Abstract: An object of the present invention is to provide a simple, low-cost, and industrial method of producing a compound having a polyene skeleton containing hydrogen and fluorine and/or chlorine. A method of producing a halogenated diene represented by formula (1): A1A2C?CA3-CA4=CA5A6 [A1, A2, A5, and A6 are each independently hydrogen, fluorine, chlorine, a (perfluoro)alkyl group having 1 to 3 carbon atoms, or a (perfluoro)alkenyl group; A3 and A4 are each independently hydrogen, fluorine, or chlorine; at least one of A1 to A6 is hydrogen; at least one of A1 to A6 is fluorine or chlorine] comprises a step of subjecting the same or different halogenated olefin(s) represented by formula (2): A7A8C?CA9X [A7 and A8 are each independently hydrogen, fluorine, chlorine, a (perfluoro)alkyl group having 1 to 3 carbon atoms, or a (perfluoro)alkenyl group; A9 is each independently hydrogen, fluorine, or chlorine; X is bromine or iodine] to a coupling reaction in the presence of a zero-valent metal and a metal salt.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, “x” denotes an integer of three or more, and “y” and “z” respectively denote integers of one or more. Furthermore, the CxHyFz is the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.

Abstract: Provided are a method of producing high-purity molybdenum hexafluoride in good yield and a reaction apparatus therefor. The method of producing molybdenum hexafluoride, in a production apparatus for molybdenum hexafluoride including a fixed bed that is for mounting metallic molybdenum and that extends inside a reactor from an upstream side to a downstream side of the reactor, a fluorine (F2) gas inlet provided on the upstream side of the reactor, and a reaction product gas outlet provided on the downstream side of the reactor, comprises bringing metallic molybdenum into contact with fluorine (F2) gas, where the fixed bed for mounting metallic molybdenum is tilted.

Abstract: A material at least partly coated with a passive film of fluoride formed by contact with a gas containing ClF.

Abstract: In a method for gas-flow carrying a solid particle, the solid particle includes a solid substance generating a dissociation equilibrium reaction that dissociates at least one type of gas component, and the solid particle is carried by a gas flow containing the gas component. The average particle diameter of the solid particle is preferably 0.1-1.0 mm. The solid particle is preferably carried by the gas flow in the state of a suspended flow, a fluidized flow, or a plug flow. The solid particle preferably includes a solid substance to generate a dissociation equilibrium reaction that dissociates at least one gas component and at least one solid component, and the solid particle is preferably carried by the gas flow in a carrying pipe and the solid particle or the solid component that has adhered to the interior surface of the carrying pipe is removed by the gas flow.

Abstract: A chlorine fluoride feeding device and feeding process are provided that can stably generate industrially applicable chlorine fluoride (ClF), control flow rate, and provide continual feed. The feeding process of chlorine fluoride of this invention is a feeding process to feed chlorine fluoride generated by loading a gas that contains fluorine atoms and a gas that contains chlorine atoms to a flow-type heat reactor or a plasma reactor, and it can stably generate and safely feed chlorine fluoride for a long time by reacting chlorine fluoride that is difficult to pack at a high pressure, such that an amount that can be packed in a gas container such as a gas cylinder is limited, with two or more types of gas materials that can be packed safely in a gas container by liquefaction, or with such gas material and a solid material.

Abstract: Provided are a method and a device that do not require any pretreatment and measure and analyze impurities or hydrogen fluoride in corrosive gas with high sensitivity. The method and the device measure a fluorine-based gas in a sample containing a corrosive gas with a Fourier transform infrared spectrophotometer, wherein the Fourier transform infrared spectrophotometer includes a detector having an InGaAs detection element and a single-path gas cell having an optical path length of 0.01 m to 2 m, a cell window is made of a corrosion-resistant material, a measurement region ranges from 3800 to 14300 cm?1 in wavenumber, and the concentration of the fluorine-based gas is quantified based on an amount of absorption of light having a predetermined wavenumber by the sample and a calibration curve.

Abstract: Disclosed is a method for purifying a difluorophosphate, the method including mixing a difluorophosphate containing an impurity with at least one treatment agent selected from the group consisting of carbonates, hydroxides, and halides of alkali metals or alkali earth metals and amines to isolate the impurity. It is preferable that the method further include filtering off, by filtration, a salt or a complex that has been formed by allowing the impurity to be mixed with the treatment agent. Preferably, a carbonate, a hydroxide, or a halide of an alkali metal is used as the treatment agent, and more preferably a carbonate, a hydroxide, or a halide of lithium is used as the treatment agent.

Abstract: The present invention is a paint composition containing (A) a fluorine-containing copolymer, (B) a solvent and (C) a resin particle satisfying the following conditions 1 to 5: condition 1: an average particle size of the resin particle is 0.1 to 50 ?m; condition 2: a refractive index of the resin particle at 20° C. is 0.8 to 1.2 times that of a film composed of the fluorine-containing copolymer (A) at 20° C.; condition 3: a 10% compression strength of the resin particle is 40 MPa or less; condition 4: a compressibility of the resin particle is 20% or more; and condition 5: the resin particle does not suffer from brittle fracture under a load force of 0.1 mN.

Abstract: A silicon oxide film or a silicon nitride film is selectively etched by using an etching gas composition including a hydrofluorocarbon that has an unsaturated bond in its molecule and is represented by CxHyFz, wherein x is an integer of from 3 to 5, and relationships y+z?2x and y?z are satisfied. Also, a silicon oxide film is etched with high selectivity relative to a silicon nitride film by controlling the ratio among the hydrofluorocarbon, oxygen, argon, etc., included in the hydrofluorocarbon-containing etching gas composition.

