Abstract: Methods and systems for inspection of wafers and reticles using designer intent data are provided. One computer-implemented method includes identifying nuisance defects on a wafer based on inspection data produced by inspection of a reticle, which is used to form a pattern on the wafer prior to inspection of the wafer. Another computer-implemented method includes detecting defects on a wafer by analyzing data generated by inspection of the water in combination with data representative of a reticle, which includes designations identifying different types of portions of the reticle. An additional computer-implemented method includes determining a property of a manufacturing process used to process a wafer based on defects that alter a characteristic of a device formed on the wafer. Further computer-implemented methods include altering or simulating one or more characteristics of a design of an integrated circuit based on data generated by inspection of a wafer.

Abstract: Methods and systems for inspection of wafers and reticles using designer intent data are provided. One computer-implemented method includes identifying nuisance defects on a wafer based on inspection data produced by inspection of a reticle, which is used to form a pattern on the wafer prior to inspection of the wafer. Another computer-implemented method includes detecting defects on a wafer by analyzing data generated by inspection of the wafer in combination with data representative of a reticle, which includes designations identifying different types of portions of the reticle. An additional computer-implemented method includes determining a property of a manufacturing process used to process a wafer based on defects that alter a characteristic of a device formed on the wafer. Further computer-implemented methods include altering or simulating one or more characteristics of a design of an integrated circuit based on data generated by inspection of a wafer.

Abstract: Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.

Abstract: Various computer-implemented methods are provided. One method includes determining errors across a field of a lens of a lithography system based on wafer measurements. In addition, the method includes separating the errors into correctable and non-correctable errors across the field. The errors may include dose errors, focus errors, or dose and focus errors. In another embodiment, the method may include determining correction terms for parameter(s) of the lithography system, which if applied to the parameter(s), the correctable errors would be eliminated resulting in approximately optimal imaging performance of the lithography system. Another method includes controlling one or more parameters of features within substantially an entire printed area on a product wafer using a limited number of wafer measurements performed on a test wafer. The wafer measurements may be performed on a first feature type, and the features that are controlled may include a second, different feature type.

Abstract: Systems and methods for inspection of a specimen are provided. One system includes an illumination subsystem configured to illuminate the specimen by scanning a spot across the specimen. The system also includes a non-imaging detection subsystem configured to generate output signals responsive to light specularly reflected from the spot scanned across the specimen. In addition, the system includes a processor configured to generate images of the specimen using the output signals and to detect defects on the specimen using the images. In one embodiment, the non-imaging detection subsystem includes an objective and a detector. An NA of the objective does not match a pixel size of the detector. In another embodiment, the non-imaging detection subsystem includes an objective having an NA of greater than about 0.05. The system may be configured for multi-spot illumination and multi-channel detection. Alternatively, the system may be configured for single spot illumination and multi-channel detection.

Abstract: Computer-implemented methods for performing one or more defect-related functions are provided. One method for identifying noise in inspection data includes identifying events detected in a number of sets of inspection data that is less than a predetermined number as noise. One method for binning defects includes binning the defects into groups based on defect characteristics and the sets of the inspection data in which the defects were detected. One method for selecting defects for defect analysis includes binning defects into group(s) based on proximity of the defects to each other and spatial signatures formed by the group(s). A different method for selecting defects for defect analysis includes selecting defects having the greatest diversity of defect characteristic(s) for defect analysis. One method includes classifying defects on a specimen using inspection data generated for the specimen combined with defect review data generated for the specimen.

Abstract: Methods and systems for inspection of wafers and reticles using designer intent data are provided. One computer-implemented method includes identifying nuisance defects on a wafer based on inspection data produced by inspection of a reticle, which is used to form a pattern on the wafer prior to inspection of the wafer. Another computer-implemented method includes detecting defects on a wafer by analyzing data generated by inspection of the wafer in combination with data representative of a reticle, which includes designations identifying different types of portions of the reticle. An additional computer-implemented method includes determining a property of a manufacturing process used to process a wafer based on defects that alter a characteristic of a device formed on the wafer. Further computer-implemented methods include altering or simulating one or more characteristics of a design of an integrated circuit based on data generated by inspection of a wafer.

Abstract: Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium.

Abstract: Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, a characteristic of a polishing pad, or a characteristic of a polishing tool are provided. One method includes scanning a specimen with a measurement device during polishing of a specimen to generate output signals at measurement spots on the specimen. The method also includes determining if the output signals are outside of a range of output signals. Output signals outside of the range may indicate that a parameter of the measurement device is out of control limits. In a different embodiment, output signals outside of the range may indicate damage to the specimen. Another method includes scanning a polishing pad with a measurement device to generate output signals at measurement spots on the polishing pad. The method also includes determining a characteristic of the polishing pad from the output signals.

