Abstract: Methods and systems for characterizing dimensions and material properties of semiconductor devices by transmission small angle x-ray scatterometry (TSAXS) systems having relatively small tool footprint are described herein. The methods and systems described herein enable Q space resolution adequate for metrology of semiconductor structures with reduced optical path length. In general, the x-ray beam is focused closer to the wafer surface for relatively small targets and closer to the detector for relatively large targets. In some embodiments, a high resolution detector with small point spread function (PSF) is employed to mitigate detector PSF limits on achievable Q resolution. In some embodiments, the detector locates an incident photon with sub-pixel accuracy by determining the centroid of a cloud of electrons stimulated by the photon conversion event. In some embodiments, the detector resolves one or more x-ray photon energies in addition to location of incidence.

Abstract: A scatterometry metrology system, configured to measure diffraction signals from at least one target having respective at least one measurement direction, the scatterometry metrology system having at least one field stop having edges which are slanted with respect to the at least one measurement direction.

Abstract: Diffraction-based focus target cells, targets and design and measurement methods are provided, which enable sensitive focus measurements to be carried out by overlay measurement tools. Cells comprise a periodic structure having a coarse pitch and multiple elements arranged at a fine pitch. The coarse pitch is an integer multiple of the fine pitch, with the fine pitch being between one and two design rule pitches and smaller than a measurement resolution and the coarse pitch being larger than the measurement resolution. The elements are asymmetric to provide different amplitudes in +1st and ?1st diffraction orders of scattered illumination, and a subset of the elements has a CD (critical dimension) larger than a printability threshold and the other elements have a CD smaller than the printability threshold.

Abstract: Methods and systems for inline parts average testing and latent reliability defect recognition or detection are disclosed. An inline parts average testing method may include: performing inline inspection and metrology on a plurality of wafers at a plurality of critical steps during wafer fabrication; aggregating inspection results obtained from inline inspection and metrology utilizing one or more processors to obtain a plurality of aggregated inspection results for the plurality of wafers; identifying one or more statistical outliers among the plurality of wafers at least partially based on the plurality of aggregated inspection results obtained for the plurality of wafers; and disqualifying the one or more statistical outliers from entering a supply chain for a downstream manufacturing process, or segregating the one or more statistical outliers for further evaluation, testing or repurposing.

Abstract: Disclosed is a system that includes a light source for generating an illumination beam and an illumination lens system for directing the illumination beam towards a sample. The system further includes a collection lens system for directing towards a detector output light from the sample in response to the illumination beam and a detector for receiving the output light from the sample. The collection lens system includes a fixed-design compensator plate having individually selectable filters with different configurations for correcting system aberration of the system under different operating conditions. The system also includes a controller operable for: (i) generating and directing the illumination beam towards the sample, (ii) selecting operating conditions and a filter for correcting the system aberration under such selected operating conditions, (iii) generating an image based on the output light, and (iv) determining whether the sample passes inspection or characterizing such sample based on the image.

Abstract: A dual-column-parallel image CCD sensor utilizes a dual-column-parallel readout circuit including two pairs of cross-connected transfer gates to alternately transfer pixel data (charges) from a pair of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the two adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at twice the line clock rate to pass the image charges to the shared output circuit. A symmetrical Y-shaped diffusion is utilized in one embodiment to merge the image charges from the two pixel columns. A method of driving the dual-column-parallel CCD sensor with line clock synchronization is also described. A method of inspecting a sample using the dual-column-parallel CCD sensor is also described.

Abstract: A device and method for expediting spectral measurement in metrological activities during semiconductor device fabrication through interferometric spectroscopy of white light illumination during calibration, overlay, and recipe creation.

Abstract: Metrology methods and modules are provided, which comprise carrying out recipe setup procedure(s) and/or metrology measurement(s) using zonal analysis with respect to respective setup parameter(s) and/or metrology metric(s). The zonal analysis comprises relating to spatially variable values of the setup parameter(s) and/or metrology metric(s) across one or more wafers in one or more lots. Wafer zones may be discrete or spatially continuous, and be used to weight one or more parameter(s) and/or metric(s) during any of the stages of the respective setup and measurement processes.

Abstract: A particle-beam inspection system may include a reflective particle-beam imaging system providing an image of a selected portion of a sample and a diffraction pattern of the selected portion of the sample and a controller communicatively coupled to the reflective particle-beam imaging system. The controller may receive two or more sample-plane images from the reflective particle-beam imaging system associated with two or more selected portions of the sample, where at least some of the two or more selected portions of the sample overlap. The controller may further receive two or more diffraction-plane images from the reflective particle-beam imaging system associated with the two or more selected portions of the sample. The controller may further construct one or more output images of the two or more selected portions of the sample from the two or more diffraction-plane images using phase information obtained from the two or more sample-plane images.

Abstract: Metrology overlay targets are provided, as well as method of monitoring process shortcomings. Targets comprise periodic structures, at least one of which comprising repeating asymmetric elements along a corresponding segmentation direction of the periodic structure. The asymmetry of the elements may be designed in different ways, for example as repeating asymmetric sub-elements along a direction perpendicular to the segmentation direction of the elements. The asymmetry of the sub-elements may be designed in different ways, according to the type of monitored process shortcomings, such as various types of hot spots, line edge shortening, process windows parameters and so forth. Results of the measurements may be used to improve the process and/or increase the accuracy of the metrology measurements.

