Abstract: A method and system for providing illumination is disclosed. The method may include providing a laser having a predetermined wavelength; performing at least one of: beam splitting or beam scanning prior to a frequency conversion; converting a frequency of each output beam of the at least one of: beam splitting or beam scanning; and providing the frequency converted output beam for illumination.

Abstract: An optical metrology includes a library, a metrology tool and a library evolution tool. The library is generated to include a series of predicted measurements. Each predicted measurement is intended to match the measurements that a metrology device would record when analyzing a corresponding physical structure. The metrology tool compares its empirical measurements to the predicted measurements in the library. If a match is found, the metrology tool extracts a description of the corresponding physical structure from the library. The library evolution tool operates to improve the efficiency of the library. To make these improvements, the library evolution tool statistically analyzes the usage pattern of the library. Based on this analysis, the library evolution tool increases the resolution of commonly used portions of the library. The library evolution tool may also optionally reduce the resolution of less used portions of the library.

Abstract: One embodiment relates to a computer-implemented method of processing spectral luminescence mapping data obtained from a substrate, the substrate having an epitaxial layer stack that includes a multiple quantum well. A spectral luminescence and an epi thickness at a location on the substrate are obtained. A spectral modulation for the location may be computed given the epi thickness and material indices of refraction. The underlying luminescence spectrum may then be generated by dividing the measured spectral luminescence by the spectral modulation. Subsequently, a peak wavelength and other parameters may be obtained from the underlying luminescence spectrum. In another embodiment, the underlying luminescence spectrum may be determined, without the epi thickness measurement, using a self-consistent technique. Another embodiment relates to an apparatus for spectral luminescence mapping and epitaxial thickness measurement. Other embodiments, aspects and features are also disclosed.

Abstract: A pulsed laser system includes a variable attenuator located in a secondary optical path bounded by a target surface and one or more reflective surfaces outside of the primary laser oscillator of the laser system. The variable attenuator isolates an output optical amplifier of the laser system from light reflected from the target during time periods between laser pulses. In some embodiments, the variable attenuator is synchronously controlled with the primary laser oscillator. In some other embodiments, the variable attenuator is controlled separately from the primary laser oscillator to shape the generated laser pulses.

Abstract: The disclosure is directed to a system and method of providing illumination for reticle inspection. According to various embodiments of the disclosure, a multiplexing mirror system receives pulses of illumination from a plurality of illumination sources and directs the pulses of illumination along an illumination path to a plurality of field mirror facets. The field mirror facets receive at least a portion of illumination from the illumination path and direct at least a portion of the illumination to a plurality of pupil mirror facets. The pupil mirror facets receive at least a portion of illumination reflected from the field mirror facets and direct the portion of illumination along a delivery path to a reticle for imaging and/or defect inspection.

Abstract: Methods and systems for matching critical dimension measurement applications at high precision across multiple optical metrology systems are presented. In one aspect, machine parameter values of a metrology system are calibrated based on critical dimension measurement data. In one further aspect, calibration of the machine parameter values is based on critical dimension measurement data collected by a target measurement system from a specimen with assigned critical dimension parameter values obtained from a reference measurement source. In another further aspect, the calibration of the machine parameter values of a target measurement system is based on measurement data without knowledge of critical dimension parameter values. In some examples, the measurement data includes critical dimension measurement data and thin film measurement data.

Abstract: The disclosure is directed to a photomultiplier tube with extended dynamic range. According to various embodiments, a repulsive electric field is introduced between a photocathode and a plurality of dynodes in order to repel or block low-energy electrons from reaching and being multiplied by the dynodes. As a result, time intervals between current peaks and drops may be decreased because the photomultiplier current will be primarily affected by high-energy electrons emitted by the photocathode in response to incident illumination versus low-energy electrons, some of which may result from dangling bonds or slow surface states after illumination no longer impinges the photocathode. Dynamic range and optical responsiveness of the photomultiplier tube are increased accordingly.

Abstract: An exclusion region of interest imaging overlay target includes a self-symmetric target structure including two or more pattern elements, and an additional target structure including two or more pattern elements, wherein each of pattern elements of the additional target structure is contained within a boundary defined by one of the pattern elements of the self-symmetric target structure, wherein the self-symmetric target structure is characterized by a composite exterior region of interest, wherein the composite exterior region of interest is formed by removing two or more exclusion zones corresponding with the pattern elements of the additional target structure from an exterior region of interest encompassing the self-symmetric target structure, wherein each of the pattern elements of the additional target structure is characterized by an interior region of interest, wherein the self-symmetric target structure and the additional target structure are configured to have a common center of symmetry upon alignme

Abstract: One embodiment relates to a focused electron beam imaging apparatus. The apparatus includes an electron beam column, an electron source, a gun lens, a pre-scanning deflector, a main scanning deflector, an objective lens, and a detector. The pre-scanning deflector comprises a 12-pole electrostatic deflector which is configured to controllably deflect the electron beam away from the optical axis of the electron beam column. Another embodiment relates to a method of scanning an electron beam over a target substrate in a focused electron beam imaging instrument. The electron beam is controllably deflected, without third-order deflection aberrations, away from an optical axis of an electron beam column using a pre-scanning deflector. The electron beam is then controllably deflected back towards the optical axis using a main scanning deflector so that the electron beam passes through a center of an objective electron lens. Other embodiments, aspects and features are also disclosed.

