Abstract: Provided is a tantalum coil for sputtering disposed between a substrate and a sputtering target, wherein the tantalum coil has irregularities so that the surface roughness Rz of the tantalum coil is 150 ?m or more and the number of threads is 15 to 30 TPI (Threads per inch) in a transverse direction and 10 to 30 TPI in a vertical direction. An object of the present invention is to take measures to prevent the sputtered grains accumulated on the surface of a tantalum coil from flaking so as to prevent the generation of particles and arcing that is caused by the flaking of the sputtered grains accumulated on the surface of the coil disposed between a substrate and a sputtering target, and the adhesion of the scattered flakes onto the substrate surface; and thereby to provide a technology of improving the quality and productivity of electronic components and stably providing semiconductor elements and devices.

Abstract: Provided is a copper alloy plate that is for an FPC substrate and that has superior heat dissipation, repeated bending workability, shape retaining properties, and heat resistance. The copper alloy plate contains at least 0.01 mass % of the total of at least one element selected from the group consisting of Ag, Cr, Fe, In, Ni, P, Si, Sn, Ti, Zn, and Zr, contains no more than 1.0 mass % of Ag, no more than 0.08 mass % of Ti, no more than 2.0 mass % of Ni, no more than 3.5 mass % of Zn, and no more than 0.5 mass % of Cr, Fe, In, P, Si, Sn, and Zr by the total of the at least one element selected from the group, the remainder comprising Cu and impurities, has a conductivity of at least 60% IACS, has a tensile strength of at least 350 MPa, and has I(311)/IO(311) determined by X-ray diffraction in the thickness direction of the plate surface that satisfies the formula I(311)/IO(311)?0.5.

Abstract: In the electrolytic refining of lead in a sulfamate bath, the production of a white residue is suppressed, and a decrease in the lead concentration in the electrolytic solution is suppressed. A method for electrolytically refining lead in a sulfamate bath, comprising performing electrolytic refining at a decomposition rate of sulfamic acid controlled at 0.06%/day or less.

Abstract: A copper foil for producing graphene including Cu having a purity of 99.95% by mass or more.

Abstract: The present invention increases the conversion efficiency of a photoelectric conversion element that uses cadmium zinc telluride or cadmium telluride (Cd(Zn)Te) compound semiconductor single crystals containing a group 1A element as an impurity. A heat-resistant pot is filled with raw material and a group 1A element, which is reacted with a portion of the raw material, and the container is heated, thereby melting the raw material into a melt and diffusing the dissociated group 1A element in the melt, producing single crystals from the melt. Compound semiconductor single crystals for photoelectric conversion elements having a hole concentration of 4×1015 cm?3 to 1×1018 cm?3 are produced in this manner. Using a substrate (2) that has been cut out from the compound semiconductor single crystals for photoelectric conversion elements enables the conversion efficiency of a photoelectric conversion element (10) to be increased.

Abstract: Provided are a lanthanum target for sputtering which has a Vickers hardness of 60 or more and no spotty macro patterns on the surface, and a method of producing a lanthanum target for sputtering, wherein lanthanum is melted and cast to produce an ingot, the ingot is subject to knead forging at a temperature of 300 to 500° C. and subsequently subject to upset forging at 300 to 500° C. to form the shape into a rough target shape, and this is additionally subject to machining to obtain a target. This invention aims to offer technology for efficiently and stably providing a lanthanum target for sputtering that has no spotty macro patterns on the surface, and a method of producing the same.

Abstract: High purity tin and tin alloy are provided in which the respective contents of U and Th are 5 ppb or less, the respective contents of Pb and Bi are 1 ppm or less, and the purity is 5N or higher, provided that this excludes the gas components of O, C, N, H, S and P. A cast ingot of the tin or alloy has an ? ray count of 0.001 cph/cm2 or less. Since recent semiconductor devices are densified and of large capacity, there is risk of a soft error occurring due to ? ray from materials in the vicinity of the semiconductor chip. Thus, there are demands for purifying soldering material used in the vicinity of semiconductor devices, and materials with fewer ? rays. The disclosed tin, alloy, and method reduce ? dose of tin so as to be adaptable as the foregoing material.

