Abstract: An illumination system, an inspection tool and a method for inspecting an object are disclosed. A configurable area light source is arranged in an illumination optical axis of an illumination beam path, wherein the configurable area light source is configured such that different beam diameters are settable. At least one illumination lens is positioned in the illumination beam path for directing a collimated beam at least onto a field of view on a surface of the object, wherein a value of an angle of incidence of the illumination optical axis of the illumination beam path equals a value of an angle of reflectance of the imaging optical axis of the imaging beam path. The invention allows the combination of the functionality of a wide angle coaxial illumination and a collimated coaxial illumination in one illumination system.

Abstract: Methods and systems for combining information present in measured images of semiconductor wafers with additional measurements of particular structures within the measured images are presented herein. In one aspect, an image-based signal response metrology (SRM) model is trained based on measured images and corresponding reference measurements of particular structures within each image. The trained, image-based SRM model is then used to calculate values of one or more parameters of interest directly from measured image data collected from other wafers. In another aspect, a measurement signal synthesis model is trained based on measured images and corresponding measurement signals generated by measurements of particular structures within each image by a non-imaging measurement technique.

Abstract: An apparatus for fixing a wafer, including a chuck having a surface, a plurality of through bores in the chuck extending through the surface of the chuck, a fixed vacuum bellows, and a plurality of floating air bearings, wherein the fixed vacuum bellows and a respective floating air bearing of the plurality of floating air bearings are each individually arranged in separate through bores of the plurality of through bores and elevationally above the surface of the chuck.

Abstract: Two or more color data can be combined to form a new data source to enhance sensitivity to defocus signal. Defocus detection can be performed on the newly formed data source. In a setup step, a training wafer can be used to select the best color combination, and obtain defocus detection threshold. This can include applying a segment mask, calculating mean intensities of the segment, determining a color combination that optimizes defocus sensitivity, and generating a second segment mask based on pixels that are above a threshold to sensitivity. In a detection step, the selected color combination is calculated, and the threshold is applied to obtain defocus detection result.

Abstract: A process control technique uses production data from multiple manufacturing tools and multiple inspection or metrology tools. Total measurement uncertainty (TMU) can be calculated on the production data, which can include measurements of one or more devices manufactured using the manufacturing tools. Manufacturing steps can be ranked or otherwise compared by TMU. All production modes and recipes can be continually monitored using production data.

Abstract: A metrology system includes an illumination source to generate an illumination beam, a multi-channel spectral filter, a focusing element to direct illumination from the single optical column to a sample, and at least one detector to capture the illumination collected from the sample. The multi-channel spectral filter includes two or more filtering channels having two or more channel beam paths. The two or more filtering channels filter illumination propagating along the two or more channel beam paths based on two or more spectral transmissivity distributions. The multi-channel spectral filter further includes a channel selector to direct at least a portion of the illumination beam into at least one selected filtering channel to filter the illumination beam. The multi-channel spectral filter further includes at least one beam combiner to combine illumination from the two or more filtering channels to a single optical column.

Abstract: Notch detection methods and modules are provided for efficiently estimating a position of a wafer notch. Capturing an image of specified region(s) of the wafer, a principle angle is identified in a transformation, converted into polar coordinates, of the captured image. Then the wafer axes are recovered from the identified principle angle as the dominant orientations of geometric primitives in the captured region. The captured region may be selected to include the center of the wafer and/or certain patterns that enhance the identification and recovering of the axes. Multiple images and/or regions may be used to optimize image quality and detection efficiency.

Abstract: Feature extraction and classification is used for process window monitoring. A classifier, based on combinations of metrics of masked die images and including a set of significant combinations of one or more segment masks, metrics, and wafer images, is capable of detecting a process non-compliance. A process status can be determined using a classifier based on calculated metrics. The classifier may learn from nominal data.

Abstract: Methods and systems for measuring a specimen while actively stabilizing an optical measurement beam subject to changes in polarization by a rotating polarizer element are described herein. Movement of a focused measurement beam spot induced by a rotating polarizer element is compensated by actively controlling the position of an optical element in the beam path based on measurements of the focused measurement beam spot. Both feedback and feedforward control schemes may be employed to reduce beam position error. In one aspect, a measurement system includes a rotating optical polarizer, a beam position sensor, and an active beam compensating element in the illumination beam path, the collection beam path, or both. Beam position errors are detected by the beam position sensor, and control commands are communicated to the active beam compensating element to reduce the measured beam position errors.

Abstract: Methods and systems for estimating values of parameters of interest of structures fabricated on a wafer with a signal response metrology (SRM) model trained based on reference measurement data collected from the same wafer are presented herein. In one aspect, the SRM model is an input-output model trained to establish a functional relationship between reference measurements of structures fabricated on the wafer to raw measurement data collected from the same wafer. The raw measurement data collected from the wafer is employed for training the SRM model and for performing measurements using the trained SRM model. In another aspect, the SRM model uses the entire set of raw measurement data collected from a number of measurement sites across the wafer for both training and subsequent measurement at each individual site. In a further aspect, the SRM model is trained and utilized to measure each parameter of interest individually.

Abstract: Metrology methods and modules are provided, which comprise measuring intensity spatial distributions and peaks of spots at the pupil plane of a metrology system that correspond to various diffraction orders scattered from target cells and calculating overlay(s) of the target cell(s) from the measured intensity spatial distributions and peaks. For example, intensity peak or distribution of zeroth diffraction orders from four cells, first diffraction orders from two cells as well as diffraction orders from a single cell may be used to derive an overlay estimation, which may also be compared to standard overlay measurements for different purposes. Intensity spatial distributions may also be used to derive weight function for adjusting measurements or the metrology system.

