Abstract: Systems and methods of a two-pass inspection methodology that dynamically creates micro care areas for inspection of repeater defects. Micro care areas can be formed around each location of a repeater defect. After inspection, additional repeater defects in the micro care areas can be identified. Attributes of the repeater defects can be compared and any repeater defects with attributes that deviate from an expected group attribute distribution can be classified as nuisance.

Abstract: Metrology methods, systems and targets are provided, which implement a side by side paradigm. Adjacent cells with periodic structures are used to extract the overlay error, e.g., by introducing controllable phase shifts or image shifts which enable algorithmic computation of the overlay. The periodic structures are designed to exhibit a rotational symmetry to support the computation and reduce errors.

Abstract: A system includes a controller with one or more processors and memory configured to store one or more sets of program instructions. The one or more processors are configured to execute the one or more sets of program instructions. The one or more sets of program instructions are configured to cause the one or more processors to apply filtering to a semiconductor wafer map; separate the filtered semiconductor wafer map into a plurality of dies; generate a set of die comparison statistics for the plurality of dies; generate at least one excursion map by applying at least one inspection threshold to the set of die comparison statistics; and detect at least one excursion within the at least one excursion map.

Abstract: Metrology targets and target design methods are provided, in which target elements are defined by replacing elements from a periodic pattern having a pitch p, by assist elements having at least one geometric difference from the replaced elements, to form a composite periodic structure that maintains the pitch p as a single pitch. Constructing targets within the bounds of compatibility with advanced multiple patterning techniques improves the fidelity of the targets and fill factor modulation enables adjustment of the targets to produce sufficient metrology sensitivity for extracting the overlay while achieving process compatibility of the targets.

Abstract: Wafer geometry measurement tools and methods for providing improved wafer geometry measurements are disclosed. Wafer front side, backside and flatness measurements are taken into consideration for semiconductor process control. The measurement tools and methods in accordance with embodiments of the present disclosure are suitable for handling any types of wafers, including patterned wafers, without the shortcomings of conventional metrology systems.

Abstract: Metrology methods and targets are provided, that expand metrological procedures beyond current technologies into multi-layered targets, quasi-periodic targets and device-like targets, without having to introduce offsets along the critical direction of the device design. Several models are disclosed for deriving metrology data such as overlays from multi-layered target and corresponding configurations of targets are provided to enable such measurements. Quasi-periodic targets which are based on device patterns are shown to improve the similarity between target and device designs, and the filling of the surroundings of targets and target elements with patterns which are based on device patterns improve process compatibility. Offsets are introduced only in non-critical direction and/or sensitivity is calibrated to enable, together with the solutions for multi-layer measurements and quasi-periodic target measurements, direct device optical metrology measurements.

Abstract: A method may include, but is not limited to, receiving a plurality of reference images of a wafer. The method may include, but is not limited to, receiving the plurality of test images of the wafer. The method may include, but is not limited to, aligning the plurality of reference images and the plurality of test images via a coarse alignment process. The method may include, but is not limited to, aligning the plurality of reference images and the plurality of test images via a fine alignment process after alignment via the coarse alignment process. The fine alignment process may include measuring individual offsets and correcting individual offset data between at least one of the plurality of reference images and the plurality of test images.

Abstract: A mechanical testing system having a frame, and a stage for holding a sample. An arm for pressing a tool against a surface of the sample. A primary actuator is connected to the frame and applies a primary force and drives the tool relative to the sample, thereby causing the frame to flex. A displacement sensor measures a displacement value comprised of two components, the first component including a distance traveled by the probe into the sample as the primary force is applied, and the second component including a measure of a degree of flex of the frame as the primary force is applied. A compensating actuator is connected to the frame and applies a compensating force that reduces the second component of the displacement value.

Abstract: A system includes one or more wafer geometry measurement tools configured to obtain geometry measurements from a wafer. The system also includes one or more processors in communication with the one or more wafer geometry measurement tools. The one or more processors are configured to apply a correction model to correct the geometry measurements obtained by the one or more wafer geometry measurement tools. The correction model is configured to correct measurement errors caused by a transparent film positioned on the wafer.

Abstract: Systems and methods are provided, which calculate overlay misregistration error estimations from analyzed measurements of each ROI (region of interest) in at least one metrology imaging target, and incorporate the calculated overlay misregistration error estimations in a corresponding estimation of overlay misregistration. Disclosed embodiments provide a graduated and weighted analysis of target quality which may be integrated in a continuous manner into the metrology measurement processes, and moreover evaluates target quality in terms of overlay misregistration, which forms a common basis for evaluation of errors from different sources, such as characteristics of production steps, measurement parameters and target characteristics.