Abstract: A method for producing a fluorinated alkane represented by the formula (2): R2-F (R2 represents an alkyl group having 3 to 5 carbon atoms) is provided. An alcohol having 3 to 5 carbon atoms is fluorinated by a fluorinating agent represented by the formula (1): R1SO2F (R1 represents a methyl group, an ethyl group or an aromatic group) in the absence of a solvent, and in the presence of a phosphazene base.

Abstract: A simple production process is provided of a perfluoroalkyl compound that uses monohydroperfluoroalkane as a starting material, the perfluoroalkyl compound being an important intermediate of organic electronic materials, medicine, agricultural chemicals, functional polymer materials and the like. With monohydroperfluoroalkane is reacted a base and then a carbonyl compound to produce an alcohol having a perfluoroalkyl group. For example, potassium hydroxide is made to interact with trifluoromethane, and a reaction with a carbonyl compound is induced to produce an alcohol having a trifluoromethyl group.

Abstract: A silicon oxide film or a silicon nitride film is selectively etched by using an etching gas composition including a hydrofluorocarbon that has an unsaturated bond in its molecule and is represented by CxHyFz, wherein x is an integer of from 3 to 5, and relationships y+z?2x and y?z are satisfied. Also, a silicon oxide film is etched with high selectivity relative to a silicon nitride film by controlling the ratio among the hydrofluorocarbon, oxygen, argon, etc., included in the hydrofluorocarbon-containing etching gas composition.

Abstract: The present invention provides: a method for producing a fluorinated alkane represented by the formula (2): R2—F, wherein an alcohol having 3 to 5 carbon atoms is fluorinated by a fluorinating agent represented by the formula (1): R1SO2F in the absence of a solvent, and in the presence of an amidine base. In the formula, R1 represents a methyl group, an ethyl group or an aromatic group, R2 represents an alkyl group having 3 to 5 carbon atoms, and n is 0 or 2.

Abstract: Provided are an etching gas composition and an etching method which enable an object, such as a substrate to be etched, to be efficiently precision processed during thin film formation, and which enable efficient removal of an accumulated or adhered silicon-based compound, other than the object such as the substrate to be etched, by means of plasma etching. The etching gas composition is characterized by containing: (1) a fluorinated halogen compound represented by XF (X is Cl, Br or I) as a primary component; (2) F2; (3) a fluorinated halogen compound represented by XFn (X is Cl, Br or I, and n is an integer of 3 or higher); (4) HF; (5) O2; and (6) at least one type of halogen gas molecule selected from among Cl2, Br2 and I2.

Abstract: A material at least partly coated with a passive film of fluoride formed by contact with a gas containing ClF.

Abstract: A method for obtaining high-purity phosphorus pentafluoride (PF5), which is industrially useful in the fields of semiconductors and batteries, from PF5 containing a gas mixture of HCl, HF, and so on. Specifically, provided is a process for purifying phosphorus pentafluoride including (1) an immobilization step in which phosphorus pentafluoride containing a mixture is brought into contact with a metal fluoride (MFn; M is an n-valent metal) having a specific surface area of 1.0 m2/g or more at 40° to 150° C. to immobilize phosphorus pentafluoride in the form of a hexafluorophosphate (M(PF6)n), (2) a separation step in which the mixture remaining in the gas phase is expelled out of the reaction system to separate the mixture from the hexafluorophosphate, and (3) a heat-decomposition step in which the hexafluorophosphate freed of the mixture is heated at 150° to 400° C. under a pressure of ?0.1 to 0.1 MPa·G to give phosphorus pentafluoride.

Abstract: The present invention provides: a method for producing a fluorinated alkane represented by the formula (2): R2—F, wherein an alcohol having 3 to 5 carbon atoms is fluorinated by a fluorinating agent represented by the formula (1): R1SO2F in the absence of a solvent, and in the presence of a base selected from the group consisting of an amidine base and a phosphazene base; a method for separating and recovering an amidine base from an amidine base-sulfonate complex represented by the following formula (5); and a method for using a recovered amidine base. In the formula, R1 represents a methyl group, an ethyl group or an aromatic group, R2 represents an alkyl group having 3 to 5 carbon atoms, and n is 0 or 2.

Abstract: The purpose of the present invention is to provide a method for easily producing a difluorophosphate using only low-cost starting materials without requiring cumbersome operations. According to the present invention, at least one salt selected from the group consisting of halides, carbonates, borates, phosphates, hydroxides and oxides of an alkali metal, an alkaline earth metal or an onium, at least one phosphorus compound selected from the group consisting of oxychlorides and chlorides of phosphorus, water and hydrogen fluoride are reacted.

Abstract: Provided are a nonaqueous electrolyte for secondary batteries containing an electrolyte having high solubility in ethylene carbonate, propylene carbonate, dimethyl carbonate, diethyl carbonate, ethyl methyl carbonate, or a like solvent and capable of forming a good-quality film on the positive and the negative electrode interface and a nonaqueous secondary battery having the nonaqueous electrolyte. Specifically, an electrolyte for secondary batteries containing a lithium salt as a solute and a nonaqueous solvent is provided, the nonaqueous solvent containing a monofluorophosphoric ester salt having general formula 1 or 2, in which symbols are as defined in the description.