Abstract: In a memory system using a storage medium, which is inserted into an electronic apparatus via a connector to add a memory function thereto, the storage medium has a GROUND terminal, a power supply terminal, a control terminal and a data input/output terminal, and the connector has a function of being sequentially connected to each of the terminals. When the storage medium is inserted into the connector, the GROUND terminal and control terminal of the storage medium are connected to corresponding terminals of the connector before the power supply terminal and data input/output terminal of the storage medium are connected to corresponding terminals of the connector. Thus, it is possible to improve the stability when a memory card is inserted into or ejected from the memory system.

Abstract: According to an aspect of the invention, an information processing apparatus configured to be connected to a conversion adaptor having a video input connector and a video output connector, the apparatus including: a video output port complying with the first standard for connection of the video input connector; an image processing module configured to output a first signal when the video input connector is not connected to the video output port, the image processing module being configured to output a second signal when the video input connector is connected to the video output port; and a bias module connected to the video output port and the image processing module and configured to output a third signal to the video output port, the bias module being configured to change physical layer information of the first signal or the second signal.

Abstract: According to one embodiment, a video encoding apparatus includes a motion vector calculation module, a motion boundary detection module, and a quantization parameter setting module. The motion vector calculation module calculates motion vectors for respective blocks in an input image. The motion boundary detection module detects a motion boundary between a motion region and a still region in the input image based on the motion vectors of the respective blocks. The quantization parameter setting module sets a value of a quantization parameter used to quantize a block that borders the detected motion boundary to a value smaller than a value which is set when the block does not border the motion boundary in accordance with a detection result of the motion boundary.

Abstract: An input device detects a position of an object in relation to a display by using the light emitting elements and light receiving elements. When the high accuracy is not required for the position detection, at least one of the light emitting elements and the light receiving elements is turned off.

Abstract: It is made possible to provide a method for manufacturing a semiconductor device that includes CMISs each having a low threshold voltage Vth and a Ni-FUSI/SiON or high-k gate insulating film structure. The method comprises: forming a p-type semiconductor region and an n-type semiconductor region insulated from each other in a substrate; forming a first and second gate insulating films on the p-type and n-type semiconductor regions, respectively; forming a first nickel silicide having a composition of Ni/Si<31/12 above the first gate insulating film, and a second nickel silicide having a composition of Ni/Si?31/12 on the second gate insulating film; and segregating aluminum at an interface between the first nickel silicide and the first gate insulating film by diffusing aluminum through the first nickel silicide.

Abstract: The electric charge of a capacitor can be reliably discharged. Therefore, an electric discharge controller has an electrically operated machine, an inverter, a capacitor, a voltage command value generating processor for generating a voltage command value for driving, an electric discharge control processor for generating a voltage command value for electric discharge, and a driving signal generating processor. When an electric current is supplied from a direct electric current source to the inverter, the driving signal generating processor generates a driving signal on the basis of the voltage command value for driving. When the supply of the electric current from the direct electric current source to the inverter is interrupted, the driving signal generating processor generates the driving signal on the basis of the voltage command value for electric discharge, and supplies the driving signal to the inverter.

Abstract: A catalyst includes a conductive carrier and catalyst particles. The catalyst particles are supported on the conductive carrier and have a composition represented by formula 1, below. An area of a peak derived from a metal bond of a T-element is 15% or more of an area of a peak derived from an oxygen bond of the T-element in a spectrum obtained by X-ray photoelectron spectroscopic method. PtxRuyTz??(1) where the T-element is at least one element selected from the group consisting of V, Nb and Hf, x is 30 to 60 at. %, y is 20 to 50 at. % and z is 5 to 50 at. %.

Abstract: There is provided is a nucleotide primer set for LAMP amplification used for detecting genotypes of single-nucleotide polymorphisms C677T and A1298C of an MTHFR gene. There is also provided a nucleotide probe for detecting an amplification product amplified by the primer set according to the present invention. There is also provided a method of detecting the genotypes of the single-nucleotide polymorphisms C677T and A1298C in the MTHFR gene, by using the primer set according to the present invention.

Abstract: An imaging apparatus includes: a camera head that is provided with an image pickup device that outputs an image signal; a camera control unit that is connected to the camera head with a camera cable and outputs a video signal based on the image signal; a CDS circuit that performs co-related double sampling on the image signal; a pulse generator that outputs sample pulses to the CDS circuit; a phase adjusting unit that performs phase adjustment on a clock signal and outputs the adjusted clock signal to the pulse generator; a peak search unit that searches for a peak range in the image signal being performed with the co-related double sampling by the CDS circuit; and a phase control unit that controls the phase adjustment by the phase adjusting unit based on a result of the search by the peak search unit.

