Abstract: In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, “x” denotes an integer of three or more, and “y” and “z” respectively denote integers of one or more. Furthermore, the CxHyFz is the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.

Abstract: The present invention provides a method of producing high-purity molybdenum hexafluoride in good yield and a reaction apparatus therefor. The method of producing molybdenum hexafluoride in a production apparatus for molybdenum hexafluoride, which production apparatus includes a fixed bed that is for mounting metallic molybdenum and that extends inside a reactor from an upstream side to a downstream side of the reactor, a fluorine (F2) gas inlet provided on the upstream side of the reactor, and a reaction product gas outlet provided on the downstream side of the reactor, comprises bringing metallic molybdenum into contact with fluorine (F2) gas, where the fixed bed for mounting metallic molybdenum is tilted.

Abstract: An electrode for electrolytic fluorination contains nickel as a base material with a fluorine content <1,000 ppm. Preferably, in at least a surface portion thereof, the nickel content ?99 mass %, the iron content ?400 ppm, the copper content ?250 ppm, and the manganese content ?1,000 ppm. A method for producing an electrode includes arranging a nickel base material electrode in a nickel plating bath as a cathode, and applying nickel plating to the nickel base material electrode by electrolytic nickel plating, the method including (1) using, as an anode, a nickel component deposited on a cathode, or a nickel component that has settled in a molten salt, in a process of producing nitrogen trifluoride by molten salt electrolysis using a nickel base material anode, or the nickel base material anode; or (2) using, as the cathode, the nickel base material anode.

Abstract: Provided is a novel etching gas composition that comprises a sulfur-containing unsaturated compound and that is useful for etching a stacked structure of silicon-based films. A dry etching gas composition comprises a sulfur-containing fluorocarbon compound that has an unsaturated bond and that is represented by general formula (1) of CxFySz where x, y, and z are 2?x?5, y?2x, and 1?z?2.

Abstract: Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior. By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.

Abstract: Provided is a novel etching gas composition that comprises a sulfur-containing unsaturated compound and that is useful for etching a stacked structure of silicon-based films. A dry etching gas composition comprises a sulfur-containing fluorocarbon compound that has an unsaturated bond and that is represented by general formula (1) of CxFySz where x, y, and z are 2?x?5, y?2x, and 1?z?2.

Abstract: Provided is a novel etching gas composition that comprises a sulfur-containing compound and that can selectively etch SiO2 over low dielectric constant materials (low-k materials; SiON, SiCN, SiOCN, SiOC). A dry etching gas composition comprises a saturated and cyclic sulfur-containing fluorocarbon compound that is represented by general formula (1) of CxFySz where x, y, and z are 2?x?5, y?2x, and 1?z?2.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, “x” denotes an integer of three or more, and “y” and “z” respectively denote integers of one or more. Furthermore, the CxHyFz is the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.

Abstract: The present invention is a coating composition containing (A) a fluorine-containing copolymer and (B) a polycarbonate diol.

Abstract: Provided is a tank container which can accommodate and transport powder formed of hazardous material powder or the like while suppressing the contact of the powder with moisture in the air and an increase in temperature to a temperature equal to or higher than a predetermined temperature, and which can also easily discharge the powder, and a method of manufacturing the tank container.

Abstract: Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior. By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.

Abstract: The present invention aims to provide a method by which fluorine-containing sulfide compounds, particularly sulfide compounds that contain hydrogen and fluorine, can be produced in a simple, low-cost and industrial manner. Provided is a method of producing a fluorine-containing sulfide compound represented by the following formula (2): (F)n-A3-S-A4-(F)m??(2) (wherein A3 and A4 are independently an optionally substituted hydrocarbyl group with a carbon number of 1 to 3; n and m represent the numbers of fluorine atoms binding to A3 and A4, with n+m=1 to 13 being satisfied), comprising reacting a chlorine-containing sulfide compound represented by the following formula (1): (Cl)n-A1-S-A2-(Cl)m??(1) (wherein A1 and A2 are independently an optionally substituted hydrocarbyl group with a carbon number of 1 to 3; n and m represent the numbers of chlorine atoms binding to A1 and A2, with n+m=1 to 13 being satisfied) and a fluorinating agent.

