 2.0 to 4.0% by mass of Ti and, as a third element, 0 to 0.5% by mass in total of one or more selected from a group consisting of Fe, Co, Mg, Si, Ni, Cr, Zr, Mo, V, Nb, Mn, B, and P, with a balance being copper and unavoidable impurities, wherein when crystal grains having <100> orientation in a section parallel to a rolling direction are subjected to area analysis of Ti concentration in a matrix phase, a difference between a maximum Ti concentration and a minimum Ti concentration is 5 to 16% by mass.
    Type: Application
    Filed: September 11, 2014
    Publication date: October 20, 2016
    Applicant: JX Nippon Mining & Metals Corporation
    Inventor: Hiroyasu Horie
  • Surface Treated Copper Foil, Copper Clad Laminate, Printed Wiring Board, Electronic Apparatus and Method for Manufacturing Printed Wiring Board
    Publication number: 20160303829
    Abstract: A surface treated copper foil which allows the resin to have excellent transparency after removal of the copper foil by etching is provided. The surface treated copper foil has one surface and other surface each surface treated. An Sv defined by the following expression (1) is 3.5 or more: Sv=(?B×0.1)/(t1?t2)??(1) which is determined, after laminating one surface to each of both surfaces of a polyimide resin substrate, removing the copper foil on each of both surfaces by etching, and photographing a printed matter with a linear mark, from the resulting observation spot versus brightness graph; and the surface treated other surface of the copper foil has a TD ten-spot average roughness Rz measured with a laser microscope using laser light having a wavelength of 405 nm, of 0.35 ?m or more.
    Type: Application
    Filed: December 10, 2014
    Publication date: October 20, 2016
    Applicant: JX Nippon Mining & Metals Corporation
    Inventors: Hideta Arai, Atsushi Miki, Kohsuke Arai, Kaichiro Nakamuro
  • Copper or copper alloy target/copper alloy backing plate assembly
    Patent number: 9472383
    Abstract: Provided is a copper or copper alloy target/copper alloy backing plate assembly in which the anti-eddy current characteristics and other characteristics required in a magnetron sputtering target are simultaneously pursued in a well balanced manner. This copper or copper alloy target/copper alloy backing plate assembly is used for magnetron sputtering, and the copper alloy backing plate is formed from low beryllium copper alloy or Cu—Ni—Si-based alloy. Further, with this copper or copper alloy target/copper alloy backing plate assembly, the copper alloy backing plate has electrical conductivity of 35 to 60% (IACS), and 0.2% proof stress of 400 to 850 MPa.
    Type: Grant
    Filed: November 30, 2004
    Date of Patent: October 18, 2016
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Takeo Okabe, Hirohito Miyashita
  • HIGH PURITY INDIUM AND MANUFACTURING METHOD THEREFOR
    Publication number: 20160289853
    Abstract: Provided is high purity Indium having a purity of 7N (99.99999%) or higher, and containing 0.05 ppm or less of Pb, 0.005 ppm or less of Zn, and 0.02 ppm or less of S. A method of producing high purity In, wherein SrCO3 is added to an electrolyte upon performing electrolytic refining using 5N (99.999%) In to reduce Pb, Zn and S to attain a purity of 7N (99.99999%) or higher. Under circumstances where In demands for LED, such as InGaN and AlInGaP, are anticipated, it is necessary to produce indium in mass quantities and inexpensively, and the present invention provides technology capable of achieving the same.
    Type: Application
    Filed: September 2, 2014
    Publication date: October 6, 2016
    Applicant: JX Nippon Mining & Metals Corporation
    Inventors: Eiji Hino, Hirohumi Obu
  • Cu-Co-Si-based copper alloy for electronic materials, and method of manufacturing same
    Patent number: 9460825
    Abstract: Disclosed is a Cu—Co—Si-based copper alloy for electronic materials, which is capable of achieving high levels of strength, electrical conductivity, and also anti-setting property; and contains 0.5 to 3.0% by mass of Co, 0.1 to 1.0% by mass of Si, and the balance of Cu and inevitable impurities; wherein out of second phase particles precipitated in the matrix a number density of the particles having particle size of 5 nm or larger and 50 nm or smaller is 1×1012 to 1×1014 particles/mm3, and a ratio of the number density of particles having particle size of 5 nm or larger and smaller than 10 nm relative to the number density of particles having particle size of 10 nm or larger and 50 nm or smaller is 3 to 6.
