Abstract: Systems and methods for providing an augmented input data to a convolutional neural network (CNN) are disclosed. Wafer images are received at a processor. The wafer image is divided into a plurality of references images each associated with a die in the wafer image. Test images are received. A plurality of difference images are created by differences the test images with the reference images. The reference images and difference images are assembled into the augmented input data for the CNN and provided to the CNN.

Abstract: Metrology methods and systems are provided, in which the detected image is split at a field plane of the collection path of the metrology system's optical system into at least two pupil plane images. Optical elements such as prisms may be used to split the field plane images, and multiple targets or target cells may be measured simultaneously by spatially splitting the field plane and/or the illumination sources and/or by using two polarization types. The simultaneous capturing of multiple targets or target cells increases the throughput of the disclosed metrology systems.

Abstract: Defect detection on transparent or translucent wafers can be performed on a die using references from the same die. A first calculated value based on a kernel size, such as a moving mean, is determined. A first difference is determined by subtracting the first calculated value from a pixel intensity. Candidate pixels with a first difference above a threshold are classified. A second calculated value based on a kernel size, such as a local median, is determined. A second difference is determined by subtracting the second calculated value from the pixel intensity. Pixels that include a defect are classified when the second difference is above the threshold.

Abstract: Systems and methods for prediction and measurement of overlay errors are disclosed. Process-induced overlay errors may be predicted or measured utilizing film force based computational mechanics models. More specifically, information with respect to the distribution of film force is provided to a finite element (FE) model to provide more accurate point-by-point predictions in cases where complex stress patterns are present. Enhanced prediction and measurement of wafer geometry induced overlay errors are also disclosed.

Abstract: A lithography mask is disclosed. The lithography mask includes at least one asymmetric segmented pattern element. A particular asymmetric segmented pattern element includes at least two segments with a separation distance between consecutive segments smaller than a resolution of a set of projection optics for generating an image of the particular asymmetric segmented pattern element on a sample such that the image of the particular asymmetric segmented pattern element is an unsegmented pattern image. A position of the unsegmented pattern image on the sample is indicative of a location of the sample along an optical axis of the set of projection optics.

Abstract: Methods and respective modules are provided, configured to identify registration errors of DSA lines with respect to guiding lines in a produced structure, by comparing a measured signature of the structure with simulated signatures corresponding to simulated structures having varying simulated characteristics, and characterizing the produced structure according to the comparison. The characterization may be carried out using electromagnetic characterization of a geometric model or in a model-free manner by analyzing model-based results. Thus, for the first time, positioning and dimensional errors of DSA lines may be measured.

Abstract: An overlay metrology system includes an overlay metrology tool configurable to generate overlay signals with a plurality of recipes and further directs an illumination beam to an overlay target and collects radiation emanating from the overlay target in response to the at least a portion of the illumination beam to generate the overlay signal with the particular recipe. The overlay metrology system further acquires two or more overlay signals for a first overlay target using two or more unique recipes, subsequently acquires two or more overlay signals for a second overlay target using the two or more unique recipes, determines candidate overlays for the first and second overlay targets based on the two or more overlay signals for each target, and determines output overlays for the first and second overlay targets based on the two or more candidate overlays for each target.

Abstract: A system, method, and computer program product are provided for automatically determining a parameter causing an abnormal semiconductor metrology measurement. In use, an abnormal semiconductor metrology measurement measured from a fabricated semiconductor component is received. At least one parameter of the fabricated semiconductor component causing the abnormal semiconductor metrology measurement is then automatically determined by one or more hardware processors.

Abstract: Disclosed are methods and apparatus for qualifying a photolithographic reticle. A reticle inspection tool is used to acquire a plurality of images at different imaging configurations from each of a plurality of pattern areas of a test reticle. A reticle near field is recovered for each of the pattern areas of the test reticle based on the acquired images from each pattern area of the test reticle. The recovered reticle near field is then used to determine whether the test reticle or another reticle will likely result in unstable wafer pattern or a defective wafer.

Abstract: A photocathode structure, which can include an alkali halide, has a protective film on an exterior surface of the photocathode structure. The protective film includes ruthenium. This protective film can be, for example, ruthenium or an alloy of ruthenium and platinum. The protective film can have a thickness from 1 nm to 20 nm. The photocathode structure can be used in an electron beam tool like a scanning electron microscope.

Abstract: A wideband spectrograph apparatus includes a first spectrograph assembly and one or more subsequent spectrograph assemblies. Each subsequent spectrograph assembly is optically coupled to a previous spectrograph assembly and is configured to receive a cascading beam from one or more dispersion elements of the previous spectrograph assembly. The first spectrograph assembly is configured for detecting illumination in a first wavelength range and the one or more subsequent spectrograph assemblies are configured for detecting illumination in wavelength ranges different from the first or any previous wavelength ranges to provide simultaneous sampling of different spectral portions of an input beam.