Abstract: Disclosed is a nonaqueous electrolyte solution containing a lithium electrolyte, methyl 3,3,3-trifluoropropionate, and a phosphazene compound. Preferably, the phosphazene compound is a cyclic phosphazene compound represented by the disclosed general formula (I).

Abstract: Disclosed is a method for producing phosphorus pentafluoride, including mixing and reacting phosphorus trichloride and chlorine with a large excess of anhydrous hydrogen fluoride liquid, thereby producing phosphorus pentafluoride, wherein heat of reaction generated through the production of phosphorus pentafluoride is removed with latent heat of evaporation of hydrogen fluoride. It is preferable that the anhydrous hydrogen fluoride liquid is circulated, and, in this state, phosphorus trichloride and chlorine are mixed with the anhydrous hydrogen fluoride liquid. Furthermore, it is also preferable that the anhydrous hydrogen fluoride liquid is circulated along a circulation path, or that the anhydrous hydrogen fluoride liquid is circulated through stirring in a reaction vessel.

Abstract: A dry etching gas composition is used which contains a saturated or unsaturated hydrofluorocarbon compound (excluding 1,2,2,3-pentafluorocyclobutane and 1,1,2,2-tetrafluorocyclobutane) represented by a general formula (1): CxHyFz (where x, y, and z are integers that satisfy 2?x?4, y+z?2x+2, and 0.5<z/y<2). Use of the etching gas composition containing the above-described hydrofluorocarbon makes it possible to selectively etch a nitrogen-containing silicon-based film (b1) with respect to a silicon oxide film, a non-silicon-based mask material, or a polycrystalline silicon film.

Abstract: This invention provides a cleaning method that uses a cleaning gas composition for a semiconductor manufacturing device, including a monofluorohalogen compound represented by XF (in which X is Cl, Br or I) as the main component, and provides a method for removing unwanted film, such as a Si-containing deposit, attached to the interior of the processing room or processing vessel after a processing operation without damaging the interior of the processing room or processing vessel using such monofluorohalogen compound.

Abstract: An electrolytic cell has a partition that covers an upper region of one electrode of an anode and a cathode in order to separate a gas generated from the anode and a gas generated from the cathode from each other. The partition has wall surfaces that are each opposite a surface of the electrode. The wall surfaces have, in lower end-side regions thereof, ribs extending in a direction that has a lateral direction component. The ribs and the partition are made of a fluororesin and are integrally formed.

Abstract: Provided is a plasma etching method that enables, in a semiconductor fabrication process, selective processing of a film consisting of a single material, such as SiO2 or SiN, or a composite material of SiO2 and SiN over a mask material as well as processing into satisfactorily vertical processed shapes.

Abstract: Provided are a method and a device that do not require any pretreatment and measure and analyze impurities or hydrogen fluoride in corrosive gas with high sensitivity. The method and the device measure a fluorine-based gas in a sample containing a corrosive gas with a Fourier transform infrared spectrophotometer, wherein the Fourier transform infrared spectrophotometer includes a detector having an InGaAs detection element and a single-path gas cell having an optical path length of 0.01 m to 2 m, a cell window is made of a corrosion-resistant material, a measurement region ranges from 3800 to 14300 cm?1 in wavenumber, and the concentration of the fluorine-based gas is quantified based on an amount of absorption of light having a predetermined wavenumber by the sample and a calibration curve.

Abstract: A method of atomic layer etching a silicon oxide film or a silicon nitride film is provided. Atomic layer etching (ALE) is performed by repeating three steps of (1) hydrogenation step of hydrogenating a surface by irradiating a silicon oxide film or a silicon nitride film with a plasma containing H, (2) acid halide adsorption step of causing chemisorption of an acid halide represented by a formula of Rf—COX (Rf is H, F, a substituent consisting of C and F or consisting of C, H, and F, or —COX; each X is independently any halogen atom of F, Cl, Br and I) on the surface by reacting the acid halide with the hydrogenated surface through exposure to the acid halide, and (3) etching step of etching a single atomic layer by inducing chemical reactions on the surface of the acid halide-adsorbed silicon oxide film or silicon nitride film through irradiation with a plasma containing a noble gas (at least any one of He, Ar, Ne, Kr, and Xe).