Abstract: A manufacturing method of a semiconductor device is carried out as follows. A first mask layer having a first linear opening pattern is formed above the first interlayer insulating layer. A second mask layer having a plurality of second linear opening patterns and first dummy opening patterns is formed above the first mask layer. The plurality of second linear opening patterns are aligned above the first linear opening pattern at given intervals to cross the first linear opening pattern. The first dummy opening patterns are arranged in close proximity to a first pattern remaining region that is present between the second linear opening patterns adjacent to each other. The first interlayer insulating layer that is present below opening patterns obtained by overlap portions of the first linear opening pattern and the second linear opening patterns is etched to form holes.

Abstract: A semiconductor memory device operates using a first power supply and a second power supply. The device includes a static memory cell which receives the first power supply, a word line which is connected to the memory cell, and a decoder which controls selection/deselection of the word line on the basis of an address signal having a voltage of the second power supply. The decoder includes a level shifter which changes a voltage of the word line to a voltage of the first power supply, and a switching circuit which receives the first power supply and applies a voltage lower than the first power supply to the level shifter in selecting the word line.

Abstract: A semiconductor device includes: a semiconductor layer; an insulating film provided on the semiconductor layer; and a charge storage layer provided on the insulating film. The semiconductor layer has a channel formation region in its surface portion. The insulating film contains silicon, germanium, and oxygen. The charge storage layer is capable of storing charge supplied from the semiconductor layer through the insulating film. A method of manufacturing a semiconductor device includes: forming a silicon oxide film on a surface of a semiconductor layer; introducing germanium into the silicon oxide film; forming an insulating film containing silicon, germanium, and oxygen by heat treatment under oxidizing atmosphere; and forming a charge storage layer on the insulating film, the charge storage layer being capable of storing charge supplied from the semiconductor layer through the insulating layer.

Abstract: A readback apparatus (a) calculates a variance value of a signal read by a head from a disc medium, (b) estimates a degree of offtracking of the head from a target track to an adjacent track, and interference power from the adjacent track using the variance value of the signal, (c) calculates a soft decision likelihood value for the signal using the degree of offtracking and the interference power, and (d) performs error correcting decoding using the soft decision likelihood value.

Abstract: A semiconductor device includes: a first semiconductor layer of p-type AlxGa1-xN (0?x?1); a second semiconductor layer of n-type AlyGa1-yN (0<y<1, x<y) formed on the first semiconductor layer; a control electrode formed on the second semiconductor layer; a first main electrode connected to the first semiconductor layer and the second semiconductor layer; and a second main electrode connected to the second semiconductor layer. An interface between the first semiconductor layer and the second semiconductor layer has a surface orientation of (1-101) or (11-20).

Abstract: A memory cell array has memory cells, each of which has a ferroelectric capacitor and a selection transistor. A plate line is connected to one end of the ferroelectric capacitor and applied a certain plate line voltage. A sense amplifier circuit senses and amplifies voltage of the bit line. An error correction circuit corrects any error in retained data in the memory cells sensed by the sense amplifier. A plate line control circuit controls the timing for switching a potential of the plate line to a ground potential, based on absence or presence of error correction by the error correction circuit.

Abstract: A laser maintenance apparatus including a laser system which includes an optical system for emitting, in a first irradiation condition, a generation laser beam for generating an ultrasonic wave in a portion of an object on which maintenance is to be performed, and including a laser source configured to generate and detect a detection laser beam which interacts with the ultrasonic wave generated by the laser light beam in the first condition. The laser maintenance apparatus also includes a light transmitting device for transmitting laser light emitted from the laser system, a laser irradiation device for irradiating laser light transmitted by the light transmitting device to the object portion, and a transporting/scanning mechanism for transporting the light transmitting device and the laser irradiation device to a portion near the object portion, and scanning over an arbitrary range at the object portion.

Abstract: According to one embodiment, a private branch exchange includes a receiver which receives caller ID information divided into a plurality of packets, the caller ID information specifying a caller side telephone set, when receiving an incoming call, a measurement unit which measures an elapsed time after the receiver has received the packets, a reset unit which resets the elapsed time measured by the measurement unit when the receiver receives the packets, and a transmitter which transmits the packets received by the receiver to a private telephone set on an incoming call side, as caller ID information, when the elapsed time measured by the measurement unit exceeds a specified time.