Abstract: A system for generating pump illumination for laser sustained plasma (LSP) is disclosed. In embodiments, the system includes an illumination source configured to output illumination having a first spectral frequency and an optical frequency converter. The optical frequency converter can be configured to receive the illumination having the first spectral frequency from the illumination source and configured to output pump illumination having a second spectral frequency that is different from the first spectral frequency.

Abstract: A system is configured to perform metrology on a front surface, a back surface opposite the front surface, and/or an edge between the front surface and the back surface of a wafer. This can provide all wafer metrology and/or metrology of thin films on the back surface of the wafer. In an example, the thickness and/or optical properties of a thin film on a back surface of a wafer can be determined using a ratio of a greyscale image of a bright field light emerging from the back surface of the wafer under test to that of a reference wafer.

Abstract: An electron source is formed on a silicon substrate having opposing first and second surfaces. At least one field emitter is prepared on the second surface of the silicon substrate to enhance the emission of electrons. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitter using a process that minimizes oxidation and defects. The field emitter can take various shapes such as pyramids and rounded whiskers. One or several optional gate layers may be placed at or slightly lower than the height of the field emitter tip in order to achieve fast and accurate control of the emission current and high emission currents. The field emitter can be p-type doped and configured to operate in a reverse bias mode or the field emitter can be n-type doped.

Abstract: Repeater analysis at a first threshold identifies repeater defects. The repeater defects are located at a coordinate that is the same on each reticle. Images on every reticle of the semiconductor wafer at the coordinate are received, and a plurality of signed difference images are obtained. A repeater threshold for signed difference images is calculated, as is consistency of the polarity. The threshold is applied to the images and a number of defects per each repeater that remain are determined. A secondary repeater threshold can be applied for nuisance filtering.

Abstract: Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moiré patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moiré patterns.

Abstract: Methods and systems for detecting a particle defect on a wafer surface, transforming the particle to a spectroscopically active state, and identifying a material composition of the activated particle by a spectroscopic technique are described herein. Particle defects are transformed by chemical treatment, thermal treatment, photochemical treatment, or a combination thereof, such that an activated particle exhibits atomic vibrational bands that can be observed spectroscopically. In one embodiment, a surface inspection system detects the presence of a particle defect on a wafer surface, activates observable Raman bands in one or more of the detected particles, and identifies the material composition of the activated particle by a spectroscopic technique.

Abstract: Apparatus and methods for performing optically based film thickness measurements of highly absorbing films (e.g., high-K dielectric films) with improved measurement sensitivity are described herein. A highly absorbing film layer is fabricated on top of a highly reflective film stack. The highly reflective film stack includes one or more nominally identical sets of multiple layers of different, optically contrasting materials. The highly reflective film stack gives rise to optical resonance in particular wavelength ranges. The high reflectance at the interface of the highly absorbing film layer and the highly reflective film stack increases measured light intensity and measurement sensitivity. The thickness and optical dispersion of the different material layers of the highly reflective film stack are selected to induce optical resonance in a desired wavelength range. The desired wavelength range is selected to minimize absorption by the highly absorbing film under measurement.

Abstract: An inspection system includes a controller communicatively coupled to a physical inspection device (PID), a virtual inspection device (VID) configured to analyze stored PID data, and a defect verification device (DVD). The controller may receive a pattern layout of a sample including multiple patterns fabricated with selected lithography configurations defining a process window, receive locations of PID-identified defects identified through analysis of the sample with the PID, wherein the PID-identified defects are verified by the DVD, remove one or more lithography configurations associated with the locations of the PID-identified defects from the process window, iteratively refine the process window by removing one or more lithography configurations associated with VID-identified defects identified through analysis of selected portions of stored PID data with the VID, and provide, as an output, the process window when a selected end condition is met.

Abstract: A pick-and-place head for picking a plurality of work-pieces from at least one first location and for placing the plurality of work-pieces at least one second location is disclosed. The pick-and-place head exhibits a plurality of nozzles, wherein each nozzle is configured to engage one of the work-pieces by action of a vacuum. At least one nozzle has an individual vacuum supply and at least two further nozzles have a shared vacuum supply. A corresponding method is also disclosed, the method including the steps of approaching at least one of the plurality of work-pieces with a respective nozzle and then starting generation of a vacuum at each respective nozzle. The generation of vacuum in at least one nozzle is achieved by an individual vacuum supply, and generation of vacuum in at least two further nozzles is achieved by a shared vacuum supply of the at least two further nozzles.

Abstract: A method to collect data and train, validate and deploy statistical models to predict overlay errors using patterned wafer geometry data and other relevant information includes selecting a training wafer set, measuring at multiple lithography steps and calculating geometry differences, applying a plurality of predictive models to the training wafer geometry differences and comparing predicted overlay to the measured overlay on the training wafer set. The most accurate predictive model is identified and the results fed-forward to the lithography scanner tool which can correct for these effects and reduce overlay errors during the wafer scan-and-expose processes.