Abstract: A sputtering target according to the disclosure includes 5 wtppm to 10,000 wtppm of Cu and the balance of In and has a relative density of 99% or more and an average grain size of 3,000 ?m or less.

Abstract: Provided is a method of producing an ytterbium sputtering target, wherein an ytterbium target material having Vickers hardness (Hv) of the material surface of 15 or more and 40 or less is prepared in advance, and a surface of the ytterbium target material having the foregoing surface hardness is subject to final finish processing by way of machining. With the ytterbium sputtering target, present invention aims to remarkably reduce the irregularities (gouges) on the target surface after the final finish processing of the target material, and to inhibit the generation of particles during sputtering.

Abstract: The present invention provides a method for producing a positive electrode active material for lithium ion battery, having excellent tap density, at excellent production efficiency, and a positive electrode active material for lithium ion battery. The method for producing a positive electrode active material for lithium ion battery including a step of conducting a main firing after increasing mass percent of all metals in lithium-containing carbonate by 1% to 105% compared to the mass percent of all metals before a preliminary firing, by conducting the step of a preliminary firing to the lithium-containing carbonate, which is a precursor for positive electrode active material for lithium ion battery, with a rotary kiln.

Abstract: An Fe—Pt-based ferromagnetic material sputtering target comprising a metal and a metal oxide, wherein the metal has a composition in which Pt is contained in an amount of 5 mol % or more and 60 mol % or less and the remainder is Fe. An object of the present invention is to provide a ferromagnetic material sputtering target, which enables to form a magnetic recording layer composed of a magnetic phase such as an Fe—Pt alloy, and a non-magnetic phase to isolate the magnetic phase, and in which a metal oxide is used as one of the materials for the non-magnetic phase. Provided is a ferromagnetic material sputtering target wherein an inadvertent release of the metal oxide during sputtering and particle generation due to abnormal electrical discharge starting at a void inherently included in the target are suppressed, the adherence between the metal oxide and the matrix alloy is enhanced, and its density is increased.

Abstract: The present invention provides a metallic material for electronic components having a low degree of whisker formation and a high durability, and connector terminals, connectors and electronic components using the metallic material. The metallic material for electronic components includes: a base material; on the base material, an lower layer constituted with one or two or more selected from the group consisting of Ni, Cr, Mn, Fe, Co and Cu; on the lower layer, an upper layer constituted with an alloy composed of one or both of Sn and In (constituent elements A) and one or two or more of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir (constituent elements B), wherein the thickness of the lower layer is 0.05 ?m or more; the thickness of the upper layer is 0.005 ?m or more and 0.

Abstract: Provided is a target of sintered compact essentially consisting of an element of (A), an element of (B) and an element of (C) below, wherein the thermal conductivity is 2.5 W/mK or more and the oxygen concentration is 5000 ppm or more: (A) one or more chalcogenide elements selected from S, Se, and Te; (B) one or more Vb-group elements selected from Bi, Sb, As, P, and N; and (C) one or more IVb-group elements or IIIb-group elements selected from Ge, Si, C, Ga, and In. Also provided is a technology enabling stable DC sputtering, and stable and high-speed sputtering by applying high electric power, by improving heat accumulation and diffusion of volatile components due to the sputtering target having high thermal conductivity and low electric resistivity.

Abstract: Disclosed is a method of leaching copper and gold from sulfide ores, which includes Process (1) of bringing a first aqueous acidic solution which contains chlorine ion, copper ion and iron ion, but no bromine ion, into contact with sulfide ores under supply of an oxidizing agent, so as to leach copper component contained in the sulfide ores; Process (2) of separating, by solid-liquid separation, a leaching reaction liquid obtained in Process (1), into a leaching residue and a leachate; and Process (3) of bringing a second aqueous acidic solution which contains chlorine ion, bromine ion, copper ion and iron ion, into contact with the leaching residue obtained in Process (2) under supply of an oxidizing agent, so as to leach gold contained in the leaching residue.