Abstract: A surface inspection system, as well as related components and methods, are provided. The surface inspection system includes a beam source subsystem, a beam scanning subsystem, a workpiece movement subsystem, an optical collection and detection subsystem, and a processing subsystem. The system features a variable polarization a polarizing relay assembly arranged to selectively permit the scattered light having a selected polarization orientation to pass along a detector optical axis to a light detection unit in the detection subsystem. The system also features a collector output width varying subsystem for varying the width of an output slit in response to changes in the location of the location scanned on the workpiece.

Abstract: The present invention may include a first dopant metrology system configured to measure a first plurality of values of at least one parameter of a wafer, an ion implanter configured to implant a plurality of ions into the wafer, a second dopant metrology system configured to measure a second plurality of values of at least one parameter of the wafer following ion implantation of the wafer by the implanter, wherein the first dopant metrology system and the second dopant metrology system are communicatively coupled, an annealer configured to anneal the wafer following ion implantation, and a third dopant metrology system configured to measure a third plurality of values of at least one parameter of the wafer following annealing of the wafer by the annealer, wherein the second dopant metrology system and the third dopant metrology system are communicatively coupled.

Abstract: Systems and methods for monitoring time-varying classification performance are disclosed.

Abstract: A stream of defect data is received from a reticle inspection system. The defect data identifies defects that were detected for a plurality of different portions of a reticle. Before reviewing the defect data to determine whether the reticle passes inspection and as the stream of defect data continues to be received, some of the defects are automatically grouped with other most recently one or more received defects on as form groups of substantially matching defects. Before reviewing the defect data to determine whether the reticle passes inspection and after all of the defect data for the reticle is received, one or more of the groups of defects that have a number above a predetermined threshold are automatically filtered from the defect data on as to form filtered defect data. The filtered defect data may then be provided to a review station for determining whether the reticle passes.

Abstract: Systems configured to inspect a wafer are provided. One system includes an illumination subsystem configured to illuminate a set of spots on a wafer and a collection subsystem configured to collect light from the set of spots. The collection subsystem separately images the light collected from each of the individual spots onto only a corresponding first detector of a first detection subsystem. The collection subsystem also images the light collected from at least some of the individual spots onto a number of second detectors of a second detection subsystem that is less than a number of spots in the set. Output produced by the first and second detectors can be used to detect defects on the wafer.

Abstract: A detection method for a spot image based thin line detection is disclosed. The method includes a step for generating a band limited spot image from a transmitted and reflected optical image of the mask. The spot image is calibrated to minimize a plurality of optical aberrations from the spot image. The spot image is restored back to a mask image to allow at least one of: a more reliable segmentation between thin line and non-thin line areas on the mask image or a more accurate line width measurement for facilitating segmentation. Thin line features and non-thin lines features are distinguished on the restored mask image. Areas containing thin line features are grown while preventing the thin line growth from encroaching the non-thin line features.

Abstract: Controlling particles near a reticle of a lithography or reticle inspection system may include generating a curtain of ultraviolet light about a reticle protection area of a reticle by illuminating a region surrounding the reticle protection area with ultraviolet light having sufficient energy to induce a charge on one or more particles traversing the curtain of ultraviolet light, generating an electric field in a region positioned between the generated curtain of ultraviolet light and the reticle protection area, the electric field generated between a first charging element and a second charging element having an opposite charge to the first charging element, directing one or more charged particles to the first charging element or the second charging element using the generated electric field; and capturing the one or more charged particles on the first charging element or the second charging element.

Abstract: Contamination may be removed from a field emitter unit during operation of the emitter unit in an environment at a pressure that lies within a range between 10?6 torr and 10?8 torr. At regular predetermined intervals an electron beam from an emitter tip may be deflected away from a path through a beam defining aperture and onto an electron collector. An electron beam current to the electron collector may be determined and the emitter unit may be flash heated if the current to the electron collector is below a threshold. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: Various metrology systems and methods are provided. One metrology system includes a light source configured to produce a diffraction-limited light beam, an apodizer configured to shape the light beam in the entrance pupil of illumination optics, and optical elements configured to direct the diffraction-limited light beam from the apodizer to an illumination spot on a grating target on a wafer and to collect scattered light from the grating target. The metrology system further includes a field stop and a detector configured to detect the scattered light that passes through the field stop. In addition, the metrology system includes a computer system configured to determine a characteristic of the grating target using output of the detector.

Abstract: A variable pressure probe pin device, including: a housing with a channel having a first longitudinal axis; a probe at least partially disposed in the channel and including a plurality of probe pins configured to measure a property of a conductive layer; and a fluid pressure system configured to supply pressurized fluid o the channel to control a position of the probe within the channel. The housing or the probe is displaceable such that the plurality of probe pins contact the conductive layer.

Abstract: A method and system to measure misalignment error between two overlying or interlaced periodic structures are proposed. The overlying or interlaced periodic structures are illuminated by incident radiation, and the diffracted radiation of the incident radiation by the overlying or interlaced periodic structures are detected to provide an output signal. The misalignment between the overlying or interlaced periodic structures may then be determined from the output signal.