Abstract: Systems, methods, apparatuses, and articles of manufacture are provided for recovering a digitized spectrum and may comprise: an optical system configured to transform rays, the optical system including a diffraction grating, a steering mirror, a stage, and an actuator configured to move one of the stage, diffraction grating, or steering mirror according to a movement regime to vary an incidence of the rays on the stage; a sensor array disposed on the stage configured to receive the rays incident from the optical system at a plurality of measurement locations to obtain a plurality of ray spectra; and a processor electrically connected to the sensor array configured to receive the ray spectra, interleave the ray spectra to yield an interleaved spectrum, and deconvolve a point spread function corresponding to the optical system from the interleaved spectrum to yield a recovered digitized spectrum.

Abstract: A semiconductor fabrication system includes a target design device and a multi-stage fabrication tool configured to fabricate one or more layers of a sample using the fabrication process. The target design device receives metrology design rules associated with a metrology tool in which the metrology design rules include criteria for one or more physical attributes of metrology targets measurable with the metrology tool. The target design device may further receive process design rules associated with a fabrication process in which the process design rules include criteria for determining process stages of the fabrication process required to fabricate structures with selected physical attributes.

Abstract: A scanning electron microscopy (SEM) system includes a plurality of electron-optical columns and a plurality of electron beam sources. The electron beam sources include an emitter including one or more emitter tips configured to generate one or more electron beams of a plurality of electron beams. The electron beam sources include a stack of one or more positioners configured to adjust a position of the emitter based on one or more measurements of the electron beam generated by the emitter. The emitter is configured to scan the one or more electron beams across an area surrounding a bore of an electron-optical column of the plurality of electron-optical columns. The electron beam source array includes a carrier plate and a source tower. The source tower is configured to adjust a position of the plurality of electron beam sources relative to a position of the plurality of electron-optical columns.

Abstract: Systems and methods are disclosed for storing dynamic layer content in a design file. A design file is received having design data corresponding to a plurality of process layers. A geometric operation formula is also received. A processor generates a polygon having dynamic layer content that is formed by applying the geometric operation formula on two or more of the plurality of process layers. The updated design file is stored, the design file now having a polygon having dynamic layer content.

Abstract: Dynamic removal of correlation of highly-correlated parameters for optical metrology is described. An embodiment of a method includes determining a model of a structure, the model including a set of parameters; performing optical metrology measurement of the structure, including collecting spectra data on a hardware element; during the measurement of the structure, dynamically removing correlation of two or more parameters of the set of parameters, an iteration of the dynamic removal of correlation including: generating a Jacobian matrix of the set of parameters, applying a singular value decomposition of the Jacobian matrix, selecting a subset of the set of parameters, and computing a direction of the parameter search based on the subset of parameters. If the model does not converge, performing one or more additional iterations of the dynamic removal of correlation until the model converges; and if the model does converge, reporting the results of the measurement.

Abstract: A system for controlling an etch process includes an etching tool, a metrology tool, and a controller. The etching tool is controllable via a set of control parameters and may execute a plurality of etch recipes containing values of the set of control parameters. The controller may direct the etching tool to execute a plurality of etch recipes on a plurality of metrology targets; direct the metrology tool to generate metrology data indicative of two or more etch characteristics on the plurality of metrology targets; determine one or more relationships between the two or more etch characteristics and the set of control parameters based on the metrology data; and generate, based on the one or more relationships, a particular etch recipe to constrain one of the two or more etch characteristics and maintain the remainder of the two or more etch characteristics within defined bounds.

Abstract: An optical system for generating broadband light via light-sustained plasma formation includes a chamber, an illumination source, a set of focusing optics, and a set of collection optics. The chamber is configured to contain a buffer material in a first phase and a plasma-forming material in a second phase. The illumination source generates continuous-wave pump illumination. The set of focusing optics focuses the continuous-wave pump illumination through the buffer material to an interface between the buffer material and the plasma-forming material in order to generate a plasma by excitation of at least the plasma-forming material. The set of collection optics receives broadband radiation emanated from the plasma.

Abstract: Systems and method are presented for identifying process variations during manufacture of products such as semiconductor wafers. At a predetermined stage during manufacture of a first products, images of an area of the first product are obtained using different values of at least one imaging parameter. The images are then analyzed to generate a first contrast signature for said first product indicating variations of contrast with said at least one imaging parameter. At the same predetermined stage during manufacture of a second product, images of an area of said second product are obtained corresponding to said area of said first product using different values of said at least one imaging parameter. The images are analyzed to generate a second contrast signature for said second product indicating variations of contrast with said at least one imaging parameter.

Abstract: Systems and methods for improving results of wafer higher order shape (HOS) characterization and wafer classification are disclosed. The systems and methods in accordance with the present disclosure are based on localized shapes. A wafer map is partitioned into a plurality of measurement sites to improve the completeness of wafer shape representation. Various site based HOS metric values may be calculated for wafer characterization and/or classification purposes, and may also be utilized as control input for a downstream application. In addition, polar grid partitioning schemes are provided. Such polar grid partitioning schemes may be utilized to partition a wafer surface into measurement sites having uniform site areas while providing good wafer edge region coverage.