Abstract: A two-dimensional nanoindentation measurement apparatus includes a first actuator that imparts a first force in a first direction, and a second actuator that imparts a second force in a second direction orthogonal to the first direction. A first elongate member has a first end attached to the first actuator and a second end attached to an indenter tip that engages the surface of the sample. A second elongate member includes a first end attached to the second actuator and a second end connected to the second end of the first elongate member. The first elongate member is rigid in the first direction and compliant in the second direction, and the second elongate member is rigid in the second direction and compliant in the first direction. The first force is imparted to the indenter tip in the first direction through the first elongate member, and the second force is imparted to the indenter tip in the second direction through the second elongate member.

Abstract: Systems and methods for tool health monitoring and matching through integrated real-time data collection, event prioritization, and automated determination of matched states through image analysis are disclosed. Data from the semiconductor production tools can be received in real-time. A control limit impact (CLI) of the parametric data and the defect attributes data can be determined and causation factors can be prioritized. Image analysis techniques can compare images and can be used to judge tool matching, such as by identifying one of the states at which the two or more of the semiconductor manufacturing tools match.

Abstract: A sample analysis system includes a scanning electron microscope, an optical and/or eBeam inspection system, and an optical metrology system. The system further includes at least one controller. The controller is configured to receive a first plurality of selected regions of interest of the sample; generate a first critical dimension uniformity map based on a first inspection performed by the scanning electron microscope at the first selected regions of interest; determine a second plurality of selected regions of interest based on the first critical dimension uniformity map; generate a second critical dimension uniformity map based on a second inspection performed by the optical and/or eBeam inspection system at the second selected regions of interest; and determine one or more process tool control parameters based on inspection results and on overlay measurements performed on the sample by the optical metrology system.

Abstract: A high-dimensional variable selection unit determines a list of critical parameters from sensor data and parametric tool measurements from a semiconductor manufacturing tool, such as a semiconductor inspection tool or other types of semiconductor manufacturing tools. The high-dimensional variable selection model can be, for example, elastic net, forward-stagewise regression, or least angle regression. The list of critical parameters may be used to design a next generation semiconductor manufacturing tool, to bring the semiconductor manufacturing tool back to a normal status, to match a semiconductor manufacturing tool's results with that of another semiconductor manufacturing tool, or to develop a specification for the semiconductor manufacturing tool.

Abstract: Methods and systems for reducing the effect of finite source size on illumination beam spot size for Transmission, Small-Angle X-ray Scatterometry (T-SAXS) measurements are described herein. A beam shaping slit having a slender profile is located in close proximity to the specimen under measurement and does not interfere with wafer stage components over the full range of angles of beam incidence. In one embodiment, four independently actuated beam shaping slits are employed to effectively block a portion of an incoming x-ray beam and generate an output beam having a box shaped illumination cross-section. In one aspect, each of the beam shaping slits is located at a different distance from the specimen in a direction aligned with the beam axis. In another aspect, the beam shaping slits are configured to rotate about the beam axis in coordination with the orientation of the specimen.

Abstract: A method of generating 3D information includes: varying the distance between the sample and an objective lens of the optical microscope at pre-determined steps, capturing an image at each pre-determined step; determining a characteristic value of each pixel in each captured image; determining, for each captured image, the greatest characteristic value across all pixels in the captured image; comparing the greatest characteristic value for each captured image to determine if a surface of the sample is present at each pre-determined step; determining a first captured image that is focused on a first surface of the sample based on the characteristic value of each pixel in each captured image; determining a second captured image that is focused on a second surface of the sample based on the characteristic value of each pixel in each captured image; and determining a first distance between the first surface and the second surface.

Abstract: Methods and systems for characterizing dimensions and material properties of high aspect ratio, vertically manufactured devices using transmission, small-angle x-ray scattering (T-SAXS) techniques are described herein. Exemplary structures include spin transfer torque random access memory (STT-RAM), vertical NAND memory (V-NAND), dynamic random access memory (DRAM), three dimensional FLASH memory (3D-FLASH), resistive random access memory (Re-RAM), and PC-RAM. In one aspect, T-SAXS measurements are performed at a number of different orientations that are more densely concentrated near the normal incidence angle and less densely concentrated at orientations that are further from the normal incidence angle. In a further aspect, T-SAXS measurement data is used to generate an image of a measured structure based on the measured intensities of the detected diffraction orders. In another further aspect, a metrology system is configured to generate models for combined x-ray and optical measurement analysis.

Abstract: One embodiment relates to a method for run-time correction of defect locations on a substrate during defect review. The substrate is loaded into a stage of a review apparatus, and coordinates for the defect locations on the substrate is received. The defect locations are grouped, and at least one local reference site in proximity to each group of defect locations is determined. The local reference site(s) is (are) used to determine a positional offset for the defect locations in each group. Another embodiment relates to an apparatus for reviewing defect locations on a substrate which provides for run-time correction of the defect locations. Other embodiments and features are also disclosed.

Abstract: A multi-column scanning electron microscopy (SEM) system is disclosed. The SEM system includes a source assembly. The source assembly includes two or more electron beam sources configured to generate a plurality of electron beams. The source assembly also includes two or more sets of positioners configured to actuate the two or more electron beam sources. The SEM system also includes a column assembly. The column assembly includes a plurality of substrate arrays. The column assembly also includes two or more electron-optical columns formed by a set of column electron-optical elements bonded to the plurality of substrate arrays. The SEM system also includes a stage configured to secure a sample that at least one of emits or scatters electrons in response to the plurality of electron beams directed by the two or more electron-optical columns to the sample.