    Type: Grant
    Filed: April 8, 2011
    Date of Patent: October 4, 2016
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Hiroshi Kuwagaki
  • High-purity copper or high-purity copper alloy sputtering target, process for manufacturing the sputtering target, and high-purity copper or high-purity copper alloy sputtered film
    Patent number: 9441289
    Abstract: Provided is a high-purity copper or high-purity copper alloy sputtering target of which the purity is 6N or higher and in which the content of the respective components of P, S, O and C is 1 ppm or less, wherein the number of nonmetal inclusions having a particle size of 0.5 ?m or more and 20 ?m or less is 30,000 inclusions/g or less. As a result of using high-purity copper or high-purity copper alloy from which harmful inclusions of P, S, C and O system have been reduced as the raw material and controlling the existence form of nonmetal inclusions, the present invention addresses a reduction in the percent defect of wirings of semiconductor device formed by sputtering a high-purity copper target so as to ensure favorable repeatability.
    Type: Grant
    Filed: September 24, 2009
    Date of Patent: September 13, 2016
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Atsushi Fukushima, Yuichiro Shindo, Susumu Shimamoto
  • High-strength titanium copper foil and method for producing same
    Patent number: 9436065
    Abstract: To provide a high-strength titanium-copper foil that is more suitable as a conductive spring material that can be used in electronic device components such as an autofocus camera module. A titanium copper foil containing Ti in an amount of 2.0 to 4.0 mass %, a remainder being copper and unavoidable impurities, said foil having a 0.2% yield strength of 1000 MPa or more and a spring limit value of 800 MPa or more in both directions parallel and perpendicular to a rolling direction, wherein no cracking occurs at bending radius/foil thickness=2 when a W bending test in conformity with JIS H3130: 2012 is performed at a width of 0.5 mm in a direction perpendicular to the rolling direction.
    Type: Grant
    Filed: August 25, 2015
    Date of Patent: September 6, 2016
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Masayuki Nagano
  • METAL POWDER PASTE AND METHOD FOR PRODUCING SAME
    Publication number: 20160230026
    Abstract: A method for producing a surface-treated metal powder, which comprises: a step for preparing a metal powder dispersion liquid by mixing a metal powder with an aqueous solution of a coupling agent having an amino group; a step for recovering, as a residue, the metal powder from the metal powder dispersion liquid; and a step for cleaning the metal powder, which has been re-covered as a residue, with use of an aqueous solvent. This method for producing a surface-treated metal powder provides a method for producing a surface-treated copper powder or metal powder which has excellent sintering delaying properties and is suitable for use in the production of an electrode for multilayer ceramic chip capacitors.
    Type: Application
    Filed: August 12, 2014
    Publication date: August 11, 2016
    Applicant: JX NIPPON MINING & METALS CORPORATION
    Inventor: HIDEKI FURUSAWA
  • Cu-Ni-Si-Co copper alloy for electronic materials and manufacturing method thereof
    Patent number: 9401230
    Abstract: Cu—Ni—Si—Co copper alloy strip having excellent balance between strength and electrical conductivity which can prevent the drooping curl is provided. The copper alloy strip for an electronic materials contains 1.0-2.5% by mass of Ni, 0.5-2.5% by mass of Co, 0.3-1.2% by mass of Si, and the remainder comprising Cu and unavoidable impurities, wherein the copper alloy strip satisfies both of the following (a) and (b) as determined by means of X-ray diffraction pole figure measurement based on a rolled surface: (a) among a diffraction peak intensities obtained by ? scanning at ?=20° in a {200} pole figure, a peak height at ? angle 145° is not more than 5.2 times that of standard copper powder; (b) among a diffraction peak intensities obtained by ? scanning at ?=75° in a {111} pole figure, a peak height at ? angle 185° is not less than 3.4 times that of standard copper powder.
    Type: Grant
    Filed: November 11, 2011
    Date of Patent: July 26, 2016
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Hiroshi Kuwagaki
  • Low ?-dose tin or tin alloy, and method for producing same
    Patent number: 9394590
    Abstract: Disclosed is tin characterized in that a sample of the tin after melting and casting has an ? dose of less than 0.0005 cph/cm2. Since recent semiconductor devices are highly densified and of high capacity, there is an increasing risk of soft errors caused by the influence of ? rays emitted from materials in the vicinity of semiconductor chips. In particular, there are strong demands for high purification of solder materials and tin for use in the vicinity of semiconductor devices, and demands for materials with lower ? rays. Accordingly, an object of the present invention is to clarify the phenomenon of the generation of ? rays in tin and tin alloys, and to obtain high-purity tin, in which the ? dose has been reduced, suitable for the required materials, as well as a method for producing the same.
    Type: Grant
    Filed: February 14, 2011
    Date of Patent: July 19, 2016
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Gaku Kanou