Abstract: Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.

Abstract: Various methods, carrier media, and systems for monitoring a characteristic of a specimen are provided. One computer-implemented method for monitoring a characteristic of a specimen includes determining a property of individual pixels on the specimen using output generated by inspecting the specimen with an inspection system. The method also includes determining a characteristic of individual regions on the specimen using the properties of the individual pixels in the individual regions. The method further includes monitoring the characteristic of the specimen based on the characteristics of the individual regions.

Abstract: Systems and methods for inspecting a specimen are provided. One system includes an illumination subsystem configured to direct light to the specimen at an oblique angle of incidence. The light is polarized in a plane that is substantially parallel to the plane of incidence. The system also includes a detection subsystem configured to detect light scattered from the specimen. The detected light is polarized in a plane that is substantially parallel to the plane of scattering. In addition, the system includes a processor configured to detect defects on the specimen using signals generated by the detection subsystem. In one embodiment, such a system may be configured to detect defects having a size that is less than half of a wavelength of the light directed to the specimen.

Abstract: Various computer-implemented methods for classifying defects on a specimen are provided. One method includes assigning individual defects detected on the specimen to defect groups based on one or more characteristics of the individual defects. The method also includes displaying information about the defect groups to a user. In addition, the method includes allowing the user to assign a classification to each of the defect groups. Systems configured to classify defects on a specimen are also provided. One system includes program instructions executable on a processor for assigning individual defects detected on the specimen to defect groups based on one or more characteristics of the individual defects. The system also includes a user interface configured for displaying information about the defect groups to a user and allowing the user to assign a classification to each of the defect groups.

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness.

Abstract: Methods and systems for determining a characteristic of a wafer are provided. One method includes generating output responsive to light from the wafer using an inspection system. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The method also includes determining the characteristic of the wafer using the second output. One system includes an inspection subsystem configured to illuminate the wafer and to generate output responsive to light from the wafer. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The system also includes a processor configured to determine the characteristic of the wafer using the second output.

Abstract: Methods and systems for inspection of a specimen using different parameters are provided. One computer-implemented method includes determining optimal parameters for inspection based on selected defects. This method also includes setting parameters of an inspection system at the optimal parameters prior to inspection. Another method for inspecting a specimen includes illuminating the specimen with light having a wavelength below about 350 nm and with light having a wavelength above about 350 nm. The method also includes processing signals representative of light collected from the specimen to detect defects or process variations on the specimen. One system configured to inspect a specimen includes a first optical subsystem coupled to a broadband light source and a second optical subsystem coupled to a laser. The system also includes a third optical subsystem configured to couple light from the first and second optical subsystems to an objective, which focuses the light onto the specimen.

Abstract: Systems configured to generate output corresponding to defects on a specimen and systems configured to generate phase information about defects on a specimen are provided. One system includes an optical subsystem that is configured to create interference between a test beam and a reference beam. The test beam and the reference beam are reflected from the specimen. The system also includes a detector that is configured to generate output representative of the interference between the test and reference beams. The interference increases contrast between the output corresponding to the defects and output corresponding to non-defective portions of the specimen.

Abstract: Methods and systems for determining a characteristic of a wafer are provided. One method includes generating output responsive to light from the wafer using an inspection system. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The method also includes determining the characteristic of the wafer using the second output. One system includes an inspection subsystem configured to illuminate the wafer and to generate output responsive to light from the wafer. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The system also includes a processor configured to determine the characteristic of the wafer using the second output.

Abstract: Methods for identifying an edge of a care area for an array area formed on a wafer and/or for binning defects detected in the array area are provided. One method for identifying an edge of a care area for an array area formed on a wafer includes determining a value for a difference image as a function of position from a position known to be inside the array area to a position known to be outside of the array area. The method also includes identifying the position that is located closest to the inside of the array area and that has the value greater than a threshold as a position of the edge of the care area.

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including: but not limited to, critical dimension and overlay misregistration; defects and thin film characteristics; critical dimension and defects; critical dimension and thin film characteristics; critical dimension, thin film characteristics and defects; macro defects and micro defects; flatness, thin film characteristics and defects; overlay misregistration and flatness; an implant characteristic and defects; and adhesion and thickness.