Abstract: Metrology target designs on the reticle and on the wafer, and target design and processing methods are provided. Target designs comprise coarse pitched periodic structures having fine pitched sub-elements, which vary in sub-element CD and/or height, an orthogonal periodic structure, perpendicular to the measurement direction, with an orthogonal unresolved pitch among periodically recurring bars, which provide a calibration parameter for achieving well-printed targets. Orthogonal periodic structures may be designed on the reticle and be unresolved, or be applied in cut patterns on the process layer, with relatively low sensitivity to the cut layer overlay. Designed targets may be used for overlay metrology as well as for measuring process parameters such as scanner aberrations and pitch walk.

Abstract: The generation of flexible sparse metrology sample plans includes receiving a full set of metrology signals from one or more wafers from a metrology tool, determining a set of wafer properties based on the full set of metrology signals and calculating a wafer property metric associated with the set of wafer properties, calculating one or more independent characterization metrics based on the full set of metrology signals, and generating a flexible sparse sample plan based on the set of wafer properties, the wafer property metric, and the one or more independent characterization metrics. The one or more independent characterization metrics of the one or more properties calculated with metrology signals from the flexible sparse sampling plan is within a selected threshold from one or more independent characterization metrics of the one or more properties calculated with the full set of metrology signals.

Abstract: An optical characterization system utilizing a micro-lens array (MLA) is provided. The system may include an electron source and a MLA including a micro-deflection array (MDA). The MDA may include an insulator substrate and a plurality of hexapole electrostatic deflectors disposed on the insulator substrate. The MDA may further include a plurality of voltage connecting lines configured to electrically couple the plurality of hexapole electrostatic deflectors to one or more voltage sources. The MDA may be configured to split a primary electron beam from the electron source into a plurality of primary electron beamlets. The system may be configured to focus the plurality of primary electron beamlets at a wafer plane.

Abstract: A photocathode utilizes an field emitter array (FEA) integrally formed on a silicon substrate to enhance photoelectron emissions, and a thin boron layer disposed directly on the output surface of the FEA to prevent oxidation. The field emitters are formed by protrusions having various shapes (e.g., pyramids or rounded whiskers) disposed in a two-dimensional periodic pattern, and may be configured to operate in a reverse bias mode. An optional gate layer is provided to control emission currents. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer. An optional external potential is generated between the opposing illuminated and output surfaces. An optional combination of n-type silicon field emitter and p-i-n photodiode film is formed by a special doping scheme and by applying an external potential. The photocathode forms part of sensor and inspection systems.

Abstract: A flat top laser beam is used to generate an electron beam with a photocathode that can include an alkali halide. The flat top profile can be generated using an optical array. The laser beam can be split into multiple laser beams or beamlets, each of which can have the flat top profile. A phosphor screen can be imaged to determine space charge effects or electron energy of the electron beam.

Abstract: Methods and systems for realizing a high brightness, liquid based x-ray source suitable for high throughput x-ray metrology are presented herein. A high brightness x-ray source is produced by bombarding a rotating liquid metal anode material with a stream of electrons to generate x-ray radiation. A rotating anode support structure supports the liquid metal anode material in a fixed position with respect to the support structure while rotating at the constant angular velocity. In another aspect, a translational actuator is coupled to the rotating assembly to translate the liquid metal anode in a direction parallel to the axis of rotation. In another aspect, an output window is coupled to the rotating anode support structure. Emitted x-rays are transmitted through the output window toward the specimen under measurement. In another further aspect, a containment window maintains the shape of the liquid metal anode material independent of rotational angular velocity.

Abstract: A system, method, and non-transitory computer readable medium are provided for tuning sensitivities of, and determining a process window for, a modulated wafer. The sensitivities for dies of the modulated wafer are tuned dynamically based on a single set of parameters. Further, the process window is determined for the modulated wafer from prior determined parameter-specific nominal process windows.

Abstract: Disclosed is apparatus for inspecting a sample. The apparatus includes illumination optics for simultaneously directing a plurality of incident beams at a plurality of azimuth angles towards a sample and collection optics for directing a plurality of field portions of output light from two or more of the plurality of angles towards two or more corresponding sensors. The two or more sensors are arranged for receiving the field portions corresponding to two or more angles and generating two or more corresponding images. The apparatus further comprises a processor for analyzing the two or more images to detect defects on the sample.

Abstract: A lens system includes a curved primary mirror and an aspheric secondary mirror. The aspheric secondary mirror has a diameter smaller than that of the primary mirror and shares an optical axis with the primary mirror. The aspheric secondary mirror and the primary mirror are rotationally symmetric with respect to the optical axis. A support member, which may be transparent over an operating wavelength of the lens system, is disposed on the aspheric secondary mirror.

Abstract: Methods and systems for providing weak pattern (or hotspot) detection and quantification are disclosed. A weak pattern detection and quantification system may include a wafer inspection tool configured to inspect a wafer and detect defects present on the wafer. The system may also include at least one processor in communication with the wafer inspection tool. The at least one processor may be configured to: perform pattern grouping on the detected defects based on design of the wafer; identify regions of interest based on the pattern grouping; identify weak patterns contained in the identified regions of interest, the weak patterns being patterns deviating from the design by an amount greater than a threshold; validate the identified weak patterns; and report the validated weak patterns or facilitate revision of the design of the wafer based on the validated weak patterns.