Abstract: A quaternary alloy sputtering target composed of copper (Cu), indium (In), gallium (Ga) and selenium (Se), wherein a composition ratio of the respective elements is represented by a formula of CuxIn1-yGaySea (in the formula, 0.84?x?0.98, 0<y?0.5, a=(1/2)x+3/2), and a structure observed via EPMA is configured only from a Cu(In, Ga)Se2 phase without any heterogenous phase of Cu2Se or Cu(In, Ga)3Se5. Provided is a CIGS quaternary alloy sputtering target which is subject to hardly any abnormal discharge even when sputtered for a long period, which is free of any heterogenous phase of Cu2Se or Cu(In, Ga)3Se5 which causes the deterioration in the conversion efficiency of the film after being sputter-deposited, and which can produce a film having superior in-plane uniformity. Additionally provided is a CIGS quaternary alloy sputtering target having a predetermined bulk resistance and a high density.

Abstract: The present invention increases the conversion efficiency of a photoelectric conversion element that uses cadmium zinc telluride or cadmium telluride (Cd(Zn)Te) compound semiconductor single crystals containing a group 1A element as an impurity. A heat-resistant pot is filled with raw material and a group 1A element, which is reacted with a portion of the raw material, and the container is heated, thereby melting the raw material into a melt and diffusing the dissociated group 1A element in the melt, producing single crystals from the melt. Compound semiconductor single crystals for photoelectric conversion elements having a hole concentration of 4×1015 cm?3 to 1×1018 cm?3 are produced in this manner. Using a substrate (2) that has been cut out from the compound semiconductor single crystals for photoelectric conversion elements enables the conversion efficiency of a photoelectric conversion element (10) to be increased.

Abstract: A magnetic sputtering target which contains B and is obtained by a melting and casting method, wherein the B content is 10 at % or more and 50 at % or less, and the remainder is one or more elements selected from Co, Fe, and Ni. Based on the method of the present invention, the sputtering target, in which gaseous impurities are few, there are no cracks and fractures, and segregation of its main constituent elements is minimal, is obtained. Consequently, when sputtered with a magnetron sputtering device comprising a DC power supply, this sputtering target yields a significant effect of being able to inhibit the generation of particles during sputtering, and improve the production yield upon forming thin films.

Abstract: The present invention provides a positive electrode active material for lithium ion batteries, which realizes a lithium ion battery that is, while satisfying fundamental characteristics of a battery (capacity, efficiency, load characteristics), low in the resistance and excellent in the lifetime characteristics. In the positive electrode active material for lithium ion batteries, the variation in the composition of transition metal that is a main component inside of particles of or between particles of the positive electrode active material, which is defined as a ratio of the absolute value of the difference between a composition ratio inside of the particles of or in a small area between the particles of the transition metal and a composition ratio in a bulk state to the composition ratio in a bulk state of the transition metal, is 5% or less.

Abstract: A copper foil for producing graphene, having 60 degree gloss of 500% in a rolling direction and a direction transverse to rolling direction, and an average crystal grain size of 200 ?m or more after heating at 1000° C. for 1 hour in an atmosphere containing 20% by volume or more of hydrogen and balance argon.

Abstract: In this photoelectric conversion element wherein group III-IV compound semiconductor single crystals containing zinc as an impurity are used as a substrate, the substrate is increased in size without lowering conversion efficiency. A heat-resistant crucible is filled with raw material and a sealant, and the raw material and sealant are heated, thereby melting the raw material into a melt, softening the encapsulant, and covering the melt from the top with the encapsulant. The temperature inside the crucible is controlled such that the temperature of the top of the encapsulant relative to the bottom of the encapsulant becomes higher in a range that not equal or exceed the temperature of bottom of the encapsulant, and seed crystal is dipped in the melt and pulled upward with respect to the melt, thereby growing single crystals from the seed crystal.